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1997 Fiscal Year Final Research Report Summary

Developement of a new modulation spectroscopy by exciting polarized light

Research Project

Project/Area Number 08555006
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Applied materials science/Crystal engineering
Research InstitutionKobe University

Principal Investigator

NISHINO Taneo  Kobe University, Faculty of Engineering, Professor, 工学部, 教授 (60029452)

Co-Investigator(Kenkyū-buntansha) SAKAGUCHI Harunori  Hitachi Cable, Ltd., Advance Research Center Laboratory, Senior Researcher, アドバースリサーチセンタ, 主任研究員
KITA Takashi  Kobe University, Faculty of Engineering, Research Associate, 工学部, 助手 (10221186)
Project Period (FY) 1996 – 1997
KeywordsModulation Spectroscopy / Reflectance difference / Semiconductor Surface / Electronic States / 半導体量子構造
Research Abstract

We developed a new modulation technique for semiconductor quantum structures by using polarization anisotropy. We focus our attention on reflectance signal modulated by polarized light. The summary of this research are followed. (1) In order to develope an analysis method, we theoretically investigated dielectric functions at semiconductor surfaces. (2) We developed a new in-situ characterization system to observe electronic states during the crystal growth. A probe light irradiate the sample surface, and the polarization modulated signal was detected. It was found that the incident angle of the probe light is important to observe the surface electronic states. (3) An anisotropic character was observed for the p and s waves of the probe light, which reflect the anisotropy of the dielectric function coming from surface morphology and surface reconstructions.This realizes a new sensitive detection of electronic states localized at the surface. By using this technique, we can observe the electronic states changed by the abrupt surface and adsorped atoms. (4) Our developed system can measure a modulation spectrum and its dynamic character during the growth. This technique promises a practical use of the in-situ modulation spectroscopy.

  • Research Products

    (18 results)

All Other

All Publications (18 results)

  • [Publications] K.Yamashita, T.Kita, H.Nakayama, T.Nishino: "Photaliminescence from mestable state in long-rang ordered (Al_<0.5>Ga_<0.5>)_<0.51>Ino.49P" Physical Review B. vol.55 No.7. 4411-4416 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Yamashita, T.Kita, H.Nakayama, T.Nishino: "Pole of carrier localization in pnergy up-conversion at (Al_<0.5>Ga_<0.5>)_<0.5> Ino49P/GaAs heterointerface" Proc.Electronic Materials Symposium. 16th. 101-103 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Nakayama, A.Furuichi, T.Kita, T.Nishino: "Stochastic growth theory of molecular beam epitaxy with atom correlation effects : Ammte-carlo master equation method" Applied Sarface Science. vol.113-114. 631-637 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Yamashita, T.Kita, T.Nishino: "High elliciaicy up-conversion induced by carrier localization in ordered (Al_<0.5>Ga_<0.5>)_<0.5> In_<0.5>P/GaAs hetero interface" Proc.Electronic Materials Conference. 39th. 35-35 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.Tsukada, M.Gotoda, T.Isu, M.Nunoshita, T.Nishino: "Dynamical controle of quantum funmeling due to ac stark shit in an asymmetric caupled quantum dot" Physical Review B. Vol.56 No.15. 9231-1234 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Nakayama, T.Kita, T.Nishino: "Advances in the Understanding of Crystal Growth Mechanism" Elsevier Science, 21 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Yamashita, T.Kita, H.Nakayama, and T.Nishino: "Ordering effects on photoluminescence properties of indirect-gap AlGaInP" 15th Electronic Materials Symposium. 169-170 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Ishitani, S.Minagawa, T.Kita, T.Nishino, H.Yaguchi, and Y.Shiraki: "The Optical Process in AIInP/GaInP/AIInP Quantum Wells" J.Appl.Phys.Vol.80, No.8. 4592-4598 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Kita and T.Nishino: "Electron-Beam Electroreflectance Spectroscopy of Semiconductors" Jpn.J.Appl.Phys.Vol.35, No.10. 5367-5373 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] G.P.Wei, W.B.Wu, T.Kita, H.Nakayama, T.Nishino, W.Ma, H.Okamoto, M.Okuyama, and Y.Hamakawa: "Hydrogenerated Amorphous Silicon/Crystalline Silicon Double Heterojunction X-Ray Sensor" Jpn.J.Appl.Phys.Vol.35, No.10. 5342-5345 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Yamashita, T.Kita, H.Nakayama, and T.Nishino: "Up-Converted Photoluminescene from Long-Range Ordered (Al_<0.5>Ga_<0.5>)_<0.51>In_<0.49>P on GaAs substrates" Proc.The 2nd Asia Symposium on Condensed Matter Photophysics Nara. 89-92 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Kita, K.Yamashita, and T.Nishino: "Higher-Interband Electroreflectance of Long-Range Ordered Ga_<0.5>In_<0.5>P" Phys.Rev.B. Vol.54, No.23. 16714-16718 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Yamashita, T.Kita, H.Nakayama, and T.Nishino: "Photoluminescence from Metastable States in Long-range Ordered (Al_<0.5>Ga_<0.5>)_<0.51>In_<0.49>P" Phys.Rev.B. Vol.55, No.7. 4411-4416 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Yamashita, T.Kita, H.Nakayama, and T.Nishino: "Role of Carrier Locarization in Energy Up-Conversion at (Al_<0.5>Ga_<0.5>)_<0.51>In_<0.49>P/GaAs Heterointerface" 16th Electronic Materials Symposium. 101-103 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Nakayama, A.Furuichi, T.Kita, and T.Nishino: "Stochastic Growth theory of Molecular Beam Epitaxy wit Atom Correlation Effects : A Monte-Carlo Master Equiation Method" Applied Surface Science. Vol.113/114. 631-637 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Yamashita, T.Kita, and T.Nishino: "High Efficiency Energy Up-Conversion Induced by Carrier Localization in Ordered (Al_<0.5>Ga_<0.5>)_<0.51>In_<0.49>P/GaAs Heterointerface" 39th Electronic Materials Conference, Colorado. 35 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Tsukada, m.Gotoda, T.Isu, M.Nunoshita, and T.Nishino: "Dynamic control of quantum tunneling due to ac Stark shift in as asymmeteric coupled quantum dot" Phys.Rev.B. Vol.56, No.15. 9231-9234 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Nakayama, T.Kita, and T.Nishino: "Atomic Ordering in Epitaxial Alloy Semiconductors : from the Discoveries to the Physical Understanding", in Advances in the Understanding of Crystal Growthe. Elsevier, Amsterdam, 163-183 (1997)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-03-16  

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