1997 Fiscal Year Final Research Report Summary
Fundamental Research of the Delamination by H^+ Implantation
| Project/Area Number |
08455151
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Hosei Univ. |
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Principal Investigator |
HARA Tohru Hosei Univ.Engineering, Professor, 工学部, 教授 (00147886)
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| Co-Investigator(Kenkyū-buntansha) |
SATO Masataka Hosei Univ.Engineering, Professor, イオンビーム工学研究所, 助教授 (40215843)
YAMAMOTO Yasuhiro Hosei Univ.Engineering, Professor, 工学部, 教授 (50139383)
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| Project Period (FY) |
1996 – 1997
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| Keywords | Ion Implantation / H / Si / Sol / Delamination / Thin layr |
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| Research Abstract |
Delamination of Stand Sic is studied in this project. Hydrogen ion is implanted at different energios and doses into Si. SiC and GaAs crystal it hasbeen studbee from these experiment that then lages is delaminated in Si at doses abore 5*10^<16> ions/cm^2. This condtion is cveakly dependent on energy. Thickness of the delaminetion canbe caried lireaoly with energy. This delamination, however, occurs at doses above 2*10^<17> ions/cm^2 in SiC and does not occur in GaAs.
Delamination tenperature, Td, defined by occuring of the delamination, is oooc at 10min in Si. It decreases with the increasing of annealing time and reachos 400ﾟC in annealing for 120min.
These ion implantation and annealing cenditions are usefal for the manufacture of advanced Solwater.
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