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1996 Fiscal Year Final Research Report Summary

A research on characterization of GaN-related compounds and blue lasers

Research Project

Project/Area Number 07455009
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionThe University of Tokushima

Principal Investigator

SAKAI Shiro  The University of Tokushima, Faculty of Engineering Professor, 工学部, 教授 (20135411)

Project Period (FY) 1995 – 1996
KeywordsGaN / InGaN / Bulk GaN / Homoepitaxy / Sublimation / GaPN / Semiconductor lasers
Research Abstract

Although a blue-to UV nitride lasers were realized, many unknown problems such as the effects of very high density of dislocation, problems associated with cladding layrs and p-type layrs were still remain unsolved. The purpose of this research is to solve these problems and to establish a basis for homoepitaxial lasers utilizing III-nitrides. For these purposes, the following research topics were performed.
1.Growth and characterization of GaPN alloy : An alloy of GaPN with bandgap energy in the range of 2.5-3 eV were obtained for the first time. A blue emission was obtained, but the composition control was found to depend strongly on the growth condition.
2.Growth of thick GaN and bulk GaN by sublimation method : A GaN with a thickness of several tens of mum to several hundred of mum on sapphire and a bulk GaN with the size of several hundreds of mum to several mm were obtained. A technique to grow bulk GaN in the selective area on the substrate was developed, and the devices processing of the bulk GaN became possible.
3.Growth of InGaN on sapphire : GaN and InGaN films were grown on sapphire by MOCVD,and the layrs were characterized. Especially, the formation mechanism of the inhomogeneity in InGaN was investigated in detail.
4.Homoepitaxial growth : GaN and GaN/InGaN double-heterostructure were grown on bulk GaN by MOCVD and the grown layrs were characterized. It was found that the growth mode on the bulk substrate was very different of that on the sapphire substrate.
Above research results provided the basis for fabricating nitride lasers on a bulk GaN substrate.

  • Research Products

    (24 results)

All Other

All Publications (24 results)

  • [Publications] S.Nakajima,T.Yang and S.Sakai: "Valence-Band-Edge Energy of Group-III,Nitride Alloy Semiconductors" Jpn.J.Appl.Phys.34-No.5. 2213-2215 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Yang.S.Nakajima and S.Sakai: "Electronic Structures of Wurtzite GaN,InN and their Alloy Ga_<l-x>ln_xN Calculated by the Tight-Binding Method" Jpn.J.Appl.Phys.34-NO.11. 5912-5921 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Nakajima,T.Yang and S.Sakai: "Electronic Structure of Ga_<l-x>ln_xN by the Tight-Binding Method with Nearest-Neighbor s,p and d and Second-Neighbor s and p Interactions" International Conference on Silicon Carbide and Rerated Materials : 1995,Institute of Physics Conference Series Number 142. 947-950 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Kurai,Y.Naoi,T.Abe,S.Ohmi and S.Sakai: "Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method" Jpn.J.Appl.Phys.35-No.1B. L77-79 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Kurai,T.Abe,Y.Naoi and S.Sakai: "Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by MOCVD" Jpn.J.Appl.Phys.35-No.3. 1637-1640 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Okada,S.Kurai,Y.Naoi,K.Nishino,F.Inoko and S.Sakai: "Tarnsmission Elictron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film" Jpn.J.Appl.Phys. 35-No.11B. 1318-1320 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Sato,Y.Naoi and S.Sakai: "Structural Analysis of GaN and GaN/InGaN/GaN DH Structures on Sapphire(0001)Substrate grown by MOCVD" Proceeding of MRS Symp.,1996. (in press). (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Sakai,S.Kurai,K.Nishino.K.Wada,H.Sato and Y.Naoi: "Growth of GaN by Sublimation Technique and Homoepitaxial growth by MOCVD" Proceeding of MRS Symp.,1996. (in press). (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Sato,M.R.Sarkar,Y.Naoi and S.Sakai: "XPS Measurement of Valence Band Discontinuity at GaP/GaN Heterointerfaces" Solid State Electronics. (in press). (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Naoi,Y.Naoi and S.Sakai: "MOCVD Growth of InAsN for Infrared Applications" Solid State Electronics. (in press). (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Kurai,K.Nishino and S.Sakai: "Nucleation Control in the Growth of Bulk Gan by Sublimation method" Jpn.J.Appl.Phys. (in press). (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Sato,Y.Naoi and S.Sakai: "X-ray Diffraction Analysis of GaN and GaN/InGaN/GaN Double-Hetero Structures Grown on Sapphire Substrate by MOCVD" Jpn.J.Appl.Phys.(in press). (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Nakajima, T.Yang and S.Sakai: "Valence-Band-Edge Energy of Group-III,Nitride Alloy Semiconductors" Jpn.J.Appl.Phys.Vol.34, No.5. 2213-2215 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Yang, S.Nakajima and S.Sakai: "Electronic Structures of Wurtzite GaN,InN and their Alloy Ga_<1-X>In_XN Calculated by the Tight-Binding Method" Jpn.J.Appl.Phys.Vol.34, No.11. 5912-5921 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Nakajima, T.Yang and S.Sakai: "Electronic Structures of Ga_<1-X>In_XN by the Tight-Binding Method with Nearest-Neighbor s, p and d and Second-Neighbor s and p Interactions" International Conference on Silicon Carbide and Rerated Materials-1995, Institute of Physics Conference Series. No.142. 947-950

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Kurai, Y.Naoi, T.Abe, S.Ohmi and S.Sakai: "Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method" Jpn.J.Appl.Phys.Vol.35, No.1B. L77-79 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Kurai, T.Abe, Y.Naoi and S.Sakai: "Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by MOCVD" Jpn.J.Appl.Phys.Vol.35, No.3. 1637-1640 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Okada, S.Kurai, Y.Naoi, K.Nishino, F.Inoko and S.Sakai: "Tarnsmission Electron Microscopy of Sublimation-Grown GaN Single Crystal and GaN Homoepitaxial Film" Jpn.J.Appl.Phys.Vol.35, No.10B. 1318-1320 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Sato, Y.Naoi and S.Sakai: "Structural Analysis of GaN and GaN/InGaN/GaN DH Structures on Sapphire (0001) Substrate Grown by MOCVD" Proceeding of MRS Symp.(in press). (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Sakai, S.Kurai, K.Nishino, K.Wada, H.Sato and Y.Naoi: "Growth of GaN by sublimation Technique and Homoepitaxial growth by MOCVD" Proceeding of MRS Symp.(in press). (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Sato, M.R.Sarkar, Y.Naoi and S.Sakai: "XPS Measurement of Valence Band Discontinuity at GaP/GaN Heterointerfaces" Solid State Electronics. (in press).

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Naoi, Y.Naoi and S.Sakai: "MOCVD Growth of InAsN for infrared Applications" Solid State Electronics. (in press).

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Kurai, K.Nishino and S.Sakai: "Nucleation Control in the Growth of Bulk Gan by Sublimation method" Jpn.J.Appl.Phys.(in press).

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Sato, Y.Naoi and S.Sakai: "X-ray Diffraction Analysis of GaN and GaN/InGaN/GaN Double-Hetero Structures Grown on Sapphire Substrate by MOCVD" Jpn.J.Appl.Phys.(in press).

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-03-09  

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