1996 Fiscal Year Annual Research Report

ラジカル制御を用いた表面反応過程及び薄膜形成に関する研究

Research Project

Project/Area Number	08405005
Research Category	Grant-in-Aid for Scientific Research (A)
Research Institution	Nagoya University
Principal Investigator	後藤俊夫名古屋大学, 工学部, 教授 (50023255)
Co-Investigator(Kenkyū-buntansha)	伊藤昌文名古屋大学, 工学部, 助手 (10232472) 堀勝名古屋大学, 工学部, 助教授 (80242824) 河野明廣名古屋大学, 工学部, 助教授 (40093025)
Keywords	プラズマ / CVD / ラジカル / 多結晶シリコン / アモルファスシリコン / 赤外半導体レーザー吸収分光法 / FT-IRRAS
Research Abstract	赤外半導体レーザー吸収分光装置および質量分析装置による気相反応計測システム(現有設備),μ秒からミリ秒のオーダーのパルス変調を用いたECRプラズマ励起活性種制御システム(現有設備),高感度反射型FT-IR装置による表面反応計測システム(現有設備)を新規購入の超高真空ラジカル制御反応装置に組み込み、ラジカル制御薄膜堆積システムを構築した. まず,SiH_4/H_2(水素で高希釈されたシラン)ECRプラズマによる多結晶シリコン膜の300℃以下の低温形成における荷電粒子(イオン・電子),ラジカルの役割を明らかにすめために,荷電粒子と中性ラジカルを分離制御し堆積する実験を行った。これにより,ECRプラズマによる多結晶シリコン膜低温形成においては荷電粒子がなくても低温で結晶性のよい膜が得られることがはじめて明らかとなった, また,高速度反射型FT-IR装置を用いて水素ラジカル(原子状水素)のアモルファスシリコン表面での反応過程をその場観察した.これにより,基板温度が室温では原子状水素は表面極近傍(約10Å)程度の弱い結合のみを1秒以下の高速な反応で切断し,それ以上内部の結合とは反応しにくいことが明らかとなった.基板温度200℃にすると,原子状水素の反応性が上昇し,バルク内の結合の弱い高次水素結合を切断し,低次の結合に変化することが分かった. さらに,ECRプラズマの気相中の活性種とアモルファスシリコン膜堆積との相関をとるため,気相中の中性ラジカルとイオンの密度と膜堆積速度を測定した.結果から,Si原子と膜堆積速度に非常に強い相関があることがはじめて明らかとなった.

Research Products

(11 results)

All Other

All Publications (11 results)

[Publications] Y.Yamamoto et.al..: "Effects of dilution gases on Si atom and SiHx^+(x=0-3)ions in electron cyclotron resonance SiH_4 plasma" Jpn.J.Appl.Phys.36(in printing). (1997)
[Publications] R.Nozawa et.al.: "Substrate DC bias effects on low temperature polycrystalline silicon formation in electron cyclotron resonance SiH_4/H_2 plasma-enhanced chemical vapor deposition" J.Appl.Phys.75(in printing). (1997)
[Publications] R.Nozawa et.al.: "Effects of ions on surface morphology and structures of polycrystalline silicon films prepared by electron cyclotron resonance silane/hydrogen plasmas" Plasma processing XI(Proc.of the 11th inter.sympo.in plasma processing). 11. 662-667 (1996)
[Publications] R.Nozawa et.al.: "Low temperature polycrystalline silicon formation by nutral reactive species in electron cvclotron resonance SiH_4/H_2 plasma chemical vapor deposition" Proc.of 3rd int.conf.reactive plasmas. 132-133 (1996)
[Publications] Y.Yamamoto et.al.: "Effect of dilution gases on Si atom and SiHx^+(x=0-3)in ECR SiH_4 plasma" Proc.of 3rd int.conf.reactive plasmas. 449-450 (1996)
[Publications] R.Nozawa et.al.: "Ion bombardment effects on polycrystalline silicon formation in electron cyclotron resonance SiH_4/H_2 plasma enganced chemical vapor deposition" Proc.of 3rd Asia-pacific conf.plasma sic.& technol.,. 529-534 (1996)
[Publications] M.Ito et.al.: "The roles of plasma species on polycrystalline silicon film formation by ECR SiH_4/H_2 plasma" Bulletin of the American Physical Society(Proc.of 49th GEC). 41(6). 1309 (1996)
[Publications] Y.Yamamoto et.al.: "Behaviors of Si atom and SiHx^+(x=0-3)ions in ECR SiH_4 plasma" Bulletin of the American Physical Society(Proc.of 49th GEC). 41(6). 1308 (1996)
[Publications] M.Hori et.al.: "In-situ surface diagnostics of a-Si : H films during ECR-H_2 plasma annealing" Bulletin of the American Physical Society(Proc.of 49th GEC). 41(6). 1311 (1996)
[Publications] M.Hori et.al.: "The effects of radicals on the crystallinity of polycrystalline silicon films formed by using ECR SiH_4/H_2 plasma" Proc.of 43rd national symposium of American vacuum society. 102 (1996)
[Publications] M.Ito et.al.: "Effects of ions on surface morphology and structures of polycrystalline silicon films prepared by electron cyclotron resonance silane/hydrogen plasma" 189th Electrochemical society meeting abstract. 96-1. 324 (1996)

1996 Fiscal Year Annual Research Report

ラジカル制御を用いた表面反応過程及び薄膜形成に関する研究

Principal Investigator

後藤 俊夫 名古屋大学, 工学部, 教授 (50023255)

Research Products

[Publications] Y.Yamamoto et.al..: "Effects of dilution gases on Si atom and SiHx^+(x=0-3)ions in electron cyclotron resonance SiH_4 plasma" Jpn.J.Appl.Phys.36(in printing). (1997)

[Publications] R.Nozawa et.al.: "Substrate DC bias effects on low temperature polycrystalline silicon formation in electron cyclotron resonance SiH_4/H_2 plasma-enhanced chemical vapor deposition" J.Appl.Phys.75(in printing). (1997)

[Publications] R.Nozawa et.al.: "Effects of ions on surface morphology and structures of polycrystalline silicon films prepared by electron cyclotron resonance silane/hydrogen plasmas" Plasma processing XI(Proc.of the 11th inter.sympo.in plasma processing). 11. 662-667 (1996)

[Publications] R.Nozawa et.al.: "Low temperature polycrystalline silicon formation by nutral reactive species in electron cvclotron resonance SiH_4/H_2 plasma chemical vapor deposition" Proc.of 3rd int.conf.reactive plasmas. 132-133 (1996)

[Publications] Y.Yamamoto et.al.: "Effect of dilution gases on Si atom and SiHx^+(x=0-3)in ECR SiH_4 plasma" Proc.of 3rd int.conf.reactive plasmas. 449-450 (1996)

[Publications] R.Nozawa et.al.: "Ion bombardment effects on polycrystalline silicon formation in electron cyclotron resonance SiH_4/H_2 plasma enganced chemical vapor deposition" Proc.of 3rd Asia-pacific conf.plasma sic.& technol.,. 529-534 (1996)

[Publications] M.Ito et.al.: "The roles of plasma species on polycrystalline silicon film formation by ECR SiH_4/H_2 plasma" Bulletin of the American Physical Society(Proc.of 49th GEC). 41(6). 1309 (1996)

[Publications] Y.Yamamoto et.al.: "Behaviors of Si atom and SiHx^+(x=0-3)ions in ECR SiH_4 plasma" Bulletin of the American Physical Society(Proc.of 49th GEC). 41(6). 1308 (1996)

[Publications] M.Hori et.al.: "In-situ surface diagnostics of a-Si : H films during ECR-H_2 plasma annealing" Bulletin of the American Physical Society(Proc.of 49th GEC). 41(6). 1311 (1996)

[Publications] M.Hori et.al.: "The effects of radicals on the crystallinity of polycrystalline silicon films formed by using ECR SiH_4/H_2 plasma" Proc.of 43rd national symposium of American vacuum society. 102 (1996)

[Publications] M.Ito et.al.: "Effects of ions on surface morphology and structures of polycrystalline silicon films prepared by electron cyclotron resonance silane/hydrogen plasma" 189th Electrochemical society meeting abstract. 96-1. 324 (1996)

後藤俊夫名古屋大学, 工学部, 教授 (50023255)