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1998 Fiscal Year Final Research Report Summary

Studies on surface reaction process and thin film formation by controlling radicals

Research Project

Project/Area Number 08405005
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field 表面界面物性
Research InstitutionNagoya University

Principal Investigator

GOTO Toshio  Graduate School of Eng., Nagoya Univ., Professor, 工学研究科, 教授 (50023255)

Co-Investigator(Kenkyū-buntansha) ITO Masafumi  Graduate School of Eng., Nagoya Univ., Assistant Professor, 工学研究科, 講師 (10232472)
HORI Masaru  School of Eng., Nagoya Univ., Associate Professor, 工学部, 助教授 (80242824)
KONO Akihiro  Center for Coop.Res.in Adv.Sci.& Tech., Nagoya Univ., Professor, 先端技術共同研究センター, 教授 (40093025)
Project Period (FY) 1996 – 1998
KeywordsPlasma / Chemical vapor deposition / Radical / Poly crystalline Silicon / Amorphous Silicon / Absorption spectroscopy / Process / Diamond
Research Abstract

In this project, firstly we investigated systematically the correlation between the crystallinity of the deposited films and the information of gas phase in ECR plasma using silane / hydrogen mixture gases. As a result, we found that the reduction of ion flux contributed to the improvement of the crystallinity. On the basis of this result, we developed a novel method for depositing films without ionic species, namely, only neutral species using permanent magnets. Using this method, we have successfully synthesized the polycrystalline films with high crystallinty and smooth surfase. However, the deposition rate was reduced to be a tenth of that using the conventional method. To solve this problem, we have tried a novel two step growth method. In the method, ionic species were removed at the initial growth stage by using permanent magnets. After this step, the permanent magnets were removed from the plasma, the films were deposited by using the conventional ECR silane/hydrogen plasma., n … More amely including ionic and neutral species. As a result, we have successfully synthesized the films with high crystallinity, smooth surface and relatively high deposition rate. Moreover, we have found that ionic species disturb the nucleation of the crystalline phase especially.
In a diamond formation process, we have clarified the role of radicals from the correlation between the film quality and the behaviors of the radicals using vacuum ultraviolet absorption spectroscopy and optical emission spectroscopy. As a result, carbon atom contributes to the formation of non-diamond phase while OH radical promotes the abstraction reaction of hydrogen atom terminating the diamond surface.
In this project from 1996 to 1998, we have successfully obtained important findings by elucidating the roles in the polycrystalline silicon and diamond film formation processes. Moreover, on the basis of the findings, we have successfully developed the methods promising to obtain the films with further better quality by controlling the radicals. Less

  • Research Products

    (14 results)

All Other

All Publications (14 results)

  • [Publications] R.Nozawa et.al: "Effects of ions on surface morphology and structures of polycrystalline silicon films prepared by electron cyclotron resonance silane/hydrogen plasmas" PLASMA PROCESSING XI. 11. 662-667 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Ito et.al: "Scanning tunneling microscopic and spectro-scopic characterization of diamond film prepared by capacitvely coupled radio frequency CH3OH plasma with OH radical injection" Appl. Phys. Lett.70・16. 2141-2143 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] R.Nozawa et.al: "Substrate DC bias effects on low temperature polycrystalline silicon formation in electron cyclotron resonance plasma-enhanced chemical vapor deposition" J. Appl. Phys.79・6. 8035-8039 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Yamamoto et.al: "Effects of dilution gases on Si atom and SiHx^+(x=0-3)ions in electron cyclotron resonance SiH4 plasma" Jpn. J. Appl. Phys.36・7B. 4664-4669 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] R.Nozawa et.al: "IN-situ observation of hydrogenated amorphous silicon surfaces in electron cyclotron resonance hydrogen plasma annealing" J. Appl. Phys.85・2. 1172-1177 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Ito et.al: "Diamond deposition and behavior of atomic carbon species in a low pressure inductively coupled plasma" Jpn. J. Appl. Phys.in print (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] R.Nozawa et.al: "Low temperature poly-crystalline silicon formation with and without charged species in electron cyclotron resonance SiH4/H2 plasma enhanced chemical vapor deposition" J. Vac. Sci.Technol.in print (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] R.Nozawa et.al: "Effects of ions on surface morphology and structures of polycrystalline silicon films prepared by electron cyclotron resonance silane/hydrogen plasmas" PLASMA PROCESSING XI. Vol.11. 662-667 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] R.Nozawa et.al: "Substrate DC bias effects on low temperature polycrystalline silicon formation in electron cyclotron resonance plasma-enhanced chemical vapor deposition" J.Appl.Phys.Vol.79, No.6. 8035-8039 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Ito et.al: "Scanning tunneling microscopic and spectro-scopic characterization of diamond film prepared by capacitvely coupled radio frequency CH_3OH plasma with OH radical injection" Appl.Phys.Lett.Vol.70, No.16. 2141-2143 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Yamamoto et.al: "Effects of dilution gases on Si atom and SiHx^+ (x=0-3) ions in electron cyclotron resonance SiH_4 plasma" Jpn.J.Appl.Phys.Vol.37, No.7B. 4664-4669 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] R.Nozawa et.al: "In-situ observation of hydrogenated amorphous silicon surface in electron cyclotron resonance hydrogen plasma annealing" J.Appl.Phys.Vol.85, No.2. 1172-1177 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Ito et.al: "Diamond deposition and behavior of atomic carbon species in a low pressure inductively coupled plasma" Jpn.J.Appl.Phys.(in print). (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] R.Nozawa et.al: "Low temporature poly-crystalline silicon formation with and eithout charged species in electron cyclotron resonance SiH_4/H_2 plasma enhanced chemical vapor deposition" J.Vac.Sci.Technol.(in print). (1999)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-12-08  

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