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1997 Fiscal Year Final Research Report Summary

Low-Temperature Processing Technology of SiC Devices

Research Project

Project/Area Number 08455143
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionNagoya Institute of Technology

Principal Investigator

NAKASHIMA Kenshiro  Nagoya Institute of Technology, Dept.of Engineering, Professor, 工学部, 教授 (80024305)

Co-Investigator(Kenkyū-buntansha) ERYU Osamu  Nagoya Institute of Technology, Dept.of Engineering, Assoc.professor, 工学部, 助教授 (10223679)
Project Period (FY) 1996 – 1997
KeywordsSilicon carbide / laser doping / excimer laser / Aluminum / Nickel / Tungsten / ohmic electrode / ohmic contact / laser ablation
Research Abstract

(1) Results in 1996
(a) Aluminum atoms have been doped in n type 6H-SiC (n= 1.4x10^<18>cm^<-3>) and 4H-SiC substrates set in doping chamber containing mixed gases of tri-methyl aluminum and hydrogen with a pressure of 100 Torr. Al atoms are distributed in the range of 50 nm, and the doped region showed p type conduction in as-doped conditions. Hole concentration and the mobility are estimated to be 2-4x10^<18>cm^<-3>,1-2x10^2cm^2/Vsec, and 2-4x10^<18>cm^<-3>,70-100cm^2/Vsec, respectively.
(b) Ni-ohmic electrodes have been fabricated on n-type 6H-SiC substrates (n= 1.5x10^<18>cm^<-3>) by KrF excimer laser irradiation during Ni deposition. A shallow Ni-doped layr 120nm deep was formed by room temperature processes (laser energy density 1.0J/cm^2 and 1,000 pulses). Contact resistivity was estimated to be 6x10^<-3>OMEGAcm^2.
Results in 1997
(c) Boron-doping has been examined in n-type 6H-SiC substrates set in the gas mixture of tri-methyl boron and hydrogen by using KrF excimer laser irradiation processes. Inconditions of the laser energy density 0.8J/cm^2 and number of laser shots 1000-5000, SIMS analysis shows B atoms are doped in the range of 10-20 nm. P-type conduction with Hall measurements has not been assured due to shallow depth of the doped region
(d) Tungsten ohmic contacts stable at 1000゚C (2 hours) have been fabricated on n-type 6H-SiC (n= 1.8x10^<18>cm^<-3>) substrates using both laser ablation of W pellets (purity 99.9%), and laser doping of deposited W with a KrF excimer laser inthe same process chamber. Shallow and abrupt contacts formed 10-20 nm deep in the substrates showed good ohmic characteristics without post-heat treatments (contact resistivity 2.2x10^<-4>OMEGAcm^2). The surface was found to be very smooth even after laser irradiation of the energy density 2.0J/cm^2.

  • Research Products

    (9 results)

All Other

All Publications (9 results)

  • [Publications] O.Eryu 他4名: "Formation of an ohmic electrode in SiC using a pulsed laser irradiation method" Nuclear Instruments and Methods in Physics Research. B121. p.419-421 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Kume 他3名: "Fabrication of ohmic contact to 6H-SiC at room temperature using pulsed laser doping method" International workshop on hard electronics abstracts. p.27- (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Nakashima 他4名: "Formation of tungsten ohmic contact on n-type 6H-SiC by pulsed laser processes" Material Science Forum. vols264-268. p.779-782 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] O.Eryu 他1名: "半導体SiCにおけるレーザープロセッシング" SiC及び関連ワイドギャップ半導体研究会第6回講演会予稿集. p.54- (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] O.Eryu et al.: "Formation of an ohmic electrode in SiC using a pulsed laser irradiation" Nucl.Instrum. Methods in Phys.Research. Vol.B121. 419-421 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Kume et al.: "Fabrication of ohmic contact to 6H-SiC at room temperature using pulsed laser doping method" International workshop on hard electronics abstracts. 27. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Nakashima et al.: "Formation of tungsten ohmic contact on n-type 6H-SiC by pulsed laser processes" Materials Science Forum. Vol.264-268. 779-782 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] O.Eryu et al.: "Laser processing in semiconductor SiC (in Japnaese)" The 6th Forum on SiC and related wide-gap semiconductors abstracts. 54. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] O.Eryu et al.: "Formation of a p-n junction in silicon carbide by aluminum doping at room temperature using a pulsed laser doping method" Appl.Phys.Lett.Vol.67. 2052-2053 (1995)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-03-16  

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