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1998 Fiscal Year Final Research Report Summary

Growth and properties of III-V-semiconductor/ferromagnet hybrid materials system (GaAs : Mn)

Research Project

Project/Area Number 08455006
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionThe University of Tokyo

Principal Investigator

TANAKA Masaaki  Graduate School of Engineering, The University of Tokyo, Associate Professor, 大学院・工学系研究科, 助教授 (30192636)

Co-Investigator(Kenkyū-buntansha) NARITSUKA Shigeya  Graduate School of Engineering, The University of Tokyo, Research Associate, 大学院・工学系研究科, 助手 (80282680)
NISHINAGA Tatau  Graduate School of Engineering, The University of Tokyo, Professor, 大学院・工学系研究科, 教授 (10023128)
Project Period (FY) 1996 – 1998
KeywordsGaAs : Mn / MnAs / GaAs / Si substrates / III-V-semiconductor / ferromagnet hybrid materials system / molecular beam epitaxy (MBE) / ferromagnmet-semiconductor heterostructures / ferromagnetic semiconductor GaMnAs / スピンバルブ / 磁気結合
Research Abstract

Recent progress in epitaxial growth technology has made it possible to prepare a variety of new artificial thin films and heterostructures (HSs) consisting of dissimilar materials. Among them, stable epitaxial ferromagnet/semiconductor HSs offer unprecedented opportunities for basic and applied research, adding a new degree of freedom in materials design. We have studied epitaxial growth and physical properties of such novel dissimilar heterostructures focusing on ferromagnetic compound/Ill-V semiconductor systems.
We have successfully grown MnAs/GaAs(00l) and MnAs/Si(001) ferromagnet/semiconductor single HSs, and MnAs/GaAs/MnAs ferromagnet/semiconductor trilayer HSs on GaAs (111)B and on Si(111) substrates by molecular-beam epitaxy (MBE). Despite dissimilarity in crystal structure, chemical bonding, electronic and magnetic properties, cross-sectional images by transmission electron microscopy showed that the HSs are formed as intended with fairly smooth and atomically abrupt interfaces. In the trilayer HSs, double-step features were observed in magnetization characteristics due to the difference in coercive force between the top and bottom MnAs layers. The interlayer coupling was little when the thickness of the GaAs spacer layer was 5-10 nm.
We have also studied epitaxial growth and properties of (GaMn)As thin films and (GaMn)As/A1As quantum HSs grown by low-temperature MBE.(GaMn)As is a new class of III-V based magnetic alloy semiconductor, which contains a large amount of Mn atoms (up to -8%) far above the equilibrium solubility limit of Mn in GaAs. We show that the feasibility of preparing such a III-V based ferromagnetic semiconductor and its HSs gives a new degree of freedom in the materials design of III-V systems, as well as device applications using both magnetic and optical/electronic functions in III-V semiconductors.

  • Research Products

    (27 results)

All Other

All Publications (27 results)

  • [Publications] T.Hayashi,M.Tanaka,K.Seto,T.Nishinaga,H.Shimada,K.Ando: "Hall Effect and Magnetic Properties of III-V Based (GaMn)As /AIAS Magnetic Semiconductor Superlattices" Journal of Applied Physics. 83. 6551-6553 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Masaaki Tanaka (Invited paper): "Epitaxial Ferromagnetic Thin Films and Heterostructures of Mn-based Metallic and Semiconducting Compounds on GaAs" Physica. E2. 372-380 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Masaaki Tanaka (Invited paper): "Epitaxial Growth and Properties of III-V Based Ferromagnetic Semiconductor (GaMn) As and Its Heterostrulctures" Journal of Vacuum Science & Technology. B16. 2267-2274 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Tanaka,K.Saito,and T.Nishinaga: "Epitaxial MnAs/GaAs/MnAs Trilayer Magnetic Heterostructures" Applied Physics Letters. 74. 64-66 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Shimizu,T.Hayashi,T.Nishinaga and M.Tanaka: "Magnetic and Transport Properties of III-V Based Magnetic Semiconductor (GaMn)As : Growth Condition Dependence" Applied Physics Letters. 74. 398-400 (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Tanaka (Invited paper): "Ferromagnet Semiconductor Hybrid Structures Grown by Molecular Beam Epitaxy" Journal of Crystal Growth. (in press). (1999)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Akeura, M.Tanaka, T.Nishinaga, and J.De Boeck: "Epitaxial Growth and Magnetic Properties of MnAs Thin Films Directly Grown on Si (001)" J.Appl.Phys.79. 4957-4959 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.C.Park, Y.Park, T.Shin, G.M.Rothberg, M.Tanaka, J.P.Harbison: "Galvanomagnetic Properties and Magnetic Domain Structure of Epitaxial MnAs Thin Films on GaAs" J.Appl.Phys.79. 4967-4969 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Tanaka, J.P.Harbison and G.M.Rothberg: "Epitaxial MnAs/NiAs Magnetic Multilayers on (001) GaAs Grown by Molecular Beam Epitaxy" J.Magnetism & Magnetic Materials. 156. 306-308 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Shin, M.C.Park, Y.Park, G.M.Rothberg, J.P.Harbison, and M.Tanaka: "Magnetism of Epitaxial MnxNil-xAs Films on GaAs (001)" Appl.Phys.Lett.70. 258-260 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Tanaka, T.Hayashi, T.Nishinaga and H.Shimada: "Epitaxial Growth and Magnetic Properties of New III-V Diluted Magnetic Semiconductors : GaMnAs (in Japanese)" J.Magnetics Society of Japan. 21. 293-296 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Hayashi, M.Tanaka, T.Nishinaga and H.Shimada: "GaMnAs : New III-V Based Diluted Magnetic Semiconductors Grown by Molecular Beam Epitaxy" J.Crystal Growth. 175/176. 1063-1068 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Hayashi, M.Tanaka, T.Nishinaga and H.Shimada: "Magnetic and Magnetotransport Properties of a New III-V Diluted Magnetic Semiconductor : GaMnAs" J.Appl.Phys.81. 4865-4867 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Hayashi, M.Tanaka, K.Seto, T.Nishinaga, and K.Ando: "New III-V Based Magnetic (GaMnAs) /Nonmagnetic (AlAs) Semiconductor Superlattices" Appl.Phys.Lett.71. 1825-1827 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Hayashi, M.Tanaka, K.Seto, T.Nishinaga, H.Shimada, and K.Ando: "Hall Effect and Magnetic Properties of III-V Based (Gal-xMnx) As/AlAs Magnetic Semiconductor Superlattices" J.Appl.Phys.83. 6551-6553 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Ando, T.Hayashi, M.Tanaka, A.Twardowski: "Magnetooptic Effect of Ferromagnetic Diluted Magnetic Semiconductor Gal-xMnxAs" J.Appl.Phys.83. 6548-6550 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] R.Shioda, K.Ando, T.Hayashi, M.Tanaka: "Local Structures of III-V Diluted Magnetic Semiconductor GaMnAs Studied by Extended X-ray Absorption Fine Structure" Phys.Rev.B58. 1100-1102 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Masaaki Tanaka (Invited paper): "Epitaxial Ferromagnetic Thin Films and Heterostructures of Mn-based Metallic and Semiconducting Compounds on GaAs" Physica. E2. 372-380 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Hayashi, M.Tanaka, K.Seto, T.Nishinaga, and H.Shimada: "Magnetotransport Properties of New III-V Based Magnetic (GaMnAs)/Nonmagnetic (AlAs) Semiconductor Superlattices" Physica. E2. 404-407 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Masaaki Tanaka (Invited paper): "Epitaxial Growth and Properties of III-V Based Ferromagnetic Semiconductor (GaMn) As and Its Heterostructurres" J.Vac.Sci.& Technol.B16. 2267-2274 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Okabayashi, A.Kimura, A.Fujimori, T.Hayashi, and M.Tanaka: "Core-level Photoemission of (Gal-xMnx) As" Phys.Rev.B58. R4211-R4214 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Shimada, O.Rader, A.Fujimori, A.Kimura, N.Kamakura, A.Kakizaki, K.Ono, M.Tanaka, M.Shirai: "Spin and Angle-Resolved Photoemission Spectroscopy of Ferromagnetic MnAs" J.Electron Spectroscopy and Related Phenomena. 88-91. 207-212 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Nakamura, M.Shuzo, K.Ono, H.Fujioka, M.Tanaka, T.Nishinaga, Y.Watanabe M.Oshima: "The Evidence for a Preferencial Growth of a MnAs Thin Film on an As-Preadsorbed Si (001) Surface" Applied Surface Science. 130-132. 128-132 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Tanaka, K.Saito, and T.Nishinaga: "Epitaxial MnAs/GaAs/MnAs Trilayer Magnetic Heterostructures" Appl.Phys.Lett.74. 64-66 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Shimizu, T.Hayashi, T.Nishinaga and M.Tanaka: "Magnetic and Transport Properties of III-V Based Magnetic Semiconductor (GaMn) As : Growth Condition Dependence" Appl.Phys.Lett.74. 398-400 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Shimizu, T.Hayashi, T.Nishinaga and M.Tanaka: "Properties of III-V Based Ferromagnetic Semiconductor (GaMn) As : As Pressure Dependence" J.Magn.Soc.Jpn.23. 96-98 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Okabayashi, A.Kimura, T.Mizokawa, A.Fujimori, T.Hayashi, and M.Tanaka: "Mn 3d Partial Density of States in (GaMn) As Studied by Resonance Photoemission Spectroscopy" Phys.Rev.B59. R2486-R2489 (1999)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-12-08  

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