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1998 Fiscal Year Final Research Report Summary

Langmuir Adsorption and Reaction Control in Process for Fabrication of Ultrasmall Group IV Semiconductor Devices

Research Project

Project/Area Number 08405022
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionTOHOKU UNIVERSITY

Principal Investigator

MUROTA Junichi  RESEARCH INSTITUTE OF ELECTRICAL COMMUNICATION,TOHOKU UNIVERSITY PROFESSOR, 電気通信研究所, 教授 (70182144)

Co-Investigator(Kenkyū-buntansha) SAKURABA Masao  RESEARCH INSTITUTE OF ELECTRICAL COMMUNICATION,TOHOKU UNIVERSITY RESEARCH ASSOCI, 電気通信研究所, 助手 (30271993)
MATSUURA Takashi  RESEARCH INSTITUTE OF ELECTRICAL COMMUNICATION,TOHOKU UNIVERSITY ASSOCIATE PROFE, 電気通信研究所, 助教授 (60181690)
Project Period (FY) 1996 – 1998
KeywordsLangmuir-type Adsorption and Reaction / Group IV Semiconductor / Ultrasmall Devices / Atomic-Layer Growth / Atomic-Layer Etching / Impurity Doping / Hydrogen Termination / Low-Temperature Heteroepitaxial Growth
Research Abstract

In this scientific research, to establish fabrication process technology of ultrasmall group IVsemiconductor devices, extended researches have been carried out including fundamentals and applications of Langmuir-type adsorption/reaction process such as atomic-layer growth and etching. As to atomically controlled processing, by utilizing a low-temperature ultraclean reaction atmosphere, flash heating by Xe lamps, and low-energy ion irradiation by an ECR plasma, we have achieved atomic layer-by-layer growth of Si and Ge, atomic-layer nitridation of Si by NH_3 at 400゚C, atomic-layer carbonization of Si(100) by CH_4 at 500-600゚C, atomic-layer adsorption of SiH3CH3 on Si and Ge, atomic-layer doping of P on Si and Ge, fractional atomic-layer etching of a SiGe system, atomic-layer role-share etching of silicon nitride, etc. Adsorption and reaction process in low temperature selective deposition of W has been also investigated by alternate supply of WF6 and SiH_4. Each of these atomic-order processes has been described by Langmuir-type simple adsorption and reaction formalism, which contributes to establish a base of a high precision control of the process. As to device fabrication process, we have fabricated ultrasmall MOSFETs utilizing super-self-aligned ultrashallow junction formation in the source/drain region, and MOSFETs with a SiGe epitaxial layer as a channel. Also, we have developed each process such as selective epitaxy of SiGe and in-situ heavy doping with P and B, highly selective anisotropic etching of heavily doped polysilicon, reduction of source/drain resistance by selective growth of W, as well as a total ultrasmall device process by combination of these individual processes. These research results supply a fundamental key to ultrasmall device fabrication technology with group IVsemiconductors.

  • Research Products

    (75 results)

All Other

All Publications (75 results)

  • [Publications] T.Watanabe, et al: ""Atomic-Order Layer Growth of Silicon Nitride Films at Low Temperatures"." the 13th International Conference on Chemical Vapor Deposition. Vol.PV96-5. 504-509 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Yamamoto, et al: "“Selective Growth of W at Very Low Temperatures Using a WF_6-SiH_4 Gas System"." the 13th International Conference on Chemical Vapor Deposition. Vol.PV96-5. 814-820 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Sugiyama, et al: "“Atomic-Layer Etching of Ge Using an Ultraclean ECR Plasma"." 4th International Symposium on Atomic Layer Epitaxy and Related Surface Processes. Mo1510. (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Kobayashi, et al: "“Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas"." The 9th International Conference on Vapor Growth & Epitaxy. 116. (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Murota, et al: "“Atomic-Layer Surface Reaction of SiH_4 on Ge (100) and GeH_4 on Si (100) "." 1996 International Symposium on Formation. Physics and Device Application of Quantum Dot Structures (QDS'96).p.24. (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Sugiyama, et al: "“Atomic-Layer Etching of Ge Using an Ultraclean ECR Plasma"." Appl.Surf.Sci.112. 187-190 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Kobayashi, et al: "“Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas"." J.Crystal Growth.Vol.174, No-1-4,. 686-690 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Murota. et al: "“Atomic-Layer Surface Reaction of Silane on the Germanium (100) Surface"." Proceeding of the Second Topical Meeting on Structural Dynamics of Epitaxy and Quantum Mechanical Approach,. 97-101 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Ishii et al: "“0.1μm MOSFET with Super Self-Aligned Shallow Junction Electrodes"," ULSI Science and Technology′97,. PV97-3. 441-449 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] C.J.Lee, et al: "“Phosphorus Doping Effect on Si_<1-x>Ge_x Epitaxial Film Growth in the SiH_4-GeH_4-PH_3 Gas System Using Ultraclean LPCVD"," The 14th International Conference on Chemical Vapor Deposition.PV97-25. 1356-1363 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Watanabe, et al: "“Atomic-Order Nitridation of the H-Terminated and H-Free Si Surfaces by NH_3"," The 14th International Conference on Chemical Vapor Deposition.PV97-25. 97-104 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Sakuraba, et al: "“H-Termination on Ge (100) and Si (100) by Diluted HF Dipping and by Annealing in H_2"" 5th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.PV97-35. 213-220 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Watanabe, et al: "Atomic-Layer Surface Reaction of SiH_4 on Ge (100)" Jpn.J.Appl.Phys. Part1. 36(6B). 4042-4045 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Murota, et al: "Fabrication of 0.1μm MOSFET with Super Self-Aligaed Ultrashallow Junction Electrodes Using Selectire Si_<1-x>Ge_x CVD" SDERC 27. 27. 376-379 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Matsuura, et al: "Atomic-Layer Etching confrol of Si and Ge Using an Ultraclean ECR Plasma" National Symp.Am.Vac.Soc. 44. 176- (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Murota, et al: "Low Temperature Selective Heteroepitaxy of Heavily Doped Si_<1-X>Ge_X on Si for Application to Ultrasmall Devlces" National Symp.Am.Vac.Soc.44. 176- (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Murota, et al: "Atomic-Layer Growth of Si on Ge (100) Using SiH_4" National Symp.Am.Vac.Soc.44. 175- (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Izena et al: "Low-Temperature Reaction of CH_4 on Si (100)" J.Crystal Growth. 188, 1-4. 131-136 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Matsuura et al: "Atomic-Layer Surface Reaction of Chlorine on Si and Ge Assisted by an Ultraclean ECR Plasma" Surf.Sci.402-404. 202-205 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Yamamoto et al: "Surface Reaction of Alternately Supplied WF_6 and SiH_4 Gases" Surf.Sci.408, 1-3. 190-194 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Watanabe et al: "Atomic-Order Thermal Nitridation of Silicon at Low Temperatures" J.Electrochem.Soc.145, 12. 4252-4256 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Watanabe et al: "Separation between Surface Adsorption and Reaction of NH_3 on Si (100) by Flash Heating" Jpn.J.APPL.Phys.38, 1B. 7717-7722 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Moriya et al: "Doping and Electrical Characteristics of In-Situ Heavily B-Doped Si_<1-X>Ge_X Films Epitaxially Grown Using Ultraclean LPCVD" Thin Solid Films. in press. (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Moriya et al: "Low-Temperature Epitaxial Growth of In-Situ Heavily B-Doped Si_<1-X> Ge_X Films Using Ultraclean LPCVD" Mat.Res.Soc.Symp.Proc.533. 349-354 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Murota et al: "In-Situ Heavy Doping of P and B in Low-Temperature Si_<1-X> Ge_X Epitaxial Growth Using Ultraclean LPCVD" Proceedings of the 8th International Symposium on Silicon Materials Science and Technology. PV98-1. 822-833 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Honda et al: "Atomic-Order Layer Role-Share Etching of Silicon Nitride Using an ECR Plasma" Proceedings of the 12th International Symposium on Plasma Processing. PV98-4. 94-100 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Murota et al: "Atomic-Layer Surface Reaction of NH_3 on Si (100) at Low Temperatures" Abstract of 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures. Abs.No.Tu4-10. 134 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Murota et al: "Process Technology for Sub 0.1μm Si Devices" Advanced Research Workshop Future Trends in Microelectronics. in press. (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Murota et al: "Heavy Doping Characteristics of P and B in Si_<1-X> Ge_X Epitaxial Films" The European Materials Research Society Spring Meeting Abstract. D-24 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] C.J.Lee et al: "In-Situ Phosphorus Doping on Si_<1-X> Ge_X Epitaxial Growth in the SiH_4-GeH_4-PH_3 Gas System by Using LPCVD" Digest of 1998 International Microprocesses and Nanotechnology Conference. 31-32 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Matsuura et al: "Atomic-Order Layer Etching of Silicon Nitride with a Role-Share Method Using an ECR Plasma" Abstract of 4th Asia-Pacific Conference on Plasma Science and Technology & 11th Symposium on Plasma Science for Materials. 61 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Moriya et al: "Doping and Electrical Characteristics of In-Situ Heavily B-doped Si_<1-X> Ge_X Films Epitaxially Grown Using Ultraclean LPCVD" Abstract of 14th International Vacuum Congress & 10th International Conference on Solid Surfaces. EM.WeA.4. 88 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Yamamoto et al: "Initial Reaction in Low-Temperature Selective Growth of W Using a WF_6 and SiH_4 Gas System" 194th Meeting Abstracts of The Electrochemical Society. 352 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Watanabe et al: "Atomic-Layer Nitridation of Si(100) by NH_3 Using Flash Heating" 194th Meeting Abstracts of The Electrochemical Society. 806 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Shimamune et al: "Atomic-Layer Adsorption of P on Si (100) by Using Ultraclean LPCVD" 194th Meeting Abstracts of The Electrochemical Society. 784 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Seino et al: "Atomic-Order Nitridation of Si by Radical-and Ion-Induced Reactions Using an Ultraclean ECR Nitrogen Plasma" 194th Meeting Abstracts of The Electrochemical Society. 799 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Sakuraba et al: "Surface Termination of the Ge (100) and Si (100) Surfaces by Using DHF Solution Dipping" Mat.Res.Soc.Symp.Proc.in press. (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 室田淳一: "CVD薄膜形成における表面吸着水素の効果「ウェーハ表面完全性の創成・評価技術」, サイエンスフォーラム, 第4章第3節, pp.160-167" 18 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Watanabe, M.Sakuraba, T.Matsuura and J.Murota: "Atomic-Order Layer Growth of Silicon Nitride Films at Low Temperatures" Proc.13th Int.Conf.on Chemical Vapor Deposition. Vol.PV96-5. 504-509 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Yamamoto, T.Matsuura and J.Murota: "Selective Growth of W at Very Low Temperatures Using a WF_6-SiH_4 Gas System" Proc.13th Int.Conf.on Chemical Vapor Deposition. Vol.PV96-5. 814-820 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Sugiyama, T.Matsuura, and J.Murota: "Atomic-Layer Etching of Ge Using an Ultraclean ECR Plasma" Proc.4th Int.Symposium on Atomic Layer Epitaxy and Related Surface Processes. MO1510 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Kobayashi, M.Sakuraba, T.Matsuura, J.Murota, and N.Mikoshiba: "Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas" The 9th Internatioal Conference on Vaopr Growth & Epitaxy. 116 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Murota, M.Sakuraba, T.Watabane and T.Matsuura: "Atomic-Layer Surface Reaction of SiH_4 on Ge (100) and GeH_4 on Si (100)" 1996 International Symposium on Formation. Physics and Device Application of Quantum Dot Structures (QDS'96). 24 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Sugiyama, T.Matsuura, and J.Murota: "Atomic-Layer Etching of Ge Using an Ultraclean ECR Plasma" Appl.Surf.Sci.Vol.112. 187-190 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Kobayashi, M.Sakuraba, T.Matsuura, J.Murota, and N.Mikoshiba: "Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas" J.Crystal Growth. Vol.174, No.1-4. 686-690 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Murota, M.Sakuraba, T.Watanabe and T.Matsuura: "Atomic-Layer Surface Reaction of SiH_4 on Ge (100) and GeH_4 on Si (100)" Proc.of the Second Topical Meeting on Structural Dynamics of Epiatxy and Quantum Mechanical Approach. 97-101 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Ishii, K.Goto, M.Sakuraba, T.Matsuura, J.Murota, K.Kudoh and M.Koyanagi: "0.1mum MOSFET with Super Self-Ainged Shallow Junction Electrodes" Proc.6th Int.Symp.on Ultra Large Scale Integration Science and Technology. Vol.PV97-3. 441-449 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Murota, M.Sakuraba, T.Watanabe and T.Matsuura: "Atomic-Layer Surface Reaction of SiH_4 on Ge (100) and GeH_4 on Si (100)" 1996 International Symposium on Formation. Physics and Device Application of Quantum Dot Structures (QDS'96). 24 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.J.Lee, M.Sakuraba, T.Matsuura and J.Murota: "Phosphorus Doping Effect on Si_<1-x>Ge_x Epitaxial Film Growth in the SiH_4-GeH_4-PH_3 Gas System Using Ultraclean LPCVD" Proc.14th Int.Conf.on Chemical Vapor Deposition. Vol.PV97-25. 1356-1363 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Watanabe, M.Sakuraba, T.Matsuura and J.Murota: "Atomic-Order Nitridation of the H-Terminated and H-Free Si Surfaces by NH_3" Proc.14th Int.Conf.on Chemical Vapor Deposition. Vol.PV97-25. 97-104 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Sakuraba, T.Matsuura and J.Murota: "H-Termination on Ge (100) and Si (100) by Diluted Hf Dipping and by Annealing in H_2" Proc.5th Int.Symp.on Cleaning Technology in Semiconductor Device Manufacturing. PV97-35. 213-220 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Watanabe, M.Sakuraba, T.Matsuura, and J.Murota: "Atomic-Layer Surface Reaction of SiH_4 on Ge (100)" Jpn.J.Appl.Phys.Vol.36, Part 1, No.6B. 4042-4045 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Murota, M.Ishii, K.Goto, M.Sakuraba, T.Matsuura, Y.Kudoh and M.Koyanagi: "Fabrication of 0.1 m MOSFET with Super Self-Aligned Ultrashallow Junction Electrodes Using Selective Si_<1-x>Ge_x CVD" Proc.27th European Solid-State Device Research Conf., Stuttgart, Germany, September. 22-24. 376-379 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Matsuura, T.Sugiyama and J.Murota: "Atomic-Layer Etching Control of Si and Ge Using an Ultraclean ECR Plasma" 44th National Symp.of American Vacuum Society, San Jose, California, October. 20-24. 176 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Murota, M.Sakuraba and T.Matsuura: "Low Temperature Selective Heteroepitaxy of Heavily Doped Si_<1-x>Ge_x on Si for Application to Ultrasmall Devices" 44th Nathional Symp.of American Vacuum Society, San Jose, California, October. 20-24. 176 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Murota, M.Sakuraba, T.Watanabe and T.Matsuura: "Atomic-Layer Growth of Si on Ge (100) Using SiH_4" 44th National Symp.of American Vacuum Society, San Jose, California, October. 20-24. 175 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Izena, M.Sakuraba, T.Matsuura and J.Murota: "Low-Temperature Surface Reaction of CH_4 on Si (100)" J.Crystal Growth. (in press), Vol.188, No.1-4. 131-136 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Matsuura, T.Sugiyama and J.Murota: "Atomic-Layer Surface Reaction of Chlorine on Si and Ge Assisted by anUltraclean ECR Plasma" Surf.Sci.Vol.402-404. 202-205 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Yamamoto, T.Matsuura and J.Murota: "Surface Reaction of Alternately Supplied WF_6 and SiH_4 Gases" Surf.Sci.Vol.408, No.1-3. 190-194 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Watanabe, A.Ichikawa, M.Sakuraba, T.Matsuura and J.Murota: "Atomic-Order Thermal Nitridation of Silicon at Low Temperatures" J.Electrochem.Soc.Vol.145, No.12. 4252-4256 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Watanabe, M.Sakuraba, T.Matsuura and J.Murota: "Separation between Surface Adsorption and Reaction of NH_3 on Si (100) by Flash Heating" Jpn.J.Appl.Phys.Vol.38, Part1, No.1B. 515-517 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Moriya, M.Sakuraba, T.Matsuura and J.Murota: "Doping and Electrical Characteristics of In-Situ Heavily B-Doped Si_<1-x>Ge_x Films Epitaxially Grown Using Ultraclean LPCVD" Thin Solid Films. (in press).

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Moriya, M.Sakuraba, T.Matsuura, J.Murota, I.Kawashima, and N.Yabumoto: "Low-Temperature Epitaxial Growth of In-Situ Heavily B-Doped Si_<1-x>Ge_x Films Using Ultraclean LPCVD" SYMPOSIUM FF (Epitaxy and Applications of Si-Based Heterostructures), FF9.8., MRS SPRING MEETING,San Francisco, April. 13-17. 490 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Murota, A.Moriya, M.Sakuraba, C.J.LEE,and T.Matsuura: "In-Situ Heavy Doping of P and B in Low-Temperature Si_<1-x>Ge_x Epitaxial Growth Using Ultraclean LPCVD" Eighth Int.Symp.on Silicon Materials Science and Technology in the 193rd Meeting of The Electrochemical Society, San Diego, California, May. 3-8 PV98-1. 822-833 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Honda, T.Matsuura and J.Murota: "Atomic-Order Layer Role-Share Etching of Silicon Nitride Using an ECR Plasma" PLASMA PROCESSING X II The Electrochemical Society, San Diego, California, May. 3-8.PV.98-4. 94-100 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Murota, T.Watanabe, M.Sakuraba and T.Matsuura: "Atomic-Layer Surface Reaction, of NH_3 on Si (100) at Low temperatures" 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS'98, Sapporo, Japan, May 31-June. 4 Abs.No.Tu4-10. 134 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Murota, T.Matsuura and M.Sakuraba: "Process Technology for Sub 0.1mum Si Devices" 1998 Advanced Research Workshop Future Trends in Microelectronics : Off the Beaten Path, Ile des Embiez, France, May 31-June. 5 (in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.J.Lee, T.Matsuura and J.Murota: "In-Situ Phosphorus Doping on Si_<1-x>Ge_x Epitaxial Growth in the SiH_4-GeH_4-PH_3 Gas System by Using LPCVD" Digest of 1998 International Microprocesses and Nanotechnology Conference, Kyungju, Korea, July. 13-16. 31-32 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Matsuura, Y.Honda and J.Murota: "Atomic-Order Layer Etching of Silicon Nitride with a Role-Share Method Using an ECR Plasma" 4th Asia-Pacific Conference on Plasma Science & Technology (APCPST'98) & 11th Symposium on Plasma Science for Materials (SPSM'98), Sydney, NSW,Australia, July. 27-29. 61 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Moriya, M.Sakuraba, T.Matsuura and J.Murota: "Doping and Electrical Characteristics of In-Situ Heavily B-doped Si_<1-x>Ge_x Films Epitaxially Grown Using Ultraclean LPCVD" 14th International Vacuum Congress (IVC-14), 10th International Conference on Solid Surfaces (ICSS-10), Birmingham, UK,August 31-September. 4, Abs.No.EM.WeA.4. 88 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Yamamoto, T.Matsuura and J.Murota: "Initial Reaction in Low-Temperature Selective Growth of W Using a WF_6 and SiH_4 Gas System" 194th Meeting of The Electrochemical Society, Boston, Massachusetts, USA,November. 1-6 Abs.No.352. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Watanabe, M.Sakuraba, T.Matsuura and J.Murota: "Atomic-Layer Nitridation of Si (100) by NH_3 Using Flash Heating" 194th Meeting of The Electrochemical Society, Boston, Massachusetts, USA,November. 1-6 Abs.No.806. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Shimamune, M.Sakuraba, T.Matsuura and J.Murota: "Atomic-Layer Adsorption of P on Si (100) by Using Ultraclean LPCVD" 194th Meeting of The Electrochemical Society, Boston, Massachusetts, USA,November. 1-6 Abs.No.784. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Seino, T.Matsuura and J.Murota: "Atomic-Order Nitridation of Si by Radical- and Ion-Induced Reactions Using an Ultraclean ECR Nitrogen Plasma" 194th Meeting of The Electrochemical Society, Boston, Massachusetts, USA,November. 1-6 Abs.No.799. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Sakuraba, T.Matsuura and J.Murota: "Surface Termination of the Ge (100) and Si (100) Surfaces by Using DHF Solution Dipping" 1998 Fall MEETING,Materials Research Society, Symposium I (III-V and SiGe Group IV Device/IC Processing Challenges for Commercial Applications), Boston, Massachusetts, USA.November 30-December 4. (in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-12-08  

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