1996 Fiscal Year Final Research Report Summary
Micro flow systems for semiconductor monolayr growth process
| Project/Area Number |
07650002
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
KURABAYASHI Toru Tohoku University, Faculty of Engineering, Lecturer, 工学部, 講師 (90195537)
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| Co-Investigator(Kenkyū-buntansha) |
ESASHI Masayoshi Tohoku University, Faculty of Engineering, Professor, 工学部, 教授 (20108468)
MINAMI Kazuyuki Tohoku University, Faculty of Engineering, Lecturer, 工学部, 講師 (00229759)
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| Project Period (FY) |
1995 – 1996
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| Keywords | monolayr growth / micro flow control system / micro valve / corrugated diaphragm / etching stop / Au-Si eutectic bending / bakable / control fine gas flow |
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| Research Abstract |
Bakable micro flow system with microvalve was fabricated using silicon micromachining. This microvalve uses the pneumatic actuators having corrugated diaphragms to get a large displacement of the valve plunger for large flow rate. The corrugated diaphragm has a large deflection compared to a flat diaphragm. The deflection of the diaphragm was measured by the displacement of the microscope which was focused on the diaphragm surface. The expermental results of the deflection agree approximately with the simulated results.
Au-Si eutectic bonding is important for the microvalve fabrication process. We investigated Au-Si eutectic bonding and measured the bonding strength at different Au thickness.The microvalve is anodically bonded to the Kovar alloy block after the Au-Si eutectic bonding. At the beginning the microvalve was designed by using the electrostatic force and the pneumatic force. However, the electro static force control was difficult, we used the pneumatic actuators. The bakable silicon microvalve has been developed by using silicon micromachining technology, the gas flow rate could be controlled from 0.1 sccm to 35 sccm, at 25-120ﾟC,and the valve had a small leakage of about 0.08 sccm. The microvalve is expected to be applied for advanced semiconductor device fabrication processes.
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