1998 Fiscal Year Annual Research Report

集積化知能システム極限材料・プロセス

Research Project

Project/Area Number	07248106
Research Category	Grant-in-Aid for Scientific Research on Priority Areas (A)
Research Institution	The University of Tokyo
Principal Investigator	堀池靖浩東京大学, 大学院・工学系研究科, 教授 (20209274)
Co-Investigator(Kenkyū-buntansha)	冬木隆奈良先端科学技術大学院大学, 創成科学研究科, 教授 (10165459) 安田幸夫名古屋大学, 工学部, 教授 (60126951) 服部健雄武蔵工業大学, 工学部, 教授 (10061516) 鶴島稔夫九州大学, 大学院・システム情報科学研究科, 教授 (10236953) 白木靖寛東京大学, 先端科学技術研究センター, 教授 (00206286)
Keywords	Si高精度化プロセス / Si / Ge歪超格子 / 極薄酸化膜 / 低抵抗コンタクト / 高アスペクト比プロセス / 強誘電体 / Siプロセス量子化学研究 / 欠損測定
Research Abstract	【白木】Si/Ge構造で、P型においても室温で1800を超える移動度を達成。CMOSタイプの高速Siヘテロデバイス開発の見通しを得た。【市村】SOI基板の拡がり抵抗測定に対し、空間電荷を考慮した理論解析手法を開発し、SOI中ではP、Bの拡散がバルクに比べ遅いことを明確化。【服部】Si(100)面の酸化に伴い、表面粗さが減少すると界面準位密度は減少し、表面粗さが酸化膜の残留応力を反映することが判明。【冬木】酸素活性種より300〜500℃で界面が原子レベルで平坦な極薄SiO_2膜を形成。界面電子物性を評価し、FET特性との関連を明確化。【鶴島】ECRプラズマによる2〜10nmの酸化膜を室温〜400℃で形成し、高品質化への低速イオン照射効果の役割を明確化。【谷川】Si中の熱平衡欠陥濃度と徐冷後の酸素関連欠陥に対して、適量の酸素含有の場合、空孔が抑制され、その領域の上下では酸化物様が形成され、低酸素濃度では空孔が増加することが判明。【堀池】超高アスペクト比孔形成機構、及びC_4F_8プラズマと高温内壁との相互作用を明確化。【安田】超低接触抵抗用のTi/SiGe系では、C49からC54への相転移反応の低温化、障壁高さと接触抵抗率の低下が起こり、高濃度B添加SiGeのエピ膜は、固相反応によりC54相の配向性の増大を明確化。【田畑】カルコゲナイド系強誘電体をSi素子上へ薄膜形成し、メモリ特性を確認。有機物/無機強誘電体構造を構築し、光メモリ性を確認。【平本】不純物の統計的揺らぎは微細化と共にその数より位置が大きくなる。しきい値動的制御デバイスでは、基板バイアスによる高駆動力構造を提案。【宮本】高速量子分子動力学プログラムの開発によりSiプラズマ酸化の初期過程を解明。更に、注目する系の原子レベルでの挙動や特性を可視化するツールを開発。【立花】酸素原子Si表面酸化、ClF_3洗浄TiN上のAl選択CVD、有機Ti-NH_3系のTiN-CVD、アルコキシオレフィン錯体による銅CVD等、及び水素終端Si表面のF原子エッチング等の反応機構に関する量子化学的研究を行った。

Research Products
(32 results)

All Other

All Publications (32 results)

[Publications] E.S.Kim,et al.: "Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties" Appl.Phys.Lett.72. 1617-1619 (1998)
[Publications] N.Usami,et al.: "Photoluminescence from pure-Ge/pure-Si neighboring confinement structure" J.Vac.Sci.Technol.B. 16. 1710-1712 (1998)
[Publications] H.Yaguchi,et al.: "Characterization of SiGe strained heterostructures grown by molecular beam epitaxy using a Si effusion cell" Thin Solid Films. 321. 241-244 (1998)
[Publications] H.Uchida,et al.: "Effect of Oxidation Ambient on Phosphorus Diffusion in SOI" Proc.Int.Workshop on Computational Electronics(IWCE-6). (印刷中). (1998)
[Publications] T.Hattori,et al.: "Periodic changes in surface microroughness with progress of thermal oxidation of silicon" Appl.Surf.Sci.123/124. 87-90 (1998)
[Publications] H.Nohira,et al.: "Valence band edge of ultra-thin silicon oxide near the interface" Appl.Surf.Sci.123/124. 546-549 (1998)
[Publications] K.Hirose,et al.: "Structural transition layer at SiO_2/Si interfaces" Phys.Rev.B5・8. 5617-5621 (1999)
[Publications] T.Fuyuki,et al.: "MOSFETs with nm-Thick Gate SiO_2 Grown at LOW Temperatures Utilizing Activated Oxygen" Proc.Intn'l Conf.Solid State Devices and Materials,Hiroshima. (1998)
[Publications] 森泉和也,他: "ECRリモートプラズマ法を用いた極薄SiO_2膜の低温形成" 電子情報通信学会技術研究報告 SDM98. 175. 53-58 (1998)
[Publications] Y-Q.Zhang,et al.: "Annealing Effects on Transition Region at Si-SiO_2 Interface" Res.Rep.on Inform.Sci.and Elec.Eng.of Kyushu Univ.3. 111-116 (1998)
[Publications] A.Matsushita,et al.: "Thin CoSi_2 Formation on SiO_2 with LOW-Energy Ion Irradiation" Jpn.J.Appl.Phys.37・2. 6117-6122 (1998)
[Publications] T.Ohshima,et al.: "Characterization of vacancy-type defects and phosphor donors induced in 6H-SiC by ion implatation" Appl.Phys.A67. 407-412 (1998)
[Publications] A.Uedono,et al.: "Investigation of vacancy-type defects in P-implanted 6H-SiC using monoenergetic positron beams" Jpn.J.Appl.Phys.37. 2422-2429 (1998)
[Publications] A.Uedono,et al.: "Defects in ion implanted HgCdTe probed by monoenergetic positron beams" Jpn.J.Appl.Phys.37. 3910-3914 (1998)
[Publications] Y.Chinzei,et al.: "Flow rate rule for high aspect ratio SiO_2 hole etching" J.Vac.Sci.& Technol.A. 16(3). 1519-1524 (1998)
[Publications] Y.Chinzei,et al.: "Residence time effects on SiO_2/Si selective etching employing high density fluorocarbon plasma" J.Vac.Sci.& Technol.B. 16(2). 1043-1050 (1998)
[Publications] S.Zaima,et al.: "Study of reaction and electrical properties at Ti/SiGe/Si(100) contacts for ultralarge scale integrated applications" J.Vac.Sci.Technol.B. 16. 2623-2628 (1998)
[Publications] Y.Hayashi,et al.: "A new growth method of epitaxial cobalt disilicide on Si(100)" Mat.Res.Soc.Symp.Proc.663-668 (1998)
[Publications] H.Tabata,et al.: "Di/Ferroelectric Properties of Bithmus Base Layered Ferroelectric Films for Application on Nonvolatile Memories" IEICE TRANS.ELECTRONICS. E81-C. 566-571 (1998)
[Publications] K.Ueda,et al.: "Ferromagnetism in LaFeO_3-LaCrO_3 Superlattices" Science. 280. 1064-1066 (1998)
[Publications] H.Tabata,et al.: "Construction of Ferroelectric and / or Ferromagnetic Superlattices by Laser MBE and Their Physical Properties" Mat.Sci.& Eng.B56. 140-146 (1998)
[Publications] M.Takamiya,et al.: "High Performance Electrically Induced Body Dynamic Threshold SOI MOSFET(EIB-DTMOS) with Large Body Effect and Low Threshold Voltage" IEEE International Electron Devices Meeting San Francisco,USA. 423-426 (1998)
[Publications] M.Takamiya,et al.: "High Performance Accumulated Back-Interface Dynamic Threshold SOI MOSFETs(AB-DTMOS) with Large Body Effect and Low Supply Voltage" Japanese Journal of Applied Physics. 38. (1999)
[Publications] T.N.Duyet,et al.: "Suppression of Geometric Component of Charge Pumping Current in Thin Film SOI MOSFET" Japanese Journal of Applied Physics,Part2. 37. L855-L858 (1998)
[Publications] K.Teraishi,et al.: "Quantum Chemical Study on the Oxidation Process of a Hydrogen Terminated Si Surface" J.Chem.Phys.109. 1495-1504 (1998)
[Publications] A.Yamada,et al.: "Tight-binding Molecular Dynamics Simulation of Desorbed SiO Molecule during the Oxidation of Si(111)Surface" Jpn.J.Appl.Phys.,in press.
[Publications] K.Teraishi,et al.: "Use of Umbrella Sampling in the Calculation of the Potential of Mean Force for Silicon Surface Oxidation" Surf.Sci.,in press.
[Publications] 久保百司,他: "計算化学によるコンビナトリアル薄膜成長の設計" 現代化学. 11. 51-55 (1998)
[Publications] 高見誠一,他: "計算化学によるデバイス材料の設計・製作支援" 応用物理. (印刷中).
[Publications] A.Tachibana,et al.: "Quantum Chemical Study of Al Selective CVD: Control Reactivity by Surface Termination" Advanced Metalization and Interconnect Systems for ULSI Applications in 1997. 263-269 (1998)
[Publications] A.Tachibana,et al.: "Quantum Chemical Study on the Oxidation of Hydrogen-Terminated Silicon Surface by Oxygen Anions" Jpn J.Appl.Phys.37. 4493-4505 (1998)
[Publications] K.Sakata,et al.: "Quantum Chemical Study of the Oxidation Sites in Hydrogen-and Water-Terminated Si Dimers: Attempt to Understand the Si-Si Back-Bond Oxidation on the Si Surface" Jpn J.Appl.Phys.37. 4962-4973 (1998)

1998 Fiscal Year Annual Research Report

集積化知能システム極限材料・プロセス

Principal Investigator

堀池 靖浩 東京大学, 大学院・工学系研究科, 教授 (20209274)

Research Products

[Publications] E.S.Kim,et al.: "Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties" Appl.Phys.Lett.72. 1617-1619 (1998)

[Publications] N.Usami,et al.: "Photoluminescence from pure-Ge/pure-Si neighboring confinement structure" J.Vac.Sci.Technol.B. 16. 1710-1712 (1998)

[Publications] H.Yaguchi,et al.: "Characterization of SiGe strained heterostructures grown by molecular beam epitaxy using a Si effusion cell" Thin Solid Films. 321. 241-244 (1998)

[Publications] H.Uchida,et al.: "Effect of Oxidation Ambient on Phosphorus Diffusion in SOI" Proc.Int.Workshop on Computational Electronics(IWCE-6). (印刷中). (1998)

[Publications] T.Hattori,et al.: "Periodic changes in surface microroughness with progress of thermal oxidation of silicon" Appl.Surf.Sci.123/124. 87-90 (1998)

[Publications] H.Nohira,et al.: "Valence band edge of ultra-thin silicon oxide near the interface" Appl.Surf.Sci.123/124. 546-549 (1998)

[Publications] K.Hirose,et al.: "Structural transition layer at SiO_2/Si interfaces" Phys.Rev.B5・8. 5617-5621 (1999)

[Publications] T.Fuyuki,et al.: "MOSFETs with nm-Thick Gate SiO_2 Grown at LOW Temperatures Utilizing Activated Oxygen" Proc.Intn'l Conf.Solid State Devices and Materials,Hiroshima. (1998)

[Publications] 森泉和也,他: "ECRリモートプラズマ法を用いた極薄SiO_2膜の低温形成" 電子情報通信学会技術研究報告 SDM98. 175. 53-58 (1998)

[Publications] Y-Q.Zhang,et al.: "Annealing Effects on Transition Region at Si-SiO_2 Interface" Res.Rep.on Inform.Sci.and Elec.Eng.of Kyushu Univ.3. 111-116 (1998)

[Publications] A.Matsushita,et al.: "Thin CoSi_2 Formation on SiO_2 with LOW-Energy Ion Irradiation" Jpn.J.Appl.Phys.37・2. 6117-6122 (1998)

[Publications] T.Ohshima,et al.: "Characterization of vacancy-type defects and phosphor donors induced in 6H-SiC by ion implatation" Appl.Phys.A67. 407-412 (1998)

[Publications] A.Uedono,et al.: "Investigation of vacancy-type defects in P-implanted 6H-SiC using monoenergetic positron beams" Jpn.J.Appl.Phys.37. 2422-2429 (1998)

[Publications] A.Uedono,et al.: "Defects in ion implanted HgCdTe probed by monoenergetic positron beams" Jpn.J.Appl.Phys.37. 3910-3914 (1998)

[Publications] Y.Chinzei,et al.: "Flow rate rule for high aspect ratio SiO_2 hole etching" J.Vac.Sci.& Technol.A. 16(3). 1519-1524 (1998)

[Publications] Y.Chinzei,et al.: "Residence time effects on SiO_2/Si selective etching employing high density fluorocarbon plasma" J.Vac.Sci.& Technol.B. 16(2). 1043-1050 (1998)

[Publications] S.Zaima,et al.: "Study of reaction and electrical properties at Ti/SiGe/Si(100) contacts for ultralarge scale integrated applications" J.Vac.Sci.Technol.B. 16. 2623-2628 (1998)

[Publications] Y.Hayashi,et al.: "A new growth method of epitaxial cobalt disilicide on Si(100)" Mat.Res.Soc.Symp.Proc.663-668 (1998)

[Publications] H.Tabata,et al.: "Di/Ferroelectric Properties of Bithmus Base Layered Ferroelectric Films for Application on Nonvolatile Memories" IEICE TRANS.ELECTRONICS. E81-C. 566-571 (1998)

[Publications] K.Ueda,et al.: "Ferromagnetism in LaFeO_3-LaCrO_3 Superlattices" Science. 280. 1064-1066 (1998)

[Publications] H.Tabata,et al.: "Construction of Ferroelectric and / or Ferromagnetic Superlattices by Laser MBE and Their Physical Properties" Mat.Sci.& Eng.B56. 140-146 (1998)

[Publications] M.Takamiya,et al.: "High Performance Electrically Induced Body Dynamic Threshold SOI MOSFET(EIB-DTMOS) with Large Body Effect and Low Threshold Voltage" IEEE International Electron Devices Meeting San Francisco,USA. 423-426 (1998)

[Publications] M.Takamiya,et al.: "High Performance Accumulated Back-Interface Dynamic Threshold SOI MOSFETs(AB-DTMOS) with Large Body Effect and Low Supply Voltage" Japanese Journal of Applied Physics. 38. (1999)

[Publications] T.N.Duyet,et al.: "Suppression of Geometric Component of Charge Pumping Current in Thin Film SOI MOSFET" Japanese Journal of Applied Physics,Part2. 37. L855-L858 (1998)

[Publications] K.Teraishi,et al.: "Quantum Chemical Study on the Oxidation Process of a Hydrogen Terminated Si Surface" J.Chem.Phys.109. 1495-1504 (1998)

[Publications] A.Yamada,et al.: "Tight-binding Molecular Dynamics Simulation of Desorbed SiO Molecule during the Oxidation of Si(111)Surface" Jpn.J.Appl.Phys.,in press.

[Publications] K.Teraishi,et al.: "Use of Umbrella Sampling in the Calculation of the Potential of Mean Force for Silicon Surface Oxidation" Surf.Sci.,in press.

[Publications] 久保百司,他: "計算化学によるコンビナトリアル薄膜成長の設計" 現代化学. 11. 51-55 (1998)

[Publications] 高見誠一,他: "計算化学によるデバイス材料の設計・製作支援" 応用物理. (印刷中).

[Publications] A.Tachibana,et al.: "Quantum Chemical Study of Al Selective CVD: Control Reactivity by Surface Termination" Advanced Metalization and Interconnect Systems for ULSI Applications in 1997. 263-269 (1998)

[Publications] A.Tachibana,et al.: "Quantum Chemical Study on the Oxidation of Hydrogen-Terminated Silicon Surface by Oxygen Anions" Jpn J.Appl.Phys.37. 4493-4505 (1998)

[Publications] K.Sakata,et al.: "Quantum Chemical Study of the Oxidation Sites in Hydrogen-and Water-Terminated Si Dimers: Attempt to Understand the Si-Si Back-Bond Oxidation on the Si Surface" Jpn J.Appl.Phys.37. 4962-4973 (1998)

堀池靖浩東京大学, 大学院・工学系研究科, 教授 (20209274)