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1998 Fiscal Year Final Research Report Summary

STUDY OF ULTRA-HIGH-SPEED CMOS USING FULLY SELF-ALIGNED METALLIZATION

Research Project

Project/Area Number 08455157
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionTOHOKU UNIVERSITY

Principal Investigator

YOKOYAMA Michio  Tohoku Univ., Res.Inst.Elect.Commun., Research Associate, 電気通信研究所, 助手 (40261573)

Co-Investigator(Kenkyū-buntansha) MASU Kazuya  Tohoku Univ., Res.Inst.Elect.Commun., Associated Professor, 電気通信研究所, 助教授 (20157192)
TSUBOUCHI Kazuo  Tohoku Univ., Res.Inst.Elect.Commun., Professor, 電気通信研究所, 教授 (30006283)
Project Period (FY) 1996 – 1998
KeywordsSelf-Aligned Process / Metallization / Selective Al-CVD / Parasitic resistances / Silicide / Self-aligned barrier layer / RF-CMOS / GHz CMOS amplifier
Research Abstract

In sub-0.1um MOSFETs, interconnect parasitics are drastically limiting the performance improvement. MOSFETs with wide gate width are essentially required for an application to high current-drivability devices such as word-line drivers, gate array devices and analog RF devices. In this work, in order to reduce the parasitic resistances, fully-self-aligned-metallization (FSAM) MOSFET using conventional salicide and selective Al-CVD techniques are proposed and investigated.
FSAM technology features ; (1) low contact resistivity of TiSi_2/Si, (2) self-aligned barrier layer formed by plasma nitridation of TiSi_2 surface, and (3) low sheet resistance of CVD-Al layer. At first, we have developed a self-aligned barrier layer formation method using N2 plasma nitridation of conventional silicided surface. It is confirmed that the 10-nm nitrided barrier layer is Ti-Si-N ternary amorphous layer. Furthermore, it is found that the Ti-Si-N layer acts as a diffusion barrier even after the 450゚C thermal treatment.
On the self-aligned barrier layer, aluminum films are successfully deposited in the same process chamber without breaking the vacuum. It is found that the aluminum films are selectively deposited on the conductive barrier layer.
For an application to analog RF-CMOS, high-frequency performance of wide-gate FSAM MOSFETs has been evaluated using RF simulation. Simulation results have shown that a transition frequency f_T of FSAM devices increases even below 0.2um gate length, while that of conventional silicide devices decrease with shrinkage of gate length down to 0.2um because of high parasitic resistances.
Furthermore, circuit design of RF-CMOS power amplifier for mobile phone has been investigated, and GHz-band high-efficiency CMOS push-pull amplifier has been proposed.

  • Research Products

    (30 results)

All Other

All Publications (30 results)

  • [Publications] H.Matsuhashi: "Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Matallization Metal-Oxide-Semiconductor Field-Effect-Transistor" Jpn.J.Appl.Phys.37. 3264-3267 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] C.-H.Lee: "Crystallographic Structure and Contact Resistance of Self-Aligned Nitrided Barrier Layers on TiSi2 for Fully Self-Aligned Metallization MOSFETs" Abstracts of Advanced Metallization and Interconnect Systems for ULSI Applications in 1998, Colorad Springs. 11-12 (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Matsuhashi: "Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Matallization MOSFET" Ext.Abst.1997 Int.conf.Solid.state Device and Materials. 124-125 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Matsuhashi: "Superiority of DMAH to DMEAA for Al CVD Technology" Abstracts of Advanced Metallization and Interconnect Systemsr for ULSI Applications in 1997,San Diego. 205-210 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Yokoyama: "Reduction of Parasitic Resistances in Wide-Gate Fully-Self-Aligned-Metallization(FSAM)MOSFET" Abstracts of Advanced Metallization and Interconnect Systems for ULSI Applications in 1997,San Diego. 185-190 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Matsuhashi: "Mirror-Like Surface Morphology of CVD-Al on TiN by ClF3 Pretreatment" Advanced Metallization and Interconnect Systems for ULSI Applications in 1995. 667-668 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Masu: "Multilevel Metallization Based on Al CVD" Digest of 1996 Symposium on VLSI Technology. 44-45 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Matsuhashi: "Self-Aligned Barrier Layer Formation for Fully-Selfaligned-Metallization MOSFET" Advanced Metallization and Interconnect Systems for ULSI Applications in 1996. 253-256 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.-H.Chung: "Fluorine Termination Effect on Al CVD" Advenced Metallization and Interconnect Systems for ULSI Applications in 1996. 43-49 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Matsuhashi, et al.: "Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Alligned Metal-Semiconductor Field-Effect-Transistor" Jpn.J.Appl.Phys.Vol.37-6A. 3264-3267 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.-H.Lee, et al.: "Crystallographic Structure and Contact Resistance of Self-Aligned Nitrided Barrier-Layer on TiSi2 for Fully Self-Aligned Metallization MOSFET" Advanced Metallization and Interconnect Systems for ULSI Applications in 1998 : US Session, Colorado, Oct.8. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Matsuhashi, et al.: "Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization MOSFET" Ext.Abst.1997 Int.Conf.Solid State Device and Materials, Hamamatsu. 124-125 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Yokoyama, et al.: "Reduction of parasitic resistances in wide-gate fully-self-aligned-metallization (FSAM) MOSFET" Advanced Metallization and Interconnect Systems for ULSI Applications in 1997 : US Session, San Diego, Oct.1. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Masu, et al.: "Multilevel Metallization Based on Al CVD" Digest of Technical Papers 1996 Symp.on VLSI Technology, Honolulu. 44-45 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Matsuhashi, et al.: "Self-Aligned Barrier Layer Formation for Fully Self-Aligned Metallization MOSFET" Proc.of Advanced Metallization and Interconnect Systems for ULSI Applications in 1996, Boston. (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.-H.Lee, et al.: "Self-align formation of barrier layer for Fully Self-Aligned Metallization MOSFET" IEICE Technical Report. SDM98-127 (1998)

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      「研究成果報告書概要(欧文)」より
  • [Publications] M.Yokoyama, et al.: "Miniaturized MOSFET with Fully-Self-Aligned Metallization for GHz-band Power Amplifier" IEICE Technical Report. SDM98-130 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Yokoyama, et al.: "Reduction of Parasitic Resistances in FSAM-MOSFET" IEICE Technical Report. SDM97-96 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Gotoh, et al.: "Fully Self-aligned Metallization MOSFET using selective Al CVD technology" IEICE Technical Report. SDM96-135 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Yokoyama, et al.: "High Efficiency RF Power MOSFET with Fully Self-Aligned Metallization technique by using Selective Al-CVD" Extended Abstracts (The 59th Autumn Meeting, 1998) ; The Japan Society of Applied Physics. 16p-p10-13.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Nishimura, et al.: "The Improvement of Deposition Rate for Al-CVD Using Direct Liquid Injection System" Extended Abstracts (The 46th Spring Meeting, 1999) ; The Japan Society of Applied Physics and Related Societies. 29pZQ-5.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Yokoyama, et al.: "Fabrication of Silicon Analog RF-CMOS Devices" Extended Abstracts (The 46th Spring Meeting, 1999) ; The Japan Society of Applied Physics and Related Societies. 31aZM-3.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Morimoto, et al.: "High Frequency Characteristics of MOSFETs with Fully Self Aligned Metallization Process" Extended Abstracts (The 58th Autumn Meeting, 1997) ; The Japan Society of Applied Physics. 3p-G-12.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.-H.Lee, et al.: "Self-align formation of barrier layer for Fully Self-Aligned Metallization MOSFET" Extended Abstracts (The 45th Spring Meeting, 1998) ; The Japan Society of Applied Physics and Related Societies. 29a-N-3.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] R.Tajima, et al.: "Analysis of Parasitic Resistance of Fully Self-Aligned Metallization MOSFET" Extended Abstracts (The 57th Autumn Meeting, 1996) ; The Japan Society of Applied Physics. 9a-N-7.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Gotoh, et al.: "ClF3 pre-cleaning in Al-CVD (V)" Extended Abstracts (The 57th Autumn Meeting, 1996) ; The Japan Society of Applied Physics. 8a-N-5.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Matsuhashi, et al.: "Self-align formation of barrier layer for Fully Self-Aligned Metallization MOSFET" Extended Abstracts (The 57th Autumn Meeting, 1996) ; The Japan Society of Applied Physics. 9a-N-6.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Masu, et al.: "Surface reaction of Al CVD" Extended Abstracts (The 57th Autumn Meeting, 1996) ; The Japan Society of Applied Physics. 8pQ-2.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] C.-H.Lee, et al.: "Self-align formation of barrier layer for Fully Self-Aligned Metallization MOSFET" Extended Abstracts (The 44th Spring Meeting, 1997) ; The Japan Society of Applied Physics and Related Societies. 28a-PB-22.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Matsuhashi, et al.: "Self-align formation of barrier layer for Fully Self-Aligned Metallization MOSFET" Extended Abstracts (The 44th Spring Meeting, 1997) ; The Japan Society of Applied Physics and Related Societies. 28a-PB-23.

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-12-08  

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