1996 Fiscal Year Annual Research Report

IV族半導体極微細構造形成プロセスに関する研究

Research Project

Project/Area Number	08247202
Research Institution	Tohoku University
Principal Investigator	室田淳一東北大学, 電気通信研究所, 教授 (70182144)
Co-Investigator(Kenkyū-buntansha)	櫻場政夫東北大学, 電気通信研究所, 助手 (30271993) 松浦孝東北大学, 電気通信研究所, 助教授 (60181690)
Keywords	IV族半導体 / 極微細デバイス / 原子層成長 / 原子層エッチング / 一原子層熱窒化 / ラングミュア吸着 / 表面水素終端 / W低温選択的成長
Research Abstract	本研究では、原子層成長・エッチング法等ラングミュア吸着・反応の制御プロセス技術を駆使して、IV族半導体極微細構造を形成する原子制御プロセス技術を開拓することを目的としている。本年度は、表面吸着・反応制御の研究として原子層成長、表面処理、並びに原子層エッチング、デバイス製作プロセスの研究として低温ヘテロエピタキシャル成長とその極微細デバイスへの応用の研究を中心に行った。原子層成長や表面処理の研究では、反応温度を低温化し反応雰囲気を高清浄化して不要不純物の吸着を抑え、Si及びGe表面の水素終端をpreheat法により制御して、SiH_4、GeH_4等の単分子吸着層の形成を図った。フラッシュ光照射による瞬時加熱を併用し、SiとGeの一原子層ずつの成長を可能にし、SiH_4やGeH_4の吸着量がLangmuir型吸着・脱離平衡で表され表面吸着点密度が表面原子密度に等しい条件があることを明らかにした。また、NH_3による300〜500℃での一原子層熱窒化を実現し、CH_4による600℃でのSi表面一原子層炭化の可能性を示した。原子層エッチングの研究では、塩素の吸着と低エネルギーAr^+イオン照射を交互に行うことにより、SiやGeの自己制限型分数原子層エッチングが可能であり、超微細パターン加工もできることを実証し、飽和エッチ量や塩素の吸着速度のSi基板面方位及び反応性吸着種依存性を明らかにした。極微細デバイス製作プロセスの研究では、不純物ドープSiGe混晶の選択エピタキシャル成長層をソース・ドレイン層とする新しいMOSFET製作プロセスを提案し、ゲート電極寸法と実効チャネル長がほぼ等しい75nmルールのMOSFETを実現した。また、水素終端の制御により〜100℃という低温でSi上へのWの選択成長を実現し、電極構成への適用の研究を進めている。

Research Products

(11 results)

All Other

All Publications (11 results)

[Publications] T. Sugiyama,: ""Atomic-Layer Etching of Ge Using an Ultraclean ECR Plasma"," Appl. Surf. Sci.(in press). (1997)
[Publications] S. Kobayashi,: ""Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas"," J. Crystal Growth.Vol. 174, No-1-4 (in press). (1997)
[Publications] T. Watanabe: ""Atomic-Order Layer Growth of Silicon Nitride Films at Low Temperatures"," the 13th International Conference on Chemical Vapor Deposition. Vol. PV96-5. 504-509 (1996)
[Publications] Y. Yamamoto,: ""Selective Growth of W at Very Low Temperatures Using a WF_6-SiH_4 Gas System"," the 13th International Conference on Chemical Vapor Deposition. Vol. PV96-5. 814-820 (1996)
[Publications] T. Sugiyama,: ""Atomic-Layer Etching of Ge Using an Ultraclean ECR Plasma"," 4th International Symposium on Atomic Layer Epitaxy and Related Surface Processes. Mo1510. (1996)
[Publications] S. Kobayashi,: ""Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas"," The 9th International Conference on Vapor Growth & Epitaxy. 116 (1996)
[Publications] J. Murota,: ""Atomic-Layer Surface Reaction of SiH_4 on Ge (100) and GeH_4 on Si (100)"," 1996 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS'96),. 24 (1996)
[Publications] J. Murota,: ""Atomic-Layer Surface Reaction of Silane on the Germanium (100) Surface"," Proceeding of the Second Topical Meeting on Structural Dynamics of Epitaxy and Quantum Mechanical Approach,. 97-101 (1997)
[Publications] M. Ishii,: ""0.1μm MOSFET with Super Self-Aligned Shallow Junction Electrodes"," ULSI Science and Technology '97,. (in press). (1997)
[Publications] T. Watanabe: ""Atomic-Order Nitridation of the H-Terminated and H-Free Si Surfaces by NH_3"," The 14th International Conference on Chemical Vapor Deposition,. (in press). (1997)
[Publications] M. Sakuraba,: ""H-Termination on Ge (100) and Si (100) by Diluted HF Dipping and by Annealing in H_2"" 5th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing,. (in press). (1997)

1996 Fiscal Year Annual Research Report

IV族半導体極微細構造形成プロセスに関する研究

Principal Investigator

室田 淳一 東北大学, 電気通信研究所, 教授 (70182144)

Research Products

[Publications] T. Sugiyama,: ""Atomic-Layer Etching of Ge Using an Ultraclean ECR Plasma"," Appl. Surf. Sci.(in press). (1997)

[Publications] S. Kobayashi,: ""Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas"," J. Crystal Growth.Vol. 174, No-1-4 (in press). (1997)

[Publications] T. Watanabe: ""Atomic-Order Layer Growth of Silicon Nitride Films at Low Temperatures"," the 13th International Conference on Chemical Vapor Deposition. Vol. PV96-5. 504-509 (1996)

[Publications] Y. Yamamoto,: ""Selective Growth of W at Very Low Temperatures Using a WF_6-SiH_4 Gas System"," the 13th International Conference on Chemical Vapor Deposition. Vol. PV96-5. 814-820 (1996)

[Publications] T. Sugiyama,: ""Atomic-Layer Etching of Ge Using an Ultraclean ECR Plasma"," 4th International Symposium on Atomic Layer Epitaxy and Related Surface Processes. Mo1510. (1996)

[Publications] S. Kobayashi,: ""Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas"," The 9th International Conference on Vapor Growth & Epitaxy. 116 (1996)

[Publications] J. Murota,: ""Atomic-Layer Surface Reaction of SiH_4 on Ge (100) and GeH_4 on Si (100)"," 1996 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS'96),. 24 (1996)

[Publications] J. Murota,: ""Atomic-Layer Surface Reaction of Silane on the Germanium (100) Surface"," Proceeding of the Second Topical Meeting on Structural Dynamics of Epitaxy and Quantum Mechanical Approach,. 97-101 (1997)

[Publications] M. Ishii,: ""0.1μm MOSFET with Super Self-Aligned Shallow Junction Electrodes"," ULSI Science and Technology '97,. (in press). (1997)

[Publications] T. Watanabe: ""Atomic-Order Nitridation of the H-Terminated and H-Free Si Surfaces by NH_3"," The 14th International Conference on Chemical Vapor Deposition,. (in press). (1997)

[Publications] M. Sakuraba,: ""H-Termination on Ge (100) and Si (100) by Diluted HF Dipping and by Annealing in H_2"" 5th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing,. (in press). (1997)

室田淳一東北大学, 電気通信研究所, 教授 (70182144)