1997 Fiscal Year Final Research Report Summary
Epitaxial Growth and Applications of New Dissimilar Heterostructures
| Project/Area Number |
08044120
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| Research Category |
Grant-in-Aid for international Scientific Research
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| Allocation Type | Single-year Grants |
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| Section | Joint Research |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | The University of Tokyo |
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Principal Investigator |
TANAKA Masaaki Graduate School of Engineering, The University of Tokyo, Associate Professor, 大学院・工学系研究科, 助教授 (30192636)
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| Co-Investigator(Kenkyū-buntansha) |
DE BOECK Johan Interuniversity Microelectronics Center (IMEC), Senior Researcher and Group Lead, 間マイクロエレクトロニクスセンター, 主任研究員
PALMSTROM Chris Dept.of Chemical Engineering & Materials Science, University of Minnesota, Profe, 化学工学材料科学科, 教授
NISHINAGA Tatau Graduate School of Engineering, The University of Tokyo, Professor, 大学院・工学系研究科, 教授 (10023128)
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| Project Period (FY) |
1996 – 1997
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| Keywords | dissimilar heterostructures / MnGa / MnAs / ErAs / GaMnAs / molecular beam epitaxy (MBE) / ferromagnetic semiconductor / metal / semiconductor heterostructures |
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| Research Abstract |
We have performed international collaborations on "Epitaxial Growth and Applications of New Dissimilar Heterostructures". Recent progress of epitaxial growth technology has made it possible to prepare a variety of new artificial thin films and heterostructures (HS's) consisting of dissimilar materials. The dissimilar HSs include epitaxial ferromagnet/semiconductor HSs such as MnGa/GaAs, MnAs/GaAs, ferromagnetic-semiconductor (GaMnAs)/nonmagnetic-semiconductor (GaAs, AlAs), and semimetal (ErAs)/III-V (GaAs/AlAs). We have succcessfully grown these new artificial HSs by using molecular beam epitaxy (MBE), and revealed their structural, electronic, optical and magnetic properties. Some of the properties clarified by our research are found to be useful for some device applicatiopns, such as nagnetic nonvolitile memory, optical isolators coupled III-V semiconducror electronic/optical circuitry, as well as three terminal resonant tunneling devices and high speed metal-base transistors.
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