1996 Fiscal Year Final Research Report Summary
Widening of the joined interface by the procedure without heating and pressing
Project/Area Number |
07305058
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Research Category |
Grant-in-Aid for Scientific Research (A)
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Allocation Type | Single-year Grants |
Section | 総合 |
Research Field |
Material processing/treatments
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Research Institution | Tokyo Institute of Technology |
Principal Investigator |
ONZAWA Tadao Tokyo Institute of Technology, Eng., Prof., 工学部, 教授 (10016438)
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Co-Investigator(Kenkyū-buntansha) |
SEKINE Testu JEOL.SA group, R.R., SAグループ(研究職), 課長
TAKAHASHI Yasuo Osaka university, JWRI,A.Prof., 接合工学研究所, 助教授 (80144434)
SUGA Tadatomo Tokyo university, RCAST,Prof., 先端科学技術研究センター, 教授 (40175401)
SHIMIZU Ryuichi Osaka university, Eng.Prof., 工学部, 教授 (40029046)
TAKAHASHI Kunio Tokyo Institute of Technology, Eng.R.A., 工学部, 助手 (70226827)
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Project Period (FY) |
1995 – 1996
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Keywords | adhesion / atomic force microscope / ultra high vacuum / molecular dynamics / chemical bond / interface / electronic spectroscopy / surface analysis |
Research Abstract |
A manipulating system is newly introduced to our adhesion force measurement system constructed in ultra high vacuum chamber of an Auger electron microscope. It has a heating system and an additive tilt freedom. The reconstruction of surface structure, the smoothing of the surface and the in-situ observation of the surface by secondary electron microscope during the adhesion force measurements. Results are compared with our theory which is deduced assuming the elastic continuum. The effects of the ion sputtering on the adhesion force and the governing mechanism of the adhesional contact are examined and discussed by using the theory. Criterion of surface roughness for perfect contact is deduced by K.Takahashi. The results qualitatively agree with the experimental results by T.Suga. The quantitative investigation is expected. The enhancing effects of interfacial diffusion during the joining is theoretically and experimentally discussed by Y.Takahashi. Damaging by ion sputtering is discussed by R.Shimizu. It is suggested that the effect of ion sputtering is mainly due to enhancement of the surface deformation rather than surface energy change. The limit of surface analysis is discussed by T.Sekine. Controlling of the surface roughness is investigated by K.Seimiya.
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