1996 Fiscal Year Final Research Report Summary
Controls of surface structures, their domain structures, and surface electrical conduction
| Project/Area Number |
07455018
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
表面界面物性
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| Research Institution | The University Tokyo |
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Principal Investigator |
HASAGAWA Shuji The University of Tokyo, School of Science, Associate Professor, 大学院・理学系研究科, 助教授 (00228446)
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| Co-Investigator(Kenkyū-buntansha) |
INO Shozo The University of Tokyo, School of Science, Professor, 大学院・理学系研究科, 教授 (70005867)
NAGAO Tadaaki The University of Tokyo, School of Science, Research Associate, 大学院・理学系研究科, 助手 (40267456)
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| Project Period (FY) |
1995 – 1996
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| Keywords | silicon / surface superstructures / surface electrical conduction / scanning tunneling microscopy / deposition / metal / semiconductor interface / two-dimensional gas phase / domains |
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| Research Abstract |
(1)In the last year, we found that Ag atoms deposited on the Si(111)-ROO<3>xROO<3>-Ag surface at room temperature formed a two-dimensional ges phase which remarkably enhanced the surface electrical conductance. In this year, we have succeeded to clarify the mechanism. Ag adatoms donates electrons into a surface-state band of the substrate surface, resulting in the enhancement of conductivity through the surface-state band. On the other hand, the carrier concentration in the surface space-charge layr have found to be decreased. This is the first time in the world to experimentally confirm the conductivity enhancement due to carrier doping by adsorbates into a surface-state band.
(2)We have already found that Au deposition on the Si(111)-ROO<3>xROO<3>-Ag surface induces a ROO<21>xROO<21> surface superstructure which exhibits an extremely high electrical conductance. In this year, we have investigated the correlation between the structure and electronic transport property based on scanning tunneling microscopy and photoemission spectroscopy measurements. We have then found that a highly dispersive surface-state band is newly formed, and the carriers therein makes the conductivity high. This is the first time in the world to experimentally confirm the electrical conduction through a surface-state band.
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