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1995 Fiscal Year Final Research Report Summary

Study on fabrication on semiconducting diamond film by laser ablation

Research Project

Project/Area Number 06805030
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field Electronic materials/Electric materials
Research InstitutionOsaka University

Principal Investigator

MORI Yusuke  Osaka Univ., Electrical Eng., Res.Associate, 工学部, 助手 (90252618)

Project Period (FY) 1994 – 1995
Keywordssemiconducting diamond / AIN / n-type / pulsed laser ablation / nitrogen plasma / cathodoluminescence / oriented growth / N / Al ratio
Research Abstract

I have tried to fabricate n-type diamond by ion implantation and gas doping with phosphorous. The n-type doping, however, could not be succeeded in this work. So that I have aimed to develop wide gap nitrides, such as AIN because of their possibility of achieving n-type doping and case to grow. The wide gap pnjunction will be realized by the heterostructures between p-type diamond and n-type AIN.In this work, highly oriented AIN thin films have been grown on Si (100) substrates by using pulsed laser deposition from sintering AIN targets. The three different growth ambient, vacuum, nitrogen gas, and nitrogen plasma, have been used in order to investigate the effect of an ambient on the film quality. Rutherford backscattering analysis revealed that the N/Al ratios of the films grown in nitrogen plasma and nitrogen gas ambient were estimated to be 1.43 times and 1.37 times as large as that of the film grown in the high vacuum, respectively. This result revealed that the presence of nitrogen-contained ambient during the growth is effective to increase the nitrogen concentration in the AIN films and essential for the growth of high-quality AIN films. Cathodoluminescence study also implied the decrease of oxygen content in the film grown in nitrogen plasma ambient.

  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] Yusuke Mori: "The growth of AIN thin films on (100) and (111) Si by plasma-assisted pulsed laser deposition from Al-metal target" Jpn. J. Appl. Phys.(submitted).

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Yusuke Mori: "AIN thin films grown by pulsed laser deposition" Diamond Films & Technology. (in press).

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Yusuke Mori: "Growth and Characterization of CVD Diamond Films Doped with Phosphorous" Proc. 4th Int. Conf. New Diamond Sci. & Techn.701-704 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Yusuke Mori: "Electron affinity of single-crystalline CVD diamond studied by UV synchrotron radiation" Jpn. J. Appl. Phys.33. 6312-6315 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Yusuke Mori: "Photoyield measurements of CVD diamond" Diamond and Related Materials. 4. 806-808 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Yusuke Mori: "Highly Oriented AIN Thin Films Grown by Plasma-Assisted Pulsed Laser Deposition" Material Research Society. (in press).

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Ogawa, M.Okamoto, Y.K.Yap, Y.Mori, A.Hatta, T.Ito, T.Sakaki and H.Hiraki: "AIN thin films grown by pulsed laser deposition" Diamond Films & Technology. (in press).

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Ogawa, M.Okamoto, Y.Mori and T.Sakaki: "The growth of AIN thin films on (100) and (111) Si by plasmassisted pulsed laser deposition from Al-metal target" Jpn.J.Appl.Phys. (submitted.).

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Eimori, Y.Mori, A.Hatta, T.Ito and A.Hiraki: "Photoyield measurements of CVD diamond" Diamond and Related Materials. 4. 806-808 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Eimori, Y.Mori, A.Hatta, T.Ito and A.Hiraki: "Electron affinity of single-crystalline CVD diamond studied by UV synchrotron radiation" Jpn.J.Appl.Phys.33. 6312-6315 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Eimori, Y.Mori, A.Hatta, T.Ito and A.Hiraki: "The electron affinity of CVD diamond with surface modifications" Proc.1st Sym.Control of Semiconductor Interfaces. 149-154 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Bekku, Y.Mori, N.Eimori, H.Makita, A.Hatta, T.Ito, T.Hirao, T.Sasaki and A.Hiraki: "Growth and characterization of CVD diamond films doped with phosphorous" Proc.4th Int.Conf.New Diamond Sci.& Technol.701-704 (1994)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1997-03-04  

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