1997 Fiscal Year Annual Research Report

超薄膜超微細構造デバイスに関する研究

Research Project

Project/Area Number	08044134
Research Institution	TOKYO INSTITUTE OF TECHNOLOGY
Principal Investigator	小田俊理東京工業大学, 量子効果エレクトロニクス研究センター, 教授 (50126314)
Co-Investigator(Kenkyū-buntansha)	KASTNER Marc マサチューセッツ工科大学, 教授 MILNE Willia ケンブリッジ大学, 工学部, 教授 MOORE David ケンブリッジ大学, 工学部, 助教授杉浦修東京工業大学, 工学部, 助教授 (10187643) 松村正清東京工業大学, 工学部, 教授 (30110729)
Keywords	超高速デバイス / 超伝導デバイス / 極微細加工プロセス / 電子ビーム露光技術 / 超薄膜結晶成長 / 量子効果デバイス / 原子層エピタキシ- / 薄膜トランジスタ
Research Abstract	1.プラズマプロセスにより粒径10ナノメートル以下のシリコン量子ドットを作製した。ガスパルス法による核形成・結晶成長分離のアイデアとプラズマ条件による結晶成長機構の解明により均一粒径の量子ドットを得た。シリコン量子ドットの極薄シリコン酸化膜を形成する条件を見いだした。 2.電子ビーム露光法とECR反応性エッチング法により、微細ポリシリコン電極を形成した。2段階露光法により10-20ナノメートルの微細電極を形成し、堆積したシリコン量子ドットの電気特性を測定したところ、単電子トンネル現象を観測した。 3.原子層MOCVD法により酸化物超伝導超薄膜を形成し、種々の絶縁性酸化物とのヘテロ接合を形成した。超音波式MO原料モニター法および分光エリプソメトリ法を開発して再現性ある超薄膜形成を可能にした。 4.超伝導接合と平面型電界効果デバイスを組み合わせて、電界変調効果の増大を観測した。 5.走査プローブ顕微鏡を用いて酸化物超伝導の微細加工を行い、固有ジョセフソン効果に起因する異常電流特性を観測した。 6.Si(100)面上へのSiの原子層成長(ALE)特性について詳細に調べて、気相での原料ガス(ジクロロシラン)同士の衝突分解反応によるSiHCIの生成が理想的な1ML/サイクルの成長速度を実現するための重要な条件であることを明かにした。

Research Products

(90 results)

All Other

All Publications (90 results)

[Publications] M.Otode, H.Yajima and S.Oda: "Observation of Single Electron Charging Effectin Nanocrystalline Silicon at Room Temperature Using Atomic Force Microscopy" Applied Physics Letters. 72(in press). (1998)
[Publications] S.Suzuki, H.Tobisaka and S.Oda: "Electric Properties of Coplanar High-Tc Superconducting Field Effect Devices" Japanese Journal of Applied Physics. 37(in press). (1998)
[Publications] Z.Wang and S.Oda: "Atomic Layer-by-Layer Metal-Organic Chemical Vapor Deposition of SrTiO3 Films with a Very smooth Surface" Japanese Journal of Applied Physics. 37(in press). (1998)
[Publications] S.V.Vyshenski, A.Ohata, S.Oda: "Active Probing of Single-Electron Effects in a Silicon Quantum Dot" Proceedings of The Fourth International Symposium on Quantum Effect Electronics. 45-50 (1997)
[Publications] S.Oda and A.Dutta: "Fabrication and Characterization of Silicon Quantum Dots" 3rd Int.Workshop on Quantum Functional Devices. 250-253 (1997)
[Publications] S.Yamamoto, A.Kawaguchi and S.Oda: "Anomalous Current-Voltage Characterisitics along the c-Axis in YBaCuO Thin Films Prepared by MOCVD and AFM Lithography" Physica C. 293. 244-248 (1997)
[Publications] S.Suzuki and S.Oda: "Fabrication of Coplanar-type High-Tc Superconducting Field-Effect Devices" 5th Int.Workshop on High-Temperature Superconducting Electron Devices. 199-201 (1997)
[Publications] S.Oda: "Fabrication of Silicon Quantum Dots by Pulsed-Gas Plasma Processes and Their Properties" Int.Symp.Nanostructures;Phys.Technol.281 (1997)
[Publications] A.Dutta, Y.Kinugasa, A.Itoh and S.Oda: "Fabrication and Electrical Properties of Silicon Nanocrystals" Silicon Nanoelectronics Workshop. 30-31 (1997)
[Publications] S.Oda: "Single Electron Tunneling in Silicon Quantum Dots Prepared by Plasma Processing" Symp.Solid State Physics. 15-16 (1997)
[Publications] S.Oda: "Growth Mechanism of YBCO thinfilms by MOCVD" Int.Workshop on Superconductivity. 39-42 (1997)
[Publications] S.Oda: "Single Electron Devices Based on Silicon Quantum Dots" 20th Electrical Engineering Conference. 19-26 (1997)
[Publications] S.Oda: "Preparation of Nanocrystalline Silicon Quantum Dot Structure by Pulsed Plasma Processes" Adv.Colloid and Interface Sci.31-47 (1997)
[Publications] A.Dutta, M.Kimura, Y.Honda, M.Otobe A.Itoh and S.Oda: "Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing" Japanese Journal of Applied Physics. 36. 4038-4041 (1997)
[Publications] T.Ifuku, M.Otobe, A.Itoh and S.Oda: "Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma" Japanese Journal of Applied Physics. 36. 4031-4034 (1997)
[Publications] A.Itoh, T.Ifuku, M.Otobe and S.Oda: "Grain-Size Control of Nanocrystalline Silicon by Pulsed Gas Plasma Process" Materials Research Society Symposium Proceedings. 452. 749-754 (1997)
[Publications] S.Suzuki and S.Oda: "Proposal of Coplanar-type High-Tc Superconducting Field-Effect Devices" Physica C. 282-287. 2495-2496 (1997)
[Publications] Y.Kanemitsu, S.Okamoto, M.Otobe and S.Oda: "Photoluminescnce Mechanism in Surface-Oxdized Silicon Nanocrystals" Phys.Rev.B. 55. R7375-R7378 (1997)
[Publications] S.Yamamoto, A.Kawaguchi, K.Nagata, T.Hattori and S.Oda: "Atomic layer-by-layer epitaxy of oxide superconductors by MOCVD" Applied Surface Science. 112. 30-37 (1997)
[Publications] S.Yamamoto, T.Watanabe and S.Oda: "Junction Formation in YBaCuO Thin Films bu Scanning Probe" J.Low.Temp.Phys. 106. 423-432 (1997)
[Publications] E.Hasumuma, S.Sugahara, S.Hoshino, S.Imai, K.Ikeda and M.Matsumura: "Gas-Phase-Reaction-Controlled Atomic-Layer-Epitaxy of Silicon" J.Vac.Science and Thecnology. (in press). (1998)
[Publications] Y.Uchida, K.Taguchi, T.Nagai and M.Matsumura: "Low-Temperature CVD of OH-Free and Low-k Organic-Sillica Films" Proc.DUMIC. (in press). (1998)
[Publications] K.Ikeda, S.Sugahara, Y.Uchida, T.Nagai and M.Matsumura: "Formation of An Atomically Abrupt Si/Ge Hetero-Interface" Japanese Journal of Applied Physics. (in press). (1998)
[Publications] K.Usami, S.Hayashi, Y.Uchida and M.Matsumura: "Liquid-Phase Deposition of Silicon-Dioxide Films using Tetra-Ethyl Orthosilicate" Japanese Journal of Applied Physics. (in press). (1998)
[Publications] K.W.Choi and M.Matsumura: "Poly-Si/Poly-SiCx Hetero-Junction Thin-Film Transistors" IEEE Transactions on Electron Devices. (in press). (1998)
[Publications] M.Matsumura and A.Saitoh: "Amorphous-Silicon Thin-Film Transistors Matched to Ultra-Large Panels" Materials Research Society Symposium Proceedings. (in press). (1997)
[Publications] K.Choi and M.Matsumura: "Crystallization and Evaluation of Non-Stoichiometric Silicon-Carbon Films for Hetero Thin-Film Transistors" Materials Research Society Symposium Proceedings. 452. 933-940 (1997)
[Publications] A.Saitoh and M.Matsumura: "Excimer-Laser-Produced Amorphous-Silicon Vertical Thin-Film Transistors" Japanese Journal of Applied Physics. 36-6. L668-L669 (1997)
[Publications] Y.Uchida, S.Takei and M.Matsumura: "Chemical Vapor Deposition of Hydrogen-Free Silicon-Dioxide Films" Japanese Journal of Applied Physics. 36-3. 1509-1512 (1997)
[Publications] K.Ikeda, S.Imai and M.Matsumura: "Atomic Layer Etching of Germanium" Applied Surface Science. 112. 87-91 (1997)
[Publications] Y.Uchida, S.Takei and M.Matsumura: "Stabilization of Hydrogen-Free CVD-SiO2 Films" Materials Research Society Symposium Proceedings. 446. 21-26 (1997)
[Publications] Y.Uchida, S.Takei and M.Matsumura: "Step-Coverage Characteristics of Silicon-Dioxide Films Formed by A New Low-Temperature Chemical-Vapor-Deposition Method" Japanese Journal of Applied Physics. 36-8. L993-995 (1997)
[Publications] R.Ishihara and M.Matsumura: "Excimer-Laser-Produced Single-Crystal Silicon Thin-Film Transistors" Japanese Journal of Applied Physics. 36-10. 6167-6170 (1997)
[Publications] S.Sugahara, Y.Uchida, T.Kitamura, T.Nagai, M.Matsuyama, T.Hattori and M.Matsumura: "A proposedatomic-layer-deposition of germaniumon Si surface" Japanese Journal of Applied Physics. 36-3. 1609-1613 (1997)
[Publications] S.Sugahara and M.Matsumura: "Modeling of germaniumatomic-layer-epitaxy" Applied Surface Science. 112. 176-186 (1997)
[Publications] S.Morishita, S.Sugahara and M.Matsumura: "Atomic-layer chemical-vapor-deposition of silicon nitride" Applied Surface Science. 112. 198-204 (1997)
[Publications] A.Fujimoto and O.Sugiura: "A Deposition mechanism of SiO2 CVD using Tetra-isocyanate-silane and Water" Materials Research Society Symposium Proceedings. (1997)
[Publications] D.F.Moore, J.H.Daniel and J.F.Walker: "Nano-and micro-technology applications of focusedion beam processing" Microelectronics Journal. 28. 465-473 (1997)
[Publications] S.C.Burgess, D.F.Moore, D.E.Newland and H.L.Klaubert: "A study of mechanical configuration optimisation in micro-systems" Research in Engineering Design. 9. 46-60 (1997)
[Publications] D.F.Moore, A.J.Pauza, M.G.Blamire and W.E.Booij: "Focused electron besmirradiation junctions for device applications" R & D Association for Future Electron Devices FED(invited paper). 107-110 (1997)
[Publications] W.E・Booij, A.J.Pauza, E.J.Tarte, D.F.Moore and M.G.Blamire: "Proximity coupling in High-TC Josephsonjuctions produced by focused electron beamirradiation" Physical Review B. 55. 14600-14609 (1997)
[Publications] D.F.Moore, A.J.Pauza, W.E.Booij and M.G.Blamire: "Alternative types of YBaCuO Josephson junctions" International Superconductive Electronics Conference ISEC′97,ext.abstr.(invited paper). J4. 11-13 (1997)
[Publications] M.G/Blamire, W.E.Booij, A.J.Pauza, E.J.Tarte and D.F.Moore: "Improvements in the properties of electron-beam damage YBaCuO junctions" IEEE Trans.Applied Superconductivity. 7. 2856-2859 (1997)
[Publications] D.F.Moore, A.J.Pauza, W.E.Booij, M.G.Blamire, K.Herrmann, F.Baudenbacher, T.Harnisch, J.F.Walker, N.Cade and D.Jedamzik: "Asymmetric YBaCuO interfer ometers and SQUIDs made with focused electron-beamirradiation junctions" IEEE Trans.Applied Superconductivity. 7. 2494-2497 (1997)
[Publications] W.E.Booij, A.J.Pauza, D.F.Moore, E.J.Tarte and M.G.Blamire: "Electrodynamics of closely coupled YBaCuO junctions" IEEE Trans.Applied Superconductivity. 7. 3025-3028 (1997)
[Publications] R.M.Bostock, J.E.Townsend, R.Jones, R-J.E.Jansen and D.F.Moore: "Low cost integrated photonic systems" LEOS′97,San Francisco,IEEE Lasers and Electro-Optics Society(invited Paper). 274-275 (1997)
[Publications] A.J.Pauza, W.E.Booij, K.Herrmann, D・F.Moore, M.G.Blamire, D.A.Rudman and L.R.Vale: "Electron beam damaged high temperature superconducter josephson junctions" Journal Applied Physics. 82. 5612-5632 (1997)
[Publications] J.H.Daniel, D.F.Moore, J.F.Walker and J.T.Whitney: "Focusedion beamsin microsystem fabrication" Microelectronic Engineering. 35. 431-434 (1997)
[Publications] K.Herrmann, A.J.Pauza, F.Baudenbacher, J.S.Santiso and D.F.Moore: "Electromigration effects in e-beam junctions" Physica C. 274. 306-316 (1997)
[Publications] S F Yoon, R Ji, J Ahn and W I Milne: "Some Effects of Boron and Phosphorus Doping on the Properties of SiC:Films Prepared Using ECRCVD" J.Vac.Sci.Tech.A15(1). (1997)
[Publications] M M M Bilek and W I Milne: "Silicon Deposited Using the FCVA" Thin Solid Films. (1997)
[Publications] F J Clough, E M Sankara Narayanan, Y Chen, W Eccleston and W I Milne: "A Polysilicon Thin Film Transistor Incorporating a Semi-Insulating Field Plate For High Voltage Circuitry on Glass" Applied Physics Letters. 71-13. 1777 (1997)
[Publications] F Udrea, W I Milne and P Hemment: "New High Voltage Device Structures in SOI Based Technology" Proc of SOI Electro Chemical Society Meeting,Paris,Sept. 355 (1997)
[Publications] F Udrea, APopescu and W I Milne: "A New LIGBT Structure Based on Partial Isolation SOI Technology" IEE Device Letters. 33-10. 907 (1997)
[Publications] J Evans and W I Milne: "A Simple approximation of The Transconductance of a Power MOSFET" Electronics Letters. in press (1997)
[Publications] J H Moon, S J Chung, W I Milne, M H Oh, J Jang: "Stability of Field Emission Current for hydrogen free DLC Prepared by Layer-by-Layer Technique" Proceedings of IVMC ‘97,Kyongju,Korea. 455 (1997)
[Publications] R Ji, S F Yoon, J Ahn and W I Milne: "Some effects of P doping in SiC:Films prepared by ECR-CVD" Materials Science and Engineering B-Solid State Materials for Advanced Technology. 148-3. 215 (1997)
[Publications] K Gilkes, H S Sands, D N Batchelder, J Robertson and W I Milne: "Quantitative Studies of Tetrahedral Bonding in Amorphous Carbon Films Using UV Raman Spectroscopy" Materials Research Society Symposium Proceedings. (1997)
[Publications] Alie, M Rattier, N Conway, B Kleinsorge, J Robertsonand W I Milne: "Photoconductivity of DLC" Materials Research Society Symposium Proceedings. (1997)
[Publications] W I Milne: "Field Emission fron ta-C as a Function of Surface Treatment and Contact Material" Materials Research Society Symposium Proceedings. (1997)
[Publications] N Morrison, W I Milne, J Robertson, M Weiler, I Hutchings, L M Brown: "High Rate Deposition of ta-C:H Using an ECWR Plasma Source" Materials Research Society Symposium Proceedings. (1997)
[Publications] S J Chung, J H Moon, K C Park, M H Oh, W I Milne and J Jang: "Stability of Electron Emission Current in Hydrogen Free DLC Deposited by PECVD" J.Appl.Physics. 82-8. 4047 (1997)
[Publications] M M M Bilek, M Chhowalla and W I Milne: "Influence of Researtive Gas on lon Energy Distributions in Filtered Cathodic Vacuum Arcs" Applied Physics Letters. 71-14. 2002 (1997)
[Publications] K Gilkes, H S Sands, D N Batchelder, J Robertson and W I Milne: "UV Raman Studies of ta-C" Diamond and Related Materials. (in press). (1997)
[Publications] N Conway, J Robertson and W I Milne: "Electronic Properties and Doping of taC:H" Diamond and Related Materials. (in press). (1997)
[Publications] K J Clay, S P Speakman, N Morrison and W I Milne: "Materials Properties and Tribological Performance of re-PECVD DLC Coatings" Diamond and Related Materials. (in press). (1997)
[Publications] B S Satyanarayanan, A Hart, W I Milne and J Robertson: "Field Emission from ta-C" Applied Physics Letters. 71-10. 1430-1432 (1997)
[Publications] W I Milne, J Robertson, B S Satyanarayan and A Hart: "Field Emission from ta-C" Materials Research Society Symposium Proceedings. (1997)
[Publications] VI Merkulov, J S Lannin, C H Munro, S A Asher, V S Veerasamy and W I Milne: "UV Studies of Tetrahedral Bonding in DLC" Phys Rev Lett. 78-25. 4869 (1997)
[Publications] K C Park, J H Moon, S J Chung, J Jang, M H Oh, and W I Milne: "Deposition of n-type DLC Using the Layer by Layer Technique and its Electron Emission by Using" Applied Physics Letters. 70-11. 1381 (1997)
[Publications] K Gilkes, H S Sands, D N Batchelder, J Robertson and W I Milne: "Direct Observation of sp3 Bonding in ta-C using UV Raman Spectroscopy" Applied Physics Letters. 70-15. 1980 (1997)
[Publications] S R P Silva, S Xu, B K Tay, H S Tan, H J Scheibe, M Chhowalla and W I Milne: "The Structure and Morphology of ta-C Films" Thin Solid Folms. 291. 317 (1997)
[Publications] S Xu, D Flynn, B K Tay, S Prawer, K W Nugent, S R P Siva, Y Lifshitz and W I Milne: "The Mechanical and Raman Properties of FCVA Prepared ta-C Films with a High sp3 Fraction" Phil Mag B. 76-3. 351-361 (1997)
[Publications] G Fusco, A Tagliaferro, J Robertson and W I Milne: "Paramagnetic Centres in ta-C" Diamond and Related Materials. 16No5-7. 783 et seq. (1997)
[Publications] S F Yoon, R Ji, J Ahn, and W I Milne: "A Raman and Photoconductivity Analysis of Boron Dopeda-SiC:H Films Deposited Using the ECR Plasma CVD Method" J.of Mats Science. 32-5. (1997)
[Publications] K C Parke, J H Moon, S K Chung, M H Oh, W I Milne and J Jang: "Relationship Between Field Emission Characteristics and Hydrogen Contentin DLC Deposited Using a Layer-by-Layer Technique" Journal of Vacuum Science and Tech.B. 15-2. 428 (1997)
[Publications] J Robertson and W I Milne: "Band Model for Emission from Diamond Like Carbon" J.Non Xtalline Solids. (in press). (1998)
[Publications] W I Milne and J Robertson: "Field Emission in DLC" J.of the Korean Physical Society. 30,No Ssp. S182 (1997)
[Publications] Manish, Chhowalla, J Robertson, C W Chen, S R P Silva, C Davis, G A J Amaratunga and W I Milne: "Props of ts-C as a Function of lon Energy,Growth Rae and Deposition Temperature" Journal of Applied Physics. 81-1. 139 (1997)
[Publications] S Egret, M P Smith, J Robertson, W I Milne and F J Clough: "DLC MSMs for AMLCD Displays" Diamond and Related Materials. 6,No5-7. 879 et seq. (1997)
[Publications] M.Froggatt, W.I.Milne, J.Robertson and M.J.Powell: "Microcrystalline TFTs" Materials Research Society Symposium Proceedings. (1997)
[Publications] Y.Chen, F.J.Clough, S.Ekkanath Madathil and W.I.Milne: "High voltage polysilicon TFTs" Materials Research Society Symposium Proceedings. (1997)
[Publications] Y.Chen, F.J.Clough, S.Ekkanath Madathil, W.I.Milne and W.Eccleston: "Novel polysilicon high voltage transistor" J.Electrochem Soc. (in press). (1997)
[Publications] W.I.Milne and J.Robertson: "Field emission from ta-C" Materials Research Society Symposium Proceedings. (1997)
[Publications] J.Robertson and W.I.Milne: "Band model for emission from diamond and diamond like carbon" Materials Research Society Symposium Proceedings. (1997)
[Publications] K.C.Park, J.H.Moon, S.J.Chung, M.H.Oh, W.I.Milne and J.Jang: "Electron emission from DLC deposited by using a layer by layer technique" Applied Physics Letters. (in press). (1997)
[Publications] K.Gilkes, H.S.Sands, D.N.Batchelder, J.Robertson and W.I.Milne: "Direct observation of sp3 bonding ta-C using UV raman spectroscopy" Applied Physics Letters. (in press). (1997)
[Publications] S.Xu, D.Flynn, B.K.Tay, S.Prawer, K.W・Nugent, S.R.P.Silva, Y.Lifshitz and W.I.Milne: "The mechanical and raman properties of FCV Aprepared ta-C Films with a high sp3 fraction" Phil.Mag B. (in press). (1997)
[Publications] K.C/Park, J.H.Moon, S.J.Chung, J.H.Jung, B.K.Ju, M.H.Oh, W.I.Milne, M.K.Han and J.Jang: "Field emission properties of N doped ta-C films" Jounal of Vacuum Science and Technology. (in press). (1997)
[Publications] K.C.Park, J.H.Moon, S.K.Chung, M.H.Oh, W.I.Milne and J.Jang: "Relationship between field emission characteristics and hydrogen contentin DLC deposited using a layer-by-layer technique" Jounal of Vacuum Science and Technology. (in press). (1997)

1997 Fiscal Year Annual Research Report

超薄膜超微細構造デバイスに関する研究

Principal Investigator

小田 俊理 東京工業大学, 量子効果エレクトロニクス研究センター, 教授 (50126314)

Research Products

[Publications] M.Otode, H.Yajima and S.Oda: "Observation of Single Electron Charging Effectin Nanocrystalline Silicon at Room Temperature Using Atomic Force Microscopy" Applied Physics Letters. 72(in press). (1998)

[Publications] S.Suzuki, H.Tobisaka and S.Oda: "Electric Properties of Coplanar High-Tc Superconducting Field Effect Devices" Japanese Journal of Applied Physics. 37(in press). (1998)

[Publications] Z.Wang and S.Oda: "Atomic Layer-by-Layer Metal-Organic Chemical Vapor Deposition of SrTiO3 Films with a Very smooth Surface" Japanese Journal of Applied Physics. 37(in press). (1998)

[Publications] S.V.Vyshenski, A.Ohata, S.Oda: "Active Probing of Single-Electron Effects in a Silicon Quantum Dot" Proceedings of The Fourth International Symposium on Quantum Effect Electronics. 45-50 (1997)

[Publications] S.Oda and A.Dutta: "Fabrication and Characterization of Silicon Quantum Dots" 3rd Int.Workshop on Quantum Functional Devices. 250-253 (1997)

[Publications] S.Yamamoto, A.Kawaguchi and S.Oda: "Anomalous Current-Voltage Characterisitics along the c-Axis in YBaCuO Thin Films Prepared by MOCVD and AFM Lithography" Physica C. 293. 244-248 (1997)

[Publications] S.Suzuki and S.Oda: "Fabrication of Coplanar-type High-Tc Superconducting Field-Effect Devices" 5th Int.Workshop on High-Temperature Superconducting Electron Devices. 199-201 (1997)

[Publications] S.Oda: "Fabrication of Silicon Quantum Dots by Pulsed-Gas Plasma Processes and Their Properties" Int.Symp.Nanostructures;Phys.Technol.281 (1997)

[Publications] A.Dutta, Y.Kinugasa, A.Itoh and S.Oda: "Fabrication and Electrical Properties of Silicon Nanocrystals" Silicon Nanoelectronics Workshop. 30-31 (1997)

[Publications] S.Oda: "Single Electron Tunneling in Silicon Quantum Dots Prepared by Plasma Processing" Symp.Solid State Physics. 15-16 (1997)

[Publications] S.Oda: "Growth Mechanism of YBCO thinfilms by MOCVD" Int.Workshop on Superconductivity. 39-42 (1997)

[Publications] S.Oda: "Single Electron Devices Based on Silicon Quantum Dots" 20th Electrical Engineering Conference. 19-26 (1997)

[Publications] S.Oda: "Preparation of Nanocrystalline Silicon Quantum Dot Structure by Pulsed Plasma Processes" Adv.Colloid and Interface Sci.31-47 (1997)

[Publications] A.Dutta, M.Kimura, Y.Honda, M.Otobe A.Itoh and S.Oda: "Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing" Japanese Journal of Applied Physics. 36. 4038-4041 (1997)

[Publications] T.Ifuku, M.Otobe, A.Itoh and S.Oda: "Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma" Japanese Journal of Applied Physics. 36. 4031-4034 (1997)

[Publications] A.Itoh, T.Ifuku, M.Otobe and S.Oda: "Grain-Size Control of Nanocrystalline Silicon by Pulsed Gas Plasma Process" Materials Research Society Symposium Proceedings. 452. 749-754 (1997)

[Publications] S.Suzuki and S.Oda: "Proposal of Coplanar-type High-Tc Superconducting Field-Effect Devices" Physica C. 282-287. 2495-2496 (1997)

[Publications] Y.Kanemitsu, S.Okamoto, M.Otobe and S.Oda: "Photoluminescnce Mechanism in Surface-Oxdized Silicon Nanocrystals" Phys.Rev.B. 55. R7375-R7378 (1997)

[Publications] S.Yamamoto, A.Kawaguchi, K.Nagata, T.Hattori and S.Oda: "Atomic layer-by-layer epitaxy of oxide superconductors by MOCVD" Applied Surface Science. 112. 30-37 (1997)

[Publications] S.Yamamoto, T.Watanabe and S.Oda: "Junction Formation in YBaCuO Thin Films bu Scanning Probe" J.Low.Temp.Phys. 106. 423-432 (1997)

[Publications] E.Hasumuma, S.Sugahara, S.Hoshino, S.Imai, K.Ikeda and M.Matsumura: "Gas-Phase-Reaction-Controlled Atomic-Layer-Epitaxy of Silicon" J.Vac.Science and Thecnology. (in press). (1998)

[Publications] Y.Uchida, K.Taguchi, T.Nagai and M.Matsumura: "Low-Temperature CVD of OH-Free and Low-k Organic-Sillica Films" Proc.DUMIC. (in press). (1998)

[Publications] K.Ikeda, S.Sugahara, Y.Uchida, T.Nagai and M.Matsumura: "Formation of An Atomically Abrupt Si/Ge Hetero-Interface" Japanese Journal of Applied Physics. (in press). (1998)

[Publications] K.Usami, S.Hayashi, Y.Uchida and M.Matsumura: "Liquid-Phase Deposition of Silicon-Dioxide Films using Tetra-Ethyl Orthosilicate" Japanese Journal of Applied Physics. (in press). (1998)

[Publications] K.W.Choi and M.Matsumura: "Poly-Si/Poly-SiCx Hetero-Junction Thin-Film Transistors" IEEE Transactions on Electron Devices. (in press). (1998)

[Publications] M.Matsumura and A.Saitoh: "Amorphous-Silicon Thin-Film Transistors Matched to Ultra-Large Panels" Materials Research Society Symposium Proceedings. (in press). (1997)

[Publications] K.Choi and M.Matsumura: "Crystallization and Evaluation of Non-Stoichiometric Silicon-Carbon Films for Hetero Thin-Film Transistors" Materials Research Society Symposium Proceedings. 452. 933-940 (1997)

[Publications] A.Saitoh and M.Matsumura: "Excimer-Laser-Produced Amorphous-Silicon Vertical Thin-Film Transistors" Japanese Journal of Applied Physics. 36-6. L668-L669 (1997)

[Publications] Y.Uchida, S.Takei and M.Matsumura: "Chemical Vapor Deposition of Hydrogen-Free Silicon-Dioxide Films" Japanese Journal of Applied Physics. 36-3. 1509-1512 (1997)

[Publications] K.Ikeda, S.Imai and M.Matsumura: "Atomic Layer Etching of Germanium" Applied Surface Science. 112. 87-91 (1997)

[Publications] Y.Uchida, S.Takei and M.Matsumura: "Stabilization of Hydrogen-Free CVD-SiO2 Films" Materials Research Society Symposium Proceedings. 446. 21-26 (1997)

[Publications] Y.Uchida, S.Takei and M.Matsumura: "Step-Coverage Characteristics of Silicon-Dioxide Films Formed by A New Low-Temperature Chemical-Vapor-Deposition Method" Japanese Journal of Applied Physics. 36-8. L993-995 (1997)

[Publications] R.Ishihara and M.Matsumura: "Excimer-Laser-Produced Single-Crystal Silicon Thin-Film Transistors" Japanese Journal of Applied Physics. 36-10. 6167-6170 (1997)

[Publications] S.Sugahara, Y.Uchida, T.Kitamura, T.Nagai, M.Matsuyama, T.Hattori and M.Matsumura: "A proposedatomic-layer-deposition of germaniumon Si surface" Japanese Journal of Applied Physics. 36-3. 1609-1613 (1997)

[Publications] S.Sugahara and M.Matsumura: "Modeling of germaniumatomic-layer-epitaxy" Applied Surface Science. 112. 176-186 (1997)

[Publications] S.Morishita, S.Sugahara and M.Matsumura: "Atomic-layer chemical-vapor-deposition of silicon nitride" Applied Surface Science. 112. 198-204 (1997)

[Publications] A.Fujimoto and O.Sugiura: "A Deposition mechanism of SiO2 CVD using Tetra-isocyanate-silane and Water" Materials Research Society Symposium Proceedings. (1997)

[Publications] D.F.Moore, J.H.Daniel and J.F.Walker: "Nano-and micro-technology applications of focusedion beam processing" Microelectronics Journal. 28. 465-473 (1997)

[Publications] S.C.Burgess, D.F.Moore, D.E.Newland and H.L.Klaubert: "A study of mechanical configuration optimisation in micro-systems" Research in Engineering Design. 9. 46-60 (1997)

[Publications] D.F.Moore, A.J.Pauza, M.G.Blamire and W.E.Booij: "Focused electron besmirradiation junctions for device applications" R & D Association for Future Electron Devices FED(invited paper). 107-110 (1997)

[Publications] W.E・Booij, A.J.Pauza, E.J.Tarte, D.F.Moore and M.G.Blamire: "Proximity coupling in High-TC Josephsonjuctions produced by focused electron beamirradiation" Physical Review B. 55. 14600-14609 (1997)

[Publications] D.F.Moore, A.J.Pauza, W.E.Booij and M.G.Blamire: "Alternative types of YBaCuO Josephson junctions" International Superconductive Electronics Conference ISEC′97,ext.abstr.(invited paper). J4. 11-13 (1997)

[Publications] M.G/Blamire, W.E.Booij, A.J.Pauza, E.J.Tarte and D.F.Moore: "Improvements in the properties of electron-beam damage YBaCuO junctions" IEEE Trans.Applied Superconductivity. 7. 2856-2859 (1997)

[Publications] D.F.Moore, A.J.Pauza, W.E.Booij, M.G.Blamire, K.Herrmann, F.Baudenbacher, T.Harnisch, J.F.Walker, N.Cade and D.Jedamzik: "Asymmetric YBaCuO interfer ometers and SQUIDs made with focused electron-beamirradiation junctions" IEEE Trans.Applied Superconductivity. 7. 2494-2497 (1997)

[Publications] W.E.Booij, A.J.Pauza, D.F.Moore, E.J.Tarte and M.G.Blamire: "Electrodynamics of closely coupled YBaCuO junctions" IEEE Trans.Applied Superconductivity. 7. 3025-3028 (1997)

[Publications] R.M.Bostock, J.E.Townsend, R.Jones, R-J.E.Jansen and D.F.Moore: "Low cost integrated photonic systems" LEOS′97,San Francisco,IEEE Lasers and Electro-Optics Society(invited Paper). 274-275 (1997)

[Publications] A.J.Pauza, W.E.Booij, K.Herrmann, D・F.Moore, M.G.Blamire, D.A.Rudman and L.R.Vale: "Electron beam damaged high temperature superconducter josephson junctions" Journal Applied Physics. 82. 5612-5632 (1997)

[Publications] J.H.Daniel, D.F.Moore, J.F.Walker and J.T.Whitney: "Focusedion beamsin microsystem fabrication" Microelectronic Engineering. 35. 431-434 (1997)

[Publications] K.Herrmann, A.J.Pauza, F.Baudenbacher, J.S.Santiso and D.F.Moore: "Electromigration effects in e-beam junctions" Physica C. 274. 306-316 (1997)

[Publications] S F Yoon, R Ji, J Ahn and W I Milne: "Some Effects of Boron and Phosphorus Doping on the Properties of SiC:Films Prepared Using ECRCVD" J.Vac.Sci.Tech.A15(1). (1997)

[Publications] M M M Bilek and W I Milne: "Silicon Deposited Using the FCVA" Thin Solid Films. (1997)

[Publications] F J Clough, E M Sankara Narayanan, Y Chen, W Eccleston and W I Milne: "A Polysilicon Thin Film Transistor Incorporating a Semi-Insulating Field Plate For High Voltage Circuitry on Glass" Applied Physics Letters. 71-13. 1777 (1997)

[Publications] F Udrea, W I Milne and P Hemment: "New High Voltage Device Structures in SOI Based Technology" Proc of SOI Electro Chemical Society Meeting,Paris,Sept. 355 (1997)

[Publications] F Udrea, APopescu and W I Milne: "A New LIGBT Structure Based on Partial Isolation SOI Technology" IEE Device Letters. 33-10. 907 (1997)

[Publications] J Evans and W I Milne: "A Simple approximation of The Transconductance of a Power MOSFET" Electronics Letters. in press (1997)

[Publications] J H Moon, S J Chung, W I Milne, M H Oh, J Jang: "Stability of Field Emission Current for hydrogen free DLC Prepared by Layer-by-Layer Technique" Proceedings of IVMC ‘97,Kyongju,Korea. 455 (1997)

[Publications] R Ji, S F Yoon, J Ahn and W I Milne: "Some effects of P doping in SiC:Films prepared by ECR-CVD" Materials Science and Engineering B-Solid State Materials for Advanced Technology. 148-3. 215 (1997)

[Publications] K Gilkes, H S Sands, D N Batchelder, J Robertson and W I Milne: "Quantitative Studies of Tetrahedral Bonding in Amorphous Carbon Films Using UV Raman Spectroscopy" Materials Research Society Symposium Proceedings. (1997)

[Publications] Alie, M Rattier, N Conway, B Kleinsorge, J Robertsonand W I Milne: "Photoconductivity of DLC" Materials Research Society Symposium Proceedings. (1997)

[Publications] W I Milne: "Field Emission fron ta-C as a Function of Surface Treatment and Contact Material" Materials Research Society Symposium Proceedings. (1997)

[Publications] N Morrison, W I Milne, J Robertson, M Weiler, I Hutchings, L M Brown: "High Rate Deposition of ta-C:H Using an ECWR Plasma Source" Materials Research Society Symposium Proceedings. (1997)

[Publications] S J Chung, J H Moon, K C Park, M H Oh, W I Milne and J Jang: "Stability of Electron Emission Current in Hydrogen Free DLC Deposited by PECVD" J.Appl.Physics. 82-8. 4047 (1997)

[Publications] M M M Bilek, M Chhowalla and W I Milne: "Influence of Researtive Gas on lon Energy Distributions in Filtered Cathodic Vacuum Arcs" Applied Physics Letters. 71-14. 2002 (1997)

[Publications] K Gilkes, H S Sands, D N Batchelder, J Robertson and W I Milne: "UV Raman Studies of ta-C" Diamond and Related Materials. (in press). (1997)

[Publications] N Conway, J Robertson and W I Milne: "Electronic Properties and Doping of taC:H" Diamond and Related Materials. (in press). (1997)

[Publications] K J Clay, S P Speakman, N Morrison and W I Milne: "Materials Properties and Tribological Performance of re-PECVD DLC Coatings" Diamond and Related Materials. (in press). (1997)

[Publications] B S Satyanarayanan, A Hart, W I Milne and J Robertson: "Field Emission from ta-C" Applied Physics Letters. 71-10. 1430-1432 (1997)

[Publications] W I Milne, J Robertson, B S Satyanarayan and A Hart: "Field Emission from ta-C" Materials Research Society Symposium Proceedings. (1997)

[Publications] VI Merkulov, J S Lannin, C H Munro, S A Asher, V S Veerasamy and W I Milne: "UV Studies of Tetrahedral Bonding in DLC" Phys Rev Lett. 78-25. 4869 (1997)

[Publications] K C Park, J H Moon, S J Chung, J Jang, M H Oh, and W I Milne: "Deposition of n-type DLC Using the Layer by Layer Technique and its Electron Emission by Using" Applied Physics Letters. 70-11. 1381 (1997)

[Publications] K Gilkes, H S Sands, D N Batchelder, J Robertson and W I Milne: "Direct Observation of sp3 Bonding in ta-C using UV Raman Spectroscopy" Applied Physics Letters. 70-15. 1980 (1997)

[Publications] S R P Silva, S Xu, B K Tay, H S Tan, H J Scheibe, M Chhowalla and W I Milne: "The Structure and Morphology of ta-C Films" Thin Solid Folms. 291. 317 (1997)

[Publications] S Xu, D Flynn, B K Tay, S Prawer, K W Nugent, S R P Siva, Y Lifshitz and W I Milne: "The Mechanical and Raman Properties of FCVA Prepared ta-C Films with a High sp3 Fraction" Phil Mag B. 76-3. 351-361 (1997)

[Publications] G Fusco, A Tagliaferro, J Robertson and W I Milne: "Paramagnetic Centres in ta-C" Diamond and Related Materials. 16No5-7. 783 et seq. (1997)

[Publications] S F Yoon, R Ji, J Ahn, and W I Milne: "A Raman and Photoconductivity Analysis of Boron Dopeda-SiC:H Films Deposited Using the ECR Plasma CVD Method" J.of Mats Science. 32-5. (1997)

小田俊理東京工業大学, 量子効果エレクトロニクス研究センター, 教授 (50126314)