1996 Fiscal Year Annual Research Report

単電子デバイスの創出とその回路・アーキテクチャの検討

Research Project

Project/Area Number	08247104
Research Category	Grant-in-Aid for Scientific Research on Priority Areas
Research Institution	The University of Tokyo
Principal Investigator	榊裕之東京大学, 先端科学技術研究センター, 教授 (90013226)
Co-Investigator(Kenkyū-buntansha)	雨宮好二北海道大学, 工学部, 教授 (80250489) 鳳紘一郎東京大学, 大学院・工学系研究科, 助教授 (60211538) 谷口研二大阪大学, 工学部, 助教授 (20192180) 井上正崇大阪工業大学, 電気工学科, 教授 (20029325) 坪内和夫東北大学, 電気通信研究所, 教授 (30006283)
Keywords	単電子素子 / 量子箱 / 帯電効果 / テラヘルツ光 / 分割ゲート構造 / 単電子トランジスタ(SET) / インジウム砒素(InAs) / トンネル現象
Research Abstract	新構造の単電子素子の考案と試作、従来形の単電子素子の課題の解明と対応の指示、単電子素子に適したシステムの研究を進め次の成果を得た。まず、GaAs基板上にInAsを堆積して自然に形成される10nm級の量子箱を活用した単電子素子の可能性を探索した。例えば、逆HEMT構造のチャネルの近傍に量子箱層を設けた素子では、ゲート電圧の作用で各々の量子箱に電子や正孔が一個ずつトラップされるためメモリー機能の得られることを示した(榊)。InAs量子箱をチャネルの中央部に置き、その幅を分割ゲートで細めた素子では、帯電効果を反映する伝導特性を見出した(陽)。さらにテラヘルツ光で量子箱を介した伝導を変調して検出するために、分割ゲートを持つGaAs/AlGaAs構造の遠赤外領域での応答を調べ、細線の量子状態を反映した共鳴的応答の生じることを示した(平川)。InAs系の単電子素子の作製技術として、GaSb障壁層をAFM探針で極微領域のみ選択酸化する技術を開発するとともに(井上)、結晶の面方位や事前加工により量子箱の形状や位置の制御性を示した(陽)。他方、従来形の単電子トランジスタ(SET)の動作について様々な検討を加え、その問題点の解決策を探った。例えば、トンネル現象が確率過程であることに伴うビット誤り率を評価し、10個以上の多数の電子を用いた回路とするか、電流モード切り替え形の電流ミラー回路とすることの有効性を示した(坪内)。また、SETを活用したニューロ回路やWinner-tale-all形回路を用いたシステムは個々の素子に誤動作があっても、システムとして安定な動作を示すことを見出した(谷口)。さらに、2個の壁を同時にトンネルする過程を取り入れた回路シミュレータを作り、容量結合形トンネル接合列の解析を行い、問題点の一部が解決することを示した(鳳)。また、SETを2分決定グラフ形の回路で各種の論理システムの構築できることを示した(雨宮)。

Research Products

(42 results)

All Other

All Publications (42 results)

[Publications] T.Saitoh,H.Takeuchi S.Koda and K.Yoh: "Optical Characterization of InAs Quantum Dot Fabricated by Molecular Beam Epitaxy" Jpn.J.Appl.Phys.35. 1217-1220 (1996)
[Publications] T:Soith,A.Tanimura and K.Yoh: "Regular Array Formation of InAs Quintum Dots Grown on Patterned(III)B GaAs Substrate by MBE" Jpn.J.Appl.Phys.35. 1370-1374 (1996)
[Publications] 谷村新,斉藤俊也、陽完治: "GaAs加工基板を用いた自然形成InAsドットの作製とそのデバイス応用" 電子情報通信学会、信学技報. ED96・117. 39-46 (1996)
[Publications] M.Akazawa,Y.Amemiya: "Directional Single-Electron-Tunneling Junction" Jpn.J.Appl.Phys.35. 3569-3575 (1996)
[Publications] Y.Anemiya: "Analog Computation Using Quantum Strutures-A Pronising Computation Architecture for Quantum Prccestic" IEICE Thans.Electronics. E-79C. 1481-1486 (1996)
[Publications] M.Akazawa,Y.Amemiya: "Bcltzmunn Machine Neuron Clrcuit Using Single-Electron Tunneling" Appl.Phys.Lett.70・5. 670-672 (1997)
[Publications] H.Matsuhashi: "Self-Aligned Barrier Layer Formation for Fielly Selt-Aligned Metalization MOSFET" Abst.Advanced Metslization and Interconnect systems for ULST Applications,Boston. (1996)
[Publications] J.H Chung: "Flaorine Termination Effect on Al-CVD" Abst.Aduanced Metalization and Interconnect Systems for ULSI Applications,Boston. (1996)
[Publications] K.Tsubouchi: "Al-CVD Technology for Multilevel Metallization" Abst・Advanced Metalization and Interconnect Syttemi for ULSI Applications,Boston. (1996)
[Publications] 鷺谷剛: "Eb/No-BER特性によるLSI動作評価" 電子情報通信学会技術研究報告(集積回路研究会). ICD96-132. 85-92 (1996)
[Publications] 後藤晶夫: "選択Al CVD技術を用いた完全自己整合メラライゼーションMOSFET" 電子情報通信学会技術研究報告(シリコン材料-デバイス研究会). SDM96-135. 25-30 (1996)
[Publications] S.Sasa: "High Field Transport Properties of InAs/AlGaSb Quantun wires" Physica B. 227. 363-366 (1996)
[Publications] M.Inoue: "Low-dimensional electron transport properties in InAs/AlGaSb mesoscopic structures" Superlattices and Microstructures. 21・1. 1-8 (1996)
[Publications] S.Sasa: "Increased electron concentration in InAs/AlGaSb heterostructures using a siplanar dcped ultrathin InAs quantum well" Extended Abstract of Int.Cont.on SSPM96. 550-552 (1996)
[Publications] J.Kono: "Terahertz Photoresponse of Quantum Wires in Magnetic Fields" Procs.of ICPS96,Superlattices and Microstructures. 20. 383-387 (1996)
[Publications] M.Inoue: "Quasi-One-Dimensional Transport and Hot Electron Effects in InAs Mesoscopic Structures" Hot Carriers in Semiconductors. 251-254 (1996)
[Publications] S.Osako: "Quantum unti-dot arrays and quantum wire transistors fabricated on InAs/Al_<0.5>Gs_<0.5>sb heterostructuers" Semicond.Scie & Techrology. 11. 571-575 (1996)
[Publications] K.Taniguchi: "Future Prospects of Single-Electron-Tunneling(SET)Based Digital Circuits." FED Jourrnal,Supplment2. 7. (1997)
[Publications] S.Amakawa,H.Fukui,M.Fujishima and K.Hoh: "Estimation of Cotunneling in Single-Electron Logic and Its Sappresion" Jupanese Journal of Applied Physics. 35・2B. 1146-1150 (1996)
[Publications] K.Hirakawa: "Coherent submillimeter-waveemission from non-equilibrium two-dimersionalfree earrier plasmei in AlGaAs/GsAs hetero junctions" Surface Science. 361/362. 368-371 (1996)
[Publications] M.Uosseburser: "Radiative decay of optically excited Colerent Plasmonsina two-dimensional electron gas" Journal of the Optical Society of AmercaB. 13・5. 1045-1053 (1996)
[Publications] K.Hirakawa: "Supply-function dependent sequential resonant tunneling in semicouductor multiple quantum well diodes" Physica B. 227. 202-205 (1996)
[Publications] Y.Shimada: "Candition for the high-field domain formation in semiconductor multiple quantum well sequential rescnant turrelingstructure" Japanese Journal of Applied Physics. (1996)
[Publications] 平川一彦: "半導体ナノ構造中のホットな低次元電子系からの遠赤外放射" 固体物理. 31・4. 277-286 (1996)
[Publications] N.Sekine: "Ultrashort lifetime phorocarriers InGe thin films" Applied Physics letters. 68・24. 3419-3421 (1996)
[Publications] S.N.Wang: "Direct determination of hare confinement potentials in AlGsAs/GsAs split-gate single quantum wires by far in frured spectroscopy" Japanese Jeurral of Applied Physics (part 2). 35・10A. L1249-L1252 (1996)
[Publications] 関根徳彦: "集積化光伝導ダイポールアンテナによるテラヘルツ光の発生と検出" 電子情報通信学会論文誌C-1. J79-C-I. 446-447 (1996)
[Publications] K.Hirakawa: "Giant regative far-in fvared response of the diagonal mashetoresistance dae to edge channel transport in the guantired Hall regime" Proceedings of the 23rd Inrternational Cenfarence on the Physics of Semiconductors. 3. 2543-2546 (1996)
[Publications] K.Masu: "SET Current Mirror Circuit" Proc.of 1996 Int.Symp-on Formation,Physics and Divice Application of Quantum Dot Structures,Sapporo. We3-9 (1996)
[Publications] K.Masu: "Multilevel Metullization Based on AlCVD" Digest of Technical Papers 1996 Symp.on VLSI Technolosy,Honolulu. 44-45 (1996)
[Publications] R.Yoshimura: "Performance of Novel Side Gate FETs" Topical Workshop on Heterostructure Microelectronics(TWHM'96)Final Program and Abstracts. 42-42 (1996)
[Publications] M.Kirihara: "Single electron neuron circuit" Final Programs & Collected Abstrasts of 1996 Int.Symp-on Formation,Physics and Device Application of Quntum Dot Stuructures. 158 (1996)
[Publications] M.Kirihara: "Monte Carlo simulation for single electron circuits" Proc.of Asiu and Scuth Pacific Design Autamatic Conference,Chiba. 333 (1997)
[Publications] T.Nakano: "A Novel Bistable Double-Batrier Resonant Tunnel Diode by Charging Effect of InAs Dots" Ext-Abst.of the 1996 Int. Cont.on Solid State Devices and Materials,Yokohama. 752-754 (1996)
[Publications] G.Yusa: "Trapping of photo generated carriers by InAs quantum dots and persisitent photoconductivity in novel GaAs1n-AlGaAs field effect thanasistors tructues" Applied Physics Letters.
[Publications] G.Yusa: "MBE growth of novel GaAs/n^-AlGaAs field-effect transistor structures with embedded InAs quantum traps and their transport characteristics" J.Cryst.Growth.
[Publications] C.Metzner: "Modelling of inter-dot Coulomp interactisn effects in field-effect transistors with embedded quantum dot layer" Proc.of 9th Int.Cont.on Superlattices,Microstcustures and Microdevices. (1996)
[Publications] M.Narihiro: "Resonant tunneling of electrons via 20nm-sale InAs quantum dot and Magneto tunneling spectroscopy of its electronic states" Appl.Phys.Lett.70・1. 105-107 (1997)
[Publications] M.Narihiro: "Magneto-tunneling study of zero-dimensional electronic states in self-organized InAs quantum dot" Proc.of 12th Int.Conf.of the Application of High Magnetic Fields in Semiconductos Physics. (1996)
[Publications] M.Narihiro: "Selection mechanisms in the resonant tunneling transport of electrons Via Self-organized InAs guantum dots" 1996Int.Symp on Formation,Physics and Device Application of Quantum Dot Structures,Sapporo. (1996)
[Publications] Kanji.Yoh(分担): "Hot Carriers in semiconductors" Prenum Press,New York, (1996)
[Publications] 平川一彦(分担): "メゾスコピック系の物理" 丸善, (1996)

1996 Fiscal Year Annual Research Report

単電子デバイスの創出とその回路・アーキテクチャの検討

Principal Investigator

榊 裕之 東京大学, 先端科学技術研究センター, 教授 (90013226)

Research Products

[Publications] T.Saitoh,H.Takeuchi S.Koda and K.Yoh: "Optical Characterization of InAs Quantum Dot Fabricated by Molecular Beam Epitaxy" Jpn.J.Appl.Phys.35. 1217-1220 (1996)

[Publications] T:Soith,A.Tanimura and K.Yoh: "Regular Array Formation of InAs Quintum Dots Grown on Patterned(III)B GaAs Substrate by MBE" Jpn.J.Appl.Phys.35. 1370-1374 (1996)

[Publications] 谷村新,斉藤俊也、陽完治: "GaAs加工基板を用いた自然形成InAsドットの作製とそのデバイス応用" 電子情報通信学会、信学技報. ED96・117. 39-46 (1996)

[Publications] M.Akazawa,Y.Amemiya: "Directional Single-Electron-Tunneling Junction" Jpn.J.Appl.Phys.35. 3569-3575 (1996)

[Publications] Y.Anemiya: "Analog Computation Using Quantum Strutures-A Pronising Computation Architecture for Quantum Prccestic" IEICE Thans.Electronics. E-79C. 1481-1486 (1996)

[Publications] M.Akazawa,Y.Amemiya: "Bcltzmunn Machine Neuron Clrcuit Using Single-Electron Tunneling" Appl.Phys.Lett.70・5. 670-672 (1997)

[Publications] H.Matsuhashi: "Self-Aligned Barrier Layer Formation for Fielly Selt-Aligned Metalization MOSFET" Abst.Advanced Metslization and Interconnect systems for ULST Applications,Boston. (1996)

[Publications] J.H Chung: "Flaorine Termination Effect on Al-CVD" Abst.Aduanced Metalization and Interconnect Systems for ULSI Applications,Boston. (1996)

[Publications] K.Tsubouchi: "Al-CVD Technology for Multilevel Metallization" Abst・Advanced Metalization and Interconnect Syttemi for ULSI Applications,Boston. (1996)

[Publications] 鷺谷剛: "Eb/No-BER特性によるLSI動作評価" 電子情報通信学会技術研究報告(集積回路研究会). ICD96-132. 85-92 (1996)

[Publications] 後藤晶夫: "選択Al CVD技術を用いた完全自己整合メラライゼーションMOSFET" 電子情報通信学会技術研究報告(シリコン材料-デバイス研究会). SDM96-135. 25-30 (1996)

[Publications] S.Sasa: "High Field Transport Properties of InAs/AlGaSb Quantun wires" Physica B. 227. 363-366 (1996)

[Publications] M.Inoue: "Low-dimensional electron transport properties in InAs/AlGaSb mesoscopic structures" Superlattices and Microstructures. 21・1. 1-8 (1996)

[Publications] S.Sasa: "Increased electron concentration in InAs/AlGaSb heterostructures using a siplanar dcped ultrathin InAs quantum well" Extended Abstract of Int.Cont.on SSPM96. 550-552 (1996)

[Publications] J.Kono: "Terahertz Photoresponse of Quantum Wires in Magnetic Fields" Procs.of ICPS96,Superlattices and Microstructures. 20. 383-387 (1996)

[Publications] M.Inoue: "Quasi-One-Dimensional Transport and Hot Electron Effects in InAs Mesoscopic Structures" Hot Carriers in Semiconductors. 251-254 (1996)

[Publications] S.Osako: "Quantum unti-dot arrays and quantum wire transistors fabricated on InAs/Al_<0.5>Gs_<0.5>sb heterostructuers" Semicond.Scie & Techrology. 11. 571-575 (1996)

[Publications] K.Taniguchi: "Future Prospects of Single-Electron-Tunneling(SET)Based Digital Circuits." FED Jourrnal,Supplment2. 7. (1997)

[Publications] S.Amakawa,H.Fukui,M.Fujishima and K.Hoh: "Estimation of Cotunneling in Single-Electron Logic and Its Sappresion" Jupanese Journal of Applied Physics. 35・2B. 1146-1150 (1996)

[Publications] K.Hirakawa: "Coherent submillimeter-waveemission from non-equilibrium two-dimersionalfree earrier plasmei in AlGaAs/GsAs hetero junctions" Surface Science. 361/362. 368-371 (1996)

[Publications] M.Uosseburser: "Radiative decay of optically excited Colerent Plasmonsina two-dimensional electron gas" Journal of the Optical Society of AmercaB. 13・5. 1045-1053 (1996)

[Publications] K.Hirakawa: "Supply-function dependent sequential resonant tunneling in semicouductor multiple quantum well diodes" Physica B. 227. 202-205 (1996)

[Publications] Y.Shimada: "Candition for the high-field domain formation in semiconductor multiple quantum well sequential rescnant turrelingstructure" Japanese Journal of Applied Physics. (1996)

[Publications] 平川一彦: "半導体ナノ構造中のホットな低次元電子系からの遠赤外放射" 固体物理. 31・4. 277-286 (1996)

[Publications] N.Sekine: "Ultrashort lifetime phorocarriers InGe thin films" Applied Physics letters. 68・24. 3419-3421 (1996)

[Publications] S.N.Wang: "Direct determination of hare confinement potentials in AlGsAs/GsAs split-gate single quantum wires by far in frured spectroscopy" Japanese Jeurral of Applied Physics (part 2). 35・10A. L1249-L1252 (1996)

[Publications] 関根徳彦: "集積化光伝導ダイポールアンテナによるテラヘルツ光の発生と検出" 電子情報通信学会論文誌C-1. J79-C-I. 446-447 (1996)

[Publications] K.Hirakawa: "Giant regative far-in fvared response of the diagonal mashetoresistance dae to edge channel transport in the guantired Hall regime" Proceedings of the 23rd Inrternational Cenfarence on the Physics of Semiconductors. 3. 2543-2546 (1996)

[Publications] K.Masu: "SET Current Mirror Circuit" Proc.of 1996 Int.Symp-on Formation,Physics and Divice Application of Quantum Dot Structures,Sapporo. We3-9 (1996)

[Publications] K.Masu: "Multilevel Metullization Based on AlCVD" Digest of Technical Papers 1996 Symp.on VLSI Technolosy,Honolulu. 44-45 (1996)

[Publications] R.Yoshimura: "Performance of Novel Side Gate FETs" Topical Workshop on Heterostructure Microelectronics(TWHM'96)Final Program and Abstracts. 42-42 (1996)

[Publications] M.Kirihara: "Single electron neuron circuit" Final Programs & Collected Abstrasts of 1996 Int.Symp-on Formation,Physics and Device Application of Quntum Dot Stuructures. 158 (1996)

[Publications] M.Kirihara: "Monte Carlo simulation for single electron circuits" Proc.of Asiu and Scuth Pacific Design Autamatic Conference,Chiba. 333 (1997)

[Publications] T.Nakano: "A Novel Bistable Double-Batrier Resonant Tunnel Diode by Charging Effect of InAs Dots" Ext-Abst.of the 1996 Int. Cont.on Solid State Devices and Materials,Yokohama. 752-754 (1996)

[Publications] G.Yusa: "Trapping of photo generated carriers by InAs quantum dots and persisitent photoconductivity in novel GaAs1n-AlGaAs field effect thanasistors tructues" Applied Physics Letters.

[Publications] G.Yusa: "MBE growth of novel GaAs/n^-AlGaAs field-effect transistor structures with embedded InAs quantum traps and their transport characteristics" J.Cryst.Growth.

[Publications] C.Metzner: "Modelling of inter-dot Coulomp interactisn effects in field-effect transistors with embedded quantum dot layer" Proc.of 9th Int.Cont.on Superlattices,Microstcustures and Microdevices. (1996)

[Publications] M.Narihiro: "Resonant tunneling of electrons via 20nm-sale InAs quantum dot and Magneto tunneling spectroscopy of its electronic states" Appl.Phys.Lett.70・1. 105-107 (1997)

[Publications] M.Narihiro: "Magneto-tunneling study of zero-dimensional electronic states in self-organized InAs quantum dot" Proc.of 12th Int.Conf.of the Application of High Magnetic Fields in Semiconductos Physics. (1996)

[Publications] M.Narihiro: "Selection mechanisms in the resonant tunneling transport of electrons Via Self-organized InAs guantum dots" 1996Int.Symp on Formation,Physics and Device Application of Quantum Dot Structures,Sapporo. (1996)

[Publications] Kanji.Yoh(分担): "Hot Carriers in semiconductors" Prenum Press,New York, (1996)

[Publications] 平川一彦(分担): "メゾスコピック系の物理" 丸善, (1996)

榊裕之東京大学, 先端科学技術研究センター, 教授 (90013226)