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1997 Fiscal Year Final Research Report Summary

Bistable polarization in the visible/near-infrared semiconductor lasers by injection locking and their application to logic devices

Research Project

Project/Area Number 07650057
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied optics/Quantum optical engineering
Research InstitutionDoshisha University

Principal Investigator

OHTA Tatehisa  Doshisha University, Department of Electronics, Professor, 工学部・電子工学科, 教授 (40066246)

Project Period (FY) 1995 – 1997
KeywordsVisible LD / Infrared LD / Light injection locking / TE and TM modes / Mode hopping / Polarization switching / Bistable polarization / Optical logic device
Research Abstract

This study deals with the bistable polarization switching of semiconductor lasers whose normal and inverted output could be obtained simultaneously. This bistability is realized by utilizing a semiconductor laser with bistable mode-hopping characteristics (master laser) and injecting the TM polarization output of this laser into another semiconductor laser (slave laser) constantly biased to the oscillation threshold. It is proposed and confirmed by experiment using CSP-type semiconductor lasers oscillating a single mode at 830 nm that, by assuming these two lasers as one optical system, bistable polarization switching can be obtained between the injection current of the system and the output polarization system. First, as the principle of this polarization switching, the dependence of the injected light wavelength on amplification index of a semiconductor laser amplifier is explained. Then, the control of output polarization by TM wave injection and mode hopping of a laser is explained … More and the bistable characteristics of this optical system are discussed from experimental and simulation viwpoints based on these principles. The advantages of this bistable polarization switching are pointed out theoretically and experimentally, and the intensity difference of the ON/OFF output and the rotation direction of the bistable loop can be set according to the characteristics of the master and the slave lasers. The possibility of multislave connection is possible and an optical system that can control each gate function can be expected.
Moreover, the polarization characteristics of SAS-and VSIS-type semiconductor lasers injecting the TM wave are studied experimentally. The bistable polarization switching by mode-hopping was not found. Therefore the performance of the polarization switching in a semiconductor laser caused by injection locking depends on the waveguide structure. Bistable polarization switching mechanism in semiconductor lasers is discussed with the polarization switching in a 633 nm He-Ne laser with internal mirrors. Less

  • Research Products

    (14 results)

All Other

All Publications (14 results)

  • [Publications] 大野 誠司: "モードホッピングを利用したTM偏光波注入半導体レーザにおける双安定偏光スイッチング" 電子情報通信学会論文誌. J-79C. 81-90 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 大野 誠司: "光注入ロッキングを利用した半導体レーザの偏光スイッチングにおける導波構造の影響" 同志社大学理工学研究報告. 38. 9-20 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 久保田 宗親: "630nmMQW型半導体レーザにおける光注入効果" 電子情報通信学会総合大会論文集. エレクトロニクス1. (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Takehisa Ohta: "Optical polorization switching and bistability by injection light on a 633nm He-Ne Laser" CLEO / Europe'95,Technical Digest. 293 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Takehisa Ohta: "Optica. polorization switching in a 633nm He-Ne Laser caused by injection locking" CLEO / Europe'96,Technical Digest. 116 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 久保田 宗親: "外部光注入による633nm He-Neレーザの偏光スイッチング機構" 電子情報通信学会技術報告. LQE97. 19-24 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 大田 建久: "レーザ・量子エレクトロニクス 基礎と応用" 東洋技研, 378 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 大田 建久: "可視・近赤外半導体レーザの光注入による偏光双安定と論理素子への応用" 東洋技研, 82 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Ohno, M.Ichii, M.Mamiya, T.Ohta and T.Ichinose: ""Bistable Polarization Switching in Transverse Magnetic Wave-injected Semiconductor Lasers by Mode Hopping"" (Translated from Denshi Joho TsushinGakkai Ronbunshi, Vol.79-C-I,pp.81-90(1996).) Electronics and Communications in Japan. Vol.79. 1-11 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Ohno, M.Ichii, T.Ohta and T.Ichinose: ""Dependence of Waveguided Structure on Polarization Switching in Semiconductor Lasers Caused by Injection Locking"" The Science and Engineering Review of Doshisha University. Vol.38. 9-20 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Kubota, K.Nagase, T.Shimomura, T.Ohta and T.Ichinose: ""The injection light effect of a 630 nm MQW laser diode"" Proceedings of The 1998 IEICE General Conference. C-4-38. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Ohta, S.Ohno, Y.Atro, T.Ichinose: ""Optical polarization switching and bistability by injection light in a 633nm He-Ne laser"" CLEO/PACIFIC RIM Technical Digest. 79 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Ohta, K.Kubota, T.Ichii and T.Ichinose: ""Optical polarization switching in a 633nm He-Ne laser caused by injection locking"" CLEO/EUROPE 96, Technical Digest. CTuK55. (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Kubota, K.Koide, N.Nakano, T.Ohta and T.Ichinose: ""Polarization switching mechanisms in a 633-nm He-Ne laser caused by injection light"" Technical Report of IEICE. LQE97-147. (1998)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-03-16  

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