1997 Fiscal Year Annual Research Report

単電子デバイスの創出とその回路・アーキテクチャの検討

Research Project

Project/Area Number	08247104
Research Institution	The University of Tokyo
Principal Investigator	榊裕之東京大学, 生産技術研究所, 教授 (90013226)
Co-Investigator(Kenkyū-buntansha)	雨宮好二北海道大学, 工学部, 教授 (80250489) 鳳紘一郎東京大学, 大規模集積システム設計教育研究センター, 教授 (60211538) 谷口研二大阪大学, 工学部, 教授 (20192180) 井上正崇大阪工業大学, 電気工学科, 教授 (20029325) 坪内和夫東北大学, 電気通信研究所, 教授 (30006283)
Keywords	単電子FETメモリー / SET寸法スケーリング / InAs系 / 非対照ターンスケール / 単電子回路シミュレータ / シングルエレクトロン多数決論理システム / サブバンド間遷移 / InAs量子ドット
Research Abstract	・InAs量子箱に単一の電子や正孔を捕縛するヘテロFET型メモリー素子の動作機構に検討を加えた。特に、量子箱の準位が成長条件やAlGaAsマトリックスのAl組成に如何に依存するかを調べ、捕縛過程の制御可能性を調べた。また、集束イオンビームによるインプレーンゲートを用いた単電子素子を開発した。(榊) ・SET回路の金属配線間浮遊容量を最小トンネル接合容量の1-3倍に抑制すべきであるという指針を示し、実際にCSETインバータ回路レイアウトを構成し、その動作をMonte Calroシミュレーションにより確認した。SET回路においてλでトンネル接合平面寸法をスケーリングする際、配線間距離をλ-1/2乗でスケーリングすべき事を示した。(坪内) ・AFM酸化により、周期的に変調された二次元電子を形成し、ワイス振動より確認した。単電子トランジスタに適用できるサイドゲート形三端子デバイスの作製に成功した。多彩な量子効果を利用するため、タイプII共鳴トンネルダイオードを作製し、高いピーク・バレー電流比を得た。(井上) ・(1)一方向に電荷転送が可能な非対照型ターンスタイルを提案し、それを応用した多数決論理回路とニューロン素子を提案した。(2)単電子メモリにおける電荷保持特性と温度、キャパシタ容量との関係を明らかにした。・単電子回路シミュレータとして、モンテカルロ法とマスター方程式を組み合わせ高速かつ高精度に回路の定常状態を求められるESSと、SPICEにSETモデルを組み込みCMOSとSETの高速同時シミュレーションを可能にしたSET-SPICEとを開発し、性能の検証を行った。また、MOSFET型単電子メモリーとSET型単電子メモリーの定常解析を行い、動作条件の検証を行った。(鳳) ・大規模な集積回路を構築できる可能性のあるものとして、単電子回路による多数決論理システムを提案した。基本ゲート回路を考案するとともにサブシステム(加算器、パリティ発生器、比較器)を設計し、論理動作をシミュレーション確認した。(雨宮) ・自己組織化InAs量子ドット構造中の伝導帯の電子状態を明らかにするため、遠赤外分光法により、InAs量子ドットのサブバンド間遷移スペクトルを測定した。その結果、量子ドット中の基底状態から複数の励起状態への遷移が観測された。特に、通常の有効質量近似の範囲内では禁止される遷移も観測され、このことはInAs量子ドットの伝導帯状態を表す波動関数がp軌道的な性質を含んでいることを示している。(平川) ・選択ド-ピングによる量子細線形成の検討、自然形成InAs量子ドットの量子細線上への自然配列の検討単一量子ドットおよび結合量子ドット中の電子準位の共鳴トンネリングによるスペクトロスコピー、デルタドープチャンネル量子細線を用いた量子ドットの帯電効果を観測を行った。

Research Products

(61 results)

All Other

All Publications (61 results)

[Publications] H.Sasaki: "″Formation of 10 nm-Scale Edge Quantum Wire Structures and Their Excitonic and Electronic Properties″(invited)" phys.stat.sol.(a). 164(1). 241-251 (1997)
[Publications] C.Metzner: "″Localization of Quantum Well Excitons by Lateral Disorder.A Numerical Study″" phys.stat.sol.(a). 164(1). 471-476 (1997)
[Publications] K.B.Nordstrom: "″Observation of Dynamical Franz-Keldysh Effect″" phys.stat.sol.(b). 204(1). 52 (1997)
[Publications] S.Tsujino: "″Saturation of Intersubband Absorption by Real-Space Transfer in Modulation Doped Single GaAs-AlAs Quantum Well″" phys.stat.sol.(b). 204(1). 162 (1997)
[Publications] M.Rufenacht: "″Oscillatory Behavior of Relaxation of Hot Electrons in a Biased Charge Transfer Double Quantum Well″" phys.stat.sol.(b). 204(1). 151 (1997)
[Publications] J.Kono: "″Terahertz Linear and Nonlinear Dynamics in Confined Magnetoexcitons″" phys.stat.sol.(a). 164(1). 567-570 (1997)
[Publications] M.Kuwata-Gonokami: "″Parametric Scattering of Cavity Polaritons″" Phys.Rev.Lett.79(7). 1341-1344 (1997)
[Publications] R.Sasagawa: "″Enhancement of intersubband transition energies in GaAs quantum wells by Si delta doping of hagh concentration″" Appl.Phys.Lett.76(6). 719-721 (1998)
[Publications] J.Kono: "″Resonant Terahertz Optical Sideband Generation fron Confined Magnetoexcitons″" Phys.Rev.Lett.79(9). 1758-1761 (1997)
[Publications] K.Masu: "″Concept of Dimensional Scaling in SET Circuits″" The 3rd International Workshop on Quantum Functional Devices,(QFD′97)NIST Gaithersburg,November 5-7,1997. WeS24. (1997)
[Publications] H.Matushashi: "″Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization MOSFET″" Ext.Abst.1997 Int.Conf.Solid State Device and Materials,Hamamatsu. 124-125 (1997)
[Publications] 横山道央: "「FSAM-MOSFETにおける寄生抵抗低減効果」" 電気情報通信学会技術報告(シリコン材料研究会). SDM97-96. 27-31 (1997)
[Publications] 松橋秀樹: "「Al CVDにおけるアルミ有機金属ソースガスの比較」" 電気情報通信学会技術報告(シリコン材料研究会). SDM97-96. 67-71 (1997)
[Publications] M.Yokoyama: "″Reduction of parasitic resistances in wide-fate fully-self-aligned-metallization (FSAM)MOSFET″" Advanced Metallization and Interconnect Systems for ULSI Applications in 1997:US Session,San Diego. (1997)
[Publications] H.Matsuhashi: "″Superiority of DMAH to DMEAA for Al CVD technology″" Advanced Metallization and Interconnect Systems for ULSI Applications in 1997:US Session,San Diego. (1997)
[Publications] H.Matsuhashi: "″Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization Metal-Oxide-Semiconductor Field-Effect-Transistor″" Jpn.J.Appl.Phys.((to be published))
[Publications] T.Hamano: "″Magnetotransport of Low Dimensional Electron Gas in InAs/AlGaSb Heterostructures″" Technol.Rept.of the Osaka Univ.vol.47. 61-69 (1997)
[Publications] S.Sasa: "″Atomic Force Microscope Nanofabrication of InAs/AlGaSb Heterostructures″" Jpn.J.Appl.Phys.vol.36. 4065-4067 (1997)
[Publications] T.Maemoto: "″Superconductor-semiconductor junctions with InAs/Al(Ga)Sb quantum wells″" Appl.Surf.Sci.117/118. 714-718 (1997)
[Publications] T.Maemoto: "″High Speed Quasi-One-Dimensional Electron Transport in InAs/AlGaSb Mesoscopic Devices″" Phys.Stat.Sol.(b)204. 255 (1997)
[Publications] S.Sasa, T.Ikeda: "″InAs/AlGaSb nanoscale device fabrication using AFM oxidation process″" Physica B. (to be published). (1998)
[Publications] S.Sasa: "″AFM fabrication and characterization of InAs/AlGaSb nanostructures″" Solid State Electronics. (to be published). (1998)
[Publications] Kenji Taniguchi: "″Future Prospects of Single-Electron-Tunneling(SET)-Based Digital Cirsuits″" FED Journal. Vol.7,Suppl.2. 32-37 (1997)
[Publications] Masaharu Kirihara: "″A Single Electron Neuron Device″" Jpn.J.Appl.Phys.Vol.36,No.6B. 4172-4175 (1997)
[Publications] Masaharu Kirihara: "″Asymmetric Single Electron Turnstile and Its Electronic Circuit Applications″" IEICE.Trans.Electron.Vol.E81-C No.1. 57-62 (1998)
[Publications] H.Fukui: "″Single-Electron Transistor in Silicon-on-Insulator with Schottky-Contact Tunnel Barriers″" Jpn.J.Appl.Phys.36,6B. 4147-4150 (1997)
[Publications] S.Amakawa: "″Correlated Electron-Hole Transport in Capacitively-Coupled One-Dimensional Tunnel Junction Arrays″" Jpn.J.Appl.Phys.36,6B. 4166-4171 (1997)
[Publications] M.Fujishima: "″Proposal of a Schottky-Barrier SET Aiming at a Future Integrated Device″" IEICE Trans.Electron.E80-C,7. 881-885 (1997)
[Publications] S.Amakawa: "″Single-Electron Circuit Simulation″" IEICE Trans.Electron. E81-C,1. 21-29 (1998)
[Publications] M.Fujishima: "″Circuit Simulators Aiming at Single-Electron Integration″" Jpn.J.Appl.Phys.37,2B(to be published). (1998)
[Publications] H.Majima: "″High-speed simulation of SET-CMOS mixed circuits″" Abstracts of Silicon Nanoelectronics Workshop. 40-41 (1997)
[Publications] M.Fujishima: "″Single-Electron Simulators for High and Low Level Analyses″" Extended Abstracts of the 1997 Int.Conf.on Solid State Devices and Materials. 308-309 (1997)
[Publications] S.Amakawa: "″High and Low Levels of Simulation of Single-Electron Circuits″" Proc.1997 Int.Semiconductor Device Research Symp.349-352 (1997)
[Publications] 大内真一: "「直接トンネリングを利用した単電子メモリの動作条件」" 第58回応用物理学会学術講演会講演予稿集. 4p-C-10. 153 (1997)
[Publications] 天川修平: "「SPICEによる単電子回路の解析」" 第58回応用物理学会学術講演会講演予稿集. 4p-C-8. 153 (1997)
[Publications] 神田浩一: "「単電子フラッシュメモリーのシミュレーション」" 平成10年春季第44回応用物理学関係連合講演会. (発表予定). (1998)
[Publications] Iwamura H.: "″Single-elctron majority logic circuits″" IEICE Trans.Electronics. Vol.E81-C,No.1. 42-48 (1998)
[Publications] Asahi N.: "″Single-electron logic systems based on the binary decision diagram″" IEICE Trans.Electronics. Vol.E81-C,No.1. 49-56 (1998)
[Publications] Akazawa M.: "″Annealing method for operating quantum-cellular-automaton systems″" J.Apple.Phys.Vol.82,No.10. 5176-5184 (1997)
[Publications] Akazawa M.: "″Eliciting the potential functions of single-electron circuits″" IEICE Trans.Electronics. Vol.E80-C,No.7. 849-858 (1997)
[Publications] Asahi N.: "″Single-electron logic device based on the binary decision diagram″" IEEE Trans.Electron Devices. Vol.44,No.7. 1109-1116 (1997)
[Publications] Tabe M.: "″Simulation of relaxation processes for non-equilibrium electron distribution in two-dimensional tunnel junction arrasy″" Jpn.J.Appl.Phys.Vol.36,1,No.6B. 4176-4180 (1997)
[Publications] Akazawa M.: "″Boltzmann machine neuron circuit using single-electron tunneling″" Appl.Phya.Lett.Vol.70,No.5. 670-672 (1997)
[Publications] Wu N-J.: "″Cellular-automaton circuits using single-electron-tunneling junctions″" Jpn.J.Appl.Phys.Vol.36,1,No.5A. 2621-2627 (1997)
[Publications] Y.Shimada: "″Time Constant for High-Field Domain Formation in Multiple Quantum Well Sequential Resonant Tunneling Diodes″" Jpn.J.Appl.Phys.vol.36,1,No.3B. 1944-1947 (1997)
[Publications] Y.Shimada: "″Sequential Resonant Magnetotunneling through Landau Levels in GaAs/AlGaAs Multiple Quantum Well Structures″" Physica Status Solidi(B). vol.204. 427-430 (1997)
[Publications] K.Yamanaka: "″Far Infrared Photoresponse of the Diagonal Magnetoresistance of the Two-Dimensional Electron System near the n=1 Spin-Gap Quantum Hall State″" Physica Status Solidi(B). vol.204. 310-313 (1998)
[Publications] H.Sasakibara: "″Interaction effects on cyclotron resonance in semiconductor double quantum well structures″" Surface Science. (to be published). (1998)
[Publications] Y.Shimada: "″Transport and optical properties of single quantum well infrared photodetectors″" Jpn.J.Appl.Phys.(to be published). (1998)
[Publications] N.Sekine: "″Terahertz emission from qunatum beats in coupled quantum wells″" Jpn.J.Appl.Phys.(to be published). (1998)
[Publications] K.Yamanaka: "″Far Infrared Photoresponse of the AlGaAs/GaAs Low-Dimensional Electron Systems Constricted by Split-Gates″" Soild State Electronics. (to be published). (1998)
[Publications] K.Yoh: "″Self-assemibled InAs Dots and Their Applications to Nanostructure Devices Grown on GaAs″" Inst.Phys.Conf.Ser.155. 829-832 (1997)
[Publications] N.Nishiguchi: "″Energy Dependent Effective Mass in Quantum Dots″" Jpn.J.Appl.Phys.Vol.36. 3928-3931 (1997)
[Publications] K.Yoh: "″Charging Effect of InAs Dots in Split-Gate High Electron Mobility Transistor Structure″" Jpn.J.Appl.Phys.Vol.36. 4143-4138 (1997)
[Publications] T.Nakano: "″A Novel Bistable Double-Barrier Resonant Tunnel Diode by Charging Effect of InAs Dots″" Jpn.J.Appl.Phys.Vol.36. 4283-4288 (1997)
[Publications] K.Yoh: "″Observation of Clear Quantized Conductance at 77K in Self-organized AlGaAs/GaAs Quantum Wires by Selective Doping″" Physica Status Solidi(b). 204. 259 (1997)
[Publications] K.Yoh: "″Bistability in Resonant Tunnel Diode Structure with InAs Quantum Dots″" Physica Status Solidi(b). 204. 378 (1997)
[Publications] T.Inoshita: "″Electron-Phonon Interaction and the So-Called Phonon Bottleneck in a Semiconductor Quantum dots″" Physica B. 227. 373-377 (1997)
[Publications] T.Inoshita: "″Density of States and Phonon-Induced Relaxation of Electrons in Semiconductor Quantum Dots″" Phys.Rev.vol.B56. 4355-4358 (1997)
[Publications] K.Hirakawa(分担執筆): "Springer" ″Mesoscopic Physics and Electronics″, 282 (1998)
[Publications] I.Tanaka.(分担執筆): "Imperial College Press" ″UVH-AFM Study of MBE-Grown 10nm-scale GaAs Ridge Structures for Quantum Wire Fabrication by the International Conference on Quantum Devices and Circuits″, 63-68 (1997)

1997 Fiscal Year Annual Research Report

単電子デバイスの創出とその回路・アーキテクチャの検討

Principal Investigator

榊 裕之 東京大学, 生産技術研究所, 教授 (90013226)

Research Products

[Publications] H.Sasaki: "″Formation of 10 nm-Scale Edge Quantum Wire Structures and Their Excitonic and Electronic Properties″(invited)" phys.stat.sol.(a). 164(1). 241-251 (1997)

[Publications] C.Metzner: "″Localization of Quantum Well Excitons by Lateral Disorder.A Numerical Study″" phys.stat.sol.(a). 164(1). 471-476 (1997)

[Publications] K.B.Nordstrom: "″Observation of Dynamical Franz-Keldysh Effect″" phys.stat.sol.(b). 204(1). 52 (1997)

[Publications] S.Tsujino: "″Saturation of Intersubband Absorption by Real-Space Transfer in Modulation Doped Single GaAs-AlAs Quantum Well″" phys.stat.sol.(b). 204(1). 162 (1997)

[Publications] M.Rufenacht: "″Oscillatory Behavior of Relaxation of Hot Electrons in a Biased Charge Transfer Double Quantum Well″" phys.stat.sol.(b). 204(1). 151 (1997)

[Publications] J.Kono: "″Terahertz Linear and Nonlinear Dynamics in Confined Magnetoexcitons″" phys.stat.sol.(a). 164(1). 567-570 (1997)

[Publications] M.Kuwata-Gonokami: "″Parametric Scattering of Cavity Polaritons″" Phys.Rev.Lett.79(7). 1341-1344 (1997)

[Publications] R.Sasagawa: "″Enhancement of intersubband transition energies in GaAs quantum wells by Si delta doping of hagh concentration″" Appl.Phys.Lett.76(6). 719-721 (1998)

[Publications] J.Kono: "″Resonant Terahertz Optical Sideband Generation fron Confined Magnetoexcitons″" Phys.Rev.Lett.79(9). 1758-1761 (1997)

[Publications] K.Masu: "″Concept of Dimensional Scaling in SET Circuits″" The 3rd International Workshop on Quantum Functional Devices,(QFD′97)NIST Gaithersburg,November 5-7,1997. WeS24. (1997)

[Publications] H.Matushashi: "″Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization MOSFET″" Ext.Abst.1997 Int.Conf.Solid State Device and Materials,Hamamatsu. 124-125 (1997)

[Publications] 横山道央: "「FSAM-MOSFETにおける寄生抵抗低減効果」" 電気情報通信学会技術報告(シリコン材料研究会). SDM97-96. 27-31 (1997)

[Publications] 松橋秀樹: "「Al CVDにおけるアルミ有機金属ソースガスの比較」" 電気情報通信学会技術報告(シリコン材料研究会). SDM97-96. 67-71 (1997)

[Publications] M.Yokoyama: "″Reduction of parasitic resistances in wide-fate fully-self-aligned-metallization (FSAM)MOSFET″" Advanced Metallization and Interconnect Systems for ULSI Applications in 1997:US Session,San Diego. (1997)

[Publications] H.Matsuhashi: "″Superiority of DMAH to DMEAA for Al CVD technology″" Advanced Metallization and Interconnect Systems for ULSI Applications in 1997:US Session,San Diego. (1997)

[Publications] H.Matsuhashi: "″Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization Metal-Oxide-Semiconductor Field-Effect-Transistor″" Jpn.J.Appl.Phys.((to be published))

[Publications] T.Hamano: "″Magnetotransport of Low Dimensional Electron Gas in InAs/AlGaSb Heterostructures″" Technol.Rept.of the Osaka Univ.vol.47. 61-69 (1997)

[Publications] S.Sasa: "″Atomic Force Microscope Nanofabrication of InAs/AlGaSb Heterostructures″" Jpn.J.Appl.Phys.vol.36. 4065-4067 (1997)

[Publications] T.Maemoto: "″Superconductor-semiconductor junctions with InAs/Al(Ga)Sb quantum wells″" Appl.Surf.Sci.117/118. 714-718 (1997)

[Publications] T.Maemoto: "″High Speed Quasi-One-Dimensional Electron Transport in InAs/AlGaSb Mesoscopic Devices″" Phys.Stat.Sol.(b)204. 255 (1997)

[Publications] S.Sasa, T.Ikeda: "″InAs/AlGaSb nanoscale device fabrication using AFM oxidation process″" Physica B. (to be published). (1998)

[Publications] S.Sasa: "″AFM fabrication and characterization of InAs/AlGaSb nanostructures″" Solid State Electronics. (to be published). (1998)

[Publications] Kenji Taniguchi: "″Future Prospects of Single-Electron-Tunneling(SET)-Based Digital Cirsuits″" FED Journal. Vol.7,Suppl.2. 32-37 (1997)

[Publications] Masaharu Kirihara: "″A Single Electron Neuron Device″" Jpn.J.Appl.Phys.Vol.36,No.6B. 4172-4175 (1997)

[Publications] Masaharu Kirihara: "″Asymmetric Single Electron Turnstile and Its Electronic Circuit Applications″" IEICE.Trans.Electron.Vol.E81-C No.1. 57-62 (1998)

[Publications] H.Fukui: "″Single-Electron Transistor in Silicon-on-Insulator with Schottky-Contact Tunnel Barriers″" Jpn.J.Appl.Phys.36,6B. 4147-4150 (1997)

[Publications] S.Amakawa: "″Correlated Electron-Hole Transport in Capacitively-Coupled One-Dimensional Tunnel Junction Arrays″" Jpn.J.Appl.Phys.36,6B. 4166-4171 (1997)

[Publications] M.Fujishima: "″Proposal of a Schottky-Barrier SET Aiming at a Future Integrated Device″" IEICE Trans.Electron.E80-C,7. 881-885 (1997)

[Publications] S.Amakawa: "″Single-Electron Circuit Simulation″" IEICE Trans.Electron. E81-C,1. 21-29 (1998)

[Publications] M.Fujishima: "″Circuit Simulators Aiming at Single-Electron Integration″" Jpn.J.Appl.Phys.37,2B(to be published). (1998)

[Publications] H.Majima: "″High-speed simulation of SET-CMOS mixed circuits″" Abstracts of Silicon Nanoelectronics Workshop. 40-41 (1997)

[Publications] M.Fujishima: "″Single-Electron Simulators for High and Low Level Analyses″" Extended Abstracts of the 1997 Int.Conf.on Solid State Devices and Materials. 308-309 (1997)

[Publications] S.Amakawa: "″High and Low Levels of Simulation of Single-Electron Circuits″" Proc.1997 Int.Semiconductor Device Research Symp.349-352 (1997)

[Publications] 大内真一: "「直接トンネリングを利用した単電子メモリの動作条件」" 第58回応用物理学会学術講演会講演予稿集. 4p-C-10. 153 (1997)

[Publications] 天川修平: "「SPICEによる単電子回路の解析」" 第58回応用物理学会学術講演会講演予稿集. 4p-C-8. 153 (1997)

[Publications] 神田浩一: "「単電子フラッシュメモリーのシミュレーション」" 平成10年春季第44回応用物理学関係連合講演会. (発表予定). (1998)

[Publications] Iwamura H.: "″Single-elctron majority logic circuits″" IEICE Trans.Electronics. Vol.E81-C,No.1. 42-48 (1998)

[Publications] Asahi N.: "″Single-electron logic systems based on the binary decision diagram″" IEICE Trans.Electronics. Vol.E81-C,No.1. 49-56 (1998)

[Publications] Akazawa M.: "″Annealing method for operating quantum-cellular-automaton systems″" J.Apple.Phys.Vol.82,No.10. 5176-5184 (1997)

[Publications] Akazawa M.: "″Eliciting the potential functions of single-electron circuits″" IEICE Trans.Electronics. Vol.E80-C,No.7. 849-858 (1997)

[Publications] Asahi N.: "″Single-electron logic device based on the binary decision diagram″" IEEE Trans.Electron Devices. Vol.44,No.7. 1109-1116 (1997)

[Publications] Tabe M.: "″Simulation of relaxation processes for non-equilibrium electron distribution in two-dimensional tunnel junction arrasy″" Jpn.J.Appl.Phys.Vol.36,1,No.6B. 4176-4180 (1997)

[Publications] Akazawa M.: "″Boltzmann machine neuron circuit using single-electron tunneling″" Appl.Phya.Lett.Vol.70,No.5. 670-672 (1997)

[Publications] Wu N-J.: "″Cellular-automaton circuits using single-electron-tunneling junctions″" Jpn.J.Appl.Phys.Vol.36,1,No.5A. 2621-2627 (1997)

[Publications] Y.Shimada: "″Time Constant for High-Field Domain Formation in Multiple Quantum Well Sequential Resonant Tunneling Diodes″" Jpn.J.Appl.Phys.vol.36,1,No.3B. 1944-1947 (1997)

[Publications] Y.Shimada: "″Sequential Resonant Magnetotunneling through Landau Levels in GaAs/AlGaAs Multiple Quantum Well Structures″" Physica Status Solidi(B). vol.204. 427-430 (1997)

[Publications] K.Yamanaka: "″Far Infrared Photoresponse of the Diagonal Magnetoresistance of the Two-Dimensional Electron System near the n=1 Spin-Gap Quantum Hall State″" Physica Status Solidi(B). vol.204. 310-313 (1998)

[Publications] H.Sasakibara: "″Interaction effects on cyclotron resonance in semiconductor double quantum well structures″" Surface Science. (to be published). (1998)

[Publications] Y.Shimada: "″Transport and optical properties of single quantum well infrared photodetectors″" Jpn.J.Appl.Phys.(to be published). (1998)

[Publications] N.Sekine: "″Terahertz emission from qunatum beats in coupled quantum wells″" Jpn.J.Appl.Phys.(to be published). (1998)

[Publications] K.Yamanaka: "″Far Infrared Photoresponse of the AlGaAs/GaAs Low-Dimensional Electron Systems Constricted by Split-Gates″" Soild State Electronics. (to be published). (1998)

[Publications] K.Yoh: "″Self-assemibled InAs Dots and Their Applications to Nanostructure Devices Grown on GaAs″" Inst.Phys.Conf.Ser.155. 829-832 (1997)

[Publications] N.Nishiguchi: "″Energy Dependent Effective Mass in Quantum Dots″" Jpn.J.Appl.Phys.Vol.36. 3928-3931 (1997)

[Publications] K.Yoh: "″Charging Effect of InAs Dots in Split-Gate High Electron Mobility Transistor Structure″" Jpn.J.Appl.Phys.Vol.36. 4143-4138 (1997)

[Publications] T.Nakano: "″A Novel Bistable Double-Barrier Resonant Tunnel Diode by Charging Effect of InAs Dots″" Jpn.J.Appl.Phys.Vol.36. 4283-4288 (1997)

[Publications] K.Yoh: "″Observation of Clear Quantized Conductance at 77K in Self-organized AlGaAs/GaAs Quantum Wires by Selective Doping″" Physica Status Solidi(b). 204. 259 (1997)

[Publications] K.Yoh: "″Bistability in Resonant Tunnel Diode Structure with InAs Quantum Dots″" Physica Status Solidi(b). 204. 378 (1997)

[Publications] T.Inoshita: "″Electron-Phonon Interaction and the So-Called Phonon Bottleneck in a Semiconductor Quantum dots″" Physica B. 227. 373-377 (1997)

[Publications] T.Inoshita: "″Density of States and Phonon-Induced Relaxation of Electrons in Semiconductor Quantum Dots″" Phys.Rev.vol.B56. 4355-4358 (1997)

[Publications] K.Hirakawa(分担執筆): "Springer" ″Mesoscopic Physics and Electronics″, 282 (1998)

[Publications] I.Tanaka.(分担執筆): "Imperial College Press" ″UVH-AFM Study of MBE-Grown 10nm-scale GaAs Ridge Structures for Quantum Wire Fabrication by the International Conference on Quantum Devices and Circuits″, 63-68 (1997)

榊裕之東京大学, 生産技術研究所, 教授 (90013226)