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1997 Fiscal Year Final Research Report Summary

STUDY OF ULTRA-THIN-FILM/ULTRA-FINE-STRUCTURE DEVEICES

Research Project

Project/Area Number 08044134
Research Category

Grant-in-Aid for international Scientific Research

Allocation TypeSingle-year Grants
SectionJoint Research
Research Field Applied materials science/Crystal engineering
Research InstitutionTOKYO INSTITUTE OF TECHNOLOGY

Principal Investigator

ODA Shunri  TOKYO INSTITUTE OF TECHNOLOGY : PROFESSOR, 量子効果エレクトロニクス研究センター, 教授 (50126314)

Co-Investigator(Kenkyū-buntansha) KASTNER Marc  MASSACHUSETTS INSTITUTE OF TECHNOLOGY : PROFESSOR, 教授
MILNE William  UNIVERSITY OF CAMBRIDGE : PROFESSOR, 工学部, 教授
MOORE David  UNIVERSITY OF CAMBRIDGE : ASSOC.PROFESSOR, 工学部, 助教授
SUGIURA Osamu  TOKYO INSTITUTE OF TECHNOLOGY : ASSOC.PROFESSOR, 工学部, 助教授 (10187643)
MATSUMURA Masakiyo  TOKYO INSTITUTE OF TECHNOLOGY : PROFESSOR, 工学部, 教授 (30110729)
Project Period (FY) 1996 – 1997
KeywordsUltrahigh Speed Devices / Superconducting DEvices / Nanofabrications / Electron Beam Lighography / Ultrathinfilm Crystal Growth / Quantum Effect Devices / Atomic Layr Epitaxy / Thinfilm Transistors
Research Abstract

1.Silicon quantum dots with size less than 10nm were prepared by plasma processes. Uniform dot size was obtained based on the idea of the separation of nucleation and crystal growth using pulsed gas methods and understanding of the crystal growth mechanisms. Oxidation of nanocrystalline silicon was also investigated.
2.Ultrasmall-gap polisilicon electrodes were fabricated by electron beam lithography and electron cyclotron resonance plasma reactive ion etching methods. 10-20nm gap electrodes were successfully prepared by the two-step exposere method. Single electron transport characteristics were observed in samples with deposited nanocrystalline silicon.
3.Ultrathin films of oxide superconductors and insulator heterostructures were prepared by the atomic layr metalorganic chemical vapor deposition method. Reproducibility of thinfilms gabrication was enhanced by using in situ monitoring based on ultrasonic transducers and spectroscopic ellisonetry.
4.Superconducting field effect was enhanced by the combination of Josephson junctions and planar type devices.
5.Anomolous current voltage characteristics due to intrinsic Josephson junctions were observed in YBCO thinfilm deveices fabricated by scanning probe microscopy lithography.
6.Atomic layr epitaxy of silicon on Si (100) was investigated. Self-limiting growth conditions were clarified on the basis of formation of SiHCl due to reaction in the gas phase.

  • Research Products

    (193 results)

All Other

All Publications (193 results)

  • [Publications] M.Otobe,H.Yajima and S.Oda: "Observation of Single Electron Charging Effect in Nanocrystalline Silicon at Room Temparature Using Atomic Force Microscopy" Applied Physics Letters. 72(in press). (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Suzuki, H.Tobisaka and S.Oda: ""","Electric Properties of Coplamar High-Tc Superconducting Field^Effect Devices" Japanese Journal of Applied Physics. 37(in press). (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Z.Wang and S.Oda: "Atomic Layer-by-Layer Metal-Organic Chemical Vapor Deposition of SrTiO3 Films with a Very smooth Surface" Japanese Journal of Applied Physics. 37(in press). (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.V.Vyshenski, A.Ohata, Y.Kinugasa, Y.Hayafune, S.Hara, S-P.Lee, K.Nishiguchi, A.Dutta and S.Oda: "Active Probing of Single-Electron Effects in a Silicon Quantum Dot" Proceedings of The Fourth International Symposium on Quantum Effect Electronics. 45-50 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Oda and A.Dutta: "Fabrication and Characterization Silicon Quantum Dots" 3rd Int.Workshop on Quantum Functional Devices. 250-253 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Yamamoto, A.Kawaguchi and S.Oda: "Anomalous Current-Voltage Characteristics along the c-Axis in YBaCuO Thin Films Prepared by MOCVD and AFM Lithography" Physica C. 293. 244-248 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Suzuki and S.Oda: "Fabrication of Coplanar-type High-Tc Superconducting Field-Effect Devices" 5th Int.Workshop on High-Temparature Superconducting Electron Devices. 199-201 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Oda: "Fabrication of Silicon Quantum Dots by Pulsed-Gas Plasma Processes and Their Properties" Int.Symp.Nanostructuree;Phys.Technol.281 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Dutta, Y.Kinugasa, A.Itoh and S.Oda: "Fabrication and Electrical Properties of Silicon Nenocrystals" Silicon Nanoelectronics Workshop. 30-31 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Oda: "Single Electron Tunneling in Silicon Quantum Dots Prepared by Plasma Processing" Symp.Solid State Physics. 15-16 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Oda: "Growth Mechanism of YBCO thinfilms by MOVCD" Int.Workshop on Superconductivity. 39-42 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Oda: "Single Electron Devices Based on Silicon Quantum Dots" 20th Electrical Engineering Conference. 19-26 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Oda: "Preparation of Nanocrystalline Silicon Quantum Dot Structure by Pulsed Plasma Processes" Adv.Colloid and Interface Sci.31-47 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Dutta, M.Kimura, Y.Honda, M.Otobe, A,Itoh and S.Oda: "Fabrication and Electrical Charcteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing" Japanese Journal of Applied Physics. 36. 4038-4041 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Ifuku, M.Otobe, A.Itoh and S.Oda: "Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma" Japanese Journal of Applied Physics. 36. 4031-4034 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Itoh, T.Ifuku, M.Otobe and S.Oda: "Grain-Size Control of Nanocrystalline Silicon by Pulsed Gas Plasma Process" Materials Research Society Symposium Proceedings. 452. 749-754 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Suzuki and S.Oda: "Proposal of Coplanar-type High-Tc Superconducting Field-Effect Devices" Physica C. 282-287. 2495-2496 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Kanemitsu, S.Okamoto, M.Otobe and S.Oda: "Photoluminescnce Mechanism in Surface-Oxidized Silicon Nanocrystals" Phys.Rev.B. 55. R7375-R7378 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 田部 道晴, 小田 俊理, 平本 俊郎, 中里 和郎, 雨宮 好仁: "単電子デバイス・回路の研究状況と今後の展望" 応用物理. 66. 99-108 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Yamamoto, A.Kawaguchi, K.Nagata, T.Hattori and S.Oda: "Atomiclayer-by-layer epitaxy of oxide superconductors by MOCVD" Applied Surface Science. 112. 30-37 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Yamamoto, T.Watanabe and S.Oda: "Junction Formation in YBaCuO Thin Films bu Scanning Probe" J.Low.Temp.Phys. 106. 423-432 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Otobe, J.Kawahara and S.Oda: "preferental Nucleation of Nanocrystalline Silicon along Microsteps" Japanese Journal of Applied Physics. 35/2. 1325-1328 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Otobe, T.Kanai, T.Ifuku, H.Yajima and S.Oda: "Nanocrystalline silicon formation in a SiH4 plasma cell" Journal of Non-Crystalline Solids. 198-200. 875-878 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Yamamoto, A.Kawaguchi and S.Oda: "Preparation of Thin Films of YBa2Cu30x with a Smooth Surface by Atomic Layer MOCVD" Mat.Sci.Eng.B. B41. 87-92 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Oda: "Fabrication of Silicon Quantum Dots by Plasma Processing" Cambridge-FED Workshop on Future Nano-scale Electron Devices. (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Oda: "Atomiclayer-by-layer MOCVD of thinfilms of Oxide superconductors" Int.Workshop on Chemical Designing and Processing of High-Tc SuperconductorsII. (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Oda, M.Kimura and M.Otobe: "Coulombstaircase Characterisitics in silicon quantum dots fabricated by plasma processing" Silicon Nanoelectronics Workshop. (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Sugahara, E.Hasunuma,S.Imai and M.Matsumura: "Modeling of Si atomic-layer-epitaxy" Applied Surface Science. 107. 161-171 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] E.Hasumuma, S.Sugahara, S.Hoshino, S.Imai, K.Ikeda and M.Matsumura: "Gas-Phase-Reactino-Controlled Atomic-Layer-Epitaxy of Silicon" J.Vac.Science and Tecnology. (in press). (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Uchida, K.Taguchi, T.Nagai and M.Matsumura: "Low-Temperature CVD of OH-Free and Low-k Organic-Silica Films" Proc.DUMIC. (in press). (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Ikeda, S.Sugahara, Y.Uchida, T.Nagai and M.Matsumura: "Formation of An Atomically Abrupt Si/Ge Hetero-Interface" Japanese Journal of Applied Physics. (in press). (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Usami, S.Hayashi, Y.Uchida and M.Matsumura: "Liquid-Phase Deposition of Silicon-Dioxide Films using TetraEthyl Orthosilicate" Japanese Journal of Applied Physics. (in press). (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.W.Choi and M.Matsumura: "Poly-Si/Poly-SiCx Hetero-Junction Thin-Film Transistors" IEEE Transactions on Electron Devices. (in press). (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Matsumura and A.Saitoh: "Amorphous-Silicon Thin-Film Transistors Matchedto Ultra-Large Panels" Materials Research Society Symposium Proceedings. (in press). (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Choi and M.Matsumura: "Crystallization and Evaluation of Non-Stoichiometric Silicn-Carbon Films for Hetero Thin-Film Transistors" Materials Research Society Symposium Proceedings. 452. 933-940 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Saitoh and M.Matsumura: "Excimer-Laser-Produced Amorphous-Silicon Vertical Thin-Film Transistors" Japanese Journal of Applied Physics. 36-6. L668-L669 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Uchida,S.Takei and M.Matsumura: "Chemical Vapor Deposition of Hydrogen-Free Silicon-Dioxide Films" Japanese Journal of Applied Physics. 36-3. 1509-1512 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Ikeda, S.Imai and M.Matsumura: "Atomic Layer Etching of Germanium" Applied Surface Science. 112. 87-91 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Uchida, S.Takei and M.Matsumura: "Stabilization of Hydrogen-Free CVD-SiO2 Films" Materials Research Society Symposium Proceedings. 446. 21-26 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Uchida, S.Takei and M.Matsumura: "Step-Coverage Characteristics of Silicon-Dioxide Films Formed by A New Low-Temperature Chemical-Vapor-Deposition Method" Japanese Journal of Applied Physics. 36-8. L993-995 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] R.Ishihara and M.Matsumura: "Excimer-Laser-Produced Single-Crystal Silicon Thin-Film Transistors" Japanese Journal of Applied Physics. 36-10. 6167-6170 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] C.D.Kim and M.Matsumura: "Short-Channel Amorphous-Silicon Thin-Film Transistors" IEEE Transactions on Electron Devices. 43-12. 2172-2176 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Sugahara, T.Kitamura, S.Imai, Y.Uchida and M.Matsumura: "Ideal Monolayer Adsorption of Germanium on Si(100) Surface" Applied Surface Science. 107-11. 137-144 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Sugahara, E.Hasunuma, S.Imai and M.Matsumura: "Modeling of Silicon Atomic-Layer-Epitaxy" Applied Surface Science. 107-11. 161-171 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] C.D.Kim and M.Matsumura: "Excimer-Laser Crystallized Poly-Si TFT's with Transparent Gate" IEEE Transactions on Electron Devices. 43-4. 576-579 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Choi, Y.UChida and M.Matsumura: "Excimer-Laser Crystallization of Silicon-Carbon Films and Their Thin-Film Transistor Application" Japanese Journal of Applied Physics. 35-3. 1648-1651 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] W.C.Yeh, R.Ishihara, S.Morishita and M.Mastumura: "Low-Temparature Chemical-Vapor-Deposition of Silicon-Nitride Film from Hexachloro-Disilane and Hydrazine" Japanese Journal of Applied Physics. 35-2. 1509-1512 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Sugahara, T.Kitamura, S.Imai and M.Matsumura: "Ideal monolayer adsorption of germanium on Si(100) surface" Applied Surface Science. 107. 137-144 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Sugahara, Y.Uchida, T.Kitamura, T.Nagai, M.Matsuyama, T.Hattori and M.Matsumura: "A proposed atomic-layer-deposition of germanium on Si surface" Japanese Journal of Applied Physics. 36-3. 1609-1613 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Sugahara and M.Matsumura: "Modeling of germanium atomic-layer-epitaxy" Applied Surface Science. 112. 176-186 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Morishita, S.Sugahara and M.Matsumura: "Atomic-layer chemical-vapor-deposition of silicon nitride" Applied Surface Science. 112. 198-204 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Haraguchi and O.Sugiura: "Low Temperature Flow of High-Water Containing Glasses Prepared by Chemical Vapor Deposition" Japanese Journal of Applied Physics. 35-10A. L1290-L1292 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 藤本 明、杉浦 修: "TICS/H2O系SiO2CVDの堆積モデル" 第50回半導体・集積回路シンポジウム講演論文集. 124-129 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Haraguchi and O.Sugiura: "Low Temperature Flow of High-Water Contatining Glasses Prepared by Chemical Vapor Deposition" Japanese Journal of Applied Physics. 35,10A. L1290-L1292 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Fujimoto and O.Sugiura: "A Deposition mechanism of SiO2 CVD using Tetra-isocyanatesilance and Water" Materials Research Society Symposium Proceedings. (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.F.Moore: "Recent trends in the fabrication of High-Tc films and devices" FED Journal 6. 47-56 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.F.Moore, J.F.Walker and J.T.Whitney: "Focusedion beam processing for microscale fabrication" Microelectronic Engineering. 30. 517-522 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.J.Pauza, W.E.Booji, D.F.Moore and Y.Yuan: "Electron beam damage Josephsonjunctions:the relation between beam damageprofile and electrical properties" Czechoslovak Journal of Physics. 46. 1325-6 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Kiriyama, N.Nakajima, S.Yoshimura, D.F.Moore, S.C.Burgess and N.Shibaike: "A conceptualdesign environment for micromechanisms page" Proceedings of the European Design and Test Conference,IEEE. 1066-1409/96. 448-453 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.F.Walker, D.F.Moore and J.T.Whitney: "Focusedion beamprocessing for microscale fabrication" Microelectronic Engineering. 30. 517-522 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.F.Moore, J.H.Daniel and J.F.Walker: "Nano-and micro-technology applications of focusedion beam processing" Microelectronic Journal. 28. 465-473 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.C.Burgess, D.F.Moore, D.E.Newland and H.L.Klaubert: "A study of mechanical configuration optimisation in microsystems" Research Engineering Design. 9. 46-60 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.F.Moore, A.J.Pauza, M.G.Blamire and W.E.Booij: "Focusedelectron beam irradiation junctions for device applications" R & D Association for Future Electron Devices FED(invited paper). 107-110 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] W.E.Booij, A.J.Pauza, E.J.Tarte, D.F.Moore and M.G.Blamire: "Proximity coupling in high-Tc Josephson junctions produced by focused electron beam irradiation" Physical Review B. 55. 14600-14609 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.F.Moore,A.J.Pauza,W.E.Booij and M.G.Blamire: "Alternative types of YBaCuO Josephson junctions" International Superconductive Electronics Conference ISEC'97,ext.abstr.(invited paper). J4. 11-13 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.G.Blamire,W.E.Booij,A.J.Pauza,E.J.Tarte and D.F.Moore: "Improvements in the properties of electron-beam damage YBaCuO junctions" IEEE Trans.Applied Superconductivity. 7. 2856-2859 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.F.Moore,A.J.Pauza,W.E.Booij,M.G.Blamire,K.Herrmann,F.Baudenbacher,T.Harnisch,J.F.Walker,N.Cade and D.Jedmzik: "Asymmetric YBaCuO interferometers and SQUIDs made with focused electron-beam irradiation junctions" IEEE Trans.Applied Superconductivity. 7. 2494-2497 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] W.E.Booij,A.J.Pauza,D.F.Moore,E.J.Tarte and M.G.Blamire: "Electrodynamics of closely coupled YBaCuO junctions" IEEE Trans.Applied Superconductivity. 7. 3025-3028 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] R.M.Bostock,J.E.Townsend,R.Jones,R-J.E.Jansen and D.F.Moore: "Low cost integrated photonics systems" LEOS'97,San Francisco,IEEE Lasers and Electro-Optics Society(invited paper). 274-275 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.J.Pauza,W.E.Booij,K.Hermann,D.F.Moore,M.G.Blamire,D.A.Rudman and L.R.Vale: "Electron beam damaged high temperature Superconductor Josephson junctions" Journal Applied Physics. 82. 5612-5632 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Oda and D.F.Moore: "FED-Cambridge joint conference on future nanometrescale electron devices" FED Journal. 7. 53-55 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.H.Daniel,D.F.Moore,J.F.Walker and J.T.Whitney: "Focusedion beams microsystem fabrication" Microelectronic Engineering. 35. 431-434 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Herrman,A.J.Pauza,F.Baudenbacher,J.S.Santiso and D.F.Moore: "Electromigration effects in e-beam junctions" Physica C. 274. 306-316 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.J.Pauza,D.F.Moore: "Focused Electron Beam Irradiation(FEBI) Josephson junctions" Proceedings.HTS-WORKSHOP on Digital Applications,Josephson Junctions and 3-Terminal Devices. (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.F.Moore,J.H.Daniel.S.C.Burgess,A.Nakayama,N.Shibaike and T.Kiriyama: "Silicon-on-insulator material for sensors and accelerometers" IEE Colloqium on Silicon Fabricatedlnertial Instruments,London IEE 1996. 227 9. 1-5 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S F Yoon,R Ji,J Ahn and W I Milne: "Some Effects of Boron and Phosphorus Doping on the Properties of SiC:H Films Prepared Using ECRCVD" J.Vac.Sci.Tech.A15(1). (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M M M Bilek and W I Milne: "Silicon Deposited Using FCVA" Thin Solid Films. (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M M M Bilek and W I Milne: "Electronic Properties of FCVA prodeced a-Si:H" Electronics Letters. 32-21. 2016 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M M M Bilek and W I Milne: "Filterd Cathodic Vaccum Arc Deposition of Thin Film Si"" Thin Solid Films. 299 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] F J Clough,E M Sankara,Narayanan,Y Chen,W Eccleston and W I Milne: "A Polysilicon Thin Film Transistor Incorporating a Semi-Insulating Field Plate For High Voltage Circuitry on Glass" Applied Physics Letters. 71-13. 1777 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] F Udrea,W I Milne and P Hemment: "New High Voltage Device Structures in SOl Based Technology" Proc of SOI Electro Chemical Society Meeting,Paris,Sept. 355 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] F Udrea,A Popescu and W I Milne: "A New LIGBT Structure Based on Partial Isolation SOI Technology" IEE Device Letters. 33-10. 907 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J Evans and W I Milne: "A Simple Approximation of The Transconductance of a Power MOSFET" Electronics Letters. (in press). (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] F J Clough,Y Chen and W I Milne: "A Comparison of Novel and Conventional High Voltage Polysilicon TFTs"" Proceedings of 16th International Euro Display. 21 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J H Moon,S J Chung,W I Milne,M H Oh,J Jang: "Stability of Field Emission Current for hydrogenfree DLC Prepared by Layer-by-Layer Technique" Proceedings of IVMC 97,Kyongju,Korea. 455 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] R Ji,S F Yoon,J Ahn and W I Milne: "Some effects of P dopingin SiC:H Films prepared by ECR-CVD" Materials Science and Engineering B-Solid State Materials for Advanced Technology. 148-3. 215 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K Gilkes,H S Sands,D N Batchelder,J Robertson and W I Milne: "Quantitative Studies of Tetrahedral Bonding in Amorphous Carbon Films Using UV Raman Spectroscopy" Materials Research Society Symposium Proceedings. (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A Ilie,M Rattier,N Conway,B Kleinsorge,J Robertson and W I Milne: "Photoconductivity of DLC" Materials Research Society Symposium Proceedings. (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] W I Milne: "Field Emission from ta-C as a Function of Surface Treatment and Contact Material" Materials Research Society Symposium Proceedings. (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N Morrison,W I Milne,J Robertson,M Weiler,I Hutchings,L M Brown: "High Rate Deposition of ta-C:H Using an ECWR Plasma Source" Materials Research Society Symposium Proceedings. (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S J Chung,J H Moon,K C Park,M H Oh,W I Milne and J Jang: "Stability of Electron Emission Current in Hydrogen Free DLC Deposited by PECVD" J.Appl. Physics. 82-8. 4047 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M M M Bilek,M Chhowalla and W I Milne: "Influence of Reactive Gas on Ion Energy Distributions in Filterd Cathodic Vacuum Arcs" Applied Physics Letters. 71-14. 2002 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K Gilkes,H S Sands,D N Batchelder,J Robertson and W I Milne: "UV Raman Studies of ta-C" Diamond and Related Materials. (in press). (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N Conway,J Robertson and W I Milne: "Electric Properties and Doping of taC:H" Diamond and Related Materials. (in press). (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K J Clay,S P Speakman,N Morrison and W I Milne: "Materials Properties and Tribological Performance of re-PECVD DLC Coatings" Diamond and Related Materials. (in press). (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] B S Satyanarayanan,A Hart,W I Milne and J Robertson: "Field Emission from ta-C" Applied Physics Letters. 71-10. 1430-1432 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] W I Milne,J Robertson,B S Satyanarayanan and A Hart: "Field Emission from ta-C" Materials Research Society Symposium Proceedings. (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] V I Merkulov,J S Lannin,C H Munro,S A Asher,V S Veerasamy and W I Milne: "UV Studies of Tetrahedral Bondingin DLC" Phys Rev Lett. 78-25. 4869 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y J Lui,S F Yoon,J Ahn and W I Milne: "Effect of H Dilution on the Deposition of Carbon Rich a-SiC:H Produced from ECR" Mats Science and Engineering B-Solid State Materials. 3. 188 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Otobe, J.Kawahara and S.Oda: ""Preferential Nucleation of Nanocrystalline Silicon along Microsteps"" Japanese Journal of Applied Physics. 35. 1325-1328 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Otobe, T.Kanai, T.Ifuku, H.Yajima, and S.Oda: ""Nanocrystalline silicon formation in a SiH4 plasma cell"" Journal of Non-Crystalline Solids. 198-200. 875-878 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Yamamoto, A.Kawaguchi and S.Oda: ""Preparation of Thin Films of YBa2Cu30x with a Smooth Surface by Atomic Layr MOCVD"" Materials Science and Engineering B. 41. 87-92 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Oda: ""Preparation of Nanocrystalline Silicon Quantum Dot Structure by Pulsed Plasma Processes"" Adv.Colloid and Interface Sci.71-72. 31-47 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Yamamoto, A.Kawaguchi, K.Nagata, T.Hattori and S.Oda: ""Atomic layr-by-layr epitaxy of oxide superconductors by MOCVD"" Applied Surface Science. 112. 30-37 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Yamamoto, T.Watanabe and S.Oda: ""Junction Formation in YBaCuO Thin Films by Scanning Probe"" Journal of Low Temperature Physics. 106. 423-432 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Ifuku, M.Otobe, A.Itoh and S.Oda: ""Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma"" Japanese Journal of Applied Physics. 36. 4031-4034 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Dutta, M.Kimura, Y.Honda, M.Otobe, A.Itoh and S.Oda: ""Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing"" Japanese Journal of Applied Physics. 36. 4038-4041 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Itoh, T.Ifuku, M.Otobe and S.Oda: ""Grain-Size Control of Nanocrystalline Silicon by Pulsed Gas Plasma Process"" Materials Research Society Symposium Proceedings. 452. 749-754 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Kanemitsu, S.Okamoto, M.Otobe and S.Oda: ""Photoluminesnce Mechanism in Surface-Oxidixed Silicon Nanocrystals"" Phys.Rev.B.55. R7375-R7378 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Suzuki and S.Oda: ""Proposal of coplanar-type high-Tc superconducting field-effect devices"" Physica C. 282-287. 2495-2496 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Yamamoto, A.Kawaguchi and S.Oda: ""Anomalous Current-Voltage Characteristics along the c-Axis in YBaCuO Thin Films Prepared by MOCVD and AFM Lithography"" Physica C. 293. 244-248 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Otobe, H.Yajima and S.Oda: ""Observation of Single Electron Charging Effect in Nanocrystalline Silicon at Room Tempereture Using Atomic ForceMicroscopy"" Applied Physics Letters. 72 (in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Suzuki, H.Tobisaka and S.Oda: ""Electric Properties of Coplanar High-Tc Superconducting Field^Effect Devices"" Japanese Journal of Applied Physics. 37 (in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Z.Wang and S.Oda: ""Atomic Layr-by Layr Metal-Organic Chemical Vapor Deposition fo SrTiO3 Films with Very smooth Surface"" Japanese Journal of Applied Physics. 37, (in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] E.Hasumura, S.Sugahara, S.Hoshino, S.Imai, K.Ikeda and M.Matsumura: ""Gas-Phase-Reaction-Controlled Atomic-Layr-Epitaxy of Silicon"" Journal of Vacuum Science and Technology. (in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Uchida, K.Taguchi, T.Nagai and M.Matsumura: ""Low-Temperature CVD of OH-Free and Low-k Organic-Silica Films"" Proc.DUMIC. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Ikeda, S.Sugahara, Y.Uchida, T.Nagai and M.Matsumura: ""Formation of An Atomically Abrupt Si/Ge Hetero-Interface"" Japanese Journal of Applied Physics. (in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Usami, S.Hayashi, Y.Uchida and M.Natsumura: ""Liquid-Phase Deposition of Silicon-Dioxide Films using Tetra-Ethyl Orthosilicate"" Japanese Journal of Applied Physics. (in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.W.Choi and M.Matsumura: ""Poly-Si/Poly-SiCx Hetero-Junction Thin-Film Transistors"" IEEE T-ED. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Matsumura and A.Saitoh: ""Amorphous-Silicon Thin-Film Transistors Matched to Ultra-Large Panels"" Materials Research Society Symposium Proceedings. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Choi and M.Matsumura: ""Crystallization and Evaluation of Non-Stoichiometric Silicon-Carbon Films for Hetero Thin-Film Transistors"" Materials Research Society Symposium Proceedings. 452. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Saitoh and M.Matsumura: ""Excimer-Laser-Produced Amorphous-Silicon Vertical Thin-Film Transistors"" Japanese Journal of Applied Physics. Vol.36, No.6. L668-L669 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Sugahara, U.Uchida, T.Kimura, T.Nagai, M.Matsuyama, T.Hattori and M.Matsumura: ""A Proposed Atomic-Layr-Deposition of Germanium on Si Surface"" Japanese Journal of Applied Physics. Vol.36, No.3. 1609-1613 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Uchida, S.Takei and M.Matsumura: ""Chemical Vapor Deposition of Hydrogen-Free Silicon-Dioxide Films"" Japanese Journal of Applied Physics. Vol.36, No.3. 1509-1512 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Sugahara and M.Matsumura: ""Modeling of Germanium Atomin-Layr-Epitaxy"" Applied Surface Science. Vol.112. 176-186 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Morishita, S.Sugahara and M.Matsumura: ""Atomic-Layr Chemical-Vapor-Deposition of Silicon-Nitride"" Applied Surface Science. Vol.112. 198-204 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Ikeda, S.Imai and M.Matsumura: "Atomic Layr Etching of Germanium" Applied Surface Science. Vol.112. 87-91 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Uchida, S.Takei and M.Matsumura: ""Stabilization of Hydrogen-Free CVD-SiO2 Films"" Materials Research Society Symposium Proceedings. Vol.446. 21-26 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Uchida, S.Takei and M.Matsumura: ""Step-Coverage Characteristics of Silicon-Dioxide Films Formed by A New Low-Temperature Chemical-Vapor-Deposition Method"" Japanese Journal of Applied Physics. Vol.36, No.8. L993-995 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] R.Ishihara and M.Matsumura: ""Excimer-laser-Produced Single-Crystal Silicon thin-Film Transistors"" Japanese Journal of Applied Physics. Vol.36, No.10. 6167-6170 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.D.Kim and M.Matsumura: ""Short-Channel Amorphous-Silicon Thin-Film Transistors"" IEEE ED. Vol.43, No.12. 2172-2176 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Sugahara, T.Kitamura, S.Imai, Y,Uchida and M.Matsumura: ""Ideal Monolayr Adsorption of Germanium on Si (100) Surface"" Applied Surface Science. Vol.107, No.11. 137-144 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Sugahara, E.Hasunuma, S.Imai and M.Matsumura: ""Modeling of Silicon Atomic-Layr-Epitaxy"" Applied Surface Science. Vol.107, No.11. 161-171 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.D.Kim and M.Matsumura: ""Excimer-Laser Crystallied Poly-Si TFT's with Transparent Gate"" IEEE Transactions on Electron Devices. Vol.43, No.4. 576-579 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Choi, Y.Uchida and M.Matsumura: ""Excimer-Laser Crystallization of Silicon-Carbon Films and Their Thin-Film Transistor Application"" Japanese Journal of Applied Physics. Vol.35, No.3. 1648-1651 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] W.C.Yeh, R.Ishihara, S.Morishita and M.Matsumura: ""Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride Film from Hexachloro-Disilane and Hydrazine"" Japanese Journal of Applied Physics. Vol.35, No.2. 1509-1512 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Haraguchi and O.Sugiura: ""Low Temperature Flow of High-Water Containing Glasses Prepared by Chemical Vapor Deposition, "" Japanese Journal of Applied Physics. vol.35, no.10A. L1290-L1292 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.F.Walker, D.F.Moore, and J.T.Whitney: ""Focused ion beam processing for microscale fabrication"" Microelectronic Engineering. 30. 517-522 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Oda and D.F.Moore: ""FED-Cambridge joint conference on furture nanometer scale electron devices"" FED Journal. 7. 53-55 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.H.Daniel, D.F.Moore, J.F.Walker and J.T.Whitney: ""Focused ion beams in microsystem fabrication"" Microelectronic Engineering. 35. 431-434 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Herrmann, A.J.Pauza, F.Baudenbacher, J.S.Santiso and D.F.Moore: ""Electromigration effects in e-beam junctions"" Physica C. 274. 309-316 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] D.F.Moore, J.H.Daniel and J.F.Walker: ""Nano-and micro-technology applications of focused ion beam processing"" Microelectronics Jounal. 28. 465-473 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.C.Burgess, D.F.Moore, D.E.Newland and H.L.Klaubert: ""A study of mechanical configuration optimisation in micro-systems"" Research in Engineering Design. 9. 46-60 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] D.F.Moore, A.J.Pauza, M.G.Blamire and W.E.Booij: ""Focused electron beam irradiation junctions for device applications"" R & D Association for Future Devices FED (invited paper). 107-110 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] W.E.Booij, A.J.Pauza, E.J.Tarte, D.F.Moore and M.G.Blamire: ""Proximity coupling in high-Tc Josephson junctions produced by focused electron beam iradiation"" Physical Review B. 55. 14600-14609 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.G.Blamire, W.E.Booij, A.J.Pauza, E.J.Tarte and D.F.Moore: ""Improvement in the properites of electron-beam damage YBaCuO junctions"" IEEE Trans.Applied Superconductivity. 7. 2856-2859 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] D.F.Moore, A.J.Pauza, W.E.Booij, M.G.Blamire, K.Hermann, F.Baudenbacher, T.Harnisch, J.F.Walker, N.Cade & D.Jedamzik: ""Asymmetric YBaCuO interferometers and SQUIDs made with focused electron-beam irradiation junctions"" IEEE Trans.Applied Superconductivity. 7. 2494-2497 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] W.E.Booij, A.J.Pauza, D.F.Moore, E.J.Tarte and M.G.Blamire: ""Electrodynamics of closely coupled YBaCuO junctions"" IEEE Trans.Applied Superconductivity. 7. 3025-3028 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.J.Pauza, W.E.Booij, K.Herrmann, D.F.Moore, M.G.Blamire, D.A.Rudman and L.R.Vale: ""Electron beam damaged high temperature superconductor Josephson junctions"" Journal of Applied Physics. 82. 5612-5632 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.F.Yoon, R.Ji, J.Ahn and W.I.Milne: ""Some Effects of Boron and Phosphorus Doping on the Properties of SiC : H Films Prepared Using ECRCVD"" Journal of Vacuum Science and Technology. A15(1). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.M.M.Bilek and W.I.Milne: ""Silicon Deposited Using the FCVA"" Thin Solid Films. (in press). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.M.M.Bilek and W.I.Milne: ""Electronic Properties of FCVA Produced a-Si : H"" Electronics Letters. Vol 32 no 21. 2016 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.M.M.Bilek and W.I.Milne: ""Filtered Cathodic Vacuum Arc Deposition of Thin Film Si"" Thin Solid Films. 299. (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F.J.Clough, E.M.Sankara, Narayanan, Y.Chen, W.Eccleston and W.I.Milne: ""A Polysilicon Thin Film Transistor Incorporating a Semi-Insulating Field Plate For High Voltage Circuitry on Glass"" Applied Physics Letters. vol 71, no 13. 1777 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F.Udrea, A.Popescu and W.I.Milne: ""A New LIGBT Structure Based on Partial Isolation SOI Technology"" IEE Device Letters. vol 33 no 10. 907 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Evans and W.I.Milne: ""A Simple Approximation of The Transconductance of a Power MOSFET"" Electronics Letters. (in press). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] R.Ji, S.F.Yoon, J.Ahn and M.I.Milne: ""Some effects of P doping in SiC : H Films prepared by ECR-CVD"" Materials Science and Engineering B-Solid Materials for Advanced Technology. vol48, no3. 215 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Jang, S.J.Chung, J.H.Moon, K.C.Park, M.H.Oh, W.I.Milne: ""Stability of Electron Emission Current in Hydrogen Free DLC Deposited by PECVD"" Journal of Applied Physics. vol 82, no 8. 4047 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.M.M.Bilek, M.Chhowalla and W.I.Milne: ""Influence of Reactive Gas on Ion Energy Distribution in Filtered Cathodic Vacuum Arcs"" Applied Physics Letters. vol 71, no 14. 2002 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Gilkes, H.S.Sands, D.N.Batchelder, J.Robertson and W.I.Milne: ""UV Raman Studies of ta-C"" Diamond and Related Materials. (in press). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Conway, J.Robertson and W.I.Milne: ""Electronic Properties and Doping of taC : H"" 1997 to be published in Diamond and Related Materials. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.J.Clay, S.P.Speakman, N.Morrison and W.I.Milne: ""Materials Properties and Tribological Performance of re-PECVD DLC Coatings"" Diamond and Related Materials. (in press). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] B.S.Satyanarayanan, A.Hart, W.I.Milne and J.Robertson: ""Field Emission from ta-C"" Applied Physics Letters. Vol 71, No 10. 1430-1432 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] V.I.Merkulov, J.S.Lannin, C.H.Munro, S.A.Asher, V.S.Veerasamy and W.I.Milne: ""UV Studies of Tetrahedral Bonding in DLC"" Phys Rev Lett.Vol78, No25. 4869 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.F.Yoon, A.Ji, J.Ahn, and W.I.Milne: ""The Effect of Microwave Power on the Deposition of Boron Doped a-Si-C : H Using ECR"" Thin Solid Films 288. No 1-2. 155-159 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.C.Park, J.H.Moon, S.J.Chung, J.Jang, M.H.Oh, and W.I.Milne: ""Deposition of n-type DLC Using the Layr by Layr Technique and its Electron Emission by Using"" Applied Physics Letters. 70(11). 1381 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Gilkes, H.S.Sands, D.N.Batchelder, J.Robertson and W.I.Milne: ""Direct Observation of sp3 Bonding in ta-C using UV Raman Spectroscopy"" Applied Physics Letters. 70 (15). 1980 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.R.P.Silva, S.Xu, B.K.Tay, H.S.Tan, H.J.Scheibe, M.Chhowalla and W.I.Milne: ""The Structure and Morphology of ta-C Films"" Thin Solid Films. Vol 291. 317 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Xu, D.Flynn, B.K.Tay, S.Prawer, K.W.Nugent, S.R.P.Silva, Y.Lifshitz and W.I.Milne: ""The Mechanical and Raman Properties of FCVA Prepared ta-C Films with a High sp3 Fraction"" Phil Mag B. Vol 76, No 3. 351-361 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Manish, Chhowalla.J.Robertson, C.W.Chen, S.R.P.Silva, C.Davis, G.A.Amaratunga and M.I.Milne: ""Props of ta-C as a Function of Ion Energy, Growth Rae and Deposition Temperature"" Journal of Applied Physics. Vol81, No1. 139 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.M.M.Bilek, D.McKenzie, Y.Yin, M.Chhowalla and M.I.Milne: ""Interactions of the Directed Plasma from a Cathodic Arc with Electrodes and Magnetic Ducts"" IEEE Trans on Plasma Sci.Vol24, No5. 1291 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.S.Park and M.I.Milne: ""Etching of ta-C Films in an O2 Plasma"" Japanese Journal of Applied Physics, Part 2. Vol35, No12A. L1550 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Xu, T.Y.Qiang, T.H.Siang, T.B.kang and M.I.Milne: ""Simulation of Plasma Flow in Toroidal Solenoid Filters"" IEEE Trans on Plasma Sci.Vol24, No6. 1309 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Egret, M.P.Smith, J.Robertson, W.I.Milne and F.J.Clough: ""DLC MSMs for AMLCD Displays"" Diamond and Related Materials. Vol6, No5-7. 879 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] G.Fusco, A.Tagliaferro, J.Robertson and M.I.Milne: ""Paramagnetic Centers in ta-C"" Diamond and Related Materials. Vol16, No5-7. 783 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.F.Yoon, R.Ji, J.Ahn, and W.I.Milne: ""A Raman and Photoconductivity Analysis of Boron Doped a-SiC : H Films Deposited Using the ECR Plasma CVD Method"" J.of Mats Science. Vol32, No5. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.F.Yoon, R.Ji, J.Ahn, and W.I.Milne: ""The Effects of Process Pressure and Microwave Power on the Properties of Boron Doped a-SiC : H Films Prepared Using an ECR Technique"" Diamond and Related Materials 5. No 11. 115 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.R.P.Silva, S.Xu, B.K.Tay, H.S.Tan and W.I.Milne: ""Nanocrystallites in ta-C Films"" Applied Physics Letters. 69(4). 22 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.C.Park, J.H.Moon, S.J.Chung, J.H.Jung, B.K.Ju, M.H.Oh, W.I.Milne, M.K.Han and J.Jang: ""Field Emission Properties of N Doped ta-C Films"" Journal of Vacuum Science and Technology B. Vol15, No2. 431 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.C.Park, J.H.Moon, S.K.Chung, M.H.Oh, W.I.Milne, and J.Jang: ""Relationship Between Field Emission Characteristics and Hydrogen Content in DLC Deposited Using a Layr-by-Layr Technique"" Journal of Vacuum Science and Technology B. Vol15, No2. 428 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F.J.Clough, W.I.Milne, B.Kleinsorge, J.Robertson, G.A.J.Amaratunga and B.N.Roy: ""Tetrahedrally Bonded Amorphous Carbon (ta-C) Thin Film Transistors"" Electronics Letters. 498 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Xu, B.K.Tay, H.S.Tan, L.Zhong, Y.Tu, S.R.P.Silva and W.I.Milne: ""Properties of Carbon Ion Deposited Tetrahedral Amorphous Carbon Films as a Function of Ion Energy"" Journal of Applied Physics. Vol79, No9. 723 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.R.P.Silva, S.Xu, B.K.Tay, H.S.Tan, H.J.Scheibe, M.Chhowalla and W.I.Milne: ""The Structure of ta-C"" Thin Solid Films. 290-291. 317 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.J.Lui, S.F.Yoon, Ahn and W.I.Milne: ""Effect of H Dilution on Deposition of C Rich a-siC : H Films by ECR"" Journal Mat Sci Part B Solid State Mats for Adv.tech.Vol 39, No 3. 188 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.F.Yoon, J.Rong, J.Ah and W.I.Milne: ""The Effecdt of Microwave Power on the Deposition of Boron Doped a-SiC : H Films"" Thin Solid Films. Vol No 1-2. 155 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.S.Fatt, S.Miyajima and W.I.Milne: ""Photo-CVD Produced Amorophous Silicon Carbide"" Materials Science and Engineering B. (in press). (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Robertson and W.I.Milne: ""Band Model for Emission from Diamond Like Carbon"" Journal of Non Crystalline Solids. (in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] W.I.Milne and J.Robertson: ""Field Emission in DLC"" J.of the Korean Physical Society. Vol30, No Ssp. S182 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.A.kastner: ""Mesoscopic Physics with Artificial Atoms"" Comments Cond.Mat.Phys.17. 349 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] O.Klein, D.Goldhaber-Gordon, C.de C.Chamon, and M.A.Kastner: ""Magnetic-field Dependence of the Level Spacing of a Small Electron Droplet"" Physics Review B. 53. R4221 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F.Nihey, M.A.Kastner, and K.Nakanura: ""Insulator to Quantum Hall Liquid Transition in an Antidot Lattice"" Physics Review. (in press).

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] B.O.Wells, R.J.Birgeneau, F.C.Chou, Y.Endoh, D.C.Johnston, M.A.Kastner, Y.S.Lee, G.Shirane, J.M.Tranquada and K.Yamada, Z.: ""Intercalation and Staging Behavior in Super-Oxygenated La2 CuO4+d"" Phys.B. 100. 535 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.A.Kastner: ""Artificial Atoms : Their Physics and Potential Application"" FED Journal. 7. 3 (1996)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-03-16  

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