1997 Fiscal Year Final Research Report Summary
Topographic analyzer for electronic structures of semiconductors
| Project/Area Number |
08555018
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Applied physics, general
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| Research Institution | KYOTO INSTITUTE OF TECHNOLOGY (1997)
Kyoto University (1996) |
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Principal Investigator |
SARAIE Junji Kyoto Inst.Tech., Faculty of Engneering & Design, Professor, 工芸学部, 教授 (90026154)
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| Co-Investigator(Kenkyū-buntansha) |
MATSUMURA Nobuo Kyoto Inst.Tech., Faculty of Engneering & Design, Research associate, 工芸学部, 助手 (60107357)
YOSHIMOTO Masahiro Kyoto Inst.Tech., Faculty of Engneering & Design, Associate professor, 工芸学部, 助教授 (20210776)
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| Project Period (FY) |
1996 – 1997
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| Keywords | photoluminescence / high spatial resolution / low temperature / confocal microscope / electronic structure / piezo actuator / photoluminescence image / nano structure |
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| Research Abstract |
In this project, a novel analyzer has been developed to obtain an image of photoluminescence (PL), optical properties, or optoelectronic properties with a spatial resolution close to the diffraction limit at a low temperature. The analyzer consists of an objective with a high magnification, a novel developed thermal isolation, and an anti-vibration mechamism. A sample is scanned with piezo actuators to obtain the signal image. The sample is cooled down by a cold head with liquid He. A clear reflectance image of SiO_2/Si with a microstructure was obtained at 15 K with a spatial resolution of 0.8 mum. The spatial resolution closes to the theoretical limit determined with the wavelength of the light (632nm) and the numerical aperture of the objective (NA=0.09).
GaAs_<1-x>P_x (0.2<x<0.7) was grown on a Si substrate with a GaP buffer layr by metalorganic molecular beam epitaxy. The epilayr showed a spatial fluctuation of composition x. Using spatially reesolved PL,the dependence of PL emitted from GAAs_<1-x>P_x on composition x was precisely characterized. Peaks observed in PL of GaAs_<1-x>P_x was attributed to donor-acceptor pairs related to vacancies in epilayrs based on the results of the spatially resolved PL.
The topographic analyzer enables to investigate electronic structures of micro- and nano-structure of semiconductors with a higher sensitivity than that of an optical probe microscope. The topographic analyzer will open a new approach to study semiconductor materials and devices.
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