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1997 Fiscal Year Final Research Report Summary

Fabrication of Digital Circuits by self-formation of atomic layr steps

Research Project

Project/Area Number 07555112
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section展開研究
Research Field 電子デバイス・機器工学
Research InstitutionToyo University

Principal Investigator

SUGANO Takuo  Toyo Univ.ElectRIc Eng., Professor, 工学部, 教授 (50010707)

Co-Investigator(Kenkyū-buntansha) WADA Yasuo  Hitachi Basic Research Lab., Chief Researche, 基礎研究所, 主任研究員
HANAJIRI Tatsuro  Toyo Univ.Electric Eng., Lecture, 工学部, 講師 (30266994)
Project Period (FY) 1995 – 1997
Keywordssubstrate with samll off-set / Self-organization / imbricate step / terrace structure / Anisotropic etching / Scnning Tunnel Microscope / Atomic Force Microscope / single electron tunnel transistor / Asymmetric Tunnel Barrier
Research Abstract

Application of atomic layr step/terrace on Si surface to fabrication technology of ultra small capacitance array without using lithography.
Set up for controlling self-organization phenonena on Si surfaces was already prepared. It contained STM (Scanning Tunnel Microscope) system including H-radical gun, K-cell and AFM (Atomic Force Microscope). Fabrication of ultra-small structures using this set up is explored.
Formation of single or double atomiclayr steps was achieved with high cotrollability by annealing of Si (100) substrates with small off-set under ultra-high vacuum condition. Samples were heated by passing current through them and the off-set angles of Si (100) substrates are toward <011> direction. Fabrication of rectangular imbricate two atomic layr step/terrace structure using silicon substrate with (100) surface off setting <011> direction was succeeded, and this structure was observed by STM (Scanning Tunnel Microscope). More large-scale rectangular imbricate step/terrace structure was also obtained using anisotropic etching of Si substarte, and it was observed by AFM (Atomic Force Microscope).

  • Research Products

    (10 results)

All Other

All Publications (10 results)

  • [Publications] Y.Matsumoto, T.Hanajiri, T.Toyabe, T.Sugano: "“Single electron device with asymmetric tunnel barriers"" Jpn.J.Appl.Phys.35. 655-660 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Matsumoto, T.Hanajiri, T.Toyabe, T.Sugano: "“Advantages of the Asymmetric Tunnel Barrier for High Density Integration of Single Electron Devices"" Jpn.J.Appl.Phys.36. 4143-4146 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Hanajiri, T.Toyabe, T.Sugano: "“Performances of Single Electron Devices with Asymmetric Tunnel Barriers"" Proc.of 3rd Int.Workshop on Quantum Functional Devices. 65-66 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Hanajiri, R.Shimizu, T.Sugano: "“Formation of Ultra-small Structures on Si utilizing Self-Organization for Fabrication of Single Electron Devices"" Proc.of 2nd Symposium on Atomic Scale Structures and Interface Dynamics. 39-40 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 内田, 花尻, 菅野: "「リセス構造を用いた単電子トランジスタ(II)」" 第58回応用物理学会学術講演会予稿集. II. 58 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 清水, 多田, 花尻, 菅野: "「単電子素子作製のための鱗片状ステップ/テラス構造の作製」" 第59回応用物理学会学術講演会予稿集. 60

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Matsumoto, T.Hanajiri, T.Toyabe and T.Sugano: ""Single electron device with asymmetric tunnel barriers"" Jpn.J.Appl.Phys.vol.35. 655-660 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Matsumoto, T.Hanajiri, T.Toyabe and T.Sugano: ""Advantages of the Asymmetric Tunnel Barrier for High Density Integration of Single Electron Devices"" Jpn.J.Appl.Phys.vol.36. 4143-4146 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Hanajiri, T.Toyabe and T.Sugano: ""Performances of Single Electron Devices with Asymmetric Tunnel Barriers"(invited)" Proc.of 3rd.Int.Workshop on Quantum Functional Devices (Gaithersburg, USA,Nov.5.1997). 65-66

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Hanajiri, R.Shimizu and T.Sugano: "Formation of Ultra-small Structures on Si utilling Self-organization for Fabrication of Single Electron Devices"" Proc.of The Second Symposium on Atomic-Scale Surface and Interface Dynamics (Tokyo, Feb.27.1998). 65-66

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-03-16  

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