1997 Fiscal Year Annual Research Report

集積化知能システム極限材料・プロセス

Research Project

Project/Area Number	07248106
Research Institution	Toyo University
Principal Investigator	堀池靖浩東洋大学, 工学部, 教授 (20209274)
Co-Investigator(Kenkyū-buntansha)	安田幸夫名古屋大学, 工学部, 教授 (60126951) 冬木隆奈良先端科学技術大学院大学, 物質創成科学研究科, 教授 (10165459) 服部健雄武蔵工業大学, 工学部, 教授 (10061516) 鶴島稔夫九州大学, 工学部, 教授 (10236953) 白木靖寛東京大学, 先端科学技術研究センター, 教授 (00206286)
Keywords	Si高精度化プロセス / Si / Ge歪超格子 / 極薄酸化膜 / 低抵抗コンタクト / 高アスペクト比プロセス / ヘテロ界面 / 欠陥緩和 / 無損傷化
Research Abstract	(白木)SiGe/Siヘテロ構造での変調ド-ピングにおいて熱処理の効果を調べ、伝導機構を解明。高移動度の構造では遠方の不純物による散乱が効くが、熱処理により拡散が生じるとチャネル内不純物の効果が著しい。この結果から高性能FET実現の指針を得た。(服部)原子スケールで平坦なSi(100)上に形成した極薄Si酸化膜表面の凹凸がSi(100)面上の単原子ステップの高さ0.135nm以下と極めて小さいこと、層状の酸化反応を示唆する表面粗さの酸化の進行に伴う周期的変化、ダングリングボンドの存在が推測される位置でのSiO_2/Si(111)界面の構造等を見い出した。(鶴島)イオン照射による原子混合反応で室温〜100℃で形成される定比組成のCoSi相の成長が点欠陥の移動に伴う増速拡散律速であることを解明。また、FIB照射により0.1μmオーダの微細シリサイド構造を形成した。(冬木)酸素活性種を活用して300〜500℃の低温で極薄SiO_2膜を形成し、酸化速度の向上と精密制御、SiO_2/Si界面の原子層レベルでの平坦化を達成。膜と界面の電子物性を詳細に評価解析し、更にMOSFETゲート酸化膜に適用し、動作特性を評価。(堀池)HFE227は高エッチング率のCF_3^+イオンなどを生じ、レジストとの選択性の向上にTMSを添加し、0.15μm径アスペクト比15のコンタクト孔を形成。C_4F_8/ICP系で長時間使用により壁への重合膜に起因してCF_3ラジカル濃度の上昇が判明。(安田)CoSi_2(100)/Si(100)エピタキシャルコンタクト形成技術として予め膜厚0.8nmのCoSi_2極薄膜を形成する二段階成長法を開発。他の方法では膜厚1nm以上の平坦なCoSi_2エピ膜形成が困難だが、本法は20nmでに平坦なCoSi_2(100)膜が形成可能で、CoSi_2/Si系ソース・ドレイン電極への応用に見通しがついた。

Research Products

(31 results)

All Other

All Publications (31 results)

[Publications] A.Yutani, Y.Shiraki: "Hybrid MBE growth and mobility limiting factors of n-channel Si/SiGe modulation-doped systems" J.Cryst.Growth. 175/176. 504 (1997)
[Publications] E.S.Kim, N.Usami, H.Sunamura, Y.Shiraki,and S.Fukatsu: "Luminescence study on Ge islands a stressors on SiGe/Si quantum well" J.Cryst.Growth. 175/176. 519 (1997)
[Publications] N.Usami, Y.Shiraki and S.Fukatsu: "Spectorscopic study of Si-based quantum wells with neighboring confinement structure" Semicon.Sci.Technol.12. 1596 (1997)
[Publications] H.Sunamura, S.Fukatsu, N.Usami,and Y.Shiraki: "Anomalous photoluminescence of pure-Ge/Si type-II coupled quantum wells" Thin Solid Films. 294. 336 (1997)
[Publications] P.Reimer, J.H.Li, Y.Yamaguchi, O.Sakata, H.Hashizume, N.Usami and Y.Shiraki: "Interfacial roughness of SiGe/Si multilayer structures on Si(111) probed by x-ray scattering" J.Phys.Cond.Matt.9. 4521 (1997)
[Publications] D.K.Nayak, N.Usami, S.Fukatsu,and Y.Shiraki: "Study of the optical properties of SOI substrate" J.Appl.Phys.81. 3484 (1997)
[Publications] Y.Horiike, T.Shibayama, Y.Morikawa, T,Takayanagi, H.Oshio, H.Ita, T.Ichiki and H.Shindo: "Negative ions generated in downstream plasmas and their Si etching reactivity" Proc.11th Int.Colloquium Plasma Processes,Le Mans,France. 33-35 (1997)
[Publications] Takashi Fuyuki, Seishi Muranaka and Hiroyuki Matsunami: "Initial Stage of ultra-thin SiO_2 formation at low temperatures using activated oxygen" Appl.Surf.Sci.117/118. 123-126 (1997)
[Publications] 二山拓也、森泉和也、冬木隆、松波弘之: "酸素励起活性種を用いた高品質SiO_2膜の低温形成" 電子情報通信学会技術研究報告. SDM97. 171 (1998)
[Publications] T.Sadoh, K.Tsukamoto, A.Baba, D-J.Bai, A.Kenjo, T.Tsurushima, H.Mori,and H.Nakashima: "Deep Level of Iron-Hydrogen Complex in Silicon" J.Appl.Phys.82. 3828-3831 (1997)
[Publications] H.Nakashima, K.Furukawa, Y.C.Liu, D.W.Gao, Y.Kashiwazaki, K.Muraoka, K.Shibata,and T.Tsurushima: "Low-Temperature Deposition of High Quality Silicon Dioxide Films by Sputtering-type Electron Cyclotron Resonance Plasma" J.Vac.Sci.Technol.A. 15. 1951-1954 (1997)
[Publications] T.Sadoh, A.Matsushita, Y-Q.Zhang, D-J.Bai, A.Baba, A.Kenjo, T.Tsurushima, H.Mori,and H.Nakashima: "Deep State in Silicon on Sapphire by Transient-Current Spectroscopy" J.Appl.Phys.82. 5262-5264 (1997)
[Publications] J.Arai, N.Usami, K.Ota, Y.Shiraki, A.Ohga,and T.Hattori: "Precise control of the island formation using overgrowth technique on cleaved-edge of strained multiple quantum wells" Appl.Phys.Lett.70. 2981 (1997)
[Publications] J.Arai, A.Ohga, T.Hattori, N.Usami,and Y.Shiraki: "Optical investigation of growth mode of Ge thin films on Si(110)substrates" Appl.Phys.Lett.71. 785 (1998)
[Publications] S.Zaima and Y.Yasuda: "Transition-Metal/Silicon Interfaces(invited)" J.Vac.Sci.Technol.(in press). (1998)
[Publications] Y.Hayashi, Y.Matsuoka, T.Katoh, H.Ikegami, H.Ikeda, S.Zaima and Y.Yasuda: "A new growth method of epitaxial cobalt disilicide on Si(100)" Proc.of Advanced Metallization and Interconnect Systems for ULSI Applications in 1997. (in press). (1998)
[Publications] Y.Morikawa, K.Kubota, H.Ogawa, T.Ichiki, A.Tachibana, S.Fujimura and Y.Horiike: "Reaction of the fluorine atom and molecule with the hydrogen-terminated Si(111)surface" J.Vac.Sci.Technol.A. 16. 345-355 (1998)
[Publications] Y.Chinzei, M.Ogata, H.Shindo, T.Ichiki and Y.Horiike: "Residence time controlled high aspect ratio SiO _2etching" Digest of papers Int.Microprocesses and Nanotechnology Conf.184-185 (1997)
[Publications] A.Baba, H.Aramaki, T.Sadoh,and T.Tsurushima: "Growth Kinetics of CoSi formed by Ion Beam Irradiation at Room Temperature" J.Appl.Phys.82. 5480-5483 (1997)
[Publications] D.W.Gao, Y.Kashiwazaki, K.Muraoka, H.Nakashima, K.Furukawa, Y.C.Liu, K.Shibata,and T.Tsurushima: "Effect of Preoxidation on Deposition of Gate-quality Silicon Oxide Film at Low Temperature by using a Sputter-type ECR Plasma" J.Appl.Phys.82. 5680-5685 (1997)
[Publications] D.W.Gao, Y.Kashiwazaki, K.Muraoka, H.Nakashima, K.Furukawa, Y.C.Liu, and T.Tsurushima: "Deposition of High-Quality Silicon Oxynitride Film at Low Temperature by using a Sputter-Type ECR Plasma" Jpn.J.Appl.Phys.36. L1692-L1694 (1997)
[Publications] A.Omura, H.Sekikawa and T.Hattori: "Lateral size of atomically flat oxidized region on Si(111)surface" Appl.Surf.Sci.117/118. 127-130 (1997)
[Publications] H.Nohira and T.Hattori: "SiO_2 valence band near the SiO_2/Si(111)interface" Appl.Surf.Sci.117/118. 119-122 (1997)
[Publications] M.Ohashi and T.Hattori: "Deep State in Silicon on Sapphire by Transient-Current Spectroscopy" Jpn.J.Appl.Phys.36. L397-L399 (1997)
[Publications] T.Hattori, M.Fujimura, M.Ohashi and T.Yagi: "Periodic Changes in Surface Microroughness with Progress of Thermal Oxidation of Silicon" Appl.Surf.Sci.(in press). (1998)
[Publications] K.Hirose, T.Aizaki, H.Nohira and T.Hattori: "Initial Stage of SiO_2 Valence Band Formation" Appl.Surf.Sci.(in press). (1998)
[Publications] H.Nohira, A.Omura, M.Katayama and T.Hattori: "Valence Band Edge of Ultra-thin Silicon Oxide" Appl.Surf.Sci.(in press). (1998)
[Publications] T.Hattori: "Surface,interface and valence band of ultra-thin silicon oxides" Appl.Surf.Sci.(in press). (1998)
[Publications] 堀池靖浩、林俊雄: "「超微細加工技術」第7章「エッチング技術」" オーム社, (1997)
[Publications] N.Usami and Y.Shiraki: ""SiGe Quantum Structures" in Mesoscopic Physics and Electronics" Springer, (1998)
[Publications] T.Hattori: "Surface,interface and valence band of ultrathin silicon oxide in Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices,edited by E.Garfunkel,E.Gusev and A.Vul'" Kluwer Academic Publishers, 17 (1998)

1997 Fiscal Year Annual Research Report

集積化知能システム極限材料・プロセス

Principal Investigator

堀池 靖浩 東洋大学, 工学部, 教授 (20209274)

Research Products

[Publications] A.Yutani, Y.Shiraki: "Hybrid MBE growth and mobility limiting factors of n-channel Si/SiGe modulation-doped systems" J.Cryst.Growth. 175/176. 504 (1997)

[Publications] E.S.Kim, N.Usami, H.Sunamura, Y.Shiraki,and S.Fukatsu: "Luminescence study on Ge islands a stressors on SiGe/Si quantum well" J.Cryst.Growth. 175/176. 519 (1997)

[Publications] N.Usami, Y.Shiraki and S.Fukatsu: "Spectorscopic study of Si-based quantum wells with neighboring confinement structure" Semicon.Sci.Technol.12. 1596 (1997)

[Publications] H.Sunamura, S.Fukatsu, N.Usami,and Y.Shiraki: "Anomalous photoluminescence of pure-Ge/Si type-II coupled quantum wells" Thin Solid Films. 294. 336 (1997)

[Publications] P.Reimer, J.H.Li, Y.Yamaguchi, O.Sakata, H.Hashizume, N.Usami and Y.Shiraki: "Interfacial roughness of SiGe/Si multilayer structures on Si(111) probed by x-ray scattering" J.Phys.Cond.Matt.9. 4521 (1997)

[Publications] D.K.Nayak, N.Usami, S.Fukatsu,and Y.Shiraki: "Study of the optical properties of SOI substrate" J.Appl.Phys.81. 3484 (1997)

[Publications] Y.Horiike, T.Shibayama, Y.Morikawa, T,Takayanagi, H.Oshio, H.Ita, T.Ichiki and H.Shindo: "Negative ions generated in downstream plasmas and their Si etching reactivity" Proc.11th Int.Colloquium Plasma Processes,Le Mans,France. 33-35 (1997)

[Publications] Takashi Fuyuki, Seishi Muranaka and Hiroyuki Matsunami: "Initial Stage of ultra-thin SiO_2 formation at low temperatures using activated oxygen" Appl.Surf.Sci.117/118. 123-126 (1997)

[Publications] 二山 拓也、森泉 和也、冬木 隆、松波 弘之: "酸素励起活性種を用いた高品質SiO_2膜の低温形成" 電子情報通信学会技術研究報告. SDM97. 171 (1998)

[Publications] T.Sadoh, K.Tsukamoto, A.Baba, D-J.Bai, A.Kenjo, T.Tsurushima, H.Mori,and H.Nakashima: "Deep Level of Iron-Hydrogen Complex in Silicon" J.Appl.Phys.82. 3828-3831 (1997)

[Publications] H.Nakashima, K.Furukawa, Y.C.Liu, D.W.Gao, Y.Kashiwazaki, K.Muraoka, K.Shibata,and T.Tsurushima: "Low-Temperature Deposition of High Quality Silicon Dioxide Films by Sputtering-type Electron Cyclotron Resonance Plasma" J.Vac.Sci.Technol.A. 15. 1951-1954 (1997)

[Publications] T.Sadoh, A.Matsushita, Y-Q.Zhang, D-J.Bai, A.Baba, A.Kenjo, T.Tsurushima, H.Mori,and H.Nakashima: "Deep State in Silicon on Sapphire by Transient-Current Spectroscopy" J.Appl.Phys.82. 5262-5264 (1997)

[Publications] J.Arai, N.Usami, K.Ota, Y.Shiraki, A.Ohga,and T.Hattori: "Precise control of the island formation using overgrowth technique on cleaved-edge of strained multiple quantum wells" Appl.Phys.Lett.70. 2981 (1997)

[Publications] J.Arai, A.Ohga, T.Hattori, N.Usami,and Y.Shiraki: "Optical investigation of growth mode of Ge thin films on Si(110)substrates" Appl.Phys.Lett.71. 785 (1998)

[Publications] S.Zaima and Y.Yasuda: "Transition-Metal/Silicon Interfaces(invited)" J.Vac.Sci.Technol.(in press). (1998)

[Publications] Y.Hayashi, Y.Matsuoka, T.Katoh, H.Ikegami, H.Ikeda, S.Zaima and Y.Yasuda: "A new growth method of epitaxial cobalt disilicide on Si(100)" Proc.of Advanced Metallization and Interconnect Systems for ULSI Applications in 1997. (in press). (1998)

[Publications] Y.Morikawa, K.Kubota, H.Ogawa, T.Ichiki, A.Tachibana, S.Fujimura and Y.Horiike: "Reaction of the fluorine atom and molecule with the hydrogen-terminated Si(111)surface" J.Vac.Sci.Technol.A. 16. 345-355 (1998)

[Publications] Y.Chinzei, M.Ogata, H.Shindo, T.Ichiki and Y.Horiike: "Residence time controlled high aspect ratio SiO _2etching" Digest of papers Int.Microprocesses and Nanotechnology Conf.184-185 (1997)

[Publications] A.Baba, H.Aramaki, T.Sadoh,and T.Tsurushima: "Growth Kinetics of CoSi formed by Ion Beam Irradiation at Room Temperature" J.Appl.Phys.82. 5480-5483 (1997)

[Publications] D.W.Gao, Y.Kashiwazaki, K.Muraoka, H.Nakashima, K.Furukawa, Y.C.Liu, K.Shibata,and T.Tsurushima: "Effect of Preoxidation on Deposition of Gate-quality Silicon Oxide Film at Low Temperature by using a Sputter-type ECR Plasma" J.Appl.Phys.82. 5680-5685 (1997)

[Publications] D.W.Gao, Y.Kashiwazaki, K.Muraoka, H.Nakashima, K.Furukawa, Y.C.Liu, and T.Tsurushima: "Deposition of High-Quality Silicon Oxynitride Film at Low Temperature by using a Sputter-Type ECR Plasma" Jpn.J.Appl.Phys.36. L1692-L1694 (1997)

[Publications] A.Omura, H.Sekikawa and T.Hattori: "Lateral size of atomically flat oxidized region on Si(111)surface" Appl.Surf.Sci.117/118. 127-130 (1997)

[Publications] H.Nohira and T.Hattori: "SiO_2 valence band near the SiO_2/Si(111)interface" Appl.Surf.Sci.117/118. 119-122 (1997)

[Publications] M.Ohashi and T.Hattori: "Deep State in Silicon on Sapphire by Transient-Current Spectroscopy" Jpn.J.Appl.Phys.36. L397-L399 (1997)

[Publications] T.Hattori, M.Fujimura, M.Ohashi and T.Yagi: "Periodic Changes in Surface Microroughness with Progress of Thermal Oxidation of Silicon" Appl.Surf.Sci.(in press). (1998)

[Publications] K.Hirose, T.Aizaki, H.Nohira and T.Hattori: "Initial Stage of SiO_2 Valence Band Formation" Appl.Surf.Sci.(in press). (1998)

[Publications] H.Nohira, A.Omura, M.Katayama and T.Hattori: "Valence Band Edge of Ultra-thin Silicon Oxide" Appl.Surf.Sci.(in press). (1998)

[Publications] T.Hattori: "Surface,interface and valence band of ultra-thin silicon oxides" Appl.Surf.Sci.(in press). (1998)

[Publications] 堀池靖浩、林俊雄: "「超微細加工技術」第7章「エッチング技術」" オーム社, (1997)

[Publications] N.Usami and Y.Shiraki: ""SiGe Quantum Structures" in Mesoscopic Physics and Electronics" Springer, (1998)

[Publications] T.Hattori: "Surface,interface and valence band of ultrathin silicon oxide in Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices,edited by E.Garfunkel,E.Gusev and A.Vul'" Kluwer Academic Publishers, 17 (1998)

堀池靖浩東洋大学, 工学部, 教授 (20209274)

[Publications] 二山拓也、森泉和也、冬木隆、松波弘之: "酸素励起活性種を用いた高品質SiO_2膜の低温形成" 電子情報通信学会技術研究報告. SDM97. 171 (1998)