1997 Fiscal Year Annual Research Report

ナノ構造の表面・界面の制御と単電子トンネル障壁の最適化

Research Project

Project/Area Number	08247101
Research Institution	Hokkaido University
Principal Investigator	長谷川英機北海道大学, 工学研究科, 教授 (60001781)
Co-Investigator(Kenkyū-buntansha)	菅野卓雄東洋大学, 工学部, 教授 (50010707) 安田幸夫名古屋大学, 工学研究科, 教授 (60126951) 澤木宣彦名古屋大学, 工学研究科, 教授 (70023330) 小間篤東京大学, 理学系研究科, 教授 (00010950) 岩見基弘岡山大学, 理学部, 教授 (80029123)
Keywords	単電子デバイス / ナノ構造 / 表面・界面 / トンネル障壁 / 量子ドット / 原子スケール制御
Research Abstract	本研究は、平成8〜11年度にわたり設定された重点領域研究「単電子デバイスとその高密度集積化」の計画研究として、その主要研究項目(A02)「ナノ構造の表面・界面の制御と単電子トンネル障壁の最適化」を担当するものである。本年度における主要な成果を以下にまとめる。 1)Si界面制御層技術による原子スケールの界面制御により、ナノ構造材料表面のパッシベーションに成功した。 2)3ゲートのラップ形化合物半導体単電子トランジスタにより、高温動作および大きな電圧利得の実現に成功した。また、MBE選択成長による量子細線構造とラップ形ゲートの組み合わせが、高温動作化合物半導体単電子デバイス実現に有望であることを示した。 3)真空蒸着法により、SiCの(0001)C面の(1x1)構造上へのCu微粒子の形成、加熱したSi(001)面上への10nmサイズのAu微粒子の形成に成功した。特に、後者では、基板ステップ位置による微粒子の位置制御の可能性が示された。 4)層状物質ヘテロ基板上へのC60分子の選択成長において、異なる層状物質を用いることにより選択成長の生じる領域を制御できることを見出した。これにより様々な形状の有機分子ナノ構造の形成が可能となった。 5)GaAs系の量子ドット構造において、電子数が少ないほどフォノン散乱が抑制されることを実験およびシミュレーションにより明らかにした。 6)集束イオンビームを用いたイオン注入により形成したホッピング伝導系において、単電子トンネルに起因する伝導度の周期的な振動を観測した。振動周期から、量子ドットのサイズは数10nm程度であることが示された。 7)非対称トンネル障壁を有する単電子トランジスタでは、一方向電子輸送が容易になり、回路設計に自由度が増すことを、シミュレーションにより示した。 8)VHF帯を用いたSiH_4プラズマプロセスにより、均一かつ微細な単結晶Siドット形成に成功した。これと微細加工技術を組み合わせ、単一および多重ドット単電子デバイスを試作した。それぞれのデバイスにおいて、単一電子トンネリングに起因すると考えられる特性が観測された。

Research Products
(45 results)

All Other

All Publications (45 results)

[Publications] Y.Hanada: "Direct Formation of InGaAs Coupled Wire-Dot Structures by Selective Molecular Beam Epitaxy on InP Patterned Substrates" Solid State Electronics. 印刷中 (1998)
[Publications] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE" Solid State Electronics. 印刷中 (1998)
[Publications] T.Hashizume: "In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown(2x4)GaAs Surfaces" Japanese Journal of Applied Physics. 印刷中 (1998)
[Publications] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based InGaAs Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 印刷中 (1998)
[Publications] B.Adamowicz: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface Recombination Velocity" Japanese Journal of Applied Physics. 印刷中 (1998)
[Publications] N.Tsurumi: "In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs(001)-(2x4)Surface" Japanese Journal of Applied Physics. 印刷中. (1998)
[Publications] Y.Satoh: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. 印刷中. (1998)
[Publications] H.Hasegawa: "Electrochemical Formation and Characterization of In-Plane and Wrap Gate Structures for Realization of GaAs-and InP-Based Quantum Wires and Dots" Applied Surface Science. 123/124. (1998)
[Publications] T.Hashizume: "Surface Passivation of GaAs with Ultrathin Si_3N_4/Si Inter-face Control Layer Formed by In-Situ ECR Plasma Nitridation" Applied Surface Science. 123/124. (1998)
[Publications] H.Takahashi: "Novel InP Metal-Insulator-Semiconductor Structure Having Ultrathin Silicon Interface Control Layer" Applied Surface Science. 123/124. (1998)
[Publications] H.Hasegawa: "Interface-Controlled Schottky Barriers on InP and Related Materials" Solid State Electronics. 41. 1441-1450 (1998)
[Publications] S.Suzuki: "Fabrication and Electrical Characterization of InP-Based Insulated Gate Power HEMTs Using Ultrathin Si Interface Control Layer" Solid State Electronics. 41. 1641-1646 (1998)
[Publications] B.Adamowicz: "Photoluminescence Characterization of Air Exposed AlGaAs Surface and Passivated Ex-Situ by Ultrathin Silicon Interface Control Laye" Physica E. 印刷中. (1998)
[Publications] H.Hasegawa: "Formation of InP-Based Quantum Structures by Selective MBE on Patterned Substrates Having High-Index Facets" Microelectronics Journal. 28. 887-901 (1997)
[Publications] M.Araki: "Fabrication of InGaAs Quantum Wires and Dots by Selective Molecular Beam Epitaxial Growth on Various Mesa-Patterned(001)InP Substrates" Japanese Journal of Applied Physics. 36. 1763-1769 (1997)
[Publications] H.Fujikura: "Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires Having Silicon Interlayer-Based Edge Passivation and Its Interpretation" Japanese Journal of Applied Physics. 36. 1937-1943 (1997)
[Publications] S.Kasai: "Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas" Japanese Journal of Applied Physics. 36. 1678-1685 (1997)
[Publications] H.Okada: "Observation of Coulomb Blockade Oscillations up to 50K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy in InP substrates" Japanese Journal of Applied Physics. 36. 1672-1677 (1997)
[Publications] T.Kudoh: "Controlled Formation of Metal-Semiconductor Interface to 2DEG Layer by In-Situ Electrochemical Process and Its Application to In-Plane Gated Electron Waveguide Devices" Applied Surface Science. 117/118. 342-346 (1997)
[Publications] M.Kihara: "Effect of Mis-Orientation of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy" Applied Surface Science. 117/118. 385-389 (1997)
[Publications] H.Hasegawa: "Excitation Power Dependent Photoluminescence Characterization of Insulator-Semiconductor Interfaces on Near Surface Quantum Structures Passivated Silicon Interface Control Layer Technology" Applied Surface Science. 117/118. 710-713 (1997)
[Publications] K.Ikeya: "Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control LAyer-Based Technique" Japanese Journal of Applied Physics. 36. 1756-1762 (1997)
[Publications] H.Fujikura: "Formation of Two-Dimensional Arrays of InP-Based InGaAs Quantum Dots on Patterned Substrates by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 36. 4092-4096 (1997)
[Publications] H.Okada: "Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires" Japanese Journal of Applied Physics. 36. 4156-4160 (1997)
[Publications] Y.Ishikawa: "Kink defects and fermi level pinning on(2x4)reconstructed molecular beam epitaxially grown surfaces of GaAs and Inp studied by ultrahigh-vacuum scanning tunneling microscopy and X-ray photoelectron spectroscopy" Journal of Vacuum Science and Technology B. 15. 1163-1172 (1997)
[Publications] H.Hasegawa: "Evolution Mechanism of Nearly-Pinning Platinum/N-Type Indium Phosphide Interface with a High Schottky Barrier Height by In-Situ Electrochemical Process" Journal of Vacuum Science and Technology B. 15. 1227-1235 (1997)
[Publications] Y.Dohmae: "Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitor Having Silicon Interface Control Layer" Japanese Journal of Applied Physics. 36. 1834-1840 (1997)
[Publications] Y.Ishikawa: "Missing-dimer structures and their kink defects on molecular beam epitaxially grown(2x4)reconstructed(001)InP and GaAs surfaces studied by ultrahigh-vacuum scanning tunneling microscopy" Japanese Journal of Applied Physics. 36. 1749-1755 (1997)
[Publications] T.Sato: "Large Schottky Barrier Heghts on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process" Japanese Journal of Applied Physics. 36. 1811-1817 (1997)
[Publications] T.Hashizume: "Dominant Electron Trap with Metastable state in Molecular Beam Epitaxial GaAs Grown at Low Temperatures" Japanese Journal of Applied Physics. 36. 1775-1780 (1997)
[Publications] T.Yoshida: "Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si(111)Surfaces by Contactless Capacitance-Voltage and Photoluminescence Methods" Japanese Journal of Applied Physics. 36. 1453-1459 (1997)
[Publications] T.Jikimoto: "Photoemission Study of 6H-SiC(0001)Si face" Applied Surface Science. 117/118. 794 (1997)
[Publications] M.Hirai: "Investigation of metal/SiC interface using electron spectroscopy and scanning tunneling microscopy" Applied Surface Science. 113/114. 467 (1997)
[Publications] T.Loher: "Heteroepitaxial Growth of Lattice Mismatched Materials using Layered Compound Buffer Layers" Applied Surface Science. (1998)
[Publications] K.Ueno: "Fabrication of C_<60> Nanostructures by Selective Growth on GaSe/MoS_2 and InSe/MoS_2 Heterostructure Substrates" Applied Surface Science. (1998)
[Publications] K.Sasaki: "Nanostructure Fabrication Using Selective Growth on Nanosize Patterns Drawn by a Scanning Probe Microscope" Japanese Journal of Applied Physics. 36. 4061-4064 (1997)
[Publications] S.Niwa: "Energy relaxation of photo-excited hot electrons under an external electric field in a quasi-one dimensional structures" Physica Status Solidi(b). 204. 283-286 (1997)
[Publications] N.Sawaki: "Tunneling transfer and energy relaxation rate of photo-excited carriers in coupled quantum wells" Japanese Journal of Applied Physics. 36. 4008-4012 (1997)
[Publications] N.Sawaki: "Effect of carrier-carrier scattering on the tunneling and energy relaxation process in a coupled quantum well" Physica Status Solidi(b). 204. 423-426 (1997)
[Publications] Y.Yasuda: "Effects of H-termination on initial oxidation process" Applied Surface Science. 113/114. 579 (1997)
[Publications] K.Ohmori: "Initial oxidation of Si(100)-(2x1)H monohydride surfaces studies by scanning tunneling micro scopy/scanning tunneling spectroscopy" Applied Surface Science. 117/118. 114 (1997)
[Publications] Y.Matsumoto: "Advantages of the Asymmetric Tunnel Barrier for High Density Integration of Single Electron Devices" Japanese Journal of Applied Physics. 36. 4143-4146 (1997)
[Publications] M.Otabe: "Observation of Single Electron Charging Effects in Nanocrystalline Silicon at Room Temperature Using Atomic Force Microscopy" Applied Physics Letter. 72. (1998)
[Publications] Y.Kanemitsu: "Photoluminescnce Mechanism in Surface-Oxidized Silicon Nanocrystals" Physical Review B. 55. R7375-R7378 (1997)
[Publications] A.Dutta: "Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing" Japanese Journal of Applied Physics. 36. 4038-4041 (1997)

1997 Fiscal Year Annual Research Report

ナノ構造の表面・界面の制御と単電子トンネル障壁の最適化

Principal Investigator

長谷川 英機 北海道大学, 工学研究科, 教授 (60001781)

Research Products

[Publications] Y.Hanada: "Direct Formation of InGaAs Coupled Wire-Dot Structures by Selective Molecular Beam Epitaxy on InP Patterned Substrates" Solid State Electronics. 印刷中 (1998)

[Publications] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE" Solid State Electronics. 印刷中 (1998)

[Publications] T.Hashizume: "In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown(2x4)GaAs Surfaces" Japanese Journal of Applied Physics. 印刷中 (1998)

[Publications] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based InGaAs Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 印刷中 (1998)

[Publications] B.Adamowicz: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface Recombination Velocity" Japanese Journal of Applied Physics. 印刷中 (1998)

[Publications] N.Tsurumi: "In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs(001)-(2x4)Surface" Japanese Journal of Applied Physics. 印刷中. (1998)

[Publications] Y.Satoh: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. 印刷中. (1998)

[Publications] H.Hasegawa: "Electrochemical Formation and Characterization of In-Plane and Wrap Gate Structures for Realization of GaAs-and InP-Based Quantum Wires and Dots" Applied Surface Science. 123/124. (1998)

[Publications] T.Hashizume: "Surface Passivation of GaAs with Ultrathin Si_3N_4/Si Inter-face Control Layer Formed by In-Situ ECR Plasma Nitridation" Applied Surface Science. 123/124. (1998)

[Publications] H.Takahashi: "Novel InP Metal-Insulator-Semiconductor Structure Having Ultrathin Silicon Interface Control Layer" Applied Surface Science. 123/124. (1998)

[Publications] H.Hasegawa: "Interface-Controlled Schottky Barriers on InP and Related Materials" Solid State Electronics. 41. 1441-1450 (1998)

[Publications] S.Suzuki: "Fabrication and Electrical Characterization of InP-Based Insulated Gate Power HEMTs Using Ultrathin Si Interface Control Layer" Solid State Electronics. 41. 1641-1646 (1998)

[Publications] B.Adamowicz: "Photoluminescence Characterization of Air Exposed AlGaAs Surface and Passivated Ex-Situ by Ultrathin Silicon Interface Control Laye" Physica E. 印刷中. (1998)

[Publications] H.Hasegawa: "Formation of InP-Based Quantum Structures by Selective MBE on Patterned Substrates Having High-Index Facets" Microelectronics Journal. 28. 887-901 (1997)

[Publications] M.Araki: "Fabrication of InGaAs Quantum Wires and Dots by Selective Molecular Beam Epitaxial Growth on Various Mesa-Patterned(001)InP Substrates" Japanese Journal of Applied Physics. 36. 1763-1769 (1997)

[Publications] H.Fujikura: "Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires Having Silicon Interlayer-Based Edge Passivation and Its Interpretation" Japanese Journal of Applied Physics. 36. 1937-1943 (1997)

[Publications] S.Kasai: "Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas" Japanese Journal of Applied Physics. 36. 1678-1685 (1997)

[Publications] H.Okada: "Observation of Coulomb Blockade Oscillations up to 50K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy in InP substrates" Japanese Journal of Applied Physics. 36. 1672-1677 (1997)

[Publications] T.Kudoh: "Controlled Formation of Metal-Semiconductor Interface to 2DEG Layer by In-Situ Electrochemical Process and Its Application to In-Plane Gated Electron Waveguide Devices" Applied Surface Science. 117/118. 342-346 (1997)

[Publications] M.Kihara: "Effect of Mis-Orientation of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy" Applied Surface Science. 117/118. 385-389 (1997)

[Publications] H.Hasegawa: "Excitation Power Dependent Photoluminescence Characterization of Insulator-Semiconductor Interfaces on Near Surface Quantum Structures Passivated Silicon Interface Control Layer Technology" Applied Surface Science. 117/118. 710-713 (1997)

[Publications] K.Ikeya: "Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control LAyer-Based Technique" Japanese Journal of Applied Physics. 36. 1756-1762 (1997)

[Publications] H.Fujikura: "Formation of Two-Dimensional Arrays of InP-Based InGaAs Quantum Dots on Patterned Substrates by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 36. 4092-4096 (1997)

[Publications] H.Okada: "Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires" Japanese Journal of Applied Physics. 36. 4156-4160 (1997)

[Publications] H.Hasegawa: "Evolution Mechanism of Nearly-Pinning Platinum/N-Type Indium Phosphide Interface with a High Schottky Barrier Height by In-Situ Electrochemical Process" Journal of Vacuum Science and Technology B. 15. 1227-1235 (1997)

[Publications] Y.Dohmae: "Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitor Having Silicon Interface Control Layer" Japanese Journal of Applied Physics. 36. 1834-1840 (1997)

[Publications] Y.Ishikawa: "Missing-dimer structures and their kink defects on molecular beam epitaxially grown(2x4)reconstructed(001)InP and GaAs surfaces studied by ultrahigh-vacuum scanning tunneling microscopy" Japanese Journal of Applied Physics. 36. 1749-1755 (1997)

[Publications] T.Sato: "Large Schottky Barrier Heghts on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process" Japanese Journal of Applied Physics. 36. 1811-1817 (1997)

[Publications] T.Hashizume: "Dominant Electron Trap with Metastable state in Molecular Beam Epitaxial GaAs Grown at Low Temperatures" Japanese Journal of Applied Physics. 36. 1775-1780 (1997)

[Publications] T.Yoshida: "Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si(111)Surfaces by Contactless Capacitance-Voltage and Photoluminescence Methods" Japanese Journal of Applied Physics. 36. 1453-1459 (1997)

[Publications] T.Jikimoto: "Photoemission Study of 6H-SiC(0001)Si face" Applied Surface Science. 117/118. 794 (1997)

[Publications] M.Hirai: "Investigation of metal/SiC interface using electron spectroscopy and scanning tunneling microscopy" Applied Surface Science. 113/114. 467 (1997)

[Publications] T.Loher: "Heteroepitaxial Growth of Lattice Mismatched Materials using Layered Compound Buffer Layers" Applied Surface Science. (1998)

[Publications] K.Ueno: "Fabrication of C_<60> Nanostructures by Selective Growth on GaSe/MoS_2 and InSe/MoS_2 Heterostructure Substrates" Applied Surface Science. (1998)

[Publications] K.Sasaki: "Nanostructure Fabrication Using Selective Growth on Nanosize Patterns Drawn by a Scanning Probe Microscope" Japanese Journal of Applied Physics. 36. 4061-4064 (1997)

[Publications] S.Niwa: "Energy relaxation of photo-excited hot electrons under an external electric field in a quasi-one dimensional structures" Physica Status Solidi(b). 204. 283-286 (1997)

[Publications] N.Sawaki: "Tunneling transfer and energy relaxation rate of photo-excited carriers in coupled quantum wells" Japanese Journal of Applied Physics. 36. 4008-4012 (1997)

[Publications] N.Sawaki: "Effect of carrier-carrier scattering on the tunneling and energy relaxation process in a coupled quantum well" Physica Status Solidi(b). 204. 423-426 (1997)

[Publications] Y.Yasuda: "Effects of H-termination on initial oxidation process" Applied Surface Science. 113/114. 579 (1997)

[Publications] K.Ohmori: "Initial oxidation of Si(100)-(2x1)H monohydride surfaces studies by scanning tunneling micro scopy/scanning tunneling spectroscopy" Applied Surface Science. 117/118. 114 (1997)

[Publications] Y.Matsumoto: "Advantages of the Asymmetric Tunnel Barrier for High Density Integration of Single Electron Devices" Japanese Journal of Applied Physics. 36. 4143-4146 (1997)

[Publications] M.Otabe: "Observation of Single Electron Charging Effects in Nanocrystalline Silicon at Room Temperature Using Atomic Force Microscopy" Applied Physics Letter. 72. (1998)

[Publications] Y.Kanemitsu: "Photoluminescnce Mechanism in Surface-Oxidized Silicon Nanocrystals" Physical Review B. 55. R7375-R7378 (1997)

[Publications] A.Dutta: "Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing" Japanese Journal of Applied Physics. 36. 4038-4041 (1997)

長谷川英機北海道大学, 工学研究科, 教授 (60001781)