1997 Fiscal Year Annual Research Report

エピタクシャル成長のメカニズムとコヒーレント超簿膜の物性

Research Project

Project/Area Number	07044133
Research Institution	TOKYO INSTITUTE OF TECHNOLOGY
Principal Investigator	八木克道東京工業大学, 理学部, 教授 (90016072)
Co-Investigator(Kenkyū-buntansha)	HORN von Hoe ハノーバー大学, 固体物理研究所, 助手 HENZLER M. ハノーバー大学, 固体物理研究所, 教授長谷川修司東京大学大学院, 理学系研究科, 助教授 (00228446) 井野正三宇都宮大学, 工学部, 教授 (70005867) 谷城康眞東京工業大学, 理学部, 助手 (40143648)
Keywords	シリコン表面 / 相転移 / 吸着構造 / 高指数面 / SPA-LEED / REM / 表面電気伝導 / ファセット面
Research Abstract	この研究プログラムで今年度次のような成果が得られた。 1)Au吸着誘起Si表面の構造相転移を観察し、表面構造中のSi原子密度を測定すると同時にSi(111)微斜面においてファセト形式を見出した。 2)上記の発展として、[110]晶帯でのAu吸着誘起ファセット形成とその相転移、吸着量、熱処理温度依存性等を見出した。 3)Si(001)面でのAu吸着誘起ファセット形成過程を日独で共同してSPA-LEED、UHV-REMその構造と形成過程の詳細を明らかにした。 4)表面エレクトロマイグレーションによるステップバンチングの過程におけるAu吸着の効果を調べ、Au吸着がSiアドアトムの有効電荷を反転させることを明らかにした。 5)Si(111)√3x√3-Ag表面上に貴金属(Au、Ag、Cu)、アルカリ金属などを微量吸着させると共通して√21X√21が形成されることを見出した。 6)Si(111)√3x√3-Ag表面を5KでSTM観察すると定在波が半導体表面であるにも関わらず明瞭に観察された。 7)Si(111)表面にPbを吸着させて形成される不整合吸着構造は200Kで7X√3整合構造に相移転することを見出した。 8)Si(111)急冷表面のアドアトムは230℃でc2x8と"1x1"にGeと同様な相転移があることを見出した。 9)金属吸着Si表面にC60フラーレンヲ吸着させると超格子構造に依存してエピタクシー変化することが分かった。 10)SPA-LEEDの解析により種々の吸着系で多様な成長欠陥が形成されることを明瞭にかつ系統的に調べCaF2のエピタクシーの詳細もSTM、LEEDで明らかにした。 11)Si(111)Ag系で4Kでの伝導測定から2原子層以下の吸着量で金属-絶縁体相転移を見出した。

Research Products
(24 results)

All Other

All Publications (24 results)

[Publications] H.Minoda, S.Sakamoto and K.Yagi: "In-situ REM observation of surfactant-mediated epitaxy;growth of Ge on Si(111)surfaces mediated by Bi" Surf.Sci.372. 1-8 (1997)
[Publications] H.Minoda and K.Yagi: "REM stidies of surfactant-mediatedepitaxy" in Advances in the Understanding of Crystal Growth Mechanisms. 293-307 (1997)
[Publications] K.Yagi, K.Aoki, H.Tamura, Y.Tanisiro, H.Tamura and T.Suzuki: "REM studies of surface dynamics on Si surface" Proc.EMS. 579-580 (1997)
[Publications] T.Suzuki and K.Yagi: "REM study of the Si(111)vicinal surface" Surface Review and Letters. 3. 543-549 (1997)
[Publications] H.Tamura, Y.Tanisiro, H.Minoda and K.Yagi: "Competing effects of current and strain on step structures on Si(001)2×1 studied by REM" Surface Sci.382. 310-319 (1997)
[Publications] H.Minoda, K.Yagi, E.-J.M-zu Heringdorf, A.Meier, D.Kahler and M.Horn von Hoegen: "Gold-induced faceting on vicinal Si(001)surfaces:Part (SPA-LEED study)" Phys.Rev.Bsubmitted.
[Publications] H.Minoda, K.Yagi, M.Horn von Hoegen and E.-J.M-zu Heringdorf: "Gold-induced faceting on vicinal Si(001)surfaces:PartII(UHV REM study)" Phys.Rev.B.submitted.
[Publications] K.Aoki, T.Suzuki, H.Minoda, Y.Tanishiro and K.Yagi: "Au Adsorption Induced Faceting and Phase Transitions of Facet Planes on the Si[110]Zone Studied by UHV-REM" Surface Sci.(in press). (1998)
[Publications] K.Aoki, H.Minoda, Y.Tanisiro and K.Yagi: "REM Studies of Adsorption-Induced Phase Transitions and Faceting in the Si(111)-Au System" Surface Review and Letters. (in press). (1998)
[Publications] Y.Nakajima, S.Takeda, T.Nagano and S.Hasegawa: "Surface electrical conduction due to carrier doping into a surface-state band on Si(111)-√<3>×√<3>-Ag" Physical Review B. 56. 6782-6787 (1997)
[Publications] Z.H.Zhang, S.Hasegawa and S.Ino: "RHEED intensity oscillation during epitaxial growth of Ag on Si(111)surfaces at low temperature" Physical Review B. 55. 9983-9989 (1997)
[Publications] S.Hasegawa, X.Tong, C-S, Jiang, Y.Nakajima, T.Nagano: "Electrical conduction via Surface-state bonds" Surface Science. 386. 322-327 (1997)
[Publications] Y.Nakajima, C.Voges, T.Nagano, S.Hasegawa, G.Klos, H.Pfnitr: "Critical scattering at the order-disorder phase transition of Si(111)-√<3>×√<3>R30°-Au surface" Physical Review B. 55. 8129-8135 (1997)
[Publications] C.-S.Jiang, X.Tong, S.Hasegawa, and S.Ino: "Electrical conduction through the surface-state band of the Si(111)-√<21>×√<21>-(Ag+Au)structure" Surface Science. 376. 69-76 (1997)
[Publications] T.Okuda, H.Daimon, S.Suga, Y.Tezuka, S.Ino: "Surface electronic structure of ordered alkali and noble metal overlayers on Si(111)" Applied Surface Science. 121. 89-97 (1997)
[Publications] S.Hasegawa, C.-S.Jiang, X.Tong, Y.Nakajima: "Electrical functional properties of surface superstructures on semiconductors" Advances in Colloid Interface Science. 71/72. 125-145 (1997)
[Publications] X.Tong, C.-S.Jiang, and S.Hasegawa: "Electronic structure of the Si(111)-√<21>×√<21>-(Ag+Au)surface" Physical Review B. 57. (1998)
[Publications] M.Henzler: "Growth of epitaxial monolayers" Surf.Sci.357. 809-819 (1996)
[Publications] M.Henzler: "Capabilities of Defect Analysis with LEED" Surf.Reviews and Letters. 4. 489-500 (1997)
[Publications] B.M.ler, Th.Schmidt and M.Henzler: "Growth and melting of a Pbmonolayer on Cu(111)" Surf.Sci.376. 123-132 (1997)
[Publications] J.Wollschloger and A.Meier: "Film and Interface Morphology of CaF2 Grown Si(111)at Low Temperature" J.Appl.Phys.79. 7373-7375 (1996)
[Publications] H.Pietsch, A.Klust, A.Meier, and J.Wollschloger: "Growth Instabilities of CaF2 Adlayers Deposited at High Temperature on Si(111)" Surf.Sci.377-379, 909-913
[Publications] H.Minoda and K.Yagi: "Advances in the Understanding of Crystal Growth" Elsevier Science B.V., 15 (1997)
[Publications] 八木克道: "表面の構造(表面科学シリーズ(3))" 丸善, 80 (1998)

1997 Fiscal Year Annual Research Report

エピタクシャル成長のメカニズムとコヒーレント超簿膜の物性

Principal Investigator

八木 克道 東京工業大学, 理学部, 教授 (90016072)

Research Products

[Publications] H.Minoda, S.Sakamoto and K.Yagi: "In-situ REM observation of surfactant-mediated epitaxy;growth of Ge on Si(111)surfaces mediated by Bi" Surf.Sci.372. 1-8 (1997)

[Publications] H.Minoda and K.Yagi: "REM stidies of surfactant-mediatedepitaxy" in Advances in the Understanding of Crystal Growth Mechanisms. 293-307 (1997)

[Publications] K.Yagi, K.Aoki, H.Tamura, Y.Tanisiro, H.Tamura and T.Suzuki: "REM studies of surface dynamics on Si surface" Proc.EMS. 579-580 (1997)

[Publications] T.Suzuki and K.Yagi: "REM study of the Si(111)vicinal surface" Surface Review and Letters. 3. 543-549 (1997)

[Publications] H.Tamura, Y.Tanisiro, H.Minoda and K.Yagi: "Competing effects of current and strain on step structures on Si(001)2×1 studied by REM" Surface Sci.382. 310-319 (1997)

[Publications] H.Minoda, K.Yagi, E.-J.M-zu Heringdorf, A.Meier, D.Kahler and M.Horn von Hoegen: "Gold-induced faceting on vicinal Si(001)surfaces:Part (SPA-LEED study)" Phys.Rev.Bsubmitted.

[Publications] H.Minoda, K.Yagi, M.Horn von Hoegen and E.-J.M-zu Heringdorf: "Gold-induced faceting on vicinal Si(001)surfaces:PartII(UHV REM study)" Phys.Rev.B.submitted.

[Publications] K.Aoki, T.Suzuki, H.Minoda, Y.Tanishiro and K.Yagi: "Au Adsorption Induced Faceting and Phase Transitions of Facet Planes on the Si[110]Zone Studied by UHV-REM" Surface Sci.(in press). (1998)

[Publications] K.Aoki, H.Minoda, Y.Tanisiro and K.Yagi: "REM Studies of Adsorption-Induced Phase Transitions and Faceting in the Si(111)-Au System" Surface Review and Letters. (in press). (1998)

[Publications] Y.Nakajima, S.Takeda, T.Nagano and S.Hasegawa: "Surface electrical conduction due to carrier doping into a surface-state band on Si(111)-√<3>×√<3>-Ag" Physical Review B. 56. 6782-6787 (1997)

[Publications] Z.H.Zhang, S.Hasegawa and S.Ino: "RHEED intensity oscillation during epitaxial growth of Ag on Si(111)surfaces at low temperature" Physical Review B. 55. 9983-9989 (1997)

[Publications] S.Hasegawa, X.Tong, C-S, Jiang, Y.Nakajima, T.Nagano: "Electrical conduction via Surface-state bonds" Surface Science. 386. 322-327 (1997)

[Publications] Y.Nakajima, C.Voges, T.Nagano, S.Hasegawa, G.Klos, H.Pfnitr: "Critical scattering at the order-disorder phase transition of Si(111)-√<3>×√<3>R30°-Au surface" Physical Review B. 55. 8129-8135 (1997)

[Publications] C.-S.Jiang, X.Tong, S.Hasegawa, and S.Ino: "Electrical conduction through the surface-state band of the Si(111)-√<21>×√<21>-(Ag+Au)structure" Surface Science. 376. 69-76 (1997)

[Publications] T.Okuda, H.Daimon, S.Suga, Y.Tezuka, S.Ino: "Surface electronic structure of ordered alkali and noble metal overlayers on Si(111)" Applied Surface Science. 121. 89-97 (1997)

[Publications] S.Hasegawa, C.-S.Jiang, X.Tong, Y.Nakajima: "Electrical functional properties of surface superstructures on semiconductors" Advances in Colloid Interface Science. 71/72. 125-145 (1997)

[Publications] X.Tong, C.-S.Jiang, and S.Hasegawa: "Electronic structure of the Si(111)-√<21>×√<21>-(Ag+Au)surface" Physical Review B. 57. (1998)

[Publications] M.Henzler: "Growth of epitaxial monolayers" Surf.Sci.357. 809-819 (1996)

[Publications] M.Henzler: "Capabilities of Defect Analysis with LEED" Surf.Reviews and Letters. 4. 489-500 (1997)

[Publications] B.M.ler, Th.Schmidt and M.Henzler: "Growth and melting of a Pbmonolayer on Cu(111)" Surf.Sci.376. 123-132 (1997)

[Publications] J.Wollschloger and A.Meier: "Film and Interface Morphology of CaF2 Grown Si(111)at Low Temperature" J.Appl.Phys.79. 7373-7375 (1996)

[Publications] H.Pietsch, A.Klust, A.Meier, and J.Wollschloger: "Growth Instabilities of CaF2 Adlayers Deposited at High Temperature on Si(111)" Surf.Sci.377-379, 909-913

[Publications] H.Minoda and K.Yagi: "Advances in the Understanding of Crystal Growth" Elsevier Science B.V., 15 (1997)

[Publications] 八木 克道: "表面の構造(表面科学シリーズ(3))" 丸善, 80 (1998)

八木克道東京工業大学, 理学部, 教授 (90016072)

[Publications] 八木克道: "表面の構造(表面科学シリーズ(3))" 丸善, 80 (1998)