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1997 Fiscal Year Final Research Report Summary

Topographic analyzer for electronic structures of semiconductors

Research Project

Project/Area Number 08555018
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Applied physics, general
Research InstitutionKYOTO INSTITUTE OF TECHNOLOGY (1997)
Kyoto University (1996)

Principal Investigator

SARAIE Junji  Kyoto Inst.Tech., Faculty of Engneering & Design, Professor, 工芸学部, 教授 (90026154)

Co-Investigator(Kenkyū-buntansha) MATSUMURA Nobuo  Kyoto Inst.Tech., Faculty of Engneering & Design, Research associate, 工芸学部, 助手 (60107357)
YOSHIMOTO Masahiro  Kyoto Inst.Tech., Faculty of Engneering & Design, Associate professor, 工芸学部, 助教授 (20210776)
Project Period (FY) 1996 – 1997
Keywordsphotoluminescence / high spatial resolution / low temperature / confocal microscope / electronic structure / piezo actuator / photoluminescence image / nano structure
Research Abstract

In this project, a novel analyzer has been developed to obtain an image of photoluminescence (PL), optical properties, or optoelectronic properties with a spatial resolution close to the diffraction limit at a low temperature. The analyzer consists of an objective with a high magnification, a novel developed thermal isolation, and an anti-vibration mechamism. A sample is scanned with piezo actuators to obtain the signal image. The sample is cooled down by a cold head with liquid He. A clear reflectance image of SiO_2/Si with a microstructure was obtained at 15 K with a spatial resolution of 0.8 mum. The spatial resolution closes to the theoretical limit determined with the wavelength of the light (632nm) and the numerical aperture of the objective (NA=0.09).
GaAs_<1-x>P_x (0.2<x<0.7) was grown on a Si substrate with a GaP buffer layr by metalorganic molecular beam epitaxy. The epilayr showed a spatial fluctuation of composition x. Using spatially reesolved PL,the dependence of PL emitted from GAAs_<1-x>P_x on composition x was precisely characterized. Peaks observed in PL of GaAs_<1-x>P_x was attributed to donor-acceptor pairs related to vacancies in epilayrs based on the results of the spatially resolved PL.
The topographic analyzer enables to investigate electronic structures of micro- and nano-structure of semiconductors with a higher sensitivity than that of an optical probe microscope. The topographic analyzer will open a new approach to study semiconductor materials and devices.

  • Research Products

    (4 results)

All Other

All Publications (4 results)

  • [Publications] Masahiro Yoshimoto: "Growth of Iuminescent GaAsP on Si substrate by metalorganic moleculer beam epitaxy using GaP buffer layer" Japanese J. Applied Physics. 37(印刷中). (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Masahiro Yoshimoto: "GaN Growth on sapphire and 6H-SiC by metalorganic molecular beam epitaxy" J.Crystal Growth. (印刷中). (1998)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Masahiro Yoshimoto, Yasuhiro Watanabe, Hiroyuki Matsunami: "Growth of luminescent GaAsP on Si substrate by metalorganic molecular beam epitaxy using Gap buffer layr" Japanese J.Applied Physics. 37, (in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Masahiro Yoshimoto, Akira Hatanaka, Hiroyuki Matsunami: "GaN Growth on sapphire and 6H-SiC by metalotganic molecular beam epitaxy" J.Crystal Growth. (in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-03-16  

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