1997 Fiscal Year Final Research Report Summary
InGaN CRYSTAL GROWTH ON Si SUBSTRATE BY ALTERNATING SOURCE SUPPLY MBE
| Project/Area Number |
07650363
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | FUKUI UNIVERSITY |
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Principal Investigator |
HASHIMOTO Akihiro FUKUI UNIVERSITY,ELECTRICAL AND ELECTRONICS ENGINEERING,ASSOCIATE PROFESSOR, 工学部・電子工学科, 助教授 (10251985)
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| Co-Investigator(Kenkyū-buntansha) |
OHKUBO Mitugu FUKUI UNIVERSITY,ELECTRICAL AND ELECTRONICS ENGINEERING,ASSISTANT, 工学部・電子工学科, 教務職員 (80260561)
YAMAMOTO Akio FUKUI UNIVERSITY,ELECTRICAL AND ELECTRONICS ENGINEERING,PROFESSOR, 工学部・電子工学科, 教授 (90210517)
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| Project Period (FY) |
1995 – 1997
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| Keywords | ALTERNATING SOURCE SUPPLY MBE / III-V NITRIDES / InGaN / Si / HIGHLY LATTICE MISMATCHED HETEROEPITAXY |
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| Research Abstract |
III-V nitrides crystal growth on Si substrates is very important issue not only from the fundamental views of the crystal growth processes but also from the device application views. Aim of the project is the investigation of the nitridation processes at the initial growth stage in III-V nitrides on Si substrates and their control by the alternating source supply method in the molecular beam epitaxy (MBE).
It has been found that the alternating source supply method using the trimethyl Ga (TMG) and the dimethyl-hydrazine (DMHy) is very effective to prevent from the nitridation of the Si substrates at the initial growth stages of GaN crystal growth. It has also made clear the elementary conversion processes from the III-As compound semiconductor to their derived III-Nitrides by the counter diffusion of As and N atoms. The InGaN/GaN quantum well structures and the GaN nono-column structures have been succesfully fabricated by the well-controlled nitridation procerss.
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