1997 Fiscal Year Final Research Report Summary
Developement of new hydrogen analysis method by combining classical methods and its application to the H/Si systems
| Project/Area Number |
08555009
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
表面界面物性
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| Research Institution | Osaka University |
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Principal Investigator |
OURA Kenjiro Dept.of Eng., Osaka University, Professor, 工学部, 教授 (60029288)
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| Co-Investigator(Kenkyū-buntansha) |
ISHIDA Hideyuki To-ray Research, Researcher, 構造化学研究部, 部長(研究員)
ITOH Takashi Fujitsu Co., Researcher, 半導体研究部, 部長(研究員)
WATAMORI Michio Dept.of Eng., Osaka University, Research Associate, 工学部, 助手 (80222412)
KATAYAMA Mitsuhiro Dept.of Eng., Osaka University, Lectuerer, 工学部, 講師 (70185817)
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| Project Period (FY) |
1996 – 1997
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| Keywords | Surface Hydrogen / Interface Hydrogen / Ion Beam Analysis / Sputtering / multi-hydrogen analysis |
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| Research Abstract |
We have reported that epitaxial growth mode of thin metallic films on the Hydrogen-terminated Si surfaces were slightly different from that on the clean Si surfaces. Our subject on this research project supported by a Grant-in-Aid for Scientific Research is to develop a new hydrogen analysis technique by combined the classical methods and apply to the real hydrogen-silicon systems. The new findings are as follows.
(1) Combining the low energy electron diffraction (LEED) and the low energy ion scattering (ISS) containing detection of the absolute volume of hydrogen using the recoil detection system causes the powerful tool to investigate the hydrogen induced epitaxy. We also used the STM for the ex-situ observation of surface morphology.
(2) Not only MBE methods but also sputtering methods were applied to make metal epitaxial films on Si substrates to investigate the role of hydrogen on the films.
(3) Initial stage of 2-dimensional superlattice induced by specific materials such as Ag, Pb and In changes to 3-dimensional intrinsic cluster growth after the Hydrogen termination.
These results cause the key of better understanding of modification of heteroepitaxy by the Hydrogen termination.
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