1999 Fiscal Year Annual Research Report

単電子デバイスの創出とその回路・アーキテクチャの検討

Research Project

Project/Area Number	08247104
Research Institution	The University of Tokyo
Principal Investigator	榊裕之東京大学, 生産技術研究所, 教授 (90013226)
Co-Investigator(Kenkyū-buntansha)	谷口研二大阪大学, 工学部, 教授 (20192180) 井上正崇大阪工業大学, 電気工学科, 教授 (20029325) 坪内和夫東北大学, 電気通信研究所, 教授 (30006283) 雨宮好仁北海道大学, 工学部, 教授 (80250489) 鳳紘一郎東京大学, 大学院・新領域創成科学研究科, 教授 (60211538)
Keywords	FETメモリー / SET寸法スケーリング / InAs系 / 非対称ターンスケール / 単電子回路シュミレーター / シングルエレクトロン多数決論理システム / サブバンド間遷移 / InAs量子ドット
Research Abstract	・量子ドット蓄積素子の動作を決める要因の検討を進め、ドット内電子の光学フォノンによる準位間の緩和過程や荷電ドットによる電子の散乱過程などについて新知見を得た。(榊) ・通常構造では最小トンネル容量1aFとしても室温動作CSETは実現困難である。ビットエネルギーを効果的に積分するマッチトフィルタ型室温動作CSETを提案した。(坪内) ・AFM陽極酸化プロセスによりInAsを直接酸化し、その酸化物が絶縁性を示すことがわかった。それを利用してインプレーンゲートを持つ単電子トランジスタを作製し、加工寸法が80nm程度と小さくなったことに対応し、振動周期が増大したクーロン振動を観測した。(井上) ・単電子回路シミュレータを用いて、擬似CMOS型NANDゲートと二入力NANDゲートの動作温度と電源電圧変動に対する動作安定性を評価し、後者の優位性を確認した。(谷口) ・単電子トンネリング過程での障壁形状の変化がトンネル電流に与える寄与を定量的に見積もった。またSiのバンド構造を考慮に入れた計算でMOS形浮遊ドット単電子メモリの書き込みと保持の設定条件を決定した。(鳳) ・量子ドットを用いたグラフ論理システムの概念を提案した。具体例として共有二分決定グラフにもとづくサブシステム回路を設計し、温度50-100Kでも動作することをシミュレーション上で確認した。(雨宮) ・高移動度変調ドープ量子井戸構造と自己組織化InAs量子ドットを組み合わせた構造で、bound-to-continuum型サブバンド間遷移を用いた中赤外光の高感度検出を実現するとともに、その物性の理解と高性能化への指針を得た。(平川) ・シリコン単電子トランジスタにシリコン微結晶によるメモリを融合させ、その特性を制御し、2つの単電子トランジスタを集積化することに成功した。(平本) ・量子ドット系に時間変動ポテンシャルを印加すると、直流のPATのみならず交流伝導にもPAT現象が起こることを明らかにした。(矢久保) ・抵抗体の熱雑音を考慮した単電子回路シミュレータを開発し、これを用いて抵抗結合型単電子論理回路の諸特性の温度特性を検討した。(吉川) ・側面チャネル型のCMOS融合型マルチ単電子メモリを新たに提案した。このメモリ素子実現の鍵を握る微細加工技術(L=20nm)と原子層吸着拡散を利用した極浅ソースドレイン接合形成技術を確立した。(小柳) ・カーボンナノチューブの走査型プローブ顕微鏡用探針としての可能性を示すとともに、InAs量子ドットを介した3D-0D共鳴トンネル現象、InAs量子ドット素子のメモリ動作を確認した。(水谷)

Research Products

(60 results)

All Other

All Publications (60 results)

[Publications] Ph. Lelong: "Capacitor feedback in double quantum dot plane"Inst. of Phys. Conf. Ser. 162 "Compound Semiconductor". 463-468 (1999)
[Publications] T. Inoshita: "Light scattering by landau-quantized electrons driven by intense terahertz radiation"Proc. Of 24^<th> Int. Conf. on the Physics of Semiconductor. 85 (1999)
[Publications] G. Yusa: "THz-near infrared upconversion in strain-induced quantum dots"Proc. Of 24^<th> Int. Conf. on the Physics of Semiconductor. 1183-1184 (1999)
[Publications] C. Metzner: "Modelling inter-dot Coulomb interaction effects in field effect transistors with an embedded quantum dot layer"Superlattices and Microstructures. 25, 3. 537-549 (1999)
[Publications] I. Tanaka: "Local surface band modulation with MBE-growth InAs quantum dots measured by atomic force microscopy with conductive tip"J. Cryst. Growth. 201/202. 1196-1197 (1999)
[Publications] I. Tanaka: "Imaging and probing electronic properties of self-assembled InAs quantum dots by atomic force microscopy with conductive tip"Appl. Phys. Lett.. 74, 6. 844-846 (1999)
[Publications] K. Masu: "Matched filter type SET circuit for room temperature operation"Extended abstracts of 1999 International Conference on Solid State Devices and Materials, Tokyo. 82-83 (1999)
[Publications] C.-H. Lee: "Crystallographic structures and farasitic resistances of self-aligned silicide TiSi2/self-aligned nitrided barrier layer/selective chemical vapor deposited aluminum in fully self-aligned metallization metal oxide semiconductor field-effect transistor"Jpn. J. Appl. Phys.. 38(10). 5835-5838 (1999)
[Publications] 西村隆生: "Direct liquid injection system を用いたAl-CVD堆積速度の向上"1999年春季第46回応用物理学関係連合講演会. 29p-ZQ-5. (1999)
[Publications] 島野哲: "マッチトフィルタ型SET論理回路の動作温度改善"1999年春季第46回応用物理学関係連合講演会. 28a-ZM-6. (1999)
[Publications] 西村隆生: "Direct liquid injection systemを用いたAl-CVD堆積速度の向上(II)"1999年秋季第60回応用物理学学術講演会. 1p-ZN-3. (1999)
[Publications] 西村隆生: "Direct liquid injection systemを用いたAl-CVD堆積速度の向上"2000年春季第47回応用物理学関係連合講演会. (2000)
[Publications] M. Yamauchi: "Electronic structure of nanometer-scale quantum dots created by a conductive atomic force microscope tip in resonant tunneling structures"Appl. Phys. Lett.. 74, 11. 1582-1584 (1999)
[Publications] H. Sakaki: "Control of electronic states in epitaxially synthesized quantum dot and wire structures and their potentials as new electronics and photonics materials"Phys. Stat. Sol. (b). 215. 291-296 (1999)
[Publications] 川津琢也: "自己形成ドットによる2次元電子の散乱と移動度"(99年秋季)応用物理学会講演予稿集. No.1,3a-D-7. (1999)
[Publications] Ph. Lelong: "自己組織化InAs量子ドット中のサブバンド間遷移におけるFano共鳴"(99年秋季)応用物理学会講演予稿集. No.1,4a-D-11. (1999)
[Publications] 平川一彦: "自己組織化InAs量子ドット中のサブバンド間遷移を用いた高感度中赤外光検出とFano共鳴"第3回「量子効果等の物理現象」シンポジウム. (1999)
[Publications] K Yakubo: "Transfer matrix approach to photon-assisted quantum transport in quantum point contacts"J. Phys. Soc. Jpn.. 68(8). 2729-2734 (1999)
[Publications] S. Sasa: "Coulomb blockade observed in InAs/AlGaSb nanostructures made by AFM oxidation process"Jpn. J. Appl. Phys.. 38. 480-482 (1999)
[Publications] S. Sasa: "Novel nanofabrication process for InAs/AlGaSb heterostructures utilizing AFM oxidation"Jpn. J. Appl. Phys.. 38. 1064-1066 (1999)
[Publications] J. G. Tischler: "High pressure magneto-optical studies of electrons in GaSb/AlSb/InAs heterostructures"The Physics of Semiconductors. (1999)
[Publications] S. Sasa: "Electron transport in a large spin-splitting 2DEG in InAs/AlGaSb heterostructures"Physica B. 272. 149-152 (1999)
[Publications] T. Maemoto: "Magnetotransport in InAs/AlGaSb quantum wires with a weak periodic potential"Physica B. 272. 110-113 (1999)
[Publications] S. Amakawa: "Scaling of single-electron tunneling current through ultrasmall tunnel junctions"Appl. Phys. Letters. (1999)
[Publications] N. Yoshikawa: "Single electron transfer logic gate family"Jpn. J. Appl. Phys.. 38. 433-438 (1999)
[Publications] Y. H. Song: "Ultra-shallow junction technology by rapid thermal annealing from lightly boron adsorbed layer"Proc. Int. Joint Conf. on Silicon Epitaxy and Heterostructures. (1999)
[Publications] Y. H. Song: "Ultra-shallow junction technology by rapid thermal annealing from boron adsorbed layer"1999 Silicon Nanoelectronics Workshop, Workshop Abstracts. 62-63 (1999)
[Publications] B. Jicheol: "Evaluations of dynamic threshold-voltage MOSFETs with modulated doping in Ge(x)Si(1-X)/Si strained layer heterostructures"1999 Silicon Nanoelectronics Workshop, Workshop Abstracts. 30-31 (1999)
[Publications] Y. H. Song: "Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer"Electronics Lett.. 35(5). 431-433 (1999)
[Publications] Y. H. Song: "A novel atomic layer doping technology for ultra-shallow junction in Sub-01μm MOSFETs"Digest of Int. Electron Devices Meeting 1999. 505-508 (1999)
[Publications] 坪倉岳志: "MOS型単電子メモリの動作機構"第47回応用物理学関係連合講演会(発表予定). (2000)
[Publications] M. Tabe: "Simulation of visible light induced effects in a tunnel junction array for Photonic device applications"Jpn. J. Appl. Phys.. 38(1)B. 593-596 (1999)
[Publications] T. Yamada: "A multiple-valued hopfield network device using single-electron circuits"IEICE Trans. Electronics. E82-C, No.9. 1615-1622 (1999)
[Publications] M. Akazawa: "Multiple-valued inverter using a single-electron-tunneling circuit"IEICE Trans. Electronics. E82-C, No.9. 1607-1614 (1999)
[Publications] N.-J. Wu: "Analog computation using coupled-quantum-dot spin glass"IEICE Trans. Electronics. E82-C, No.9. 1623-1629 (1999)
[Publications] T. Yamada: "Multiple-valued logic devices using single-electron circuits"International Workshop on Surfaces and Interfaces of Mesoscopic Devices (SIMD 99), Kaanapali, USA. (1999)
[Publications] Y. H. Song: "Ultra-shallow junction formation by rapid thermal annealing of arsenic-absorbed layer"Jpn. J. Appl. Phys.. 39. 26-30 (1999)
[Publications] S. Kumagai: "Detection of metastable cl+ions in time-modulated ICP by time resolved LIF"Extended Abstract of MNC'99. 150-151 (1999)
[Publications] S. Kumagai: "Density and temperature of metastable cl+ions in time-modulated ICP measured by time resolved LIF"Abstract of Electrochemical Society 1999 Join Int. Meeting. 676 (1999)
[Publications] 小柳光正: "極限CMOSデバイスとその動作特性"STARC Symp. 99予稿集. 26-38 (1999)
[Publications] 小柳光正: "ディープサブ0.1μmMOSデバイスの現状と課題"応用物理学会電子物性分科会予稿集. (1999)
[Publications] K. Asaoka: "Microscopic photoluminescence study of InAs quantum dots grown on (100) GaAS"Jpn. J. Appl. Phys.. 38(1)B. 546-549 (1999)
[Publications] S.-W. Lee: "Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures"Appl. Phys. Lett.. 75(10). 1428-1430 (1999)
[Publications] S.-W. Lee: "Self-Assembled InAs Quantum Dots and Its Application to Mid-Infrared Photodetectors"Physica E. (2000)
[Publications] Ph. Lelong: "Fano profile in intersubband transitions in InAs quantum dots"Physica E. (2000)
[Publications] S.-W. Lee: "Mid-infrared photodetector using self-assembled InAs quantum dots embedded in modulation doped GaAs quantum wells"MRS Symposia Proceedings Infrared Applications of Semiconductors III. 607. (2000)
[Publications] T. Hiramoto: "Quantum energy and charging energy in point contact MOSFETs acting as single electron transistors"Superlattices and Microstructures. 24(1/2). 263-267 (1999)
[Publications] H. Ishikuro: "Fabrication of nano-scale point contact metal-oxide-semiconductor field-effect-transistors using micrometer-scale design rule"Jpn. J. Appl. Phys.. 38(1)B. 396-398 (1999)
[Publications] Y. Ohno: "Photoluminescence study of resonant tunneling transistor with p+/n-junction gate"Jpn. J. Appl. Phys. 39(1). 35-40 (2000)
[Publications] Y. Ohno: "Observation of resonant tunneling through self-assembled InAs quantum dots using electro-photoluminescence spectroscopy"J. Appl. Phys.. (2000)
[Publications] T. Mizutani: "Memory operation of AlGaAs/GaAs heterostructure FETs with InAs quantum dots in an AlGaAs barrier layer"Int. Electron Devices Meeting. 234-237 (1999)
[Publications] Y. Ohno: "Observation of resonant tunneling through InAs Quantum dots by using novel electro-photoluminescence spectroscopy"Proc. of Indium Phosphide and Related Materials. 341-344 (1999)
[Publications] I. Kamiya: "Control of size and density of self-assembled InAs dots on (001) GaAs and the dot size dependent capping process"J. Cryst. Growth. 201/202. 1146-1149 (1999)
[Publications] N. Takahashi: "Control of coulomb blackade oscillations in silicon single electron transistor using silicon nano-crystal floating gates"Appl. Phys. Lett.. 76(2). 209-211 (2000)
[Publications] Y. Shi: "Effects of interface traps on charge retention characteristics in silicon-quantum-dot-based metal-oxide-semiconductor diodes"Jpn. J. Appl. Phys.. 38(1)B. 425-428 (1999)
[Publications] H. Ishikuro: "On the origin of tunneling barriers in silicon single electron and single hole transistors"Appl.Phys. Lett.. 74(8). 1126-1128 (1999)
[Publications] Y. Shi: "Characteristics of narrow channel MOSFET memory based on silicon nanocrystals"Jpn. J. Appl. Phys.. 38(4)B. 2453-2456 (1999)
[Publications] T. Hiramoto: "Coulomb blockade in VLSI-compatible multiple-dot and single-dot MOSFETs"International Journal of Electronics. 86(5). 591-603 (1999)
[Publications] T. Hiramoto: "Highly integrated single electron devices and giga-bit lithography"Journal of Photopolymer Science and Technology. 12(3). 417-422 (1999)
[Publications] E. Nagata: "Characteristic distributions of narrow channel metal-oxide-semiconductor field-effect-transistor memories with silicon nanocrystal floating gates"Jpn. J. Appl. Phys.. 38(12)B. 7230-7232 (1999)

1999 Fiscal Year Annual Research Report

単電子デバイスの創出とその回路・アーキテクチャの検討

Principal Investigator

榊 裕之 東京大学, 生産技術研究所, 教授 (90013226)

Research Products

[Publications] Ph. Lelong: "Capacitor feedback in double quantum dot plane"Inst. of Phys. Conf. Ser. 162 "Compound Semiconductor". 463-468 (1999)

[Publications] T. Inoshita: "Light scattering by landau-quantized electrons driven by intense terahertz radiation"Proc. Of 24^<th> Int. Conf. on the Physics of Semiconductor. 85 (1999)

[Publications] G. Yusa: "THz-near infrared upconversion in strain-induced quantum dots"Proc. Of 24^<th> Int. Conf. on the Physics of Semiconductor. 1183-1184 (1999)

[Publications] C. Metzner: "Modelling inter-dot Coulomb interaction effects in field effect transistors with an embedded quantum dot layer"Superlattices and Microstructures. 25, 3. 537-549 (1999)

[Publications] I. Tanaka: "Local surface band modulation with MBE-growth InAs quantum dots measured by atomic force microscopy with conductive tip"J. Cryst. Growth. 201/202. 1196-1197 (1999)

[Publications] I. Tanaka: "Imaging and probing electronic properties of self-assembled InAs quantum dots by atomic force microscopy with conductive tip"Appl. Phys. Lett.. 74, 6. 844-846 (1999)

[Publications] K. Masu: "Matched filter type SET circuit for room temperature operation"Extended abstracts of 1999 International Conference on Solid State Devices and Materials, Tokyo. 82-83 (1999)

[Publications] 西村隆生: "Direct liquid injection system を用いたAl-CVD堆積速度の向上"1999年春季第46回応用物理学関係連合講演会. 29p-ZQ-5. (1999)

[Publications] 島野哲: "マッチトフィルタ型SET論理回路の動作温度改善"1999年春季第46回応用物理学関係連合講演会. 28a-ZM-6. (1999)

[Publications] 西村隆生: "Direct liquid injection systemを用いたAl-CVD堆積速度の向上(II)"1999年秋季第60回応用物理学学術講演会. 1p-ZN-3. (1999)

[Publications] 西村隆生: "Direct liquid injection systemを用いたAl-CVD堆積速度の向上"2000年春季第47回応用物理学関係連合講演会. (2000)

[Publications] M. Yamauchi: "Electronic structure of nanometer-scale quantum dots created by a conductive atomic force microscope tip in resonant tunneling structures"Appl. Phys. Lett.. 74, 11. 1582-1584 (1999)

[Publications] H. Sakaki: "Control of electronic states in epitaxially synthesized quantum dot and wire structures and their potentials as new electronics and photonics materials"Phys. Stat. Sol. (b). 215. 291-296 (1999)

[Publications] 川津琢也: "自己形成ドットによる2次元電子の散乱と移動度"(99年秋季)応用物理学会講演予稿集. No.1,3a-D-7. (1999)

[Publications] Ph. Lelong: "自己組織化InAs量子ドット中のサブバンド間遷移におけるFano共鳴"(99年秋季)応用物理学会講演予稿集. No.1,4a-D-11. (1999)

[Publications] 平川一彦: "自己組織化InAs量子ドット中のサブバンド間遷移を用いた高感度中赤外光検出とFano共鳴"第3回「量子効果等の物理現象」シンポジウム. (1999)

[Publications] K Yakubo: "Transfer matrix approach to photon-assisted quantum transport in quantum point contacts"J. Phys. Soc. Jpn.. 68(8). 2729-2734 (1999)

[Publications] S. Sasa: "Coulomb blockade observed in InAs/AlGaSb nanostructures made by AFM oxidation process"Jpn. J. Appl. Phys.. 38. 480-482 (1999)

[Publications] S. Sasa: "Novel nanofabrication process for InAs/AlGaSb heterostructures utilizing AFM oxidation"Jpn. J. Appl. Phys.. 38. 1064-1066 (1999)

[Publications] J. G. Tischler: "High pressure magneto-optical studies of electrons in GaSb/AlSb/InAs heterostructures"The Physics of Semiconductors. (1999)

[Publications] S. Sasa: "Electron transport in a large spin-splitting 2DEG in InAs/AlGaSb heterostructures"Physica B. 272. 149-152 (1999)

[Publications] T. Maemoto: "Magnetotransport in InAs/AlGaSb quantum wires with a weak periodic potential"Physica B. 272. 110-113 (1999)

[Publications] S. Amakawa: "Scaling of single-electron tunneling current through ultrasmall tunnel junctions"Appl. Phys. Letters. (1999)

[Publications] N. Yoshikawa: "Single electron transfer logic gate family"Jpn. J. Appl. Phys.. 38. 433-438 (1999)

[Publications] Y. H. Song: "Ultra-shallow junction technology by rapid thermal annealing from lightly boron adsorbed layer"Proc. Int. Joint Conf. on Silicon Epitaxy and Heterostructures. (1999)

[Publications] Y. H. Song: "Ultra-shallow junction technology by rapid thermal annealing from boron adsorbed layer"1999 Silicon Nanoelectronics Workshop, Workshop Abstracts. 62-63 (1999)

[Publications] B. Jicheol: "Evaluations of dynamic threshold-voltage MOSFETs with modulated doping in Ge(x)Si(1-X)/Si strained layer heterostructures"1999 Silicon Nanoelectronics Workshop, Workshop Abstracts. 30-31 (1999)

[Publications] Y. H. Song: "Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer"Electronics Lett.. 35(5). 431-433 (1999)

[Publications] Y. H. Song: "A novel atomic layer doping technology for ultra-shallow junction in Sub-01μm MOSFETs"Digest of Int. Electron Devices Meeting 1999. 505-508 (1999)

[Publications] 坪倉岳志: "MOS型単電子メモリの動作機構"第47回応用物理学関係連合講演会(発表予定). (2000)

[Publications] M. Tabe: "Simulation of visible light induced effects in a tunnel junction array for Photonic device applications"Jpn. J. Appl. Phys.. 38(1)B. 593-596 (1999)

[Publications] T. Yamada: "A multiple-valued hopfield network device using single-electron circuits"IEICE Trans. Electronics. E82-C, No.9. 1615-1622 (1999)

[Publications] M. Akazawa: "Multiple-valued inverter using a single-electron-tunneling circuit"IEICE Trans. Electronics. E82-C, No.9. 1607-1614 (1999)

[Publications] N.-J. Wu: "Analog computation using coupled-quantum-dot spin glass"IEICE Trans. Electronics. E82-C, No.9. 1623-1629 (1999)

[Publications] T. Yamada: "Multiple-valued logic devices using single-electron circuits"International Workshop on Surfaces and Interfaces of Mesoscopic Devices (SIMD 99), Kaanapali, USA. (1999)

[Publications] Y. H. Song: "Ultra-shallow junction formation by rapid thermal annealing of arsenic-absorbed layer"Jpn. J. Appl. Phys.. 39. 26-30 (1999)

[Publications] S. Kumagai: "Detection of metastable cl+ions in time-modulated ICP by time resolved LIF"Extended Abstract of MNC'99. 150-151 (1999)

[Publications] S. Kumagai: "Density and temperature of metastable cl+ions in time-modulated ICP measured by time resolved LIF"Abstract of Electrochemical Society 1999 Join Int. Meeting. 676 (1999)

[Publications] 小柳光正: "極限CMOSデバイスとその動作特性"STARC Symp. 99予稿集. 26-38 (1999)

[Publications] 小柳光正: "ディープサブ0.1μmMOSデバイスの現状と課題"応用物理学会電子物性分科会予稿集. (1999)

[Publications] K. Asaoka: "Microscopic photoluminescence study of InAs quantum dots grown on (100) GaAS"Jpn. J. Appl. Phys.. 38(1)B. 546-549 (1999)

[Publications] S.-W. Lee: "Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures"Appl. Phys. Lett.. 75(10). 1428-1430 (1999)

[Publications] S.-W. Lee: "Self-Assembled InAs Quantum Dots and Its Application to Mid-Infrared Photodetectors"Physica E. (2000)

[Publications] Ph. Lelong: "Fano profile in intersubband transitions in InAs quantum dots"Physica E. (2000)

[Publications] S.-W. Lee: "Mid-infrared photodetector using self-assembled InAs quantum dots embedded in modulation doped GaAs quantum wells"MRS Symposia Proceedings Infrared Applications of Semiconductors III. 607. (2000)

[Publications] T. Hiramoto: "Quantum energy and charging energy in point contact MOSFETs acting as single electron transistors"Superlattices and Microstructures. 24(1/2). 263-267 (1999)

[Publications] H. Ishikuro: "Fabrication of nano-scale point contact metal-oxide-semiconductor field-effect-transistors using micrometer-scale design rule"Jpn. J. Appl. Phys.. 38(1)B. 396-398 (1999)

[Publications] Y. Ohno: "Photoluminescence study of resonant tunneling transistor with p+/n-junction gate"Jpn. J. Appl. Phys. 39(1). 35-40 (2000)

[Publications] Y. Ohno: "Observation of resonant tunneling through self-assembled InAs quantum dots using electro-photoluminescence spectroscopy"J. Appl. Phys.. (2000)

[Publications] T. Mizutani: "Memory operation of AlGaAs/GaAs heterostructure FETs with InAs quantum dots in an AlGaAs barrier layer"Int. Electron Devices Meeting. 234-237 (1999)

[Publications] Y. Ohno: "Observation of resonant tunneling through InAs Quantum dots by using novel electro-photoluminescence spectroscopy"Proc. of Indium Phosphide and Related Materials. 341-344 (1999)

[Publications] I. Kamiya: "Control of size and density of self-assembled InAs dots on (001) GaAs and the dot size dependent capping process"J. Cryst. Growth. 201/202. 1146-1149 (1999)

[Publications] N. Takahashi: "Control of coulomb blackade oscillations in silicon single electron transistor using silicon nano-crystal floating gates"Appl. Phys. Lett.. 76(2). 209-211 (2000)

[Publications] Y. Shi: "Effects of interface traps on charge retention characteristics in silicon-quantum-dot-based metal-oxide-semiconductor diodes"Jpn. J. Appl. Phys.. 38(1)B. 425-428 (1999)

[Publications] H. Ishikuro: "On the origin of tunneling barriers in silicon single electron and single hole transistors"Appl.Phys. Lett.. 74(8). 1126-1128 (1999)

[Publications] Y. Shi: "Characteristics of narrow channel MOSFET memory based on silicon nanocrystals"Jpn. J. Appl. Phys.. 38(4)B. 2453-2456 (1999)

[Publications] T. Hiramoto: "Coulomb blockade in VLSI-compatible multiple-dot and single-dot MOSFETs"International Journal of Electronics. 86(5). 591-603 (1999)

[Publications] T. Hiramoto: "Highly integrated single electron devices and giga-bit lithography"Journal of Photopolymer Science and Technology. 12(3). 417-422 (1999)

[Publications] E. Nagata: "Characteristic distributions of narrow channel metal-oxide-semiconductor field-effect-transistor memories with silicon nanocrystal floating gates"Jpn. J. Appl. Phys.. 38(12)B. 7230-7232 (1999)

榊裕之東京大学, 生産技術研究所, 教授 (90013226)