1997 Fiscal Year Final Research Report Summary
The mechanism for the 1.54 mum luminescence of erbiumdoped porous silicon and the method of attaining a high efficiency.
| Project/Area Number |
07455135
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | University of Electro-Communications |
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Principal Investigator |
KIMURA Tadamasa University of Electro-Communication, Deprtment of Electro-Communications, Professor, 電気通信学部, 教授 (50017365)
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| Co-Investigator(Kenkyū-buntansha) |
SAITO Riichiro University of Electro-Communications, Department of Electro-Communications, Asso, 電気通信学部, 助教授 (00178518)
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| Project Period (FY) |
1995 – 1997
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| Keywords | rare-earth ion / luminescence / erbium / ytterbium / neodium / holmium / porous silicon / silicon optical device |
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| Research Abstract |
In the 1997 research year, Er, Yb, Nd as well as Ho were chosen as rare earth elements and were incorporated into porous silicon (PS) as well as crystalline silicon (c-Si) hosts.
The 1.54 mum luminescence due to the 4f electron transition from Er-dope PS showed formerly a width of about 10nm. In this research period, we introduced a hydrogen plasma annealing at -1000ﾟC after Er incorporation and obtained spectra composed of sharp peaks whose full-width-at-half-maximu (FWHM) is less than 1nm. We explained that silicon oxide and amorphous silicon regions were etched off by the hydrogen plasma treatment and that the remained Er-doped silicon nanocrystals showed sharp peaks.
These sharp luminescence peaks exibited a small thermal quenching. This was due to the increased bandgap of silicon nanocrystals : (Presented in the MRS 1997 Fall Meeting, and submitted to J.Apple.Phys.)
We studied the Yb - 1.0 mum luminescenece from Yb doped PS as a function of host PS treatment processes. Pre-oxidation of PS resulted in the one-order increase in the Yb luminescence intensty. Measurements of the decay times of PS and Yb luminescence showed that the passivation of the dangling bonds of PS with oxygen reduced the nonradaitive recombination centers, which led to an increse in the enrgy transfer efficiency from PS to Yb. (presented in J.Appl.Phys.)
We measured the decay time of Nd doped PS,and obtained the decay times of 200-300 mus for the 0.93 mum and 1.06 mum luminescence peaks. In colaboration with Dr.A.Polman of FOM institue in Amsterdam, Ho ions were inplanted into c-Si, and the luminescence at - 1.2 mum due to the 4f-electron transition was observed for the first time.
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Research Products
(13 results)
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[Publications] H.Horiguchi, T.Kinone, R.Saito, T.Kimura and T.Ikoma: "Photoluminescence of erbium-diffused silicon" Materials Research Society Symposium Proceedings vol.422, Rare Earth Doped Semiconductors II,ed.by S.Coffa, A.Polman, and R.N.Schwartz, San Francisco, April 8-10,1996. 81-86 (1996)
Description
「研究成果報告書概要(欧文)」より
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[Publications] T.Kimura, I.Hosokawa, Y.Nishida, T.Dejima, R.Saito and T.Ikoma: "Luminescence of rare earth doped porous silicon" Materials Research Society Symposium Proceedings vol.422, Rare Earth Doped Semiconductors II,ed.by S.Coffa, A.Polman, and R.N.Schwartz, San Francisco, April 8-10,1996. 149-154 (1996)
Description
「研究成果報告書概要(欧文)」より
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[Publications] Tadamasa Kimura, Y.Nishida, T.Dejima, R.Saito, and H.Isshiki: "Time decay characteristcis of the Yb^<3+> -related 0.98 mum emissions in porous silicon" Proceedings of the MRS '97 Fall Meeting (December 1-5,1997, Boston, MA) : Materials and Devices for Silicon-Based Optoelectronics, ed.J.E.Cunningham, S.Coffa, A.Polman, R.Soret. (1998)
Description
「研究成果報告書概要(欧文)」より
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[Publications] T.Dejima, R.Saito, S.Yugo, H.Isshiki, and Tadamasa Kimura: "Optical activation of erbium doped porous silicon by hydrogen plasma treatment" Proceedings of the MRS '97 Fall Meeting (Decmber 1-5,1997, Boston, MA) : Materials and Devices for Silicon-Based Optoelectronics, ed.J.E.Cunningham, S.Coffa, A.Polman, R.Soret. (1998)
Description
「研究成果報告書概要(欧文)」より
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