1996 Fiscal Year Final Research Report Summary
Real-Time Analysis of Surface Reaction by X-Ray Photoemission Electron Microscope
| Project/Area Number |
08454176
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Physical chemistry
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| Research Institution | The University of Tokyo |
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Principal Investigator |
IWASAWA Yasuhiro The University of Tokyo, Graduate School of Science, Professor, 大学院・理学系研究科, 教授 (40018015)
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| Co-Investigator(Kenkyū-buntansha) |
FUKUI Ken-ichi The University of Tokyo, Graduate School of Science, Research Associate, 大学院・理学系研究科, 助手 (60262143)
ONISHI Hiroshi The University of Tokyo, Graduate School of Science, Lecturer, 大学院・理学系研究科, 講師 (20213803)
ASAKURA Kiyotaka The University of Tokyo, Graduate School of Science, Associate Professor, 大学院・理学系研究科, 助教授 (60175164)
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| Project Period (FY) |
1996
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| Keywords | X-ray Photoemission Electron Microscope / Scanning Tunneling Microscope / Reflection Absorption Infrared Spectroscopy / Surface Reaction / Solid Surface / Catalyst / In-Situ Analysis / Visualization |
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| Research Abstract |
The goal of this project is to observe reaction on solid surface in-situ by X-ray photoelectron emission microscope. We have disigned and constructed a X-ray photoelectron emission microscope (XPEEM). By adding a Wien filter for energy selection of X-ray excited photoelectron to an existing low-energy electron microscope (LEEM), it is possible to image the spatial distribution of a particular element at a particular chemical shift on a solid surface. A spatially-resolved total photoelectron image of a silicon wafer and energy spectrum of Au (4f) emission have been successfully observed with the microscope.
As the optimization of the XPEEM,surface reaction at titanium oxide and silicon oxide model catalysts has been observed in-situ by scanning tunneling microscope (STM) and reflection absorption infrared spectroscopy (RAIRS). By combining those techniques with XPEEM,the real-time visualization of surface reaction will be achieved.
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