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2000 Fiscal Year Final Research Report Summary

Synthesis of Single Electron Devices and Investigation of Their Circuits and Systems

Research Project

Project/Area Number 08247104
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Research InstitutionUniversity of Tokyo

Principal Investigator

SAKAKI Hiroyuki  Institute of Industrial Science, University of Tokyo Professor, 生産技術研究所, 教授 (90013226)

Co-Investigator(Kenkyū-buntansha) TANIGUCHI Kenji  Osaka University, Department of Electronics and Information Systems, Professor, 工学研究科, 教授 (20192180)
INOUE Masataka  Osaka Institute of Technology, Electrical Engineering, Professer, 電気工学科, 教授 (20029325)
TSUBOUCHI Kazuo  Tohoku University, Research Institute of Electrical Communication, Professor, 電気通信研究所, 教授 (30006283)
AMEMIYA Yoshihito  Hokkaido University, Graduate School of Engineering, Professor, 工学研究科, 教授 (80250489)
HOU Koichiro  University of Tokyo, Graduate School of Frontier Sciences, Professor, 新領域創成科学研究科, 教授 (60211538)
Project Period (FY) 1996 – 1999
KeywordsSingle electron transistor / Quantum dot / Single electron memory / Quantum dot detector / SOI-MOS device / Binary decision diagram / Photon assisted tunneling / SET modeling
Research Abstract

We investigated a variety of single-electron (SE) and quantum dot (QD) devices and their circuits and systems to explore ways to achieve better performances and unprecedented functions, as summarized below.
(l) (GaAs/AlGaAs) FETs with embedded InAs QDs were newly developed. Their memory and photodetector functions were demonstrated by trapping a single electron or hole in each dot. (2) GaSb/InAs systems were selectively oxidized by a conductive AFM tip to form a SE transistor (SET) with clearcut characteristics. (3) Novel LSI-compatible fabrication method was developed to squeeze a Si SOI-MOS channel into a quantum point contact geometry. The device exhibited clear SET characteristics even at 300K and was used to form a binary-decision current switch element. (4) Improved methods to model and simulate SE transistors and memories were developed on the basis of the master rate equation or an extended SPICE framework. Bit error rates of large scale SET systems were assessed and requirements on the normalized bit energy (Eb/kT) and residual charges were clarified. Matched filter logic circuits were proposed to avoid the inherent instability of SET systems. (5) New SET architectures, such as binary decision diagrams, majority logic, and multi-valued logic using multi-electron states, were proposed and their features clarified. (6) Moreover, the response of SE and QD systems to midinfrared (MIR) and THz waves were investigated. New MIR detectors using the photoionization of trapped electrons in QDs were successfully developed. Photon assisted tunneling processes were analysed for triple- barrier SET geometries and were shown to have responsivity ten thousand times as large as that for double barrier geometries.

  • Research Products

    (198 results)

All Other

All Publications (198 results)

  • [Publications] T.T.Ngo: ""Simulation model for self ordering of strained islands in molecular beam epitaxy""Phys.Rev.B. 53. 9618-9621 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.Dixon: "Influence of energy level alignment on tunneling between coupled quantum dots."Phys.Rev.B. 53. 12625-12628 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] P.D.Wang: "Magneto luminescence studies of Iny All-yAs self-asssembled quaaantum dots in AlGaAs matricesl"Phys.Rev.B. B53(24). 16458-16461 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Akiyama: "Concentrated oscillaton strength of one-dimensional excitons in quantum wires observed with photoluminescence excitation spectroscopy"Phys.Rev.B. B53(24). R16160-R15163 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Ohno: "Magnetotransport and interlalyer-edge channel tunneling of two-dimensional electrons in a double quantum well system"Phys.Rev.. B54(4). R2319-R2322 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.Dixon: "Linear and non-linear transport through coupled quantum dots"Surf.Soc.. vol.361-362. 636-639 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] L.P.Kouwenhoven: "High-frequency transport through mesoscopic structures"Surf.Sci.. vol.361-362. 591-594 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Ohno: "Suppression of resonant tunneling in a coupled quantum well"Surf.Sci. 361-362. 142-145 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Nakamura: "Surface smoothness and step bunching on GaAs (111)B facet formed by molecular beam epitaxy"Jpn J.Appl.Phys.. 35(7). 4038-4039 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Kono: "Terahertz photoresponse of quantum wires in magnetic fields"Superlattices and Microstructures. 20. 383-387 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Nakamura: "Large conductance anisotropy in a novel two dimensional electron system grown on vicinal (111)B GaAs with multi-atomic steps"Appl.Phys.Lett. 69(26). 4093-4095 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Narihiro: "Resonant tunneling of electrons via 20 nm-scale InAs quantum dot and magnetotunneling spectroscopy of its electronic states"Appl.Phys.Lett. 70(1). 105-107 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Kadoya: "Effect of oxygen incorporation at AlGaAs/GaAs interfaces on the electrical properties of two-dimentional electron gas :"Appl.Phys.Lett.. 70(5). 595-597 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Koshiba: "Ultrahigh vacuum atomic force microscope study of 10-30 nm-scale GaAs ridge structure formation by molecular beam epitaxy"Appl.Phys.Lett.. 70(7). 883-885 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Rufenacht: "Delayed luminescence induced by intersubband optical excitation in a charge transfer double quantum well structure"Appl.Phys.Lett.. 70(9). 1128-1130 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] G.Yusa: "Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures"Appl.Phys.. 70. (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Nakamura: "Formation of multi-atomic steps and novel n-AlGaAs/GaAs hetero junctions on vicinal (111)B substrates by MBE and anisotropic transport of 2D electrons"J.Cryst.Growth.. 175-176. 1091-1095 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] G.Yusa: "MBE growth of novel GaAs/n-AlGaAs field-effect transistor structures with embedded InAs quantum traps and their transport characteristics"J.Cryst.Growth. 175-176. 729-734 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Koshiba: "UHV-AFM Study of MBE grown 10-nm scale ridge quantum wires"J.Crystal Growth. 175-176. 803-807 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Noda: "Selective MBE growth of GaAs wire and dot structures using atomic hydrogen and their electronic properties"J.Cryst.Growth. 175-176. 786-791 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 秋山英文: "自由電子レーザー・炭酸ガスレーザーを用いた半導体量子細線・井戸構造の赤外分光"固体物理. 31(4). 13-20 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Narihiro: "Magneto-tunneling study of zero-dimensional electronic states in self-organized InAs quantum dot High Magnetic Fields in the Physics of Semiconductors II"Vol.1 ed.G.Landwehr and W.Ossau, World Scientific. 477 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Inoshita: "Electron-phonon interaction and the so-called phonon bottleneck in a semiconductor quantum dots", Physica B 227 (1997) pp.373-377"Physica. B227. 373-377 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Inoshita: "Density of states and phonon-induced relaxation ofelectrons in semiconductor quantum dots"Phys.Rev.. B56. 4355-4358 (1997)

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      「研究成果報告書概要(和文)」より
  • [Publications] M.Kuwata-Gonokami: "Parametric scattering of cavity polaritons."Rev.Left.. 79, No.7. 1341-1344 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Kono: "Resonant terahertz optical sideband generation from confined magnetoexcitons"Phys.Rev.. vol.79, No.9. 1758-1761 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Akiyama: "Spectroscopy of one-dimensional excitons in GaAs quantum wires"Materials Science Engineering. B48. 126-130 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Tsujino: "Saturation of intersubband absorption by real-space transfer in modulation doped single GaAs-AlAs quantum well"phys.stat.sol.. (b)204, No1. 162 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Rufenacht: "Oscillatory behavior of relaxation of hot electrons in a biased charge transfer double quantum well"phys.stat.sol.. (b) 204 No.1. 151 (1997)

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      「研究成果報告書概要(和文)」より
  • [Publications] K.B.Nordstrom: "Observation of dynamical Franz-Keldysh effect"phys.stat.sol.. (b) 204 No.1. 223-52-229 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Sakaki: "Formation of 10 nm scale edge quantum wire structures and their excitonic and electronic properties"phys.stat.sol.Bulletin. (a) 164 No.1. 241-251 (1997)

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      「研究成果報告書概要(和文)」より
  • [Publications] C.Metzner: "Localization of quantum well excitons by lateral disorder. a numerical study"phys.stat.sol.. (a) 164, No.1. 471-476 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Kono: "Terahertz linear and nonlinear dynamics in confined magnetoexcitons"phys.stat.sol.. (a) 164, No.1. 567-570 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] R.Sasagawa: "Enhancement of intersubband transition energies in GaAs quantum wells by Si delta doping of high concentration"Appl.Phys.Lett.. vol.72, No.6. 719-721 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Akiyama: "Photoluminescence study of lateral confinement energy in T shaped InGaAs quantum wires"Phys.Rev.. B57. 3765 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Yoshita: "Microphotoluminescence characterization of cleaved edge overgrowth T-shaped InxGal-xAs quantum wire"Appl.Phys.. Vol.83. 3777-3783 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] I.Kamiya: "Optical properties of near surface-InAs quantum dots and their formation processes"Physica E. Vol.2. 637-642 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] G.Yusa: "Trapping of a single photogenerated hole by an InAs quantum dot in GaAs/n-AlGaAs quantum trap FET and its spectral response in the near infrared regime"Physica E. Vol.2. 734-737 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.Qureshi: "Terahertz excitation of AFM-defined room temperature quantum dots"Physica E. Vol.2. 701-703 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Nakamura: "Novel magneto-resistance oscillations in laterally modulated two dimensional electrons with 20nm periodicity formed on vicinal GaAs (111)B substrates"Physica E. Vol.2. 944-948 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Nagamune: "Time resolved carrier drag effect in quantum wells and wires"Physica E. Vol.2. 843-849 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Kim: "Formation of GaAs/AlGaAs constricted-channel field-effect transistor structures by focused Ga implantation and transport of electrons via focused ion beam induced localized states"J.Vac.Sci.Technol.. B16(4). (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Watanabe: "Stimulated emission in ridge quantum wire laser structures measured with optical pumping and microscopic imaging methods"Appl.Phys.Lett.. Vol.73(4). 511-513 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Kono: "Terahertz dynamics in confined magnetoexcitons"Physica B. Vol.249-251. 527-533 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Inoshita: "Mixing of terahertz and near-infrared radiation in quantum wells in strong magnetic fields"Physica B. Vol.249-251. 534-537 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Tsujino: "Negative vertical photovoltaic response of two dimensional electrons in the quantum Hall regime"Physica B. Vol.249-251. 571-574 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Rufenacht: "Transient negative photoconductance in a charge transfer double quantum well under optical intersubband excitation"Physica B. Vol.249-251. 723-726 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 榊裕之(江沢洋 編): "量子ナノ構造-低次元電子系の物理と機能創出-"(別冊)数理科学「20世紀の物理学」. 188-195 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 井下猛: "量子井戸におけるテラヘルツ共鳴サイドバンド発生"日本物理学会誌. Vol.53(9). 700-703 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Sakaki: "10nm-scale edge-and step quantum wires and related structures : Progress in their design, epitaxial synthesis and physics"Physica. E4. 56-64 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] G.Yusa: "InAs quantum dot field effect transistors"Superlattices and Microstructures. Vol.25, No.1/2. (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 平川一彦: "物理学の新局面を拓いた分数量子ホール効果"現代化学. 36. (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] I.Tanaka: "Imaging and probing electronic properties of self-assembled InAs quantum dots by atomic force microscopy with conductive tip"Appl.Phys.Lett.. vol.74, No.6. 844-846 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Yamauchi: "Electronic structure of nanometer-scale quantum dots created by a conductive atomic force microscope tip in resonant tunneling structures"App.Phys.Lett.. vol.74, No.11. 1582-1584 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Yoshita: "Carrier transfer in facet-growth GaAs quantum wells studied by solid immersion photoluminescence microscopy"Inst.of Phys.Conf.Ser.. 162. 143-148 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Koshiba: "Fabrication and control of GaAs/AlAs 10 nano-meter scale structure by MBE"Trans.of Materials Research Soc.of Japan. 24[1]. 93-96 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Koshiba: "Selective molecular beam epitaxy (MBE) growth of GaAs/AlAs ridge structures containing 10nm scale wires and side quantum wells (QWs) and their stimulated emission characteristics"J.Cryst.Growth. 201/202. 810-813 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] I.Tanaka: "Local surface band modulation with MBE-grown InAs quantum dots measured by atomic force microscopy with conductive tip"J.Cryst.Growth. 201/202. 1194-1197 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] I.Kamiya: "Control of size and density of self-assembled InAs dots on (001)GaAs and the dot size dependent capping process"J.Cryst.Growth. 201/202. 1146-1149 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Matsusue: "Coherent dynamics of excitons in an Island-Inserted GaAs/AlAs quantum well structure : Suppression of phase relaxation and a deep quantum beat"Jpn.J.Appl.Phys.. 38. 2735-2740 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Fukumura: "Spontaneous bubble domain formation in a layered ferromagnetic crystal"Science. 284, 5422. 1881-2044 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Sakaki: "Control of electronic states in epitaxially synthesized quantum dot and wire structures and their potentials as new electronics and photonics materials",,pp, 1999.09"Phys.Stat.Sol.. (b) 215. 291-296 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Watanabe: "Microscopy of electronic states contributing to lasing in ridge quantum-wire laser structure"Appl.Phys.Lett. 75, 15. 2190-2192 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Fukumura: "Development of a scanning Hall probe microscope for simultaneous magnetic and topographic imaging"Micron. 30. 575-578 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Tanaka: "Anomalous conductance quantization in a novel quantum point contact with periodic (16nm) potential modulation"Physica. E, 6. 558-560 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.Kishimoto: "Effect of substrate rotation on inter-surface diffusion in MBE for mesa-structure fabrication"J.of Crystal Growth. 209. 591-598 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Ph.Lelong: "Fano profile in Intersubband transitions in InAs quantum dots"Physica. E7. 174-178 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.Kishimoto: "(111)B growth elimination in GaAs MBE of (001)-(111)B mesa structure by suppressing 2D-nucleation"Journal of Crystal Growth. 212. 373-378 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 笹川隆平: "量子井戸を吸収層と検出層に用いた波長選択性赤外ボロメータ素子の提案と特性解析"電子情報通信学会論文誌. C vol.J83-C. 525-532 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Kim: "Quantum storage effects in n-AlGaAs/GaAs heterojunction FETs with embedded InAs QDs and localized states iniduced b Ga-FIB implantation"Physica. E7. 435-439 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Matsuhashi: "Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization Metal-Oxide-Semiconductor Field-Effect-Transistor"Jpn.J.Appl.Phys.. 37. 3264-3267 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Shimano: "Reliability of Single Electron Transistor Circuits Based on Eb/No-BER Characteristics"Jpn.J.Appl.Phys.. 38(1B). 403-405 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] C.H.Lee: "Crystallographic Structure and Parasitic Resistances of Self-Aligned Siliside TiSi2/Self-Aligned Nitrided Barrier-Layer/Selective Chemical Vapor Deposited Aluminum in fully Self-Aligned Metallization Metal-Oxide-Semiconductor Field-Effect-Transistor"Jpn.J.Appl.Phys.. 38. 5835-5838 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Matsuhashi: "Superiority of DMAH to DMEAA for Al CVD Technology, submitted to Materials Science in Semiconductor Processing,"2. 303-308 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Sasa: "High Field Transport Properties of InAs/AlGaSb Quantum Wires"Physica. B227. 363 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Inoue: "Low-dimensional electron transport properties in InAs/AlGaSb mesoscopic structures"Superlattices and Microstructures. 21. (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Kono: "Terahertz Photoresponse of Quantum Wires in Magnetic Fields"Superlattices and Microstructures. 20. 383 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Osako: "Quantum anti-dot arrays and quantum wire transistors fabricated on InAs/Al0.5Ga0.5Sb heterostructures"Semicond.Sci.& Technol.. 11. 571 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Sasa: "Atomic Force Microscope Nano-fabrication of InAs/AlGaSb Heterostructures"Jpn.J.Appl.Phys. 36. 4067 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Sasa: "Superconductor-semiconductor junctions with InAs/Al(Ga)Sb quantum wells"Appl.Surf.Sci.. 117/118. 714 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Maemoto: "High Speed Quasi-One Dimensional Electron Transport in InAs/AlGaSb Mesoscopic Devices"Phys.Stat.Sol.. 204. 255 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Sasa: "AFM fabrication and characterization of InAs/AlGaSb nanostructures"Solid-State Electronics. 42. 1069 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Sasa: "InAs/AlGaSb nanoscale device fabrication using AFM oxidation process"Physica. E, 2. 858 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Osako: "Magnetophonon and magneto intersubband-scattering effects in InAs/AlGaSb heterostructures"Physica B. 249-251. 740 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Sasa: "Coulomb blockade observed in InAs/AlGaSb nanostructures produced by an atomic force microscope oxidation process"Jpn.J.Appl.Phys.. 38. 480 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Sasa: "Novel nanofabrication process for InAs/AlGaSb heterostructures utilizing AFM oxidation"Jpn.J.Appl.Phys.. 38. 1064 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Sasa: "Electron transport in a large spin-splitting 2DEG in InAs/AlGaSb heterostructures"Physica. B272. 149 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Maemoto: Physica B. 272. 110 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kenji Taniguchi: "Future Prospects of Single-Electron-Tunneling (SET)-Based Digital Cirsuits"FED Journal. Vol.7, Suppl.2. 32-37 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Masaharu Kirihara: "A Single Electron Neuron Device"Jpn.J.Appl.Phys.. Vol.36, No.6B. 4172-4175 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Masaharu Kirihara: "Asymmetric Single Electron Turnstile and Its Electronic Circuit Applications"IEICE.Trans.Electron. Vol.E81-C, No.1,. 57-62 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 宮川修一: "SPM超微細酸化法を用いた単一電子デバイスの作成",C-II,,pp. (March 1998)."電子情報通信学会論文誌. Vol.J81-C-II No.3. 285-290 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Shuichi Miyakawa: "Single Electron Transistors Fabricated with AFM Ultrafine Nanooxidation Process"ELECTRONICS and COMMUNICATIONS in JAPAN, PART II : Electronics. Vol.81, No.10. 12-18 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Fukui: "Single-Electron Transistor in Silicon-on-Insulator with Schottky-Contact Turnnel Barriers"Jpn.J.Appl.Phys.. 36. 4147 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Amakawa: "Correlated Electron-Hole Transport in Capacitively-Coupled One Dimensional Tunnel Junction Arrays,"(1997)."Jpn.J.Appl.Phys. 36. 4166 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Fujishima: "Proposal of a Schottky-Barrier SET Aiming at a Future Integrated Device,."IEICE Trans.Electron. E80-C. 881 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Amakawa: "Single-Electron Circuit Simulation"IEICE Trans.Electron.. E81-C. 21 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Amakawa: "A Simple Model of a Single-Electron Floating Dot Memory for Circuit Simulation"Jpn.J.Appl.Phys.. 38. 429 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Amakawa: "Scaling of the Single-Electron Tunneling Current through Ultrasmall Tunnel Junctions"J.Phys.C : Condensed Matter. 12. 7223 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.T.Ngo, P.M.Petroff, H.Sakaki, and J.L.Merz: "Simulation model for self ordering of strained islands in molecular beam epitaxy"Phy.Rev.B. 53 (15). 9618-9621 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] D.Dixon, L.P.Kouwenhoven, P.L.McEuen., Y Nagamune, J.Motohisa and H.Sakai: "Influence of energy level alignment on tunneling between coupled quantum dots"Phys.Rev.B. vol.53, no.19. 12625-12628 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] P.D.Wang, J.L.Merz, S.Fafard, R.Leon. D.Leonard, G.Medeiros-Ribeiro, M.Oestreich, P.M.Petroff, K.Uchida, N.Miura, H.Akiyama and H.Sakaki: "Magneto Iuminescence studies of Iny All-yAs self-asssembled quaaantum dots in AIGaAs matrices"Phys.Rev.B. 53 (24). 16458-16461 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Akiyama, T.Someya and H.Sakaki: "Concentrated oscillaton strength of one-dimensional excitons in quantum wires observed with photoluminescence excitation spectroscopy"Phys.Rev.B. 53 (24). R16160-R15163 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Ohno, M.Foley, and H.Sakaki: "Magnetotransport and interlalyer-edge channel tunneling of two-dimensional electrons in a double quantum well system"Phys.Rev.B. 54 (4). R2319-R2322 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] D.Dixon, L.P.Kouwenhoven, P.L.McEuen, Y.Nagamune, J.Motohisa and H.Sakaki: "Linear and non-linear transport through coupled quantum dots"Surf.Sci.. vol. 361-362. 636-639 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] L.P.Kouwenhoven, N.C van der Vaart, Yu.V.Nazarov, S.Jauhar., D.Dixon, K.McCormick, J.Orenstein, P.L.McEuen, Y.Nagamune, J.Motohisa and H.Sakaki: "High-frequency transport through mesoscopic structures"Surf.Sci.. vol. 361-362. 591-594 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Ohno and H.Sakaki: "Suppression of resonant tunneling in a coupled quantum well"Surf.Sci.. 361-362. 142-145 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Nakamura, I.Tanaka, N.Takeuchi, S.Koshiba, H.Noge, and H.Sakaki: "Surface smoothness and step bunching on GaAs (111) B facet formed by molecular beam epitaxy"Japanese Journal of Applied Physics.. 38. 1115-1118 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Kono, Y.Nakamura, X.G.Peralta, J.Cerne, S.J.Allen, H.Akiyama, T.Sugihara, S.Sasa, and M.Inoue: "Terahertz photoresponse of quantum wires in magnetic fields"Superlattices and Microstructures. 20. 383-387 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Nakamura, S.Koshiba and H.Sakaki: "Large conductance anisotropy in a novel two dimensional electron system grown on vicinal (111) B GaAs with multi-atomic steps"Appl.Phys.Lett.. 69 (26). 4093-4095 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Narihiro, G.Yusa, Y.Nakamura, T.Noda, and H.Sakaki: "Resonant tunneling of electrons via 20 nm-scale InAs quantum dot and magnetotunneling spectroscopy of its electronic states"Appl.Phys.Lett.. 70 (1). 105-107 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Kadoya, T.Someya, H.Noge and H.Sakaki: "Effect of oxygen incorporation at AlGaAs/GaAs interfaces on the Electrical properties of two-dimentional electron gas"Appl.Phys.Lett. 70 (5). 595-597 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Koshiba, I.Tanaka, Y.Nakamura, H.Noge and H.Sakaki: "Ultrahigh vacuum atomic force microscope study of 10-30 nm-scale GaAs ridge structure formation by molecular beam epitaxy"Appl.Phys.Lett.. 70 (7). 883-885 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Rufenacht, S.Tsujino, Y.Ohno, and H.Sakaki: "Delayed luminescence induced by intersubband optical excitation in a charge transfer double quantum well structure"Appl.Phys.Lett.. 70 (9). 1128-1130 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] G.Yusa and H.Sakaki: "Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures"Appl.Phys.Letts.. 70. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Nakamura, S.Koshiba, H.Sakaki: "Formation of multi-atomic steps and novel n-AlGaAs/GaAs hetero junctions on vicina (111) B substrates by MBE and anisotropic transport of 2D electrons"J.Cryst.Growth. 175-176. 1091-1095 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] G.Yusa and H.Sakaki: "MBE growth of novel GaAs/n-AlGaAs field-effect ransistor structures with embedded InAs quantum traps and their transport characteristics"J.Cryst.Growth. 175-176. 729-734 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Koshiba, I.Tanaka, Y.Nakamura, I.Kamiya, T.Someya, T.Ngo and H.Sakaki: "UHV-AFM Study of MBE grown 10-nm scale ridge quantum wires"J.Crystal Growth. 175-176. 803-807 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Noda, Y.Nagumune, Y.Ohno, S.Koshiba, and H.Sakaki: "Selective MBE growth of GaAs wire and dot structures using atomic hydrogen and their electronic properties"J.Cryst.Growth. 175-176. 786-791 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Inoshita, H.Sakai: "Electron-phonon interaction and the so-called phonon bottleneck in a semiconductor quantum dots"Physica B. 227. 373-377 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Inoshita, H.Sakaki: "Density of states and phonon-induced relaxation ofelectrons in semiconductor quantum dots"Phys.Rev., Vol. B. 56. 4355-4358 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Kuwata-Gonokami, S.Inouye, H.Suzuura, M.Shirane, R.Shimono, T.Someya and H.Sakaki: "Parametric scattering of cavity polaritons"Phys.Rev. Lett.. vol.79, No.7. 1341-1344 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Kono, M.Y.Su, T.Inoshita, T.Noda, M.S.Sherwin, S.J.Allen, Jr., and H.Sakaki: "Resonant terahertz optical sideband generation from confined magnetoexcitons"Phys.Rev.Lett.. vol.79, No.9. 1758-1761

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Akiyama, T.Someya, and H.Sakaki: "Spectroscopy of one-dimensional excitons in GaAs quantum wires"Materials Science Engineering. B48. 126-130 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Tsujino, C.Metzner, T.Noda, and H.Sakaki: "Saturation of intersubband absorption by real-space transfer in modulation doped single GaAs-AlAs quantum well"phys.stat.sol. (b). 204, No.1. 162 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Rufenacht, and H.Sakaki: "Oscillatory behavior of relaxation of hot electrons in a biased charge transfer double quantum well"phys.stat.sol. (b). 204, No.1. 151 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.B.Nordstrom, K.Johnsen, S.J.Allen, Jr., A.-P.Jauho, B.Birnir, J.Kono, T.Noda, H.Akiyama, and H.Sakaki: "Observation of dynamical Franz-Keldysh effect"phys.stat.sol. (b). 204, No.1. 52 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Sakaki, T.Someya, H.Akiyama, Y.Nakamura, K.Kondo, and D.Kishimoto: "Formation of 10 nm scale edge quantum wire structures and their excitonic and electronic properties"phys.stat.sol. (a). 164, No.1. 241-251 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.Metzner, G.G.Dohler, and H.Sakaki: "Localization of quantum well excitons by lateral disorder. a numerical study"phys.stat.sol. (a). 164, No.1. 471-476 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Kono, M.Y.Su, K.B.Nordstrom, J.Cerne, M.S.Sherwin, S.J.Allen, Jr., T.Inoshita, T.Noda, H.Sakaki, G.E.W.Bauer, M.Sundaram, and A.C.Gossard: "Terahertz linear and nonlinear dynamics in confined magnetoexcitons"phys.stat.sol. (a). 164, No. 1. 567-570 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] R.Sasagawa, H.Sugawara, Y.Ohno, H.Nakajima, and S.Tsujino: "Enhancement of intersubband transition energies in GaAs quantum wells by Si delta doping of high concentration"Appl.Phys.Lett.. vol.72, No.6. 719-721 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Akiyama, T.Someya, M.Yoshita, and H.Sakaki: "Photoluminescence study of lateral confinement energy in T shaped InGaAs quantum wires"Phys.Rev.B. 57. 3765 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Yoshita, H.Akiyama, T.Someya, H.Sakaki: "Microphotoluminescence characterization of cleaved edge overgrowth T-shaped InxGa1-xAs quantum wires"J.appl.Phys.. Vol.83 (7). 3777-3783 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] I.Kamiya, I.Tanaka, H.Sakaki: "Optical properties of near surface-InAs quantum dots and their formation processes"Physica E.. Vol.2. 637-642 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] G.Yusa, H.Sakaki: "Trapping of a single photogenerated hole by an InAs quantum dot in GaAs/n-AlGaAs quantum trap FET and its spectral response in the near infrared regime"Physica E.. Vol.2. 734-737 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Qureshi, J.S.Scott, S.J.Allen Jr., M.Reddy, M.J.W.Rodwell, Y.Nakamura, I.Tanaka, T.Noda, I.Kamiya, H.Sakaki: "Terahertz excitation of AFM-defined room temperature quantum dots"Physica E.. Vol.2. 701-703 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Nakamura, T.Inoshita, H.Sakaki: "Novel magneto-resistance oscillations in laterally modulated two dimensional electrons with 20nm periodicity formed on vicinal GaAs (111) B substrates"Physica E.. Vol.2. 944-948 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Nagmune, M.Wantanabe, M.Seyama, K.Kinoshita, Y.Inagaki, A.Takahashi, T.Noda, H.Sakaki: "Time resolved carrier drag effect in quantum wells and wires"Physica E.. Vol.2. 843-849 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Kim, T.Noda, and H.Sakaki: "Formation of GaAs/AlGaAs constricted-channel field-effect transisto structures by focused Ga implantation and transport of electrons via focused ion beam induced localized states"J.Vac.Sci.Technol. B. 16 (4). 7-8 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Watanabe, S.Koshiba, M.Yoshita, H.Sakaki, M.Baba, and H.Akiyama: "Stimulated emission in ridge quantum wire laser structures measured with optical pumping and microscopic imaging methods"Appl.Phys.Lett.. Vol.73 (4). 511-513 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Kono, M.Y.Su, J.Cerne, M.S.Sherwin, S.J.Allen Jr., T.Inoshita, T.Noda, H.Sakaki: "Terahertz dynamics in confined magnetoexcitons"Jpn.J.Appl.Phys.. 39. 4651-4652 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Inoshita and H.Sakaki: "Mixing of terahertz and near-infrared radiation in quantum wells in strong magnetic fields"Physica B. Vol.249-251. 534-537 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Tsujino, H.Nakajima, T.Inoshita, T.Noda, H.Sakaki: "Negative vertical photovoltaic response of two dimensional electrons in the quantum Hall regime"Physica B. Vol.249-251. 571-574 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Rufenacht, S.Tsujino, H.Sakaki: "Transient negative photoconductance in a charge transfer double quantum well under optical intersubband excitation"Physica B. Vol.249-251. 723-726 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Yamauchi, Y.Nakamura, H.Sakaki: "Edge quantum wire structures with novel doping profiles and their electronic states"Solid-State Electronics. Vol.42 (7-8). 1223-1226 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.B.Nordstrom, K.Johnsen, S.J.Allen, A.-P.Jauho, B.Birnir, J.Kono, T.Noda, H.Akiyama, H.Sakaki: "Excitonic dynamical Franz-Keldysh effect"Phys.Rev.Lett.. Vol.81 (2). 457-460 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Nakamura, H.Sakaki: "Anisotropic magneto-resistance of laterally modulated GaAs/AlGaAs system with a 15 20nm periodicity formed on vicinal (111) B substrates"Phisica B. 256-258. 273-278 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Shirane and C.Ramkumar, Yu.P.Svirko, H.Suzuura, S.Inouye, R.Shimano, T.Someya, H.Sakaki, M.Kuwata-Gonokami: "Degenerate four-wave mixing measurements on an exciton-photon coupled system in a semiconductor microcavity"Phys.Rev.B.. Vol.58 (12). 7978-7985 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Nakanmura, I.Tanaka, N.Takeuchi, S.Koshiba, H.Sakaki: "Formation of uniform GaAs multi-atomic steps with 20-30nm periodicity and related structures on vicinal (111) B planes by MBE"J.Electronic Materials. Vol.27 (11). 1240-1243 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Yoshita, M.Baba, S.Koshiba, H.Sakaki, And H.Akiyama: "Solid immersion photoluminescence microscopy on carrier diffusion in facet-growth GaAs quantum wells"Appl.Phys.Lett.. Vol.73 (20). 2965-2967 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Sakaki, Y.Nakamura, M.Yamauchi, T.Someya, H.Akiyama, D.Kishimoto: "10nm-scale edge- and step quantum wires and related structures : Progress in their design, epitaxial synthesis and physics"Physica E. 4. 56-64 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] G.Yusa and H.Sakaki: "InAs quantum dot field effect transistors"Superlattices and Microstructures. Vol.25, No.1/2. (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] I.Tanaka, I.Kamiya, H.Sakaki, N.Qureshi, S.J.Allen, Jr., P.M.Petroff: "Imaging and probing electronic properties of self-assembled InAs quantum dots by atomic force microscopy with conductive tip"Appl.Phys.Lett.. vol.74, No.6. 844-846 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Yamauchi, T.Inoshita, H.Sakaki: "Electronic structure of nanometer-scale quantum dots created by a conductive atomic force microscope tip in resonant tunneling structures"Appl.Phys.Lett.. vol.74, No.11. 1582-1584 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Yoshita, T.Sasaki, M.Baba, S.Koshiba, H.Sakaki, and H.Akiyama: "Carrier transfer in facet-growth GaAs quantum wells studied by solid immersion photoluminescence microscopy"Inst.of Phys.Conf.Ser.162 "Compound Semiconductors". 143-148 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Ph.Lelong, and H.Sakaki: "Capacitor feedback in double quantum dot plane"Inst.of Phys.Conf.Ser.162 "compound Semiconductors". 463-468 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.Metzner, G.Yusa, and H.Sakaki: "Modelling inter-dot Coulomb interaction effects in field effect transistros with an embedded quantum dot layer"Superlattices and Microstructures. 25, 3. 537-549 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Koshiba, S.Watanabe, Y.Nakamura, I.Tanaka, T.Noda, T.Ngo, M.Yoshita, M.Baba, H.Akiyama, and H.Sakaki: "Fabrication and control of GaAs/AlAs 10 nano-meter scale structure by MBE"Trans.of Materials Research Soc. of Japan. 24 [1]. 93-96 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Koshiba, S.Watanabe, Y.Nakamura, M.Yamauchi, M.Yoshita, M.Baba, H.Akiyam, and H.Sakaki: "Selective molecular beam epitaxy (MBE) growth of GaAs/AlAs ridge stuctures containing 10nm scale wires and side quantum wells (QWs) and their stimulated emission characteristics"J.Cryst.Growth. 201/202. 810-813 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] I.Tanaka, I.Kamiya, and H.Sakaki: "Local surface band modulation with MBE-grown InAs quantum dots measured by atomic force micorscopy with conductive tip"J.Cryst.Growth.. 201/202. 1194-1197 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] I.Kamiya, I.Tanaka, and H.Sakaki: "Control of size and density of self-assembled InAs dots on (001) GaAs and the dot size dependent capping process"J.Cryst.Growth. 201/202. 1146-1149 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Matsusue, H.Akiyama, T.Saiki, C.Ramkumar, M.Shirane, R.Shimano, M.Kuwata-Gonokami and H.Sakaki: "Coherent dynamics of excitons in an Island-Inserted GaAs/AlAs quantum well structure : Suppression of phase relaxation and a deep quantum beat"Jpn.J.Appl.Phys.. 38. 2735-2740 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Fukumura, H.Sugawara, T.Hasegawa, K.Tanaka, H.Sakaki, T.Kimura, and Y.Tokura: "Spontaneous bubble domain formation in a layered ferromagnetic crystal"Science. 284, 5422. 1881-2044 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Sakaki: "Control of electronic states in epitaxially synthesized quantum dot and wire structures and their potentials as new electronics and photonics materials"Phys.Stat.Sol. (b). 215. 291-296 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Watanabe, S.Koshiba, M.Yoshita, H.Sakaki, M.Baba, and H.Akiyama: "Microscopy of electronic states contributing to lasing in ridge quantum-wire laser structure"Appl.Phys.Lett.. 75, 15. 2190-2192 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Fukumura, H.Sugawa, K.Kitazawa, T.Hasegawa, Y.Nagamune, T.Noda, H.Sakaki: "Development of a scanning Hall probe microscope for simultaneous magnetic and topographic imaging"Micron. 30. 575-578 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Tanaka, Y.Nakamura, H.Sakaki: "Anomalous conductance quantization in a novel quantum point contact with periodic (16nm) potential modulation"Physica. E. 6. 558-560 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] D.Kishimoto, T.Noda, Y.Nakamura, H.Sakaki, T.Nishinaga: "Effect of substrate rotation on inter-surface diffusion in MBE for mesa-structure fabrication"J.of Crystal Growth. 209. 591-598 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Ph.Lelong, S.-W.Lee, K.Hirakawa, H.Sakaki: "Fano profile in Intersubband transitions in InAs quantum dots"Physica E. 7. 174-178 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] D.Kishimoto, T.Nishinaga, S.Naritsuka, T.Noda, Y.Nakamura, H.Sakaki: "(111) B growth elimination in GaAs MBE of (001)-(111) B mesa structure by suppressing 2D-nucleation"Journal of Crystal Growth. 212. 373-378 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Kim, H.Sakaki: "Quantum storage effects in n-AlGaAs/GaAs heterojunction FETs with embedded InAs QDs and Iocalized states iniduced by Ga-FIB implantation"Physica E. 7. 435-439 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Matsuhashi, A.Gotoh, C.-H.Lee, M.Yokoyama, K.Masu and K.Tsubouchi: "Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization Metal-Oxide-Semiconductor Field-Effect-Transistor"Jpn.J.Appl.Phys.. 37. 3264-3267 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Shimano, K.Masu and K.Tsubouchi: "Reliability of Single Electron Transistor circuits Based on Eb/No-BER Characteristics"Jpn.J.Appl.Phys.. 38 (1B). 403-405 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.H.Lee, T.Nishimura, H.Matsuhashi, M.Yokoyama, K.Masu and K.Tsubouchi: "Crystallographic Structure and Parasitic Resistances of Self-Aligned Siliside TiSi2 /Self- Aligned Nitrided Barrier-Layer/ Selective Chemical Vapor Deposited Aluminum in fully Self- Aligned Metallization Metal-Oxide-Semiconductor Field-Effect-Transistor"Jpn.J.Appl.Phys.. 38. 5835-5838 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Sasa, T.Sugihara, K.Tada, S.Izumiya, Y.Yamamoto, and M.Inoue: "High Field Transport Properties of InAs/AlGaSb quantum Wires"Physica B. 227. 363 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Sasa, T.Sugihara, K.Tada, S.Izumiya, Y.Yamamoto, and M.Inoue: "High Field Transport Properties of InAs/AlGaSb Quantum Wires"Procs. of New Phenomena in Mesoscopic Structures NPMS'95. 363 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Inoue, T.Sugihara, T.Maemoto, S.Sasa, H.Dobashi, and S.Izumiya: "Low-dimensional electron transport properties in InAs/AlGaSb mesoscopic structures"Superlattices and Microstructures. 21. 1 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Kono, X.G.Peralta, J.Cerne, S.J.Allen, Jr., Y.Nakamura, H.Akiyama, H.Sakaki, t.Sugihara, S.Sasa, and M.Inoue: "Terahertz Photoresponse of Quantum Wires in Magnetic Fields"Superlattices and Microstructures. 20. 383 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Osako, t.Sugihara, Y.Yamamoto, T.Maemoto, S.Sasa, M.Inoue, and C.Hamaguchi: "Quantum anti-dot arrays and quantum wire transistors fabricated on InAs/A10.5Ga0.5Sb heterostructures"Semicond. Sci.& Technol.. 11. 571 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Sasa, T.Ikeda, C.Dohno and M.Inoue: "Atomic Force Microscope Nano-fabrication of InAs/AlGaSb Heterostructures"Jpn.J.Appl.Phys.. 36. 4067 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Sasa, T.Ikeda, C.Dohno and M.Inoue: "Superconductor-semiconductor juncitons with InAs/Al(Ga)Sb quantum wells"Appl.Surf.Sci.. 117/118. 714 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Maemoto, H.Yamamoto, M.Konami, A.Kajiuchi, T.Ikeda, S.Sasa, and M.Inoue: "High Speed Quasi-One Dimensional Electron Transport in InAs/AlGaSb Mesoscopic Devices"Phys.Stat.Sol.. 204. 255 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Sasa, T.Ikeda, A.Kajiuchi, and M.Inoue: "AFM fabrication and characterization of InAs/AlGaSb nanostructures"Solid-State Electroics. 42. 1069 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Sasa, T.Ikeda, C.Dohno, and M.Inoue: "InAs/AlGaSb nanoscale device fabrication using AFM oxidation process"Physica E. 2. 858 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Osako, T.Hamano, N.Mori, C.Hamaguchi, S.Sasa, and M.Inoue: "Magnetophonon and Magneto intersubband-scattering effects in InAs/AlGaSb heterostructures"Physica B. 249-251. 740 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Sasa, T.Ikeda, A.Kajiuchi, and M.Inoue: "Coulomb blockade observed in InAs/AlGaSb nanostructures produced by an atomic force microscope oxidation process"Jpn.J.Appl.Phys.. 38. 480 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Sasa, T.Ikeda, M.Akahori, A.Kajiuchi, and M.Inoue: "Novel nanofabrication process for InAs/AlGaSb heterostructures utilizing AFM oxidation"Jpn.J.Appl.Phys. 38. 1064 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Sasa, K.Anjiki, T.Yamaguchi, and M.Inoue: "Electron transport in a large spin-splitting 2DEG in InAs/AlGaSb heterostructures"Physica B. 272. 149 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kenji Taniguchi and Masaharu Kirihara: "Future Prospects of Single-Electron-Tunneling (SET)-Based Digital Cirsuits"FED Journal. Vol.7, Suppl.2. 32-37 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Masaharu Kirihara and Kenji Taniguchi: "A Single Electron Neuron Device"Jpn.J.Appl.Phys.. Vol.36, No.6B. 4172-4175 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Masaharu Kirihara and Kenji Taniguchi: "Asymmetric Single Electron Turnstile and Its Electronic Circuit Applications"IEICE.Trans.Electron.. Vol.E81-C, No.1. 57-62 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Shuichi Miyakawa, Ryangsu Kim, Jun-ichi Shirakashi, Kenji Taniguchi, Kazuhiko Matsumoto, and Yoshinari Kamakura: "Single Electron Transistors Fabricated with AFM Ultrafine Nanooxidation Process"ELECTRONICS and COMMUNICATIONS in JAPAN, PART II : Electronics. Vol.81, No.10. 12-18 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Fukui, M.Fujishima and K.Hoh: "Single-Electron Transistor in Silicon-on-Insulator with Schottky-Contact Tunnel Barries"Jpn.J.Appl.Phys.. 36. 4147 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Amakawa, M.Fujishima and K.Hoh: "Correlated Electron-Hole Transport in Capacitively-Coupled One Dimensional Tunnel Junction Arrays"Jpn.J.Appl.Phys.. 36. 4166 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Fujishima, H.Fukui, S.Amakawa and K.Hoh: "Proposal of a Schottky-Barrier SET Aiming at a Future Integrated Device"IEICE Trans. Electron.. E80-C. 881 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Amakawa, K.Kanda, M.Fujishima and K.Hoh: "A Simple Model of a Single-Electron Floating Dot Memory for Circuit Simulation"Jpn.J.Appl.Phys.. 38. 429 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Amakawa, K.Hoh, M.Fujishima, H.Mizuta and K.Tsukagoshi: "Scaling of the Single-Electron Tunneling Current through Ultrasmall Tunnel Junctions"J.Phys.C : Condensed Matter. 12. 7223 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.O'uchi, T.Tsubokura, T.Tajima, S.Amakawa, M.Fujishima and K.Hoh: "Charging and Retention Times in Silicon-Floating-Dot-Single-Electron Memory"Jpn.J.App.Phys.. 40 (in press). (2001)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2002-03-26  

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