超薄膜超微細構造デバイスに関する研究

1996 Fiscal Year Annual Research Report

• Project/Area Number: 08044134
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: 小田 俊理 東京工業大学, 量子効果エレクトロニクス研究センター, 教授 (50126314)
• Co-Investigator(Kenkyū-buntansha): KASTNER Mark マサチューセッツ工科大学, 教授 ; MILNE Willia ケンブリッジ大学, 工学部, 教授 ; MOORE David ケンブリッジ大学, 工学部, 助教授 ; 伊藤 明 東京工業大学, 工学部, 助手 (30282833) ; 杉浦 修 東京工業大学, 工学部, 助教授 (10187643) ; 松村 正清 東京工業大学, 工学部, 教授 (30110729)
• Keywords: 超高速デバイス / 超伝導デバイス / 極微細加工プロセス / 電子ビーム露光技術 / 超薄膜結晶成長 / 量子効果デバイス / 原子層エピタキシ- / 薄膜トランジスタ

Research Abstract

1.プラズマ分解法により粒径10ナノメートル以下のシリコン量子ドットを作製した。シランプラズマ中に水素ガスパルスを導入することにより選択核形成を行い、均一粒径の量子ドットを得た。シリコン量子ドットに極薄シリコン酸化膜を形成する条件を見いだした。
2.電子ビーム露光法とECR反応性エッチング法により、微細ポリシリコン電極を形成した。微細電極間に堆積したシリコン量子ドットの電気特性を測定し、単電子トンネル現象を観測した。
3.原子層MOCVD法により酸化物超伝導超薄膜を形成し、種々の絶縁性酸化物とのヘテロ接合を形成した。超音波式MO原料モニターを開発して再現性のある超薄膜形成を可能にした。
4.超伝導超薄膜を利用した平面型電界効果デバイスを形成して電気特性を測定した。
5.走査プローブ顕微鏡を用いて酸化物超伝導の微細加工を行い、固有ジョセフソン効果に起因する異常電流特性を観測した。
Si/Ge電子層超格子をめざして、急峻かつ平坦なヘテロ界面を形成可能なSiおよびGeの原子層エピタキシ-について研究した。Siの原子層エピタキシ-はSiH2Cl2と原子状水素の交互供給によって実現した。そして、この成長機構にSiH2Cl2の気相反応が重要であることを実験的かつ理論的に示した。同様に(CH3)2GeH2と原子状水素を用いたGeの原子層エピタキシ-の成長機構を理論的に考察するとともに、Si表面にGeの原子層エピタキシ-を実現するために必須の技術となるSi表面へのGeの単原子層堆積法を提案し実証した。

Research Products

• [Publications] S.Oda: "Preparation of Nanocrystalline Silicon Quantum Dot Structure by Pulsed Plasma Processes" Adv.Colloid and Interface Sci.in press. (1997)
• [Publications] A.Dutta,M.Kimura,Y.Honda,M.Otobe A.Itoh and S.Oda: "Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing" Japanese Journal of Applied Physics. in press. (1997)
• [Publications] T.Ifuku,M.Otobe,A.Itoh and S.Oda: "Fabrication of Nanocrystalline Silicon with Small Spread of Praticle Size by Pulsed Gas Plasma" Japanese Journal of Applied Physics. in press. (1997)
• [Publications] A.Itoh,T.Ifuku,M.Otobe and S.Oda: "Grain-Size Contorol of Nanocrystalline Silicon by Pulsed Gas Plasma Process" Materials Research Society Symposium Proceedings. in press. (1997)
• [Publications] S.Suzuki and S.Oda: "Proposal of coplanar-type high-Tc superconducting field-effect devices" Physica C. in press. (1997)
• [Publications] Y.Kanemitsu,S.Okamoto,M.Otobe and S.Oda: "Photoluminescnce Mechanism in Surface-Oxidized Silicon Nanocrystals" Phys.Rev.B. in press. (1997)
• [Publications] 田部道春、小田俊理、平本俊郎、中里和郎、雨宮好仁: "単電子デバイス・回路の研究状況と今後の展望" 応用物理. 66. 99-108 (1997)
• [Publications] S.Yamamoto,A.Kawaguchi and S.Oda: "Anomalous Current-Voltage Characteristics along the c-Axis in YBaCuO Thin Films Prepared by MOCVD and AFM Lithography" Int.Symp.Intrinsic Josephson Effect and THz Plasma Oscillations in High Tc Superconductors. (1997)
• [Publications] S.Yamamoto,A.Kawaguchi,K.Nagata,T.Hattori and S.Oda: "Atomic layer-by-layer epitaxy ofoxide superconductors by MOCVD" Applied Surface Science. in press. (1996)
• [Publications] S.Yamamoto,T.Watanabe and S.Oda: "Junction Formation in YBaCuO Thin Films bu Scanning probe" J.Low.Temp.Phys. in press. (1996)
• [Publications] M.Otobe,J.Kawahara and S.Oda: "Preferential Nucleation of Nanocrystalline Silicon along Microsteps" Japanese Journal of Applied Physics. 35/2. 1325-1328 (1996)
• [Publications] M.Otobe,T.Kanai,T.Ifuku,H.Yajima and S.Oda: "Nanocrystalline silicon formation in a SiH4 Plasma cell" Journal of Non-Crystalline Solids. 198-200. 875-878 (1996)
• [Publications] S.Yamamoto,A.Kawaguchi and S.Oda: "Preparation of Thin Films of YBa2Cu3Ox with a Smooth Surface by Atomic Layer MOCVD" Mat.Sci.Eng.B. B41. 87-92 (1996)
• [Publications] S.Oda: "Fabrication of Silicon Quantum Dots by Plasma Processing" Cambridge-FED Workshop on Future Nano-scale Electron Devices. (1996)
• [Publications] S.Oda: "Atomic layer-by-layer MOCVD of thinfilms of Oxide superconductors" Int.workshop on Chemical Designing and Processing of High-Tc Superconductors II. (1996)
• [Publications] S.Oda,M.Kimura and M.Otobe: "Coulomb staircase characteristics in silicon quantum dots fabricated by plasma processing" Silicon Nanoelectronics Workshop. (1996)
• [Publications] S.Sugahara,T.Kitamura,S.Imai,and M.Matsumura: "Ideal monolayer adsorption of germanium on Si(100)surface" Appl.Surf.Sci. 107. 137-144 (1996)
• [Publications] S.Sugahara,E.Hasunuma,S.Imai,and M.Matsumura: "Modeling of Si atomic-layer-epitaxy" Appl.Surf.Sci.107. 161-171 (1996)
• [Publications] S.Sugahara,Y.Uchida,T.Kitamura,T.Nagai,M.Matsuyama,T.Hattori and M.Matsumura: "A proposed atomic-layer-deposition of germanium on Si surface" Jpn J.Appl.Phys.in press.
• [Publications] S.Sugahara and M.Matsumura: "Modeling of germanium atomic-layer-epitaxy" Appl.Surf.Sci. in press.
• [Publications] S.Morishita,S.Sugahara and M.Matsumura: "Atomic-layer chemical-vapor-deposition of silicon nitride" Appl.Surf.Sci.in press.
• [Publications] T.Haraguchi and O.Sugiura: "Low Temperature Flow of High-Water Containing Glasses Prepared by Chemical Vapor Deposition" Jpn.J.Appl.Phys. 35,10A. L1290-L1292 (1996)
• [Publications] 藤本明,杉浦修: "TICS/H2O系SiO2CVDの堆積モデル" 第50回半導体・集積回路シポジウム講演論文集. 124-129 (1996)
• [Publications] A.Fujimoto and O.Sugiura: "A Deposition mechanism of SiO2 CVD using Tetraisocyanate-silane and Water" 1997 MRS Spring Meeting. (1997)
• [Publications] D.F.Moore: "Recent trends in the fabrication of High-Tc films and devices" FED Journal 6. 47-56 (1996)
• [Publications] D.F.Moore,J.F.Walker and J.T.Whitney: "Focusedion beam processing for microscale fabrication" Microelectronic Engineering. 30. 517-522 (1996)
• [Publications] A.J.Pauza,W.E.Booij,D.F.Moore and Y.Yuan: "Electron beam damage Josephson junctions:the relation between beam damageprofile and electrical properties" Czechoslovak Journal of Physics. 46. 1325-6 (1996)
• [Publications] T.Kiriyama,N.Nakajima,S.Yoshimura,D.F.Moore,S.C.Burgess, and N.Shibaike: "A conceptual design environment for micromechanisms page" Proceedings of the European Design and Test Conference,IEEE. 1066-1409/96. 448-453 (1996)
• [Publications] A.J.Pauza,D.F.Moore: "Focusede Electron Beam Irradiation(FEBI)Josephson junctions" Proceedings.HTS-WORKSHOP on Digital Applications,Josephson Junctions and 3-Terminal Devices. (1996)
• [Publications] D.F.Moore,J.H.Daniel,S.C.Burgess,A.Nakayama,N.Shibaike and T.Kiriyama: "Silicon-on-insulator material for sensors and accelerometers" IEE Colloqium on Silicon Fabricated Intertial Instruments,London IEE 1996. 2279. 1-5 (1996)
• [Publications] M.Froggatt,W.I.Milne,J.Robertson and M.J.Powell: "Microcrystalline TFTs" Symposium A,MRS Spring Meeting. (1997)
• [Publications] M.M.M.Bilek and W.I.Milne: "FCVA produceds-SiH" Electronics Letters. 32,21. 2016 (1996)
• [Publications] M.M.M.Bilek and W.I.Milne: "Filtered cathodic vacuum arc deposition of thin film Si" Thin Solid Films. Dec. (1996)
• [Publications] M.M.M.Bilek and W.I.Milne: "Filtered cathodic vacuum arc deposition of amorphous silicon" MRS Spring Meeting. (1996)
• [Publications] M.M.M.Bilek,M.Chhowalla,M.Weiler and W.I.Milne: "Ion energy and plasma characterisation in a silicon filtered cathodic vacuum arc" Journal of Applied Physics. 79(3). (1996)
• [Publications] Y.Chen,F.J.Clough,S.Ekkanath Madathil and W.I.Milne: "High voltage polysilicon TFTS" MRS Spring Meeting. (1997)
• [Publications] Y.Chen,F.J.Clough,S.Ekkanath Madathil,W.I.Milne and W.Eccleston: "Novel polysilicon high voltage transistor" J.Electrochem Soc. in press. (1997)
• [Publications] W.I.Milne and J.Robertson: "Field emission from ta-C" MRS Spring Meeting. (1997)
• [Publications] J.Robertson and W.I.Milne: "Band model for emission from diamond and diamondlike carbon" MRS Spring Meeting. (1997)
• [Publications] Y.J.Lui,S.F.Yoon,J.Ahn and W.I.Milne: "Effect of H dilution on the deposition of carbon rich a-SiC:H produced from ECR" Mats Science and Engineering B-Solid State Matertials. 3. 188 (1996)
• [Publications] S.F.Yoon,A.Ji,J.Ahn and W.I.Milne: "The effect of microwave power on the deposition of boron depedSi-C:H using ECR" Thin Solid Films. 288,1-2. 155-159 (1996)
• [Publications] K.C.Park,J.H.Moon,S.J.Chung,M.H.Oh,W.I.Milne and J.Jang: "Electron emission from DLC deposited by using a layer by layer technique" Applied Physics Letters. in press. (1997)
• [Publications] K.Gilkes,H.S.Sands,D.N.Batchelder,J.Robertson and W.I.Milne: "Direct observation of sp3 bonding in ta-C using UV raman spectroscopy" Applied Physics Letters. in press. (1997)
• [Publications] S.Xu,D.Flynn,B.K.Tay,S.Prawer,K.W.Nugent,S.R.P.Silva,Y.Lifshitz and W.I.Milne: "The mechanical and raman properties of FCVA prepared ta-C Films with a high sp3 fraction" Phil Mag B. in press. (1997)
• [Publications] M.Chhowalla,J.Robertson,C.W.Chen,C.Davis,G.A.J.Amaratunga and W.I.Milne: "Properties of ta-C as a function of ion energy,growth rate and deposition temperature" Journal of Applied Physics. (1996)
• [Publications] M.M.M.Bilek,D.McKenzie,Y.Yin,M.Chhowalla and W.I.Milne: "Interactions of the directed plasma from a cathodic arc with electrodes and magnetic dusts" IEEE Trans on Plasma Sci.24,5. 1291 (1996)
• [Publications] J.S.Park and W.I.Milne: "Etching of ta-C films in an O2 plasma" Jap.Journal of Applied Physics,Part 2. 25,12A. L1550 (1996)
• [Publications] S.Xu,T.Y.Qiang,T.H.Siang,B.K.Tay and W.I.Milne: "Simulation of plasma flow in toroidal solenoid filters" IEEE Trans on Plasma Sci.24,6. 1309 (1996)
• [Publications] S.F.Yoon.R.Ji,J.Ahn and W.I.Milne: "The effect of process pressure and microwave power on the properties of boron dopeda-SiC:H films prepared using an ECR technique" Diamond and Related Materials. 5,11,. 1371-7 (1996)
• [Publications] S.R.P.Silva,S.Xu,B.K.Tay,H.S.Tan and W.I.Milne: "Nanocrystallites in ta-C films" Applied Physics Letters. 69(4). (1996)
• [Publications] K.C.Park,J.H.Moon,S.J.Chung,J.H.Jung,B.K.Ju,M.H.Oh,W.I.Milne,M.K.Han and J.Jang: "Field emission properties of N dopedta-C films" Journal of Vacuum Science and Technology. in press. (1997)
• [Publications] K.C.Park,J.H.Moon,S.K.Chung,M.H.Oh,W.I.Milne and J.Jang: "Relationship between field emission characteristics and hydrogen content in DLC deposited using a layer-by-layer technique" Journal of Vacuum Science and Technology. in press. (1997)
• [Publications] F.J.Clough,W.I.Milne,B.Kleinsorge,J,Robertson,G.A.J.Amaratunga and B.N.Roy: "Tetrahedrally bondedamorphous carbon(ta-C)thin film transistors" Electronics Letters. 498 (1996)
• [Publications] S.Xu,B.K.Tay,H.S.Tan,L.Zhong,Y.Tu,S.R.P.Silva and W.I.Milne: "Properties of carbon ion depositedtetrahedral amorphous carbon films as a function of ion energy" Journal of Applied Physics. 79,9. 7234 (1996)
• [Publications] S.R.P.Silva,S.Xu,B.K.Tay,H.S.Tan,H-J.Scheibe,M.Chhowalla and W.I.Milne: "The structure of ta-C" Thin Solid Films. Dec. (1996)
• [Publications] Y.J.Lui,S.F.Yoon,J.Ahn and W.I.Milne: "Effect of H dilution on deposition of C rich a-SiC:H films by ECR" Journal of Mat Sci,Part B,Solid State Mats for Adv.Tech.(1996)
• [Publications] S.F.Yoon,J.Rong,J.Ahn and W.I.Milne: "The effect of microwave power on the deposition of boron dopeda-SiC:H films" Thin Solid Films. in press. (1996)
• [Publications] S.F.Yoon,S.Miyajima and W.I.Milne: "Photo-CVD produced amorphous silicon carbide" Materials Science and Engineering B. in press. (1996)