1997 Fiscal Year Final Research Report Summary
Quantum Semiconductor Electronics
| Project/Area Number |
07044120
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| Research Category |
Grant-in-Aid for international Scientific Research
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| Allocation Type | Single-year Grants |
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| Section | Joint Research |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | The University of Tokyo |
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Principal Investigator |
ARAKAWA Yasuhiko University of Tokyo, Center for collaborative, Professor, 国際・産学共同研究センター, 教授 (30134638)
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| Co-Investigator(Kenkyū-buntansha) |
HIRAKAWA Kazuhiko University of Tokyo, Institute of Industrial Science, Associate Professor, 生産技術研究所, 助教授 (10183097)
SASAKI Hiryoyuki University of Tokyo, Institute of Industrial Science, Professor, 生産技術研究所, 教授 (90013226)
MIURA Noboru University of Tokyo, Institute for Solid State Physics, Professor, 物性研究所, 教授 (70010949)
HAMAGUCHI Chihiro Osaka University, Faculty of Engineering, Professor, 工学部, 教授 (40029004)
ANDO Tsuneya University of Tokyo, Institute for Solid State Physics, Professor, 物性研究所, 教授 (90011725)
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| Project Period (FY) |
1995 – 1997
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| Keywords | Mesoscopic / Quantum Nano-Structures / Quantum Dot / Super lattice / Resonant Tunneling / Single electron / One-Dimensional Structures / Semiconductor |
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| Research Abstract |
(1) Nano-scale semiconductor structures are fabricated using selective crystal growth or electron beam lithography technique. The archived size is about 10 nm. Moreover, Semiconductor nano-crystals of InAs or Si whose size is less than 10 nm are successfully formed using self-organization mechanism in the initial stage of crystal growth.
(2) It is found for the first time that the coherence length of the edge states which is formed at the edges of the device under very strong magnetic field is much longer than normal states. The mechanisms for the break down of the quantized Hall effect in the large current region are also clarified. It is found that the resistance of the two-dimensional electron gas in the quantized Hall regime is very sensitive to far-infrared irradiation. This effect is possibly applied to the far-infrared detectors.
(3) New memory structures with InAs nano-crystals near the channel is developed. MOS memory with Si nano-crystals is also fabricated and room temperature operation of memory effects is demonstrated. Point contact MOSFETs acting as single electron transistors are successfully fabricated and single electron tunneling is observed at room temperature. Quantum effects in such small devices are also intensively investigated.
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