1997 Fiscal Year Annual Research Report

単電子デバイスとその高密度集積化

Research Project

Project/Area Number	08247102
Research Institution	Hokkaido University
Principal Investigator	長谷川英機北海道大学, 工学研究科, 教授 (60001781)
Co-Investigator(Kenkyū-buntansha)	難波進長崎総合科学大学, 工学部, 教授 (70029370) 菅野卓雄東洋大学, 工学部, 教授 (50010707) 川辺光央筑波大学, 物質工学系, 教授 (80029446) 榊裕之東京大学, 生産技術研究所, 教授 (90013226) 川村清慶応義塾大学, 理工学部, 教授 (00011619)
Keywords	単電子デバイス / ナノ構造 / 表面・界面 / トンネル障壁 / 量子ドット / 原子スケール制御 / 高密度集積化
Research Abstract	本研究は、平成8〜11年度に設定された重点領域研究1単電子デバイスとその高密度集積化」に関して、総括班を構成し、研究の課題、進捗状況、成果について、点検と評価を行い、重点領域研究が最大限の成果を挙げるよう、指導・助言・企画調整を行うことを目的とする。本年度の活動実績を以下にまとめる。 <研究会> 第1回研究会:平成9年8月21〜22日にわたり、テルメインターナショナルホテル札幌で開催した。結晶成長による立体量子構造の形成と単電子デバイスの回路応用について2件のチュートリアルを行うと共に、第2班・第4班を中心に22件の研究発表が行われた。第2回研究会:平成9年10月23日〜24日にわたり、東京大学物性研究所および生産技術研究所で開催した。物理、回路応用および微小ジョセフソン接合について3件のチュートリアルを行うと共に、第1班・第3班を中心に17件の研究発表が行われた。第3回研究会:平成10年1月26日〜27日にわたり、名古屋大学ベンチャービジネスラボラトリ-で開催した。単電子デバイスの現状と問題点およびVLSlMOSデバイスの将来展望についてチュートリアルを行うとともに、23件の研究発表が行われた。第4回研究会:平成10年3月5日〜6日にわたり、弘済会館(東京)で開催した。本重点領域研究の平成9年度研究成果報告会とし、計画研究27件、公募研究22件の成果報告が行われた。 <研究推進会議> 第1回をテルメインターナショナルホテル札幌(平成9年8月22日)、第2回を東京大学物性研究所(平成9年10月24日)、第3回を名古屋大学ベンチャービジネスラボラトリ-(平成10年1月27日)、第4回を弘済会館(東京、平成10年3月6日)において開催し、各班の研究計画、研究協力体制、9年度の研究会開催、次年度の研究体制について討論した。 <総括班全体会議> 平成10年3月5日にホテルニューオ-タニ(東京)で開催し、研究の課題、進捗状況、成果について、点検と評価を行った。

Research Products
(45 results)

All Other

All Publications (45 results)

[Publications] Y.Hanada: "Direct Formation of InGaAs Coupled Wire-Dot Structures by Selective Molecular Beam Epitaxy on InP Patterned Substrates" Solid State Electronics. 印刷中. (1998)
[Publications] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE" Solid State Electronics. 印刷中. (1998)
[Publications] T.Hashizume: "In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown(2x4)GaAs Surfaces" Japanese Journal of Applied Physics. 印刷中. (1998)
[Publications] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based InGaAs Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 印刷中. (1998)
[Publications] B.Adamowicz: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface Recombination Velocity" Japanese Journal of Applied Physics. 印刷中. (1998)
[Publications] N.Tsurumi: "In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs(001)-(2x4)Surface" Japanese Journal of Applied Physics. 印刷中. (1998)
[Publications] Y.Satoh: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. 印刷中. (1998)
[Publications] H.Hasegawa: "Electrochemical Formation and Characterization of In-Plane and Wrap Gate Structures for Realization of GaAs-and InP-Based Quantum Wires and Dots" Applied Surface Science. 123/124. (1998)
[Publications] T.Hashizume: "Surface Passivation of GaAs with Ultrathin Si_3N_4/Si Inter-face Control Layer Formed by In-Situ ECR Plasma Nitridation" Applied Surface Science. 123/124. (1998)
[Publications] H.Takahashi: "Novel InP Metal-Insulator-Semiconductor Structure Having Ultrathin Silicon Interface Control Layer" Applied Surface Science. 123/124. (1998)
[Publications] H.Hasegawa: "Interface-Controlled Schottky Barriers on InP and Related Materials" Solid State Electronics. 41. 1441-1450 (1998)
[Publications] S.Suzuki: "Fabrication and Electrical Characterization of InP-Based Insulated Gate Power HEMTs Using Ultrathin Si Interface Control Layer" Solid State Electronics. 41. 1641-1646 (1998)
[Publications] B.Adamowicz: "Photoluminescence Characterization of Air Exposed AlGaAs Surface and Passivated Ex-Situ by Ultrathin Silicon Interface Control Laye" Physica E. (1998)
[Publications] H.Hasegawa: "Formation of InP-Based Quantum Sttuctures by Selective MBE on Patterned Substrates Having High-Index Facets" Microelectronics Journal. 28. 887-901 (1997)
[Publications] M.Araki: "Fabrication of InGaAs Quantum Wires and Dots by Selective Molecular Beam Epitaxial Growth on Various Mesa-Patterned(001)InP Substrates" Japanese Journal of Applied Physics. 36. 1763-1769 (1997)
[Publications] H.Fujikura: "Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires Having Silicon Interlayer-Based Edge Passivation and Its Interpretation" Japanese Journal of Applied Physics. 36. 1937-1943 (1997)
[Publications] S.Kasai: "Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas" Japanese Journal of Applied Physics. 36. 1678-1685 (1997)
[Publications] H.Okada: "Observation of Coulomb Blockade Oscillations up to 50K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy in InP substrates" Japanese Journal of Applied Physics. 36. 1672-1677 (1997)
[Publications] T.Kudoh: "Controlled Formation of Metal-Semiconductor Interface to 2DEG Layer by In-Situ Electrochemical Process and Its Application to In-Plane Gated Electron Waveguide Devices" Applied Surface Science. 117/118. 342-346 (1997)
[Publications] M.Kihara: "Effect of Mis-Orientation of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy" Applied Surface Science. 117/118. 385-389 (1997)
[Publications] H.Hasegawa: "Excitation Power Dependent Photoluminescence Characterization of Insulator-Semiconductor Interfaces on Near Surface Quantum Structures Passivated Silicon Interface Control Layer Technology" Applied Surface Science. 117/118. 710-713 (1997)
[Publications] K.Ikeya: "Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control LAyer-Based Technique" Japanese Journal of Applied Physics. 36. 1756-1762 (1997)
[Publications] H.Fujikura: "Formation of Two-Dimensional Arrays of InP-Based InGaAs Quantum Dots on Patterned Substrates by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 36. 4092-4096 (1997)
[Publications] H.Okada: "Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires" Japanese Journal of Applied Physics. 36. 4156-4160 (1997)
[Publications] Y.Ishikawa: "Kink defects and fermi level pinning on(2x4)reconstructed molecular beam epitaxially grown surfaces of GaAs and InP studied by ultrahigh-vacuum scanning tunneling microscopy and X-ray photoelectron spectroscopy" Journal of Vacuum Science and Technology B. 15. 1163-1172 (1997)
[Publications] H.Hasegawa: "Evolution Mechanism of Nearly-Pinning Platinum/N-Type Indium Phosphide Interface with a High Schottky Barrier Height by In-Situ Electrochemical Process" Journal of Vacuum Science and Technology B. 15. 1227-1235 (1997)
[Publications] Y.Dohmae: "Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitor Having Silicon Interface Control Layer" Japanese Journal of Applied Physics. 36. 1834-1840 (1997)
[Publications] Y.Ishikawa: "Missing-dimer structures and their kink defects on molecular beam epitaxially grown(2x4)reconstructed(001)InP and GaAs surfaces studied by ultrahigh-vacuum scanning tunneling microscopy" Japanese Journal of Applied Physics. 36. 1749-1755 (1997)
[Publications] T.Sato: "Large Schottky Barrier Heghts on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process" Japanese Journal of Applied Physics. 36. 1811-1817 (1997)
[Publications] T.Hashizume: "Dominant Electron Trap with Metastable state in Molecular Beam Epitaxial GaAs Grown at Low Temperatures" Japanese Journal of Applied Physics. 36. 1775-1780 (1997)
[Publications] T.Yoshida: "Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si(111)Surfaces by Contactless Capacitance-Voltage and Photoluminescence Methods" Japanese Journal of Applied Physics. 36. 1453-1459 (1997)
[Publications] T.Jikimoto: "Photoemission Study of 6H-SiC(0001)Si face" Applied Surface Science. 117/118. 794 (1997)
[Publications] M.Hirai: "Investigation of metal/SiC interface using electron spectroscopy and scanning tunneling microscopy" Applied Surface Science. 113/114. 467 (1997)
[Publications] T.Loher: "Heteroepitaxial Growth of Lattice Mismatched Materials using Layered Compound Buffer Layers" Applied Surface Science. (1998)
[Publications] K.Ueno: "Fabrication of C_<60> Nanostructures by Selective Growth on GaSe/MoS_2 and InSe/MoS_2 Heterostructure Substrates" Applied Surface Science. (1998)
[Publications] K.Sasaki: "Nanostructure Fabrication Using Selective Growth on Nanosize Patterns Drawn by a Scanning Probe Microscope" Japanese Journal of Applied Physics. 36. 4061-4064 (1997)
[Publications] S.Niwa: "Energy relaxation of photo-excited hot electrons under an external electric field in a quasi-one dimensional structures" Physica Status Solidi(b). 204. 283-286 (1997)
[Publications] N.Sawaki: "Tunneling transfer and energy relaxation rate of photo-excited carriers in coupled quantum wells" Japanese Journal of Applied Physics. 36. 4008-4012 (1997)
[Publications] N.Sawaki: "Effect of carrier-carrier scattering on the tunneling and energy relaxation process in a coupled quantum well" Physica Status Solidi(b). 204. 423-426 (1997)
[Publications] Y.Yasuda: "Effects of H-termination on initial oxidation process" Applied Surface Science. 113/114. 579 (1997)
[Publications] K.Ohmori: "Initial oxidation of Si(100)-(2x1)H monohydride surfaces studies by scanning tunneling micro scopy/scanning tunneling spectroscopy" Applied Surface Science. 117/118. 114 (1997)
[Publications] Y.Matsumoto: "Advantages of the Asymmetric Tunnel Barrier for High Density Integration of Single Electron Devices" Japanese Journal of Applied Physics. 36. 4143-4146 (1997)
[Publications] M.Otabe: "Observation of Single Electron Charging Effects in Nanocrystalline Silicon at Room Temperature Using Atomic Force Microscopy" Applied Physics Letter. 72. (1998)
[Publications] Y.Kanemitsu: "Photoluminescnce Mechanism in Surface-Oxidized Silicon Nanocrystals" Physical Review B. 55. R7375-R7378 (1997)
[Publications] A.Dutta: "Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing" Japanese Journal of Applied Physics. 36. 4038-4041 (1997)

1997 Fiscal Year Annual Research Report

単電子デバイスとその高密度集積化

Principal Investigator

長谷川 英機 北海道大学, 工学研究科, 教授 (60001781)

Research Products

[Publications] Y.Hanada: "Direct Formation of InGaAs Coupled Wire-Dot Structures by Selective Molecular Beam Epitaxy on InP Patterned Substrates" Solid State Electronics. 印刷中. (1998)

[Publications] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE" Solid State Electronics. 印刷中. (1998)

[Publications] T.Hashizume: "In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown(2x4)GaAs Surfaces" Japanese Journal of Applied Physics. 印刷中. (1998)

[Publications] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based InGaAs Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 印刷中. (1998)

[Publications] B.Adamowicz: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface Recombination Velocity" Japanese Journal of Applied Physics. 印刷中. (1998)

[Publications] N.Tsurumi: "In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs(001)-(2x4)Surface" Japanese Journal of Applied Physics. 印刷中. (1998)

[Publications] Y.Satoh: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. 印刷中. (1998)

[Publications] H.Hasegawa: "Electrochemical Formation and Characterization of In-Plane and Wrap Gate Structures for Realization of GaAs-and InP-Based Quantum Wires and Dots" Applied Surface Science. 123/124. (1998)

[Publications] T.Hashizume: "Surface Passivation of GaAs with Ultrathin Si_3N_4/Si Inter-face Control Layer Formed by In-Situ ECR Plasma Nitridation" Applied Surface Science. 123/124. (1998)

[Publications] H.Takahashi: "Novel InP Metal-Insulator-Semiconductor Structure Having Ultrathin Silicon Interface Control Layer" Applied Surface Science. 123/124. (1998)

[Publications] H.Hasegawa: "Interface-Controlled Schottky Barriers on InP and Related Materials" Solid State Electronics. 41. 1441-1450 (1998)

[Publications] S.Suzuki: "Fabrication and Electrical Characterization of InP-Based Insulated Gate Power HEMTs Using Ultrathin Si Interface Control Layer" Solid State Electronics. 41. 1641-1646 (1998)

[Publications] B.Adamowicz: "Photoluminescence Characterization of Air Exposed AlGaAs Surface and Passivated Ex-Situ by Ultrathin Silicon Interface Control Laye" Physica E. (1998)

[Publications] H.Hasegawa: "Formation of InP-Based Quantum Sttuctures by Selective MBE on Patterned Substrates Having High-Index Facets" Microelectronics Journal. 28. 887-901 (1997)

[Publications] M.Araki: "Fabrication of InGaAs Quantum Wires and Dots by Selective Molecular Beam Epitaxial Growth on Various Mesa-Patterned(001)InP Substrates" Japanese Journal of Applied Physics. 36. 1763-1769 (1997)

[Publications] H.Fujikura: "Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires Having Silicon Interlayer-Based Edge Passivation and Its Interpretation" Japanese Journal of Applied Physics. 36. 1937-1943 (1997)

[Publications] S.Kasai: "Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas" Japanese Journal of Applied Physics. 36. 1678-1685 (1997)

[Publications] H.Okada: "Observation of Coulomb Blockade Oscillations up to 50K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy in InP substrates" Japanese Journal of Applied Physics. 36. 1672-1677 (1997)

[Publications] T.Kudoh: "Controlled Formation of Metal-Semiconductor Interface to 2DEG Layer by In-Situ Electrochemical Process and Its Application to In-Plane Gated Electron Waveguide Devices" Applied Surface Science. 117/118. 342-346 (1997)

[Publications] M.Kihara: "Effect of Mis-Orientation of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy" Applied Surface Science. 117/118. 385-389 (1997)

[Publications] H.Hasegawa: "Excitation Power Dependent Photoluminescence Characterization of Insulator-Semiconductor Interfaces on Near Surface Quantum Structures Passivated Silicon Interface Control Layer Technology" Applied Surface Science. 117/118. 710-713 (1997)

[Publications] K.Ikeya: "Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control LAyer-Based Technique" Japanese Journal of Applied Physics. 36. 1756-1762 (1997)

[Publications] H.Fujikura: "Formation of Two-Dimensional Arrays of InP-Based InGaAs Quantum Dots on Patterned Substrates by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 36. 4092-4096 (1997)

[Publications] H.Okada: "Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires" Japanese Journal of Applied Physics. 36. 4156-4160 (1997)

[Publications] H.Hasegawa: "Evolution Mechanism of Nearly-Pinning Platinum/N-Type Indium Phosphide Interface with a High Schottky Barrier Height by In-Situ Electrochemical Process" Journal of Vacuum Science and Technology B. 15. 1227-1235 (1997)

[Publications] Y.Dohmae: "Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitor Having Silicon Interface Control Layer" Japanese Journal of Applied Physics. 36. 1834-1840 (1997)

[Publications] Y.Ishikawa: "Missing-dimer structures and their kink defects on molecular beam epitaxially grown(2x4)reconstructed(001)InP and GaAs surfaces studied by ultrahigh-vacuum scanning tunneling microscopy" Japanese Journal of Applied Physics. 36. 1749-1755 (1997)

[Publications] T.Sato: "Large Schottky Barrier Heghts on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process" Japanese Journal of Applied Physics. 36. 1811-1817 (1997)

[Publications] T.Hashizume: "Dominant Electron Trap with Metastable state in Molecular Beam Epitaxial GaAs Grown at Low Temperatures" Japanese Journal of Applied Physics. 36. 1775-1780 (1997)

[Publications] T.Yoshida: "Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si(111)Surfaces by Contactless Capacitance-Voltage and Photoluminescence Methods" Japanese Journal of Applied Physics. 36. 1453-1459 (1997)

[Publications] T.Jikimoto: "Photoemission Study of 6H-SiC(0001)Si face" Applied Surface Science. 117/118. 794 (1997)

[Publications] M.Hirai: "Investigation of metal/SiC interface using electron spectroscopy and scanning tunneling microscopy" Applied Surface Science. 113/114. 467 (1997)

[Publications] T.Loher: "Heteroepitaxial Growth of Lattice Mismatched Materials using Layered Compound Buffer Layers" Applied Surface Science. (1998)

[Publications] K.Ueno: "Fabrication of C_<60> Nanostructures by Selective Growth on GaSe/MoS_2 and InSe/MoS_2 Heterostructure Substrates" Applied Surface Science. (1998)

[Publications] K.Sasaki: "Nanostructure Fabrication Using Selective Growth on Nanosize Patterns Drawn by a Scanning Probe Microscope" Japanese Journal of Applied Physics. 36. 4061-4064 (1997)

[Publications] S.Niwa: "Energy relaxation of photo-excited hot electrons under an external electric field in a quasi-one dimensional structures" Physica Status Solidi(b). 204. 283-286 (1997)

[Publications] N.Sawaki: "Tunneling transfer and energy relaxation rate of photo-excited carriers in coupled quantum wells" Japanese Journal of Applied Physics. 36. 4008-4012 (1997)

[Publications] N.Sawaki: "Effect of carrier-carrier scattering on the tunneling and energy relaxation process in a coupled quantum well" Physica Status Solidi(b). 204. 423-426 (1997)

[Publications] Y.Yasuda: "Effects of H-termination on initial oxidation process" Applied Surface Science. 113/114. 579 (1997)

[Publications] K.Ohmori: "Initial oxidation of Si(100)-(2x1)H monohydride surfaces studies by scanning tunneling micro scopy/scanning tunneling spectroscopy" Applied Surface Science. 117/118. 114 (1997)

[Publications] Y.Matsumoto: "Advantages of the Asymmetric Tunnel Barrier for High Density Integration of Single Electron Devices" Japanese Journal of Applied Physics. 36. 4143-4146 (1997)

[Publications] M.Otabe: "Observation of Single Electron Charging Effects in Nanocrystalline Silicon at Room Temperature Using Atomic Force Microscopy" Applied Physics Letter. 72. (1998)

[Publications] Y.Kanemitsu: "Photoluminescnce Mechanism in Surface-Oxidized Silicon Nanocrystals" Physical Review B. 55. R7375-R7378 (1997)

[Publications] A.Dutta: "Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing" Japanese Journal of Applied Physics. 36. 4038-4041 (1997)

長谷川英機北海道大学, 工学研究科, 教授 (60001781)