1998 Fiscal Year Annual Research Report

単電子デバイスとその高密度集積化

Research Project

Project/Area Number	08247102
Research Institution	Hokkaido University
Principal Investigator	長谷川英機北海道大学, 工学研究科, 教授 (60001781)
Co-Investigator(Kenkyū-buntansha)	難波進長崎総合科学大学, 工学部, 教授 (70029370) 菅野卓雄東洋大学, 工学部, 教授 (50010707) 川辺光央筑波大学, 物質工学系, 教授 (80029446) 榊裕之東京大学, 生産技術研究所, 教授 (90013226) 川村清慶應義塾大学, 理工学部, 教授 (00011619)
Keywords	単電子デバイス / ナノ構造 / 表面・界面 / トンネル障壁 / 量子ドット / 高密度集積化
Research Abstract	本研究は、平成8〜11年度に設定された特定領域研究(A)「単電子デバイスとその高密度集積化」に関して、総括班を構成し、研究の課題、進捗状況、成果について、点検と評価を行い、特定領域研究が最大限の成果を挙げるよう、指導・助言・企画調整を行うことを目的とする。本年度の活動実績を以下にまとめる。 <研究会> 第1回研究会(国際シンポジウム):平成10年5月31〜6月4日にわたり、北海道大学学術交流会館(札幌)で、国際シンポジウム(1998 International Symposium on Formation,Physics and Device Application of Quantum DotStructures(QDS'98))として開催した。国内外より157名が参加し、93件(招待論文:18件、投稿論文:75件)の論文発表が行われた。第2回研究会:平成10年10月29日〜30日にわたり、東京大学物性研究所で開催した。シリコン単電子デバイスと光支援量子輸送現象について2件のチュートリアルを行うと共に、17件の研究発表会が行なわれた。第3回研究会:平成11年1月25日〜26日にわたり、筑波大学ベンチャービジネスラボラトリーで開催した。単電子輸送、量子井戸中のホットエレクトロン、結晶表面の物理についてチュートリアルを行うとともに、平成10年度の成果報告として22件の研究発表が行われた。第4回研究会:平成11年2月22日〜23日にわたり、弘済会館(東京)で開催した。量子ドット中のキャリア緩和とシリコン単電子メモリについてチュートリアルを行うとともに、平成10年度の成果報告として32件の研究発表が行われた。 <研究推進会議> 第1回を東京大学物性研究所(平成10年10月30日)、第2回を筑波大学ベンチャービジネスラボラトリー(平成11年1月26日)、第3回を弘済会館(東京、平成11年2月23日)において開催し、各班の研究計画、研究協力体制、10年度の研究会開催、次年度の研究体制について討論した。 <総括班全体会議> 平成11年2月22日にホテルニューオータニ(東京)で開催し、研究の課題、進捗状況、研究組織、成果のとりまとめについて,点検と評価を行った。

Research Products

(42 results)

All Other

All Publications (42 results)

[Publications] H.Hasegawa: "Electrochemical formation and characterization of Schottky in-plane and wrap gate structure for realization of GaAs- and InP-based quantum wires and dots" Applied Surface Science. 123/124. 335 (1998)
[Publications] T.Hashizume: "Surface passivation of GaAs with ultrathin Si_3Ni_4/Si interface control layer formed by MBE and in situ ECR plasma nitridation" Applied Surface Science. 123/124. 599 (1998)
[Publications] H.Takahashi: "Novel InP metal-insulator-semiconductor structure having an ultrathin silicon interface control layer"" Applied Surface Science. 123/124. 615 (1998)
[Publications] B.Adamowicz: "Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer" Physica E. 2. 261 (1998)
[Publications] N.Tsurumi: "In-Situ Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs(001)-(2x4) Surface" Japanese Journal of Applied Physics. 37. 1501 (1998)
[Publications] Y.Satoh: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. 37. 1584 (1998)
[Publications] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based In_<0.53>Ga_<0.47>As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 37. 1532 (1998)
[Publications] T.Hashizume: "In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2x4) GaAs Surfaces" Japanese Journal of Applied Physics. 37. 1626 (1998)
[Publications] B.Adamowicz: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surface and Behavior of Surface Recombination Velocity" Japanese Journal of Applied Physics. 37. 1631 (1998)
[Publications] Y.Hanada: "Direct Formation of InGaAs Coupled Quantum Wire-Dot Structures by Selective Molecular Beam Expitaxy on InP Patterned Substrates" Solid Staate Electronics. 42. 1413 (1998)
[Publications] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Redge Quantum Wire Grown by Selective MBE" Solid State Electronics. 42. 1419 (1998)
[Publications] S.Chakraborty: "Formation of ultrathin oxynitride layers on Si (100) by low-temperature electron cyclotron resonance N_2O plasma oxynitridation process" Journal of Vacuum Science and Technology. B16. 2159 (1998)
[Publications] Y.Ishikawa: "Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic structure and Fermi level pinning on GaAs (110) surfaces grown by molecular beam epitaxy" Journal of Vacuum Science and Technology. B16. 2387 (1998)
[Publications] Y.Sato: "Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Three Schottky Wrap Gates" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] H.Fujikura: "Control of Dot Size and Tunneling Barrier Profile in In_<0.53>Ga_<0.47>As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] T.Muranaka: "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] H.Fujikura: "Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] M.B.Takeyama: "Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] T.Sato: "Strong Correlation Between Interface Microstructure and Barrier Height in n-InP Schottky Contacts Formed by In Situ Electrochemical Process" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] C.Kaneshiro: "Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] H.Takahashi: "XPS and Contactless C-V Characterization of Novel Oxide-Free InP Passivation Process Using Silicon Surface Quantum Well" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] H.Fujikura: "Formation of Highly Uniform InGaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy on Novel InP Patterned Substrates" Thin Solid Film. (in press). (1999)
[Publications] H.Fujikura: "Selective MBE Growth Quantum Wire-Dot Coupled Structures with Novel High Index Facets for InGaAs Single Electron Transistor Arrays" Microelectronics. (in press). (1999)
[Publications] J.Nakamura: "Transport Properties of Schottky In-Plane-Gate GaAs Single and Coupled Quantum Wire Transistors" IOP conference series. (in press). (1999)
[Publications] N.Ono: "N.Ono. H.Fujikura and H.Hasegawa : “Study of Selective MBE Growth on Patterned (001) InP Substrates Toward Realization of <100>-Oriented InGaAs Ridge Quantum Wires" IOP conference seriesc. (in press). (1999)
[Publications] C.Kaneshiro: "Realization of Strongly Metal-Deppendent Schottky Barrier Heights on n-GaAs by In Situ Electrochemical Process" IOP conference series. (in press). (1999)
[Publications] T.Muranaka: "Realization of InP-Based InGaAs Single Electron Transistors on Wires and Dots by Selective MBE" Microelectronic Engineering. (in press). (1999)
[Publications] H.Okada: "GaAs-Based Single Electron Logic and Memory Devices Using Electro-Deposited Nanometer Schottky Gates" Microelectronic Engineering. (in press). (1999)
[Publications] H.Sai: "Growth of Device Quality InGaAs/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy using Tertiarybutylphosphine" Solid State Electronics. (in press). (1999)
[Publications] H.Sai: "Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of Tertiaryphosphine-Based Molecular Beam Epitaxial Growth of In_<0.48>Ga_<0.52>P on GaAs" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] H.Sai: "H.Sai. H.Fujikura and H.Hasegawa : “Gas Source Molecular Beam Epitaxial Growth of In_<1-x>Ga_xP on GaAs Using Tertiarybutylphosphine" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] H.Hasegawa: "Properties of Metal-Semiconductor Interfaces Formed on n-type GaN" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] T.Sato: "Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Depositionc" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] T.Yoshida: "A Novel Non-Destructive Characterization Method of Electronic Properies of Pre- and Post-Processing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] M.Mutoh: "Effects of Surface Reconstruction on Silicon Interface Control Layer Based Passivation of (001) GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System" Japanese Journal of Applied Physics. 38(in press). (1999)
[Publications] H.Takahashi,: "In-situ Characterization Technique of Compound Semiconductor Hetrostructure Growth and Device Processing Steps Based on UHV Contactless Capacitance-Voltage Measurement" Solid-State Electron.(in press). (1999)
[Publications] Y.Koyama: "Formation Processes and Properties of Schottky and Ohmic Contacts on n-type GaN form Field Effect Transistor Applications" Solid-State Electron.(in press). (1999)
[Publications] A.Hamamatsu: "A.Hamamatsu, C.Kaneshiro, H.Fujikura and H.Hasegawa,“Formation of <001>-Aligned Nano-Scale Pores on (001) n-InP Surfaces by Photoelectrochemical Anodization in HCl"" Journal of Electroanalytical Chemistry. (in press). (1999)
[Publications] K.Kawamura: "Theory of artificial atoms and molecules usining semiconductor quantum dots" Japanese Journal of Applied Physics. 38. 366 (1999)
[Publications] M.Kawabe: "Self-organization of high-density III-V quantum dots on high-index substrates" Japanese Journal of Applied Physics. 38. 491 (1999)
[Publications] G.Yusa: "Trapping of a single photogenerated hole by an InAs quantum dot in GaAs/n-AlGaAs quantum trap FET and its spectral response in the near infrared regime" Physica E. 2. 734 (1998)
[Publications] S.Nomura: "Enhancement of photoluminescence near Fermi level in bias voltage controlled quantum dot array" Solid-State Communications. 106. 815 (1998)

1998 Fiscal Year Annual Research Report

単電子デバイスとその高密度集積化

Principal Investigator

長谷川 英機 北海道大学, 工学研究科, 教授 (60001781)

Research Products

[Publications] H.Hasegawa: "Electrochemical formation and characterization of Schottky in-plane and wrap gate structure for realization of GaAs- and InP-based quantum wires and dots" Applied Surface Science. 123/124. 335 (1998)

[Publications] T.Hashizume: "Surface passivation of GaAs with ultrathin Si_3Ni_4/Si interface control layer formed by MBE and in situ ECR plasma nitridation" Applied Surface Science. 123/124. 599 (1998)

[Publications] H.Takahashi: "Novel InP metal-insulator-semiconductor structure having an ultrathin silicon interface control layer"" Applied Surface Science. 123/124. 615 (1998)

[Publications] B.Adamowicz: "Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer" Physica E. 2. 261 (1998)

[Publications] N.Tsurumi: "In-Situ Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs(001)-(2x4) Surface" Japanese Journal of Applied Physics. 37. 1501 (1998)

[Publications] Y.Satoh: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. 37. 1584 (1998)

[Publications] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based In_<0.53>Ga_<0.47>As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 37. 1532 (1998)

[Publications] T.Hashizume: "In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2x4) GaAs Surfaces" Japanese Journal of Applied Physics. 37. 1626 (1998)

[Publications] B.Adamowicz: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surface and Behavior of Surface Recombination Velocity" Japanese Journal of Applied Physics. 37. 1631 (1998)

[Publications] Y.Hanada: "Direct Formation of InGaAs Coupled Quantum Wire-Dot Structures by Selective Molecular Beam Expitaxy on InP Patterned Substrates" Solid Staate Electronics. 42. 1413 (1998)

[Publications] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Redge Quantum Wire Grown by Selective MBE" Solid State Electronics. 42. 1419 (1998)

[Publications] S.Chakraborty: "Formation of ultrathin oxynitride layers on Si (100) by low-temperature electron cyclotron resonance N_2O plasma oxynitridation process" Journal of Vacuum Science and Technology. B16. 2159 (1998)

[Publications] Y.Ishikawa: "Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic structure and Fermi level pinning on GaAs (110) surfaces grown by molecular beam epitaxy" Journal of Vacuum Science and Technology. B16. 2387 (1998)

[Publications] Y.Sato: "Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Three Schottky Wrap Gates" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] H.Fujikura: "Control of Dot Size and Tunneling Barrier Profile in In_<0.53>Ga_<0.47>As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] T.Muranaka: "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] H.Fujikura: "Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] M.B.Takeyama: "Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] T.Sato: "Strong Correlation Between Interface Microstructure and Barrier Height in n-InP Schottky Contacts Formed by In Situ Electrochemical Process" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] C.Kaneshiro: "Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] H.Takahashi: "XPS and Contactless C-V Characterization of Novel Oxide-Free InP Passivation Process Using Silicon Surface Quantum Well" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] H.Fujikura: "Formation of Highly Uniform InGaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy on Novel InP Patterned Substrates" Thin Solid Film. (in press). (1999)

[Publications] H.Fujikura: "Selective MBE Growth Quantum Wire-Dot Coupled Structures with Novel High Index Facets for InGaAs Single Electron Transistor Arrays" Microelectronics. (in press). (1999)

[Publications] J.Nakamura: "Transport Properties of Schottky In-Plane-Gate GaAs Single and Coupled Quantum Wire Transistors" IOP conference series. (in press). (1999)

[Publications] N.Ono: "N.Ono. H.Fujikura and H.Hasegawa : “Study of Selective MBE Growth on Patterned (001) InP Substrates Toward Realization of <100>-Oriented InGaAs Ridge Quantum Wires" IOP conference seriesc. (in press). (1999)

[Publications] C.Kaneshiro: "Realization of Strongly Metal-Deppendent Schottky Barrier Heights on n-GaAs by In Situ Electrochemical Process" IOP conference series. (in press). (1999)

[Publications] T.Muranaka: "Realization of InP-Based InGaAs Single Electron Transistors on Wires and Dots by Selective MBE" Microelectronic Engineering. (in press). (1999)

[Publications] H.Okada: "GaAs-Based Single Electron Logic and Memory Devices Using Electro-Deposited Nanometer Schottky Gates" Microelectronic Engineering. (in press). (1999)

[Publications] H.Sai: "Growth of Device Quality InGaAs/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy using Tertiarybutylphosphine" Solid State Electronics. (in press). (1999)

[Publications] H.Sai: "Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of Tertiaryphosphine-Based Molecular Beam Epitaxial Growth of In_<0.48>Ga_<0.52>P on GaAs" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] H.Sai: "H.Sai. H.Fujikura and H.Hasegawa : “Gas Source Molecular Beam Epitaxial Growth of In_<1-x>Ga_xP on GaAs Using Tertiarybutylphosphine" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] H.Hasegawa: "Properties of Metal-Semiconductor Interfaces Formed on n-type GaN" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] T.Sato: "Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Depositionc" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] T.Yoshida: "A Novel Non-Destructive Characterization Method of Electronic Properies of Pre- and Post-Processing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] M.Mutoh: "Effects of Surface Reconstruction on Silicon Interface Control Layer Based Passivation of (001) GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System" Japanese Journal of Applied Physics. 38(in press). (1999)

[Publications] H.Takahashi,: "In-situ Characterization Technique of Compound Semiconductor Hetrostructure Growth and Device Processing Steps Based on UHV Contactless Capacitance-Voltage Measurement" Solid-State Electron.(in press). (1999)

[Publications] Y.Koyama: "Formation Processes and Properties of Schottky and Ohmic Contacts on n-type GaN form Field Effect Transistor Applications" Solid-State Electron.(in press). (1999)

[Publications] A.Hamamatsu: "A.Hamamatsu, C.Kaneshiro, H.Fujikura and H.Hasegawa,“Formation of <001>-Aligned Nano-Scale Pores on (001) n-InP Surfaces by Photoelectrochemical Anodization in HCl"" Journal of Electroanalytical Chemistry. (in press). (1999)

[Publications] K.Kawamura: "Theory of artificial atoms and molecules usining semiconductor quantum dots" Japanese Journal of Applied Physics. 38. 366 (1999)

[Publications] M.Kawabe: "Self-organization of high-density III-V quantum dots on high-index substrates" Japanese Journal of Applied Physics. 38. 491 (1999)

[Publications] G.Yusa: "Trapping of a single photogenerated hole by an InAs quantum dot in GaAs/n-AlGaAs quantum trap FET and its spectral response in the near infrared regime" Physica E. 2. 734 (1998)

[Publications] S.Nomura: "Enhancement of photoluminescence near Fermi level in bias voltage controlled quantum dot array" Solid-State Communications. 106. 815 (1998)

長谷川英機北海道大学, 工学研究科, 教授 (60001781)