1997 Fiscal Year Final Research Report Summary
A new approach to the device processing by means of supersonic molecular and radical beams
| Project/Area Number |
08555008
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
表面界面物性
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| Research Institution | KYUSHU INSTITUTE OF TECHNOLOGY |
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Principal Investigator |
NAMIKI Akira Kyushu Institute of Technology, Faculty of Engineering, Professor, 工学部, 教授 (40126941)
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| Co-Investigator(Kenkyū-buntansha) |
MIYAKE Tatsuya Hitachi co., 基礎研究所, 研究員
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| Project Period (FY) |
1996 – 1997
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| Keywords | supersonic beam / silicon surface reaction / atomic hydrogen beam / H abstraction |
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| Research Abstract |
Our aim of the project is to investigate the dynamics of the reactions of (1) : Cl_2 dissociatve reaction and (2) : H-induced H abstraction reaction on the Si (100) surface. In this project, we found that the supersonic Cl_2 and atomic hydrogen beams are both very useful and potentially high for the Si device processing such as etching and cleaning of surfaces. We obtained following results ;
(1) : Cl_2 dissociatve reaction on the Si (100).
Initial sticking probabilities of Cl_2 on the Si (100) surface were measured as a function of surface temperature and incident energy. Two sticking channels were clalified ; one is the precursor mediated process and the other is the direct stickiig process. The former process is dominat it low incident energy below 0.05eV,and the latter is at high incident energy above 0.1eV.The data were analyzed with a kinetic model, and the relevant reaction potential parameters were determined.
(2) : Angular distribution of HD produced in the H abstraction reaction of chemisorbed H on Si (100)
In order to investigate the abstraction reaction dyanamics of chemisorbed H by incident-D atoms, the angular distribution of products HD moleculeres were measured. It was found that the distribution peak appeared around 20ﾟ in the specular dirction with respect to the surafce normal. This was compared with the associative thermal desorption of hydrogen which showed the angualr distribution peak towards the surface normal. Therefore, we concluded that the H-induced abstarction reaction takes place following the Eley-Rideal mechanism.
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