1997 Fiscal Year Final Research Report Summary
Observation of hydrogen-induced surface segregation of metals on Si by STM and ISS
| Project/Area Number |
08455025
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
表面界面物性
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| Research Institution | Osaka Institute of Technology |
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Principal Investigator |
KATAYAMA Itsuo Dept.of Info.Sci.Osaka Institute of Technology Professor, 情報科学部, 教授 (40079603)
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| Co-Investigator(Kenkyū-buntansha) |
OHBA Yasuyuki Dept.of Eng.Osaka Institute of Technology Associate Professor, 工学部, 講師 (30079602)
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| Project Period (FY) |
1996 – 1997
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| Keywords | Si (111) / Pb / Si / STM / Epitaxy / metal / Si interface |
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| Research Abstract |
We have reported that epitaxial growth mode of thin metallic films on the Hydrogen-terminated Si surfaces were slightly different from that on the clean Si surfaces. Our subject on this research project supported by a Grant-in-Aid for Scientific Research is to clarify the mechanism of the role of Hydrogen to thin film growth and/or to get a key to control the surface segregation of metals on Si by Hydrogen interaction. We observed the phenomena atomically with use of a scanning tunneling microscopy (STM) and an Ion Scattering Spectroscopy (ISS). The new findings are as follows.
(1) Initial stage of 2-dimensional Ag-Si superlattice changes to 3-dimensional intrinsic Ag cluster growth after the Hydrogen termination. The phenomenon is reversible. The size and the distribution of the Ag clusters are uniform and not influenced by the substrate temperature. This means that the surface segregation of Ag atoms seems to show no dependence on the temperature, suggesting the possibility of modification of surface segregation by hydrogen.
(2) Initial stage of 2-dimensional Pb-Si superlattice changes to 3-dimensional intrinsic Pb cluster growth after the Hydrogen termination, no matter as the structure of the Pb-Si superlattice.
(3) Through the change of 3-dimensional clusters from the 2-dimensional superlattices, bare Si areas are produced, where Si atoms from specific structures not depending on Pb-Si superlattice structures and depending on the Ag-Si superlattice structures.
These results cause the key of control of surface segregation by hydrogen termination.
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