2000 Fiscal Year Annual Research Report

単電子デバイスとその高密度集積化

Research Project

Project/Area Number	08247102
Research Institution	Hokkaido University
Principal Investigator	長谷川英機北海道大学, 大学院・工学研究科, 教授 (60001781)
Co-Investigator(Kenkyū-buntansha)	川辺光央筑波大学, 物理工学系, 教授 (80029446) 榊裕之東京大学, 生産技術研究所, 教授 (90013226) 川村清慶應義塾大学, 理工学部, 教授 (00011619) 難波進長崎総合科学大学, 工学部, 教授 (70029370) 菅野卓雄東洋大学, 教授 (50010707)
Keywords	単電子デバイス / ナノ構造 / 表面・界面 / トンネル障壁 / 量子ドット / 量子デバイス / 量子コンピューティング / 高密度集積化
Research Abstract	本研究は平成8-11年度にわたって設定された特定領域研究「単電子デバイスとその高密度集積化」に関して、総括班を構成し、本特定領域研究の成果のとりまとめを行うことを目的とした。本特定領域研究は、A01)単電子輸送と単電子ナノ構造形成の物性論的基礎、A02)ナノ構造の表面・界面の制御と単電子トンネル障壁の最適化、A03)単電子デバイスの創出とその回路・アーキテクチュアの検討、A04)単電子デバイスの高密度集積化のための新技術の開拓次、の4つの主要研究項目を設定し、厳選された計画研究班と特色ある公募研究者によって研究を推進してきた。平成12年度は、これらの主要研究項目を中心に、本特定領域研究を総括し、その成果の取りまとめを行った。 (1)本特定領域研究で得られた研究成果を、広く国内外にアピールするために、研究成果発表会を、国際シンポジウム"2000 International Symposium on Formation,Physics and Device Application of Quantum Dot Structures(QDS2000)"(量子ドット構造の形成、物理とデバイス応用に関する国際シンポジウム)として、平成12年9月10日-14日に札幌市(北海道大学学術交流会館)にて開催した。外国人研究者26人を含め146人が参加し、発表論文総数は108編であった。また、会議のプロシーディングスをJapanese Journal of Applied Physics誌の特集号(平成13年3月号)として出版した。 (2)各班の研究代表者が中心となって、A01〜A04の主要研究項目ごとに研究成果・研究業績等の取りまとめを行った。 (3)(2)の結果に基づいて、本特定領域研究に参加した班員全員の研究成果を取りまとめ、本特定領域研究の総括を含めた「研究成果報告書」を作成した。

Research Products

(21 results)

All Other

All Publications (21 results)

[Publications] H.Hasegawa: "Unpinning of Fermi levcl in nanometer-sized Schottky contacts on GaAs and InP"Applied Surface Science. 166. 92-96 (2000)
[Publications] H.Takahashi: "In situ UHV contactless C-V and XPS characterization of surface passivation process for InP using a partially nitrided Si interface control layer"Applied Surface Science. 166. 526-531 (2000)
[Publications] H.Fujikura: "Formation of device-oriented InGaAs coupled quantum structures by selective MBE growth on patterned InP substrates"Physica E. 7. 864-869 (2000)
[Publications] C.Jiang: "Vertical barrier layer formation during selective MBE growth of InGaAs ridge quantum wires on InP patterned substates"Physica E. 7. 902-906 (2000)
[Publications] H.Hasegawa: "Prospects and Key Issues for Compound Semiconductor Quantum Devices"Tehcnical Report of IEICE. 51. 43-48 (2000)
[Publications] H.Hasegawa: "Advanced mesoscopic device concepts and technology"Microelectronic Engineering. 53. 29-36 (2000)
[Publications] N.Negoro: "Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001)GaAs for surface passivation"Applied Surface Science. 159/160. 292-300 (2000)
[Publications] S.Anantathanasarn: "Surface passivation of GaAs by ultra-thin cubic GaN layer"Applied Surface Science. 159/160. 456-461 (2000)
[Publications] T.Shiozawa: "Correlation between interface state properties and electron transport at ultrathin insulator/Si interfaces"Applied Surface Science. 159/160. 98-103 (2000)
[Publications] H.Hasegawa: "MBE growth and applications of silicon interface control layers"Thin Solid Films. 367. 58-67 (2000)
[Publications] H.Hasegawa: "Effects of gap states on scanning tunneling spectra observed on (110)-and (001)-oriented clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared by molecular beam epitaxy"Journal of Vacuum Science & Technology B. 18. 2100-2108 (2000)
[Publications] M.Iwaya: "Chemical and Electrochemical Nanofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors"Japanese Journal of Applied Physics. 39. 4651-4652 (2000)
[Publications] H.Fujikura: "Electrochemical Formation of Uniform and Straight Nano-Pore Arrays on (001) InP Surfaces and Their Photoluminescence Characterizations"Japanese Journal of Applied Physics. 39. 4616-4620 (2000)
[Publications] T.Yoshida: "Ultrahigh-Vacuum Contactless Capacitance-Voltage Characterization of Hydrogen-Terminated-Free Silicon Surfaces"Japanese Journal of Applied Physics. 39. 4504-4508 (2000)
[Publications] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process"Japanese Joumal of Applied Physics. 39. 4609-4615 (2000)
[Publications] M.Yamada: "Fabrication and Characterization of Novel Oxide-Free InP Metal-Insulator-Semiconductor FETs Having an Ultra Narrow Si Surface Quantum Well"Japanese Journal of Applied Physics. 39. 2439-2443 (2000)
[Publications] S.Ootomo: "Nitridation of GaP (100) Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance Nitrogen Plasma"Japanese Journal of Applied Physics. 39. 2407-2413 (2000)
[Publications] T.Muranaka: "Selective MBE Growth of InGaAs Quantum Wire-Dot Coupled Structures with Controlled Double-Barrier Potential Profiles"IOP conference seriess. 166. 187-190 (2000)
[Publications] S.Kasai: "GaAs Quantum Wire Transistors and Single Electron Transistors using Schottky Wrap Gates for Quantum Integrated Circuits"IOP conference series. 166. 219-222 (2000)
[Publications] T.Muranaka: "Origing of Non-Uniformity in MBE Grown Nanometer-Sized InGaAs Ridge Quantum Wires and Its Removal by Atomic Hydrogen-Assisted Cleaning"Thin Solid Films. 380. 189-191 (2000)
[Publications] R.Nakasaki: "Insulator-GaN interface structures formed by plasma-assisted chemical vapor deposition"Physica E. 7. 953-957 (2000)

2000 Fiscal Year Annual Research Report

単電子デバイスとその高密度集積化

Principal Investigator

長谷川 英機 北海道大学, 大学院・工学研究科, 教授 (60001781)

Research Products

[Publications] H.Hasegawa: "Unpinning of Fermi levcl in nanometer-sized Schottky contacts on GaAs and InP"Applied Surface Science. 166. 92-96 (2000)

[Publications] H.Takahashi: "In situ UHV contactless C-V and XPS characterization of surface passivation process for InP using a partially nitrided Si interface control layer"Applied Surface Science. 166. 526-531 (2000)

[Publications] H.Fujikura: "Formation of device-oriented InGaAs coupled quantum structures by selective MBE growth on patterned InP substrates"Physica E. 7. 864-869 (2000)

[Publications] C.Jiang: "Vertical barrier layer formation during selective MBE growth of InGaAs ridge quantum wires on InP patterned substates"Physica E. 7. 902-906 (2000)

[Publications] H.Hasegawa: "Prospects and Key Issues for Compound Semiconductor Quantum Devices"Tehcnical Report of IEICE. 51. 43-48 (2000)

[Publications] H.Hasegawa: "Advanced mesoscopic device concepts and technology"Microelectronic Engineering. 53. 29-36 (2000)

[Publications] N.Negoro: "Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001)GaAs for surface passivation"Applied Surface Science. 159/160. 292-300 (2000)

[Publications] S.Anantathanasarn: "Surface passivation of GaAs by ultra-thin cubic GaN layer"Applied Surface Science. 159/160. 456-461 (2000)

[Publications] T.Shiozawa: "Correlation between interface state properties and electron transport at ultrathin insulator/Si interfaces"Applied Surface Science. 159/160. 98-103 (2000)

[Publications] H.Hasegawa: "MBE growth and applications of silicon interface control layers"Thin Solid Films. 367. 58-67 (2000)

[Publications] H.Hasegawa: "Effects of gap states on scanning tunneling spectra observed on (110)-and (001)-oriented clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared by molecular beam epitaxy"Journal of Vacuum Science & Technology B. 18. 2100-2108 (2000)

[Publications] M.Iwaya: "Chemical and Electrochemical Nanofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors"Japanese Journal of Applied Physics. 39. 4651-4652 (2000)

[Publications] H.Fujikura: "Electrochemical Formation of Uniform and Straight Nano-Pore Arrays on (001) InP Surfaces and Their Photoluminescence Characterizations"Japanese Journal of Applied Physics. 39. 4616-4620 (2000)

[Publications] T.Yoshida: "Ultrahigh-Vacuum Contactless Capacitance-Voltage Characterization of Hydrogen-Terminated-Free Silicon Surfaces"Japanese Journal of Applied Physics. 39. 4504-4508 (2000)

[Publications] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process"Japanese Joumal of Applied Physics. 39. 4609-4615 (2000)

[Publications] M.Yamada: "Fabrication and Characterization of Novel Oxide-Free InP Metal-Insulator-Semiconductor FETs Having an Ultra Narrow Si Surface Quantum Well"Japanese Journal of Applied Physics. 39. 2439-2443 (2000)

[Publications] S.Ootomo: "Nitridation of GaP (100) Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance Nitrogen Plasma"Japanese Journal of Applied Physics. 39. 2407-2413 (2000)

[Publications] T.Muranaka: "Selective MBE Growth of InGaAs Quantum Wire-Dot Coupled Structures with Controlled Double-Barrier Potential Profiles"IOP conference seriess. 166. 187-190 (2000)

[Publications] S.Kasai: "GaAs Quantum Wire Transistors and Single Electron Transistors using Schottky Wrap Gates for Quantum Integrated Circuits"IOP conference series. 166. 219-222 (2000)

[Publications] T.Muranaka: "Origing of Non-Uniformity in MBE Grown Nanometer-Sized InGaAs Ridge Quantum Wires and Its Removal by Atomic Hydrogen-Assisted Cleaning"Thin Solid Films. 380. 189-191 (2000)

[Publications] R.Nakasaki: "Insulator-GaN interface structures formed by plasma-assisted chemical vapor deposition"Physica E. 7. 953-957 (2000)

長谷川英機北海道大学, 大学院・工学研究科, 教授 (60001781)