1996 Fiscal Year Annual Research Report

単電子デバイスとその高密度集積化

Research Project

Project/Area Number	08247102
Research Category	Grant-in-Aid for Scientific Research on Priority Areas
Research Institution	Hokkaido University
Principal Investigator	長谷川英機北海道大学, 工学部, 教授 (60001781)
Co-Investigator(Kenkyū-buntansha)	難波進長崎総合科学大学, 工学部, 教授 (70029370) 菅野卓雄東洋大学, 工学部, 教授 (50010707) 川辺光央筑波大学, 物質工学系, 教授 (80029446) 榊裕之東京大学, 生産技術研究所, 教授 (90013226) 川村清慶応義塾大学, 理工学部, 教授 (00011619)
Keywords	単電子デバイス / 集積化 / 量子ドット / トンネル障壁 / ナノ構造 / 原子スケール制御
Research Abstract	本研究は、平成8〜11年度に設定された重点領域研究「単電子デバイスとの高密度集積化」に関して、総括班を構成し、研究の課題、進捗状況、成果について、点検と評価を行い、重点領域研究が最大限の成果を挙げるよう、指導・助言・企画調整を行うことを目的とする。本年度の活動実績を以下にまとめる。 <研究会> 第1回研究会平成8年10月16日、機械振興会館(東京)で開催した。主として第2班・第4班の公募研究について、これまでの成果および今後の研究計画の報告を受け、質疑討論を行った。第2回研究会平成8年11月4日から7日にわたり、北海道大学学術交流会館におて、国際会議、International Symposium on Formation, Physics and Device Applivation of Quantum Dot Stuctures (ODS'96)を行い、これを第2回の研究会とした。世界10カ国より、計170人が参加し、論文105件が発表された。このうち、本重点領域研究の計画研究・公募研究から60件の論文発表が行われた。第3回研究会平成9年1月20日〜21日にわたり、東京大学生産技術研究所で開催した。量子ドットの物理と単電子デバイスの回路応用についてチュートリアルを行うとともに、主として第1班・第3班の公募研究について、これまでの成果および今後の研究計画の報告を受け、質疑討論を行った。第4回研究会平成9年2月24日〜25日、機械振興会館(東京)で開催した。本重点領域研究の平成8年度研究成果報告会とし、計画研究27件、公募研究16件の成果報告が行われた。 <研究推進会議> 第1回研究推進会議平成8年10月16日、機械振興会館(東京)で開催した。主として第2班・第4班の公募研究について、今後の研究計画の討論を行った。第2回研究推進会議平成9年1月21日、東京大学生産技術研究所で開催した。主として第1班・第3班の公募研究について、今後の研究計画の討論を行った。 <総括班全体会議> 第1回を平成8年11月5日に京王プラザホテル(札幌市)で、また、第2回を平成9年2月24日に東京プリンスホテルで開催し、研究の課題、進捗状況、成果について、点検と評価を行った。

Research Products

(37 results)

All Other

All Publications (37 results)

[Publications] Y. Ishikawa: "Missing-dinner structures and their kink defects on molecular beam epitaxially grown (2×4) reconstruced (001) InP and GaAs surfaced studied by ultrahigh-vacuum scanning tunneling microscopy" Jpn. J. Appl. Phys.36 (3)印刷中. (1997)
[Publications] B. W. Yang: "″Properties of InAs_xP_<1-x> Layer Formed by P-As Exchanbe Reaction on (001) InP Surface Exposed to As_4 Beam″" Jounal of Electronic Materials. 25. 379-384 (1996)
[Publications] H. Fujikura: "″Fabrication of InP-Based InGaAs Ridge Quantum Wires Utilizing Selective Moleculat Beam Epitaxial Growth on (311) A Facets″" Jounal of Electronic Materials. 25. 619-625 (1996)
[Publications] S. Suzuki: "″A Novel Insulated Gate Technology for InGaAs High Electron Mobility Transistors Using Silicon Interlayer Based Passivation Technique″" Jounal of Electronic Materials. 25. 649-656 (1996)
[Publications] B. X. Yang: "″Scanning Tunneling Microscope Study of (001) InP Surface Prepared by Gas Source Molecular Beam Epitaxy″" Japanese Journal of Applied Physics. 35. 1267-1272 (1996)
[Publications] H. Fujikura: "″Photoluminescence and Cathodoluminescence Investigation of Uptical Properties of InP-Based InGaAs Ridge Quantum Wires Formed by Selective Molective Molecular Beam Epitaxy″" Japanese Journal of Applied Physics. 35. 1333-1339 (1996)
[Publications] S. Kasai: "Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers" Japanese Journal of Applied Physics. 1340-1347 (1996)
[Publications] S. Kasai: "Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates" Japanese Journal of Applied Physics. 35. 6652-6658 (1996)
[Publications] S. Uno: "0.86e V Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs" Japanese Journal of Applied Physics. 35. 1258-1263 (1996)
[Publications] M. Kihara: "″Effect of Mis-Orientation of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy″." Appl. Sur. Sci. 印刷中. (1997)
[Publications] K. Jinushi: "Novel GaAs-Based Single Electron Transistors with Schottky In-Plane Gates Operating up to 20K" Japanese Journal of Applied Physics. 35. 1132-1139 (1996)
[Publications] H. Fujikura: "Surface Passivation of In_<0.53>Ga_<0.47>As Ridge Quantum Wires Using Silicon Interface Control Layers" Journal of Vacuum Science and Technoligy. B-14. 2888-2894 (1996)
[Publications] H. Hasegawa: "Interface-controled Schottky barriers on InP and related materials" Solid-Stat Electronics. 印刷中. (1997)
[Publications] T. Hashizume: "Quantum Transport A Schottky In-Plane・Gate Controlled GaAs/AlGaAs Quantum Well Wires" Phisica B. 227. 42-45 (1996)
[Publications] H. Tomozawa: "Design and Fabrication of GaAs/AlGaAs Single Electron Transistors Based on In-Plane Schottky Gate Control of 2DEG" Phisica B. 227. 112-115 (1996)
[Publications] S. Shiobara: "Deep Level and Conduction Mechanism in Low-Temperature GaAs Grown by Motecular Beam Epitaxy" Japanese Journal of Applied Physics. 35. 1159-1164 (1996)
[Publications] 長谷川英機: "化合物半導体量子細線および量子ドットの製作" 光学. 25. 448-455 (1996)
[Publications] 長谷川英機: "化合物半導体量子構造表面のSi超薄膜界面制御層によるパッシベーション" 表面科学. 17. 567-574 (1996)
[Publications] 長谷川英機: "「InP系化合物半導体材料およびデバイスの新展開」" 「応用物理」. 65 (2). 108-118 (1996)
[Publications] M. Araki: "Formation of InGaAs/InAlAs Quantum Wires and Dots with Extremely Smooth Facets on Mesa-Patterned (001) InP Substrates by Selective Molecular Beam Enitaxv″" Jpn. J. Appl. Phys. 36 (3)印刷中. (1997)
[Publications] H. Fujikura: "″Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires Having Silicon Interlayer-Based Edge Passivation and Its Interpretation" Jpn. J. Appl. Phys.36 (3)印刷中. (1997)
[Publications] S. Kasai: "″Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Besed on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas21GC22:Jpn. J. Appl. Phys" 36 (3)印刷中. (1997)
[Publications] H. Okada: "Observation of Coulomb Blockade Type Conductance Oscvillations up to 50K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates," Jpn. J. Appl. Phys. 36 (3)印刷中. (1997)
[Publications] T. Sato: "Large Schottky Barrier Heights on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process." Jpn. J. Appl. Phys. 36 (3)印刷中. (1997)
[Publications] K. Kawamura: "Theory of single electron tunneling through a quantum dot dimer," Jpn. J. Appl. Phys. 36(印刷中). (1997)
[Publications] T. Mizuno: "Studies of charging effects on resonant tunneling diodes in terms of extended friedel sum rule" J. Phys Soc. Jap.65. 2594-2601 (1996)
[Publications] G. Yusa: "GaAs/n-AlGaAs fiels effect transistor with embedded InAs quantum traps and is programmable threshold characteristics," Electron. Lett. 32. 491-492 (1996)
[Publications] M. Narihiro: "Resonant tunneling of electrons via 20nm-scale InAs quantum dot and magnetotunneling spectroscopy of its electronic states," Appl. Phys. Lett. 70. 105-107 (1997)
[Publications] L. P. Kouwen boven: "High-frequency transport through mesoscopic structures" Surface Science. 361/362. 591-595 (1996)
[Publications] D. Dixon: "Linear and non-linear transport through coupled quantum dot" Surface Science. 361/362. 636-670 (1996)
[Publications] D. Dixon: "Influence of energy level alignment on tunneling between coupled quantum dots" Phys. Rev. B. 53. 12625-12631 (1996)
[Publications] Y. J. Chun: "The role of atomic hydrogen for formation of quantum dots by self-organizing process in MBE," Physica B. 227. 229-301 (1996)
[Publications] Y. J. Chun: "Array of self-organized InGaAs quantum dots on GaAs (311) substrates by atomic hydrogen-assisted molecular beam epitaxy," Jpn. J. Appl. Phys. 35. L1075-1077 (1996)
[Publications] Y. J. Chun: "Surfactant effects of atomic hydrogen on low-temperature growth of InAs on InP" Jpn. J. Appl. Phys. 35. L1689-1692 (1996)
[Publications] M. Kawabe: "Formation of high density quantum dot array by molecular beam epitaxy" Jpn. J. Appl. Phys.36(印刷中). (1997)
[Publications] "Collected Abstracts of 1996 International Symposium on Formation, Physics snd Devia Application of Quantum Dot Structures" Hideki Hasegawa, 214 (1996)
[Publications] "単電子デバイスとその高密度集積化平成8年度成果報告書" 長谷川英機, 178 (1997)

1996 Fiscal Year Annual Research Report

単電子デバイスとその高密度集積化

Principal Investigator

長谷川 英機 北海道大学, 工学部, 教授 (60001781)

Research Products

[Publications] Y. Ishikawa: "Missing-dinner structures and their kink defects on molecular beam epitaxially grown (2×4) reconstruced (001) InP and GaAs surfaced studied by ultrahigh-vacuum scanning tunneling microscopy" Jpn. J. Appl. Phys.36 (3)印刷中. (1997)

[Publications] B. W. Yang: "″Properties of InAs_xP_<1-x> Layer Formed by P-As Exchanbe Reaction on (001) InP Surface Exposed to As_4 Beam″" Jounal of Electronic Materials. 25. 379-384 (1996)

[Publications] H. Fujikura: "″Fabrication of InP-Based InGaAs Ridge Quantum Wires Utilizing Selective Moleculat Beam Epitaxial Growth on (311) A Facets″" Jounal of Electronic Materials. 25. 619-625 (1996)

[Publications] S. Suzuki: "″A Novel Insulated Gate Technology for InGaAs High Electron Mobility Transistors Using Silicon Interlayer Based Passivation Technique″" Jounal of Electronic Materials. 25. 649-656 (1996)

[Publications] B. X. Yang: "″Scanning Tunneling Microscope Study of (001) InP Surface Prepared by Gas Source Molecular Beam Epitaxy″" Japanese Journal of Applied Physics. 35. 1267-1272 (1996)

[Publications] H. Fujikura: "″Photoluminescence and Cathodoluminescence Investigation of Uptical Properties of InP-Based InGaAs Ridge Quantum Wires Formed by Selective Molective Molecular Beam Epitaxy″" Japanese Journal of Applied Physics. 35. 1333-1339 (1996)

[Publications] S. Kasai: "Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers" Japanese Journal of Applied Physics. 1340-1347 (1996)

[Publications] S. Kasai: "Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates" Japanese Journal of Applied Physics. 35. 6652-6658 (1996)

[Publications] S. Uno: "0.86e V Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs" Japanese Journal of Applied Physics. 35. 1258-1263 (1996)

[Publications] M. Kihara: "″Effect of Mis-Orientation of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy″." Appl. Sur. Sci. 印刷中. (1997)

[Publications] K. Jinushi: "Novel GaAs-Based Single Electron Transistors with Schottky In-Plane Gates Operating up to 20K" Japanese Journal of Applied Physics. 35. 1132-1139 (1996)

[Publications] H. Fujikura: "Surface Passivation of In_<0.53>Ga_<0.47>As Ridge Quantum Wires Using Silicon Interface Control Layers" Journal of Vacuum Science and Technoligy. B-14. 2888-2894 (1996)

[Publications] H. Hasegawa: "Interface-controled Schottky barriers on InP and related materials" Solid-Stat Electronics. 印刷中. (1997)

[Publications] T. Hashizume: "Quantum Transport A Schottky In-Plane・Gate Controlled GaAs/AlGaAs Quantum Well Wires" Phisica B. 227. 42-45 (1996)

[Publications] H. Tomozawa: "Design and Fabrication of GaAs/AlGaAs Single Electron Transistors Based on In-Plane Schottky Gate Control of 2DEG" Phisica B. 227. 112-115 (1996)

[Publications] S. Shiobara: "Deep Level and Conduction Mechanism in Low-Temperature GaAs Grown by Motecular Beam Epitaxy" Japanese Journal of Applied Physics. 35. 1159-1164 (1996)

[Publications] 長谷川英機: "化合物半導体量子細線および量子ドットの製作" 光学. 25. 448-455 (1996)

[Publications] 長谷川英機: "化合物半導体量子構造表面のSi超薄膜界面制御層によるパッシベーション" 表面科学. 17. 567-574 (1996)

[Publications] 長谷川英機: "「InP系化合物半導体材料およびデバイスの新展開」" 「応用物理」. 65 (2). 108-118 (1996)

[Publications] M. Araki: "Formation of InGaAs/InAlAs Quantum Wires and Dots with Extremely Smooth Facets on Mesa-Patterned (001) InP Substrates by Selective Molecular Beam Enitaxv″" Jpn. J. Appl. Phys. 36 (3)印刷中. (1997)

[Publications] H. Fujikura: "″Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires Having Silicon Interlayer-Based Edge Passivation and Its Interpretation" Jpn. J. Appl. Phys.36 (3)印刷中. (1997)

[Publications] S. Kasai: "″Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Besed on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas21GC22:Jpn. J. Appl. Phys" 36 (3)印刷中. (1997)

[Publications] H. Okada: "Observation of Coulomb Blockade Type Conductance Oscvillations up to 50K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates," Jpn. J. Appl. Phys. 36 (3)印刷中. (1997)

[Publications] T. Sato: "Large Schottky Barrier Heights on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process." Jpn. J. Appl. Phys. 36 (3)印刷中. (1997)

[Publications] K. Kawamura: "Theory of single electron tunneling through a quantum dot dimer," Jpn. J. Appl. Phys. 36(印刷中). (1997)

[Publications] T. Mizuno: "Studies of charging effects on resonant tunneling diodes in terms of extended friedel sum rule" J. Phys Soc. Jap.65. 2594-2601 (1996)

[Publications] G. Yusa: "GaAs/n-AlGaAs fiels effect transistor with embedded InAs quantum traps and is programmable threshold characteristics," Electron. Lett. 32. 491-492 (1996)

[Publications] M. Narihiro: "Resonant tunneling of electrons via 20nm-scale InAs quantum dot and magnetotunneling spectroscopy of its electronic states," Appl. Phys. Lett. 70. 105-107 (1997)

[Publications] L. P. Kouwen boven: "High-frequency transport through mesoscopic structures" Surface Science. 361/362. 591-595 (1996)

[Publications] D. Dixon: "Linear and non-linear transport through coupled quantum dot" Surface Science. 361/362. 636-670 (1996)

[Publications] D. Dixon: "Influence of energy level alignment on tunneling between coupled quantum dots" Phys. Rev. B. 53. 12625-12631 (1996)

[Publications] Y. J. Chun: "The role of atomic hydrogen for formation of quantum dots by self-organizing process in MBE," Physica B. 227. 229-301 (1996)

[Publications] Y. J. Chun: "Array of self-organized InGaAs quantum dots on GaAs (311) substrates by atomic hydrogen-assisted molecular beam epitaxy," Jpn. J. Appl. Phys. 35. L1075-1077 (1996)

[Publications] Y. J. Chun: "Surfactant effects of atomic hydrogen on low-temperature growth of InAs on InP" Jpn. J. Appl. Phys. 35. L1689-1692 (1996)

[Publications] M. Kawabe: "Formation of high density quantum dot array by molecular beam epitaxy" Jpn. J. Appl. Phys.36(印刷中). (1997)

[Publications] "Collected Abstracts of 1996 International Symposium on Formation, Physics snd Devia Application of Quantum Dot Structures" Hideki Hasegawa, 214 (1996)

[Publications] "単電子デバイスとその高密度集積化平成8年度成果報告書" 長谷川英機, 178 (1997)

長谷川英機北海道大学, 工学部, 教授 (60001781)