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1996 Fiscal Year Final Research Report Summary

Studies of Plasma Etching and Radical Reaction Mechanism Employing Radical Injection Technique

Research Project

Project/Area Number 07650032
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field 表面界面物性
Research InstitutionNagoya University

Principal Investigator

HORI Masaru  NAGOYA UNIVERSITY ASSOCIATE PROFESSOR, 工学部, 助教授 (80242824)

Project Period (FY) 1995 – 1996
KeywordsRADICAL / PLASMA / ETCHING / FLUOROCARBON / SILICON / CF_2 / INFRARED LASER / ECR
Research Abstract

1. Development of Etching Apparatus Employing Radical Injection Technique
Radical source was newly developed to generate CF_2 radicals selectively by using pyrolysis of HFPO gas.
Radical source was evaluated by infrared laser absorption spectroscopy and so CF_2 radical density was 1x 10^<13>cm^<-3> at 0.67Pa and 900K of the wall of radical source.
Therefore, we have successfully developed the CF^2 radical source.
2. Controlling of Radical Species and Clarification of Radical Reaction Mechanism Employing Radical Injection Technique
The radical source was attached to the ECR etching apparatus and CF_2 radicals were injected into ECR Ar or Ar/H_2 downstream plasma. The fluorocarbon films were analyzed by XPS and FT-IR method.
It was found that CF_2 radical was the important precursor for the formation of fluorocarbon films with irradiation of ions.
In the case of ECR Ar plasma, fluorine-rich films were formed. Onthe other hand, carbon-rich films were formed in ECR Ar/H_2 plasma.
3. High Selectively Etching of SiO_2/Si Employing Radical Injection Technique
SiO_2/Si Etching was performed by CF_2 radical injection into ECR ECR Ar or Ar/H_2 downstream plasma. With-200V of 400kHz rf biases, the etching selectivity was about 3 in Ar plasma with CF_2 radical injection. On the other hand, the selectivity was infinite in Ar/H_2 plasma.
Consequently, we found the high selectively etching of SiO_2/Si was obtained by controlling the CF_2 radicals.

  • Research Products

    (21 results)

All Other

All Publications (21 results)

  • [Publications] Kunimasa Takahashi: "Evaluation of CF2 Radical as a Precursor for Fluorocarbon Film Formation in Highly Selective SiO2 Etching Process Using Radical Injection Technique" Jpn. J. Appl. Phys.35. 3635-3641 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Toshio Goto: "Radical Behavior in Fluorocarbon Plsma and Control of Silicon Oxide Etching by Injection of Radicls" Jpn. J. Appl. Phys.35. 6521-6527 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kunimasa Takahashi: "Control and Qualification of Precursor in SiO2 High Selective Etching Emplpying Radical Injection Technique" Proceedings of the 17th Symposium on Dry Process. 17. 237 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Masaru Hori: "Etching Control and Clarification of Important Radical for Etching by Employing Radical Injection Method" Proceedings of SEMI Technology Symposium 95. 1-56-1-60 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Toshio Goto: "Radical Behavior in Fluorocarbon Plasma and Control of Silicon Oxide Etching by Injection of Radicals" Proceedings of the 9th International MicroProcess Conference. 9. 24-29 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 堀 勝: "プラズマプロセスにおけるラジカルの気体一個体作用" 放電研究. 151. 3-10 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 堀 勝: "ドライエッチング中の反応種計測" ウルトラクリーンテクノロジー. 8. 265-268 (1966)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Masaru Hori: "Surface Reaction of CF2 Radical in Fluorocarbon Plasma Etching Process" Proceedings of 189th Meeting of the Electrochemical Society. 189. 229 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 堀 勝: "酸化膜エッチングプロセスにおけるラジカル挙動" Proceedings of Electronic Journal 3rd Techincal Symposium. 3. 99-106 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Masaru Hori: "Surfce Reaction of CF2 Radicals in Silicon Oxide Selective Etching Procss" International Workshop on Basic Aspects of Nonequilibrium Plasmas Interacting with Surface. 1. 11-12 (1966)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 堀 勝: "プラズマ講習会テキスト" (社)応用物理学会 プラズマエレクトロニクス分科会, 106 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kunimasa Takahashi et al.: "Evaluation of CF_2 Radical as a Precursor for Fluorocarbon Film Formation in Highly Selective SiO_2 Etching Process Using Radical Injection Technique" Jpn.J.Appl.Phys.35. 3635-3641 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Toshio Goto et al.: "Radical Behavior in Fluorocarbon Plasma and Control of Silicon Oxide Etching." Jpn.J.Appl.Phys.35. 6521-6527 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kunimasa Takahashi et al.: "Control and Qualification of Precursor in SiO_2 High Selective Etching Employing Radical Injection Technique." Proceedings of the 17th Symposium on Dry Process. 17. 237-242 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Masaru Hori et al.: "Etching Control and Clarification of Important Radical for Etching by Employing Radical Injection Technique." Proceedings of SEMI Technology Symposium. 95. 1-56-1-60 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Toshio Goto et al.: "Radical Behavior in Fluorocarbon Plasma and Control of Silicon Oxide Etching by Injection of Radicals" Proceedings of the 9th International Micro Process Conference. 9. 24-29 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Masaru Hori: "Gas Phase-Solid Phase Reaction of Radicals in Plasma Process." Study of Discharge. 151. 3-10 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Masaru Hori et al.: "Reactive Species Measurement in Dry Etching." Ultra Clean Technology. 8. 265-268 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Masaru Hori et al.: "Surface Reaction of CF_2 Radical in Fluorocarbon Plasma Etching Process." Proceedings of 189th Meeting of the Electrochemical Society. 189. 229 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Masaru Hori et al.: "Behaviors of Radicals in Silicon Oxide Etching Process." Proceedings of Electronic Journal 3rd Technical Symposium. 3. 99-106 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Masaru Hori et al.: "Surface Reaction of CF_2 Radical in Silicon Oxide Selective Etching Process." International Workshop on Basic Aspects of Nonequilibrium Plasmas Interacting with Surface. 1. 11-12 (1996)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-03-09  

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