1998 Fiscal Year Final Research Report Summary
Basic research and application of interface tunneling - Development of low temperature UHV-BEEM-
| Project/Area Number |
08102001
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| Research Category |
Grant-in-Aid for Specially Promoted Research
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| Allocation Type | Single-year Grants |
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| Review Section |
Physics
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| Research Institution | Tohoku University |
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Principal Investigator |
SAKURAI Toshio Tohoku University, Institute for Materials Research, Professor, 金属材料研究所, 教授 (20143539)
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| Co-Investigator(Kenkyū-buntansha) |
KOBAYASHI Tstomu Tohoku University, Institute for Materials Research, Research Associate, 金属材料研究所, 助手
HASEGAWA Yukio Tohoku University, Institute for Materials Research, Associate Professor, 金属材料研究所, 助教授 (80252493)
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| Project Period (FY) |
1996 – 1998
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| Keywords | BEEM / STM / metal-semiconductor interface / hetero-semiconductor interface / local modification at interfaces |
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| Research Abstract |
In this project, we have studied on the following subjects as are listed below; (1) measurements of electronic transmission at a local area of interfaces and its modification using ballistic electron emission microscope (BEEM) (2) a study on lattice-mismatched III-V hetero-semiconductor interfaces using scanning tunneling microscope (STM) combined with molecular beam epitaxy (MBE) (3) charge transfer between adsorbed fullerene molecules and substrate measured by high-resolution electron energy loss spectroscopy (HREELS) and STM (4) surface potential and local work function measurements using STM (5) an study of elementally analytical STM by detecting emitted current induced by X-ray irradiation (6) formation mechanism of nano-crystalline crystals with time-of-flight atom-probe and 3-dimensional atom probe. Based on those results, atomic interaction, electron transmission, charge transfer, diffusion, strain, and etc, which are common issues at various interfaces, have been discussed.
In a study of BEEM (1), we have succeeded in modifying electron transmission properties of local area reversibly by injecting electrons with an appropriate energy. This work has attracted much attention in an application to Tera-bit high density recording, cited as a today's topics in a journal of Science. We also succeeded in taking atomically resolved STM images of GaN layer grown on SiC substrate using MBE-STM (2). Studies on atomic structure of surfaces and processes in crystal growth of GaN layer are quite important both scientifically and industrially because of its application to blue light emitting devices. Our works were presented as an invited talk at various international conferences.
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