1996 Fiscal Year Final Research Report Summary
Fabrication of new type transistor using metal/metaloxide/metal tunneling junction
| Project/Area Number |
08455163
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | Japan Advanced Institute of Science and Technology, Hokuriku |
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Principal Investigator |
MATSUMURA Hideki Japan Advanced Institute of Science and Technology, Hokuriku, School of Materials Science, Professor, 材料科学研究科, 教授 (90111682)
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| Co-Investigator(Kenkyū-buntansha) |
MASUDA Atsushi Japan Advanced Institute of Science and Technology, Hokuriku, School of Material, 材料科学研究科, 助手 (30283154)
IZUMI Akira Japan Advanced Institute of Science and Technology, Hokuriku, School of Material, 材料科学研究科, 助手 (30223043)
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| Project Period (FY) |
1996
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| Keywords | super-micro-technology / nano-technology / MITT / Ti / TiOx / anodic oxidation |
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| Research Abstract |
A new micro transistor (metal/insulator tunnel transisor ; MITT) in which tunnel currents are controlled by a gate electrode has been already proposed. This work is to present new micro-technology to realize such micro-transistor, MITT.In the technology, nano-meter-thick TiOx grown laterally at the edge of titanium thin film is utilized to draw patterns in a mask. Formation of metal/insulator/metal structure with only 10 nm-width insulator is succeeded by this new technology.
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