1996 Fiscal Year Final Research Report Summary
Study on the control of the fine structure in porous silicon
| Project/Area Number |
07650355
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | CHIBA UNIV |
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Principal Investigator |
OKAMOTO Hiroshi Faculty of Engineering, Chiba University Professor, 工学部, 教授 (90241934)
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| Co-Investigator(Kenkyū-buntansha) |
MATSUSUE Toshio Faculty of Engineering, Chiba University Lecturer, 工学部, 講師 (20209547)
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| Project Period (FY) |
1995 – 1996
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| Keywords | porous Si / visible emission / anodization / in situ PL observation |
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| Research Abstract |
Porous silicon is attractive because of its visible light emission. Its spectrum, however, is influenced by many unknown factors in the anodization process and the following oxidation process. In situ photoluminescence observation was tried by inserting an optical fiber into the anodization solution and the oxidation solution. Wavelength was short and spectrum was very narrow during the anodization, but after rinsing in the deionized water and then being exposed to the air, red shift and spectrum broadening occurred. Oxidization in HNO3 solution was found to be effective in minimizing both red shift and spectrum broadening.
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