1998 Fiscal Year Annual Research Report

ラングミュア吸着・反応制御プロセスを駆使して製作するIV族半導体極微細デバイス

Research Project

Project/Area Number	08405022
Research Institution	TOHOKU UNIVERSITY
Principal Investigator	室田淳一東北大学, 電気通信研究所, 教授 (70182144)
Co-Investigator(Kenkyū-buntansha)	櫻庭政夫東北大学, 電気通信研究所, 助手 (30271993) 松浦孝東北大学, 電気通信研究所, 助教授 (60181690)
Keywords	ラングミュア吸着・反応 / IV族半導体 / 極微細デバイス / 原子層成長 / 原子層エッチング / ドーピング / 水素終端 / 低温ヘテロエピタキシャル成長
Research Abstract	821782 本基盤研究では、原子層成長・エッチング法等ラングミュア吸着・反応,の制御プロセス技術を駆使して、IV族半導体極微細デバイスの製作プロセス技術を確立することを目指して、その基礎から応用まで広く研究を行った。原子制御プロセスについては、SiとGeの一原子層ずつの成長、Si表面のNH_3による400℃での原子層窒化、Si表面のCH_4による500〜600℃での原子層炭化、SiおよびGe表面でのSiH_3CH_3の原子層吸着、Si及びGe表面へのPの原子層ドーピング、Si_<1-x>Ge_x系の分数原子層エッチング、Si窒化膜の役割分担原子層エッチング、WF_6とSiH_4の交互導入による水素終端制御Si表面での低温吸着・反応制御等を実現し、各々の素過程をhngrnuir型表面吸着・反応を基礎に考察した。ここで実験手法として、高清浄低温反応雰囲気、Xeフラッシュランプによる瞬時加熱法、ECRプラズマによる低エネルギーイオン照射法を駆使した。デバイス製作プロセスについては、ソース/ドレインの自己整合型極浅接合形成法を用いた極微細MOSFET、Si_<1-x>Ge_xの高Ge組成エピタキシャル層をチャネルに用いたMOSFET、それらに用いるSi_<1-x>Ge_xの高品質選択エピタキシャル成長とPやBの高濃度ドーピング、高濃度不純物ドープポリシリコンの高選択異方性エッチング、選択成長Wによるソース/ドレイン抵抗の低減等を実現した。本基盤研究の成果はSi集積回路製作プロセス技術の発展のため今後ますます重要になる技術であり、今後引き続いて関連研究を発展的に継続する予定である。

Research Products

(21 results)

All Other

All Publications (21 results)

[Publications] A.Izena et al: "Low-Temperature Reaction of CH_4 on Si(100)" J.Crystal Growth. 188,1-4. 131-136 (1998)
[Publications] T.Matsuura et al: "Atomic-Layer Surface Reaction of Chlorine on Si and Ge Assisted by an Ultraclean ECR Plasma" Surf.Sci.402-404. 202-205 (1998)
[Publications] Y.Yamamoto et al: "Surface Reaction of Alternately Supplied WF_6 and SiH_4 Gases" Surf.Sci.408,1-3. 190-194 (1998)
[Publications] T.Watanabe et al: "Atomic-Order Thermal Nitridation of Silicon at Low Temperatures" J.Electrochem.Soc.145,12. 4252-4256 (1998)
[Publications] T.Watanabe et al: "Separation between Surface Adsorption and Reaction of NH_3 on Si(100)by Flash Heating" Jpn.J.Appl.Phys.38,1B. 7717-7722 (1998)
[Publications] :A.Moriya et al: "Doping and Electrical Characteristics of In-Situ Heavily B-Doped Si_<1-x>Ge_xFilms" Thin Solid Films. (in press). (1998)
[Publications] A.Moriya et al: "Low-Temperature Epitaxial Growth of In-Situ Heavily B-Doped Si_<1-x>Ge_x Films Using Ultraclean LPCVD" Mat.Res.Soc.Symp.Proc.533. 349-354 (1998)
[Publications] J.Murota et al: "In-Situ Heavy Doping of P and B in Low-Temperature Si_<1-x>Ge_xEpitaxial Growth Using Ultraclean LPCVD" Proceedings of the 8th International Symposium on Silicon Materials Science and Technology. PV98-1. 822-833 (1998)
[Publications] Y.Honda et al: "Atomic-Order Layer Role-Share Etching of Silicon Nitride Using an ECR Plasma" Proceedings of the 12th International Symposium on Plasma Processing. PV98-4. 94-100 (1998)
[Publications] J.Murota et al: "Atomic-Layer Surface Reaction of NH_3 on Si(100)at Low temperatures" Abstract of 1998 International Symposium on Formation,Physics and Device Application of Quantum Dot Structures. Abs.No.Tu4-10. 134 (1998)
[Publications] J.Murota et al: "Process Technology for Sub 0.1μm Si Devices" Advanced Research Workshop Future Trends in Microelectronics. (1998)
[Publications] J.Murota et al: "Heavy Doping Characteristics of P and B in Si_<1-x>Ge_x Epitaxial Films" The European Materials Research Society Spring Meeting Abstract. D-24 (1998)
[Publications] C.J.Lee et al: "In-Situ Phosphorus Doping on Si_<1-x>Ge_x Epitaxial Growth in the SiH_4-GeH_4-PH_3 Gas System by Using LPCVD" Digest of 1998 International Microprocesses and Nanotechnology Conference. 31-32 (1998)
[Publications] T.Matsuura et al: "Atomic-Order Layer Etching of Silicon Nitride with a Role-Share Method Using an ECR Plasma" Abstract of 4th Asia-Pacific Conference on Plasma Science and Techonology & 11th Symposium on Plasma Science for Materials. 61 (1998)
[Publications] A.Moriya et al: "Doping and Electrical Characteristics of In-Situ Heavily B-doped Si_<1-x>Ge_x Films Epitaxially Growth Using Ultraclean LPCVD" Abstract of 14th International Vacuum Congress & 10th International Conference on Solid Surface. EM.WeA.4. 88 (1998)
[Publications] Y.Yamamoto et al: "Initial Reaction in Low-Temperature Selective Growth of W Using a WF_6 and SiH_4 Gas System" 194th Meeting Abstracts of The Electrochemical Society. 352 (1998)
[Publications] T.Watanabe et al: "Atomic-Layer Adsorption of P on Si(100)by Using Flash Heating" 194th Meeting Abstracts of The Electrochemical Society. 806 (1998)
[Publications] Y.Shimamune et al: "Atomic-Layer Nitridation of Si(100)by NH_3 Using Ultraclean LPCVD" 194th Meeting Abstracts of The Electrochemical Society. 784 (1998)
[Publications] T.Seino et al: "Atomic-Order Nitridation of Si by Radical-and Ion-Induced Reactions Using Ultraclean ECR Nitrogen Plasma" 194th Meeting Abstracts of The Electrochemical Society. 799 (1998)
[Publications] M.Sakuraba et al: "Surface Termination of the Ge(100)and Si(100) Surfaces by Using DHF Solution Dipping" Mat.Res.Soc.Symp.Proc.(in press). (1998)
[Publications] 室田淳一: "CVD薄膜形成における表面吸着水素の効果「ウェーハ表面完全性の創成・評価技術」,サイエンスフォーラム,第4章第3節,pp.160-167" 18 (1998)

1998 Fiscal Year Annual Research Report

ラングミュア吸着・反応制御プロセスを駆使して製作するIV族半導体極微細デバイス

Principal Investigator

室田 淳一 東北大学, 電気通信研究所, 教授 (70182144)

Research Products

[Publications] A.Izena et al: "Low-Temperature Reaction of CH_4 on Si(100)" J.Crystal Growth. 188,1-4. 131-136 (1998)

[Publications] T.Matsuura et al: "Atomic-Layer Surface Reaction of Chlorine on Si and Ge Assisted by an Ultraclean ECR Plasma" Surf.Sci.402-404. 202-205 (1998)

[Publications] Y.Yamamoto et al: "Surface Reaction of Alternately Supplied WF_6 and SiH_4 Gases" Surf.Sci.408,1-3. 190-194 (1998)

[Publications] T.Watanabe et al: "Atomic-Order Thermal Nitridation of Silicon at Low Temperatures" J.Electrochem.Soc.145,12. 4252-4256 (1998)

[Publications] T.Watanabe et al: "Separation between Surface Adsorption and Reaction of NH_3 on Si(100)by Flash Heating" Jpn.J.Appl.Phys.38,1B. 7717-7722 (1998)

[Publications] :A.Moriya et al: "Doping and Electrical Characteristics of In-Situ Heavily B-Doped Si_<1-x>Ge_xFilms" Thin Solid Films. (in press). (1998)

[Publications] A.Moriya et al: "Low-Temperature Epitaxial Growth of In-Situ Heavily B-Doped Si_<1-x>Ge_x Films Using Ultraclean LPCVD" Mat.Res.Soc.Symp.Proc.533. 349-354 (1998)

[Publications] J.Murota et al: "In-Situ Heavy Doping of P and B in Low-Temperature Si_<1-x>Ge_xEpitaxial Growth Using Ultraclean LPCVD" Proceedings of the 8th International Symposium on Silicon Materials Science and Technology. PV98-1. 822-833 (1998)

[Publications] Y.Honda et al: "Atomic-Order Layer Role-Share Etching of Silicon Nitride Using an ECR Plasma" Proceedings of the 12th International Symposium on Plasma Processing. PV98-4. 94-100 (1998)

[Publications] J.Murota et al: "Atomic-Layer Surface Reaction of NH_3 on Si(100)at Low temperatures" Abstract of 1998 International Symposium on Formation,Physics and Device Application of Quantum Dot Structures. Abs.No.Tu4-10. 134 (1998)

[Publications] J.Murota et al: "Process Technology for Sub 0.1μm Si Devices" Advanced Research Workshop Future Trends in Microelectronics. (1998)

[Publications] J.Murota et al: "Heavy Doping Characteristics of P and B in Si_<1-x>Ge_x Epitaxial Films" The European Materials Research Society Spring Meeting Abstract. D-24 (1998)

[Publications] C.J.Lee et al: "In-Situ Phosphorus Doping on Si_<1-x>Ge_x Epitaxial Growth in the SiH_4-GeH_4-PH_3 Gas System by Using LPCVD" Digest of 1998 International Microprocesses and Nanotechnology Conference. 31-32 (1998)

[Publications] T.Matsuura et al: "Atomic-Order Layer Etching of Silicon Nitride with a Role-Share Method Using an ECR Plasma" Abstract of 4th Asia-Pacific Conference on Plasma Science and Techonology & 11th Symposium on Plasma Science for Materials. 61 (1998)

[Publications] A.Moriya et al: "Doping and Electrical Characteristics of In-Situ Heavily B-doped Si_<1-x>Ge_x Films Epitaxially Growth Using Ultraclean LPCVD" Abstract of 14th International Vacuum Congress & 10th International Conference on Solid Surface. EM.WeA.4. 88 (1998)

[Publications] Y.Yamamoto et al: "Initial Reaction in Low-Temperature Selective Growth of W Using a WF_6 and SiH_4 Gas System" 194th Meeting Abstracts of The Electrochemical Society. 352 (1998)

[Publications] T.Watanabe et al: "Atomic-Layer Adsorption of P on Si(100)by Using Flash Heating" 194th Meeting Abstracts of The Electrochemical Society. 806 (1998)

[Publications] Y.Shimamune et al: "Atomic-Layer Nitridation of Si(100)by NH_3 Using Ultraclean LPCVD" 194th Meeting Abstracts of The Electrochemical Society. 784 (1998)

[Publications] T.Seino et al: "Atomic-Order Nitridation of Si by Radical-and Ion-Induced Reactions Using Ultraclean ECR Nitrogen Plasma" 194th Meeting Abstracts of The Electrochemical Society. 799 (1998)

[Publications] M.Sakuraba et al: "Surface Termination of the Ge(100)and Si(100) Surfaces by Using DHF Solution Dipping" Mat.Res.Soc.Symp.Proc.(in press). (1998)

[Publications] 室田淳一: "CVD薄膜形成における表面吸着水素の効果「ウェーハ表面完全性の創成・評価技術」,サイエンスフォーラム,第4章第3節,pp.160-167" 18 (1998)

室田淳一東北大学, 電気通信研究所, 教授 (70182144)