1996 Fiscal Year Annual Research Report

III-V族半導体量子構造の表面準位の制御とその光デバイスへの応用

Research Project

Project/Area Number	07455017
Research Institution	HOKKAIDO UNIVERSITY
Principal Investigator	長谷川英機北海道大学, 工学部, 教授 (60001781)
Co-Investigator(Kenkyū-buntansha)	赤沢正道北海道大学, 工学部, 助教授 (30212400) 本久順一北海道大学, 量子界面エレクトロニクス研究センター, 助教授 (60212263) 橋詰保北海道大学, 工学部, 助教授 (80149898)
Keywords	量子細線 / 量子井戸 / 化合物半導体 / 界面制御 / 表面・界面準位 / 表面不活性化 / シリコン界面制御層 / フォトルミネセンス
Research Abstract	III-V族半導体を利用した量子デバイスは、新しい原理にもとづく次世代集積エレクトロニクスを構築できる可能性がある。これまでは、表面準位の多い表面をさけ、深く埋め込まれた量子構造を形成・評価する研究が全世界的に主流で、プレーナー集積化の展望は全く確立していない。本研究は、III-V族化合物半導体の量子構造の閉じ込み量子準位と表面の相互作用の機構を解明し、「シリコン超薄膜界面制御層」を用いる独自の表面・界面制御技術を用いて制御し、プレーナー集積化可能な新光デバイス構築の展望を開こうとするものである。得られた主要な成果を以下にまとめる。 1)表面から5nmと極浅い位置にGaAs/AlGaAs量子井戸を形成した場合、半導体内部に形成した場合と比較して、量子井戸からのフォルトミネッサンス(PL)強度は約1/1000に減少することを確認し、この現象が表面準位と量子準位の強い相互作用によるものであることを明らかにした。シリコン超薄膜界面制御層技術を用いて本質的な表面不活性化を行うことで、このPL強度の完全な回復を世界で初めて達成した。(表面科学17巻9号に論文発表) 2)光電子分光法による化学分析によって、シリコン界面制御技術を用いた不活性化膜/半導体界面では半導体表面の酸化や窒化が見られず、良好な界面が形成されていることを明らかにした。(表面科学17巻9号に論文発表) 3)シリコン超薄膜界面制御層技術を用いることで、不活性化膜である絶縁層を障壁層とした量子細線のPLが常温近くまで観測する事が世界で初めて成功した。また、Si超薄膜界面制御層を持たないInGaAs/InAlAs量子細線に対して、PL光強度を400倍以上改善することができた。(PCSI23にて公表、J. Vac. Sci. Technol. 14巻4号に掲載) 4)さらにこの新しい表面制御技術を、エッチングによって形成した量子細線の界面不活性化に応用し、形成した量子細線からのPL発光の改善に成功した。(SSDM96(8月))にて公表、JJAP36巻3号に掲載決定) 5)パッシベーションの効果を計算機シミュレーションにより検討した結果、Si超薄膜界面制御層により表面・界面準位密度が大幅に低減されたことが明らかとなった。この技術は、量子ドットにも有効と期待される。(第2回半導体界面制御国際シンポジウムで公表、Appl. Sur. Sciに掲載決定)

Research Products
(35 results)

All Other

All Publications (35 results)

[Publications] T. Saitoh: ""Detemination of Built-in Electric Field Strength in InP/n^+- InP Structures Using Photoellipsometry"" Japanese Journal of Applied Physics. 35. 1696-1700 (1996)
[Publications] B. W. Yang: ""Properties of InAs_xP_<1-x>Layer Formed by P-As Exchange Reaction on (001) InP Surface Exposed to AS_4 Beam"" Journal of Electronic Materials. 25. 379-384 (1996)
[Publications] H. Fujikura: ""Fabrication of InP-Based InGaAs Ride Quantum Wires Utilizing Selective Moleculat Beam Epitaxial Growth on (311) A Facets"" Journal of Electronic Materials. 25. 619-625 (1996)
[Publications] S. Suzuki: ""A Novel Insulated Gate Technology for InGaAs High Electron Mobility Transistors Using Silicon Interlayer Based Passivation Technique"" Journal of Electronic Materials. 25. 649-656 (1996)
[Publications] B. X. Yang: ""Scanning Tunneling Microsocope Study of (001) InP Surface Prepared by Gas Source Molecular Beam Epitaxy"" Japanese Journal of Applied Physics. 35. 1267-1272 (1996)
[Publications] H. Fujikura: ""Photoluminescence and Cathodoluminescence Investigation of Optical Properties of InP-Based InGaAs Ridge Quantum Wires Formed by Selective Molecular Beam Epitaxy"" Japanese Journal of Applied physics. 35. 1333-1339 (1996)
[Publications] S. Kasai: ""Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers"" Japanese Journal of Applied Physics,. 35. 1340-1347 (1996)
[Publications] S. Kasai: ""Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates"" Japanese Journal of Applied Physics. 35. 6652-6658 (1996)
[Publications] S. Uno: ""0.86eV Platinm Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs"" Japancse Journal of Applied Physics. 35. 1258-1263 (1996)
[Publications] S. Koyanagi: ""Contactless and Nondestructive Characterization of Silicon Surcaces by Capacitance-Voltage and Photoluminesence Methods"" Japanese Journal of Applied Physics. 35. 946-953 (1996)
[Publications] K. Jinushi: ""Novel GaAs-Based Single Electron Transistors with Schottky In-Plane Gates Operating up to 20K"" Japanese Journal of Applied Physics. 35. 1132-1139 (1996)
[Publications] H. Fujikura: ""Surface Passivation of In_<0.53> Ga_<0.47> As Ridge Quantum Wires Using Silicon Interface Control Layers"" Jounal of Vacuum Science and Technology. B-14. 2888-2894 (1996)
[Publications] T. Hashizume: ""Contactless Capacitance-Voltage and Photoluminescence Characterization of Ultrnthin Oxide-Silicon Interfaces Formed on Hydrogen Terminated (111) Surfaces"" J. Vac. Sci. Technol.B-14. 2872-2881 (1996)
[Publications] T. Hashizume: ""Quantum Transport in A Schottky In-Plane-Gate Controlled GaAs/AlGaAs Quantum Well Wires"" Phisica B. 227. 42-45 (1996)
[Publications] H. Tomozawa: ""Design and Fabrication of GaAs/AlGaAs Single Electron Transistors Based on In-Plane Schottky Gate Control of 2DEG"" Phisica B. 227. 112-115 (1996)
[Publications] S. Shiobara: ""Deep Level and Conduction Mechanism in Low-Temperature GaAs Grown by Molecular Beam Epitaxy"" Japanese Journal of Applied Physics. 35. 1159-1164 (1996)
[Publications] 長谷川英機: "「化合物半導体量子細線および量子ドットの製作」" 『光学』. 25 (8). 448-455 (1996)
[Publications] 長谷川英機: "「化合物半導体量子構造表面のSi超薄膜界面制御層によるパッシベーション」" 『表面科学』. 17 (9). 567-574 (1996)
[Publications] 長谷川英機: "「InP系化合物半導体材料およびデバイスの新展開」" 『応用物理』. 65 (2). 108-118 (1996)
[Publications] M. Araki: "Formation of InGaAs/InAlAs Quatum Wires and Dots with Extremely Smooth Facets on Mesa-Patterned (001) InP Substrates by Selective Molecular Beam Enitaxy"" Jpn. J. Appl. Phys. 36 (3) (印刷中). (1997)
[Publications] H. Fujikura: ""Exciation Power Dependent Photoluminescence Behavior in Etched Quantum Wires Having Silicon Interlayer-Based Edge Passivation and Its Interpretation"" Jpn. J. Appl. Phys.36 (3) (印刷中). (1997)
[Publications] S. Kasai: ""Fabrication and Charaterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas" Jpn. J. Appl. Phys.36 (3) (印刷中). (1997)
[Publications] H. Okada: "Observation of Coulomb Blockade Type Conductance Oscvillations up to 50 K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates," Jpn. J. Appl. Phys.36 (3) (印刷中). (1997)
[Publications] T. Sato: "Large Schottky Barrier Heights on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process." Jpn. J. Appl. Phys.36 (3) (印刷中). (1997)
[Publications] K. Ikeya: "Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control Layer-Based Technique," Jpn. J. Appl. Phys.36 (3) (印刷中). (1997)
[Publications] Y. Dohmae: "Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitor Having Silicon Inteface Control Layer," Jpn. J. Appl. Phys.36 (3) (印刷中). (1997)
[Publications] T. Yoshida: "Charaterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si(111) Sufaces by Contactless Capacitance-Voltage and Photoluminescence Methods," Jpn. J. Appl. Phys.36 (3) (印刷中). (1997)
[Publications] H. Hasegawa: "Evolution Mechanism of Nearly-Pinning Platinum/N-Type Indium Phosphide Interface with a High Schottky Barrier Height by In-Situ Electrochemical Process," J. Vac. Sci. Technol.B15 (4) (印刷中). (1997)
[Publications] H. Okada: "Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires," Jpn. J. Appl. Phys.36 (3) (印刷中). (1997)
[Publications] T. Kudoh: "Controlled Formation of Metal-semicondctor Interface to 2DEG Layer by In-Situ Electrochemical Process and Its Application to In-Plane Electron Waveguide Devices" Appl. Sun. Sci.(印刷中). (1997)
[Publications] K. Iizuka: "Small-Signal Response of Interface States at Passivated InGaAs Surfaces from Low Frequencies up to Microwave Frequencies," Solid-State Electron.(印刷中). (1997)
[Publications] Y. Ishikawa: "Missing-dimer structures and their kink defects on molecular beam epitaxially grown (2×4) reconstructed (001) InP and GaAs surfaces studied by ultrahigh-vacum scanning tunneling microsccopy" Jpn. J. Appl. Phys.36 (3) (印刷中). (1997)
[Publications] H. Haseguwa: "Interface-controled Schottky barriers on InP and related materials" Solid-State Electronics. (印刷中). (1997)
[Publications] S. Suzuki: "Fabrication and electrical characterization of InP-based insulated gate power HEMTs using ultrathin Si intefcae control layer" Solid-State Electronics. (印刷中). (1997)
[Publications] M. Kihara: ""Effect of Mis-Orientaition of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Moteclar Beam Epitaxy"" Appl. Sur. Sci.(印刷中). (1997)

1996 Fiscal Year Annual Research Report

III-V族半導体量子構造の表面準位の制御とその光デバイスへの応用

Principal Investigator

長谷川 英機 北海道大学, 工学部, 教授 (60001781)

Research Products

[Publications] T. Saitoh: ""Detemination of Built-in Electric Field Strength in InP/n^+- InP Structures Using Photoellipsometry"" Japanese Journal of Applied Physics. 35. 1696-1700 (1996)

[Publications] B. W. Yang: ""Properties of InAs_xP_<1-x>Layer Formed by P-As Exchange Reaction on (001) InP Surface Exposed to AS_4 Beam"" Journal of Electronic Materials. 25. 379-384 (1996)

[Publications] H. Fujikura: ""Fabrication of InP-Based InGaAs Ride Quantum Wires Utilizing Selective Moleculat Beam Epitaxial Growth on (311) A Facets"" Journal of Electronic Materials. 25. 619-625 (1996)

[Publications] S. Suzuki: ""A Novel Insulated Gate Technology for InGaAs High Electron Mobility Transistors Using Silicon Interlayer Based Passivation Technique"" Journal of Electronic Materials. 25. 649-656 (1996)

[Publications] B. X. Yang: ""Scanning Tunneling Microsocope Study of (001) InP Surface Prepared by Gas Source Molecular Beam Epitaxy"" Japanese Journal of Applied Physics. 35. 1267-1272 (1996)

[Publications] H. Fujikura: ""Photoluminescence and Cathodoluminescence Investigation of Optical Properties of InP-Based InGaAs Ridge Quantum Wires Formed by Selective Molecular Beam Epitaxy"" Japanese Journal of Applied physics. 35. 1333-1339 (1996)

[Publications] S. Kasai: ""Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers"" Japanese Journal of Applied Physics,. 35. 1340-1347 (1996)

[Publications] S. Kasai: ""Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates"" Japanese Journal of Applied Physics. 35. 6652-6658 (1996)

[Publications] S. Uno: ""0.86eV Platinm Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs"" Japancse Journal of Applied Physics. 35. 1258-1263 (1996)

[Publications] S. Koyanagi: ""Contactless and Nondestructive Characterization of Silicon Surcaces by Capacitance-Voltage and Photoluminesence Methods"" Japanese Journal of Applied Physics. 35. 946-953 (1996)

[Publications] K. Jinushi: ""Novel GaAs-Based Single Electron Transistors with Schottky In-Plane Gates Operating up to 20K"" Japanese Journal of Applied Physics. 35. 1132-1139 (1996)

[Publications] H. Fujikura: ""Surface Passivation of In_<0.53> Ga_<0.47> As Ridge Quantum Wires Using Silicon Interface Control Layers"" Jounal of Vacuum Science and Technology. B-14. 2888-2894 (1996)

[Publications] T. Hashizume: ""Contactless Capacitance-Voltage and Photoluminescence Characterization of Ultrnthin Oxide-Silicon Interfaces Formed on Hydrogen Terminated (111) Surfaces"" J. Vac. Sci. Technol.B-14. 2872-2881 (1996)

[Publications] T. Hashizume: ""Quantum Transport in A Schottky In-Plane-Gate Controlled GaAs/AlGaAs Quantum Well Wires"" Phisica B. 227. 42-45 (1996)

[Publications] H. Tomozawa: ""Design and Fabrication of GaAs/AlGaAs Single Electron Transistors Based on In-Plane Schottky Gate Control of 2DEG"" Phisica B. 227. 112-115 (1996)

[Publications] S. Shiobara: ""Deep Level and Conduction Mechanism in Low-Temperature GaAs Grown by Molecular Beam Epitaxy"" Japanese Journal of Applied Physics. 35. 1159-1164 (1996)

[Publications] 長谷川英機: "「化合物半導体量子細線および量子ドットの製作」" 『光学』. 25 (8). 448-455 (1996)

[Publications] 長谷川英機: "「化合物半導体量子構造表面のSi超薄膜界面制御層によるパッシベーション」" 『表面科学』. 17 (9). 567-574 (1996)

[Publications] 長谷川英機: "「InP系化合物半導体材料およびデバイスの新展開」" 『応用物理』. 65 (2). 108-118 (1996)

[Publications] M. Araki: "Formation of InGaAs/InAlAs Quatum Wires and Dots with Extremely Smooth Facets on Mesa-Patterned (001) InP Substrates by Selective Molecular Beam Enitaxy"" Jpn. J. Appl. Phys. 36 (3) (印刷中). (1997)

[Publications] H. Fujikura: ""Exciation Power Dependent Photoluminescence Behavior in Etched Quantum Wires Having Silicon Interlayer-Based Edge Passivation and Its Interpretation"" Jpn. J. Appl. Phys.36 (3) (印刷中). (1997)

[Publications] S. Kasai: ""Fabrication and Charaterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas" Jpn. J. Appl. Phys.36 (3) (印刷中). (1997)

[Publications] H. Okada: "Observation of Coulomb Blockade Type Conductance Oscvillations up to 50 K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates," Jpn. J. Appl. Phys.36 (3) (印刷中). (1997)

[Publications] T. Sato: "Large Schottky Barrier Heights on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process." Jpn. J. Appl. Phys.36 (3) (印刷中). (1997)

[Publications] K. Ikeya: "Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control Layer-Based Technique," Jpn. J. Appl. Phys.36 (3) (印刷中). (1997)

[Publications] Y. Dohmae: "Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitor Having Silicon Inteface Control Layer," Jpn. J. Appl. Phys.36 (3) (印刷中). (1997)

[Publications] T. Yoshida: "Charaterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si(111) Sufaces by Contactless Capacitance-Voltage and Photoluminescence Methods," Jpn. J. Appl. Phys.36 (3) (印刷中). (1997)

[Publications] H. Hasegawa: "Evolution Mechanism of Nearly-Pinning Platinum/N-Type Indium Phosphide Interface with a High Schottky Barrier Height by In-Situ Electrochemical Process," J. Vac. Sci. Technol.B15 (4) (印刷中). (1997)

[Publications] H. Okada: "Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires," Jpn. J. Appl. Phys.36 (3) (印刷中). (1997)

[Publications] T. Kudoh: "Controlled Formation of Metal-semicondctor Interface to 2DEG Layer by In-Situ Electrochemical Process and Its Application to In-Plane Electron Waveguide Devices" Appl. Sun. Sci.(印刷中). (1997)

[Publications] K. Iizuka: "Small-Signal Response of Interface States at Passivated InGaAs Surfaces from Low Frequencies up to Microwave Frequencies," Solid-State Electron.(印刷中). (1997)

[Publications] Y. Ishikawa: "Missing-dimer structures and their kink defects on molecular beam epitaxially grown (2×4) reconstructed (001) InP and GaAs surfaces studied by ultrahigh-vacum scanning tunneling microsccopy" Jpn. J. Appl. Phys.36 (3) (印刷中). (1997)

[Publications] H. Haseguwa: "Interface-controled Schottky barriers on InP and related materials" Solid-State Electronics. (印刷中). (1997)

[Publications] S. Suzuki: "Fabrication and electrical characterization of InP-based insulated gate power HEMTs using ultrathin Si intefcae control layer" Solid-State Electronics. (印刷中). (1997)

[Publications] M. Kihara: ""Effect of Mis-Orientaition of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Moteclar Beam Epitaxy"" Appl. Sur. Sci.(印刷中). (1997)

長谷川英機北海道大学, 工学部, 教授 (60001781)