1997 Fiscal Year Annual Research Report

ラングミュア吸着・反応制御プロセスを駆使して製作するIV族半導体極微細デバイス

Research Project

Project/Area Number	08405022
Research Institution	Tohoku University
Principal Investigator	室田淳一東北大学, 電気通信研究所, 教授 (70182144)
Co-Investigator(Kenkyū-buntansha)	櫻庭政夫東北大学, 電気通信研究所, 助手 (30271993) 松浦孝東北大学, 電気通信研究所, 助教授 (60181690)
Keywords	ラングミュア吸着・反応 / IV族半導体 / 極微細デバイス / 原子層成長 / 表面処理 / 原子層エッチング / 水素終端 / 低温ヘテロエピタキシャル成長
Research Abstract	本研究では、原子層成長・エッチング法等ラングミュア吸着・反応の制御プロセス技術を駆使して、IV族半導体極微細構造を形成する原子制御プロセス技術を開拓することを目的としている。本年度は、表面吸着・反応制御の研究として、Si-Ge-C-N系原子層成長、表面処理、並びに原子層エッチング、デバイス製作プロセスの研究として、高濃度不純物ドープSiGeの低温ヘテロエピタキシャル成長とその極微細デバイスへの応用の研究を中心に行った。原子層成長や表面処理の研究では、フッ酸処理及び高清浄熱処理によるSi及びGe表面の水素終端状態を明らかにし、SiH_4,GeH_4等の単分子吸着層の形成との関係を調べた。また、Si表面における500〜600℃でのCH_4や、300〜500℃でのNH_3の原子層吸着・反応量がLangmuir型吸着・脱離平衡で表され、CH_4の場合には脱離が無視できNH_3の場合は脱離の影響が大きいことを明らかにした。原子層エッチングの研究では、塩素の吸着と低エネルギーAr^+イオン照射を交互に行うことによりSiGeの自己制限型原子層エッチングが可能であり、さらに、絶縁膜であるSi窒化膜の原子層エッチングを役割分担型で行う検討を行いその可能性を明らかにした。極微細デバイス製作プロセスの研究では、MOSFETの極浅ソース・ドレイン層に用いる、PとBの高濃度ドープSiGe混晶の選択エピタキシャル成長過程について、表面吸着・反応ボンドサイトを仮定したLangmuir型モデルで定式化した。このプロセスで、ゲート電極寸法と実効チャネル長がほぼ等しい極微細MOSFETを実現した。

Research Products

(18 results)

All Other

All Publications (18 results)

[Publications] T.Watanabe, et al: "Atomic-Layer Sarface Reaction of SiH_4.on Ge(100)" Jpn.J,Appl.Phys. Part1. 36(6B). 4042-4045 (1997)
[Publications] A.Izena, et al: "Low-Temperature Surtace Reaction of CH_4 on the Si(100) Surface" J.Crystal Growth. (印刷中). (1998)
[Publications] C.J.Lee, et al: "Phosphorus Doping Effect on Si_<1-x> Ge_x Epitaxial Film Growth in the SiH_4-GeH_4-PH_3 Gas System Using Ultraclean LPCVO" CVD XIV. PV97-25. 1356-1363 (1997)
[Publications] J.Murota, et al: "Fabrication of 0.1μm MOSFET with Super Self-Aligned Ultrashallow Junction Electrodes Using Selective Si_<1-x> Ge_x CVD" SDERC 27. 27. 376-379 (1997)
[Publications] T.Matsuura, et al: "Atomic-Layer Etching Control of Si and Ge Using an Ultraclean ECR Plasma" National Symp.Am.Vac.Soc. 44. 176 (1997)
[Publications] Y.Honda, et al: "Atomic-Order Layer Role-Share Etching of Silicon Nitride Using an ECR Plasma" Plasma Processing XII. (印刷中). (1998)
[Publications] Y.Yamamoto, et al: "Surface Reaction of Alternately Supplied WF_6 and SiH_4 Gases" Surf.Sci.(印刷中). (1998)
[Publications] M.Sakuraba, etal: "H-Termination on Ge(100) and Si(100)by Diluted HF Dipping and by Annealing in H_2" 5th Int.Symp.Cleaming Technology in Semicond. Derice Manufacturing. PV97-35(印刷中). (1997)
[Publications] T.Matsuura, et al: "Atomic-Layer Sarface Reaction of Chlorine on Si and Ge Assisted by an Ultracleam ECR Plasma" Surf.Sci.(印刷中). (1998)
[Publications] T.Watanabe, et al: "Atomic-Order Nitridation of the H-Terminated and H-Free Si Surfaces by NH_3" CVD XIV. PV97-25. 97-104 (1997)
[Publications] J.Murota.et al: "Low Temperature Selective Heteroepitaxy of Heavily Doped Si_<1-x> Ge_x on Si for Application to Ultrasmall Devices" National Symp.Am.Vac.Soc.44. 176 (1997)
[Publications] J.Murota, et al: "Heavy Poping Characteristics of P and B in Si_<1-x>Ge_x Epitaxial Films" E-MRS Spring Meeting. (印刷中). (1998)
[Publications] T.Sugiyama, et al: "Atomic-Layer Etching of Ge Using an Ultraclean ECR Plasma" Appl.Surf.Sci.112. 187-190 (1997)
[Publications] S.Kobayashi, et al: "Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas" J.Crystal Growth. 174(1-4). 686-690 (1997)
[Publications] M.Ishii, et al: "0.1μm MOSFET with Saper Self-Aligned Shallow Junction Electrodes" ULSI Scince and Technology.,97. PV97-3. 441-449 (1997)
[Publications] J.Murota, et al: "Atomic-Layer Growth of Si on Ge(100) Using SiH_4" National Symp.Am.Vac.Soc.44. 175 (1997)
[Publications] A.Moriya, et al: "Low-Temperature Epitaxial Growth of In-Situ. Heavily B-Doped Si_<1-x>Gex Films Using Ultracleam LPCVD" MRS Spring Meeting. (印刷中). (1998)
[Publications] J.Murota, et al: "In-Situ Heary Doping of P and B in Low-Temperature Si_<1-x>Gex Epitaxial Growth Using Ultraclean LPCVD" Silicon Materials Science and Tednotogy VIII. (印刷中). (1998)

1997 Fiscal Year Annual Research Report

ラングミュア吸着・反応制御プロセスを駆使して製作するIV族半導体極微細デバイス

Principal Investigator

室田 淳一 東北大学, 電気通信研究所, 教授 (70182144)

Research Products

[Publications] T.Watanabe, et al: "Atomic-Layer Sarface Reaction of SiH_4.on Ge(100)" Jpn.J,Appl.Phys. Part1. 36(6B). 4042-4045 (1997)

[Publications] A.Izena, et al: "Low-Temperature Surtace Reaction of CH_4 on the Si(100) Surface" J.Crystal Growth. (印刷中). (1998)

[Publications] C.J.Lee, et al: "Phosphorus Doping Effect on Si_<1-x> Ge_x Epitaxial Film Growth in the SiH_4-GeH_4-PH_3 Gas System Using Ultraclean LPCVO" CVD XIV. PV97-25. 1356-1363 (1997)

[Publications] J.Murota, et al: "Fabrication of 0.1μm MOSFET with Super Self-Aligned Ultrashallow Junction Electrodes Using Selective Si_<1-x> Ge_x CVD" SDERC 27. 27. 376-379 (1997)

[Publications] T.Matsuura, et al: "Atomic-Layer Etching Control of Si and Ge Using an Ultraclean ECR Plasma" National Symp.Am.Vac.Soc. 44. 176 (1997)

[Publications] Y.Honda, et al: "Atomic-Order Layer Role-Share Etching of Silicon Nitride Using an ECR Plasma" Plasma Processing XII. (印刷中). (1998)

[Publications] Y.Yamamoto, et al: "Surface Reaction of Alternately Supplied WF_6 and SiH_4 Gases" Surf.Sci.(印刷中). (1998)

[Publications] M.Sakuraba, etal: "H-Termination on Ge(100) and Si(100)by Diluted HF Dipping and by Annealing in H_2" 5th Int.Symp.Cleaming Technology in Semicond. Derice Manufacturing. PV97-35(印刷中). (1997)

[Publications] T.Matsuura, et al: "Atomic-Layer Sarface Reaction of Chlorine on Si and Ge Assisted by an Ultracleam ECR Plasma" Surf.Sci.(印刷中). (1998)

[Publications] T.Watanabe, et al: "Atomic-Order Nitridation of the H-Terminated and H-Free Si Surfaces by NH_3" CVD XIV. PV97-25. 97-104 (1997)

[Publications] J.Murota.et al: "Low Temperature Selective Heteroepitaxy of Heavily Doped Si_<1-x> Ge_x on Si for Application to Ultrasmall Devices" National Symp.Am.Vac.Soc.44. 176 (1997)

[Publications] J.Murota, et al: "Heavy Poping Characteristics of P and B in Si_<1-x>Ge_x Epitaxial Films" E-MRS Spring Meeting. (印刷中). (1998)

[Publications] T.Sugiyama, et al: "Atomic-Layer Etching of Ge Using an Ultraclean ECR Plasma" Appl.Surf.Sci.112. 187-190 (1997)

[Publications] S.Kobayashi, et al: "Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas" J.Crystal Growth. 174(1-4). 686-690 (1997)

[Publications] M.Ishii, et al: "0.1μm MOSFET with Saper Self-Aligned Shallow Junction Electrodes" ULSI Scince and Technology.,97. PV97-3. 441-449 (1997)

[Publications] J.Murota, et al: "Atomic-Layer Growth of Si on Ge(100) Using SiH_4" National Symp.Am.Vac.Soc.44. 175 (1997)

[Publications] A.Moriya, et al: "Low-Temperature Epitaxial Growth of In-Situ. Heavily B-Doped Si_<1-x>Gex Films Using Ultracleam LPCVD" MRS Spring Meeting. (印刷中). (1998)

[Publications] J.Murota, et al: "In-Situ Heary Doping of P and B in Low-Temperature Si_<1-x>Gex Epitaxial Growth Using Ultraclean LPCVD" Silicon Materials Science and Tednotogy VIII. (印刷中). (1998)

室田淳一東北大学, 電気通信研究所, 教授 (70182144)