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1996 Fiscal Year Final Research Report Summary

Research on Wave Phenomena of Hot Electron at the Insulator Interface and Its Application to Functional Electron Devices

Research Project

Project/Area Number 07455132
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionTOKYO INSTITUTE OF TECHNOLOGY

Principal Investigator

ASADA Masahiro  Tokyo Institute of Technology, Department of Electrical and Electronic Engineering, Associate Professor, 工学部, 助教授 (30167887)

Co-Investigator(Kenkyū-buntansha) WATANABE Masahiro  Tokyo Institute of Technology, Research Center for Quantum Effect Electronics, A, 量子エレクトロニクス研究センター, 助教授 (00251637)
Project Period (FY) 1995 – 1996
Keywordsmetal-insulator superlattice / cobalt silicide / calcium fluoride / ion-beam epitaxy / quantum-effect devices / hot electron interference / quantum interference transistor / 量子干渉トランジスタ
Research Abstract

This research was done aiming at the observation of new quantum-size effect at the interfaces in metal-insulator multilayred heterstructures, which effect can be very little observed in conventional semiconductor heterostructures, and its application to functional electron devices. The results are summarized as follows.
Metal (CoSi_2) -insulator (CaF_2) ultrathin multilayred structures were grown on silicon substrate using low-temperature ion-beam epitaxial growth technique for the insulator and the two-step epitaxy of silicon and cobalt for the silicide metal. Using these strucures, a transistor composed of resonant tunneling emitter and electron interferometer was fabricated for the observation of quantum interference at the metal-insulator interface of hot electrons injected into the insulator conduction band. Multiple negative resistance which can be attributed to the interference of hot electrons was observed at the liquid nitrogen temperature. The observed characteristics were in reasonable agreement with theoretical expectation in terms of the voltage interval between the negative differential resistance and also with the circuit simulation results including parasitic elements. It is shown theoretically that the parasitic resistance and leak current considerably degrade the peak-to-valley ratio of the negative differential resistance. In order to suppress the influence of the parasitic resistance, the reduction of the in-plane device size using electron-beam lithography was proposed, and related fabrication process was established. According to this process, a small-size transistor was fabricated and the multiple negative differential resistance was observed at room temperature. For the leak current, which is the other factor degrading the transistor characteristics, several origins and their relation to fabrication process were discussed considering the size dependence of the device characteristics.

  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] Masahiro ASADA: "A Possible Three-Terminal Amplifier Device in the Terahertz Frequency Range Using Photon-Assisted Tunneling" Japanese Journal of Applied Physics. 35[6A]. L685〜L687 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Wataru SAITOH,et al: "Proposal and Analysis of Very Short Channel Field Effect Transistor Using Vertical Tunneling with New Heterostructures on Silicon" Japanese Journal of Applied Physics. 35[9A]. L1104〜L1106 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Masahiro ASADA: "Proposal and Analysis of a Three-Terminal Photon-Assisted Tunneling Device Operating in the Terahertz Frequency Range" IEICE Transaction Electronics. E79-C[11]. 1537〜1542 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Takashi SUEMASU,et al: "Transfer Efficiency of Hot Electron in a Metal(CoSi2)/Insulator(CaF2) Quantum Interference Transistor" Surface Science. 361/362. 209〜212 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kaoru MORI,et al: "Room-Temperature Observation of Multiple Negative Differential Resistance in a Metal(CoSi2)/Insulator(CaF2) Quantum Interference Transistor Structure" Physica B. 227. 213〜215 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Yoshifumi KOHNO,et al: "Theoretical Base Current in Metal/Insulator Resonant Tunneling Transistors Based on Electron Wave Scattered by Base Port Structure" Physica B. 227. 216〜219 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Masahiro ASADA: "A Possible Three-Terminal Amplifier Device in the Terahertz Frequency Range Using Photon-Assisted Tunneling" Japanese Journal of Applied Physics. vol.35. L685-L687 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Wataru SAITOH,Katsuyuki YAMAZAKI,Masahiro ASADA,and Masahiro WATANABE: "Proposal and Analysis of Very Short Channel Field Effect Transistor Using Vertical Tunneling with New Heterostructures on Silicon" Japanese Journal of Applied Physics. vol.35. L1104-L1106 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Masahiro ASADA: "Proposal and Analysis of a Three-Terminal Photon-Assisted Tunneling Device Operating in the Terahertz Frequency Range" IEICE Transaction on Electronics. vol.E79-C. 1537-1542 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Takashi SUEMASU,Wataru SAITOH,Yoshifumi KOHNO,Kaoru MORI,Masahiro WATANABE,and Masahiro ASADA: "Transfer Efficiency of Hot Electron in a Metal (CoSi_2) /Insulator (CaF_2) Quantum Interference Transistor" Surface Science. vol.361/362. 209-212 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kaoru MORI,Wataru SAITOH,Takashi SUEMASU,Yoshifumi KOHNO,Masahiro WATANABE,and Masahiro ASADA: "Room-Temperature Observation of Multiple Negative Differential Resistance in a Metal (CoSi_2) /Insulator (CaF_2) Quantum Interference Transistor Structure" Physica B. vol.227. 213-215 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Yoshifumi KOHNO and Masahiro ASADA: "Theoretical Base Current in Metal/Insulator Resonant Tunneling Transistors Based on Electron Wave Scattered by Base Port Structure" Physica B. vol.227. 216-219 (1996)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-03-09  

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