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1997 Fiscal Year Final Research Report Summary

Developement of new hydrogen analysis method by combining classical methods and its application to the H/Si systems

Research Project

Project/Area Number 08555009
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section展開研究
Research Field 表面界面物性
Research InstitutionOsaka University

Principal Investigator

OURA Kenjiro  Dept.of Eng., Osaka University, Professor, 工学部, 教授 (60029288)

Co-Investigator(Kenkyū-buntansha) ISHIDA Hideyuki  To-ray Research, Researcher, 構造化学研究部, 部長(研究員)
ITOH Takashi  Fujitsu Co., Researcher, 半導体研究部, 部長(研究員)
WATAMORI Michio  Dept.of Eng., Osaka University, Research Associate, 工学部, 助手 (80222412)
KATAYAMA Mitsuhiro  Dept.of Eng., Osaka University, Lectuerer, 工学部, 講師 (70185817)
Project Period (FY) 1996 – 1997
KeywordsSurface Hydrogen / Interface Hydrogen / Ion Beam Analysis / Sputtering / multi-hydrogen analysis
Research Abstract

We have reported that epitaxial growth mode of thin metallic films on the Hydrogen-terminated Si surfaces were slightly different from that on the clean Si surfaces. Our subject on this research project supported by a Grant-in-Aid for Scientific Research is to develop a new hydrogen analysis technique by combined the classical methods and apply to the real hydrogen-silicon systems. The new findings are as follows.
(1) Combining the low energy electron diffraction (LEED) and the low energy ion scattering (ISS) containing detection of the absolute volume of hydrogen using the recoil detection system causes the powerful tool to investigate the hydrogen induced epitaxy. We also used the STM for the ex-situ observation of surface morphology.
(2) Not only MBE methods but also sputtering methods were applied to make metal epitaxial films on Si substrates to investigate the role of hydrogen on the films.
(3) Initial stage of 2-dimensional superlattice induced by specific materials such as Ag, Pb and In changes to 3-dimensional intrinsic cluster growth after the Hydrogen termination.
These results cause the key of better understanding of modification of heteroepitaxy by the Hydrogen termination.

  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] K.Oura 他4名: "Atomic-hydrogen-induced Ag cluster formation on Si(III)-√<3>×√<3>-Ag surface observed by scanning Tunneling microscopy" J.Vac.Sci.Technol.B14. 988-991 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Oura 他4名: "Thin-film growth mode analysis by low energy ion scattering" Surface Science. 363. 161-165 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Watamori 他3名: "A new method for the detection of native oxide on Si with combined use of ^<16>O(αα)^<16>O resonance and channeling" Applied Surface Science. 113/114. 403-407 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Ohba 他5名: "STM observation of Ag clustering on hydrogen-terminated Si(100) surfaces" Applied Surface Science. 121/122. 191-194 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.A.Saranin 他8名: "Structural model for the Si(III)-4×1-In reconstruction" Physical Review B. 56. 1017-1020 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.A.Saranin 他6名: "STM tip-induced diffusion of In atoms on the Si(III)√<3>×√<3>-In surface" Physical Review B. 56. 7449-7454 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Oura et.al.: "Atomic-Hydrogen-Induced Ag Cluster Formation on Si (111)-ROO<3>*ROO<3>-Ag Surface Observed by Scanning Tunneling Microscopy" Journal of Vacuum, Science and Technology. B14. 988-991 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Oura et.al.: "Thin-film growth mode analysis by low energy ion scattering" Surface Sci.363. 161-165 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Waramori et.al.: "A new method for the detection of native oxide on Si with combined used of ^<16>O (alpha, alpha) ^<16>O resonance and channeling" Applied Surface Science. 113/114. 403-407 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Ohba et.al.: "STM observation of Ag clustering on hydrogen-terminated Si (100) surfaces" Applied Surface Science. 121/122. 191-194 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.A.Saranin et.al.: "Atructural model for the Si (111)-4*1-In reconstruction" Physical Review. B56. 1017-1020 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.A.Saranin et.al.: "STM tip-induced diffusion of In atoms on the Si (111)-ROO<3>*ROO<3>-In surface" Physical Review. B56. 7449-7454 (1997)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-03-16  

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