1996 Fiscal Year Annual Research Report

超高真空非接触・非破壊容量一電圧測定システムの開発

Research Project

Project/Area Number	08555072
Section	試験
Research Institution	Hokkaido University
Principal Investigator	長谷川英機北海道大学, 工学部, 教授 (60001781)
Co-Investigator(Kenkyū-buntansha)	坂井高正大日本スクリーン製造(株), 電子機器事業本部, 課長(研究職) 藤倉序章北海道大学, 工学部, 助手 (70271640) 橋詰保北海道大学, 工学部, 助教授 (80149898) 福井孝志量子界面エレクトロニクス研究センター, 教授 (30240641)
Keywords	非接触C-V / 超高真空一貫システム / 表面・界面準位 / 表面プロセス / 半導体自由表面 / 極薄絶縁膜 / トンネル絶縁膜 / 原子スケール表面制御
Research Abstract	本研究の目的は、超高真空中や各種プロセス雰囲気で、半導体の伝導形、不純物プロフィール、表面準位分布、表面近傍のバルク局在準位分布を測定することを可能とする、「超高真空非接触・非破壊容量一電圧(C-V)測定システム」を設計・試作・評価し、表面再構成や表面緩和した半導体表面、原子レベルでの処理をした表面、極薄絶縁膜をもつ表面などの電子物性評価に適用することである。得られた主要な成果を以下にまとめる。 1)「超高真空非接触・非破壊容量一電圧(C-V)測定システム」の4つの主要構成部の設計・試作を、次に示すように行った。 (1)試料搬送機構を含む超高真空チャンバを製作した。 (2)C-V測定用フィールドプレートと試料表面を100〜300nmの一定距離に維持するために、超高真空対応のピエゾ機構を備えた平行維持電極制御部を設計・試作した。 (3)光学手法によりフィールドプレートと試料表面間の超高真空ギャップ測定部を設計・試作した。 (4)配線容量の補正機構を備えた容量測定部およびデータ解析部を製作した。 2)現有の大気中非接触・非破壊C-V測定システムと試作した超高真空非接触・非破壊C-V測定システムを併用して、水素終端処理シリコン表面、および400℃以下の低温で酸化した極薄絶縁膜を有するシリコン表面の非破壊C-V測定を行った結果、フッ化アンモニウム溶液処理により形成した水素終端Si表面には、価電子帯から0.7eV付近の位置に高密度の離散的な準位が発生し、フェルミ準位がビンニングされること、および低温プロセス(化学酸化法、低温熱酸化法)で形成した極薄酸化膜/Si界面は、いずれもGaAsMIS構造に類似したC-V特性を示し、狭いU字形の高密度界面準位分布を有し、フェルミレベルは電荷中性点付近に強くピンニングされている、ことが明らかとなった。(JJAP35巻2号に論文発表) 3)電子サイクロントロン励起N_2プラズマによる酸窒化によって、界面準位密度が1_x10^<11>cm-^2eV^<-1>程度の良好な界面特性を有する、極薄酸窒化膜/Si界面が、400℃の低温で形成できることが示された。

Research Products
(35 results)

All Other

All Publications (35 results)

[Publications] T. Saitou: "″Determination of Built-in Electric Field Strength in InP/n^+- InP Structures Using Photoellipsometry″" Japanese Journal of Applioed Physics. 35. 1696-1700 (1996)
[Publications] B. W. Yang: "″Properties of InAs_xP_<1-x> Layer Formed by P-As Exchange Reaction on (001) InP Surface Exposed to As_4 Beam″" Journal of Electronic Materials. 25. 379-384 (1996)
[Publications] H. Fujikura: "″Fabrication of InP-Based InGaAs Ridge Quantum Wires Utilizimg Selective Moleculat Beam Epitaxial Growth on (311) A Facets″" Jounal of Electronic Materials. 25. 619-625 (1996)
[Publications] S. Suzuki: "″A Novel Insulated Gate Technology for InGaAs High Electron Mobility Transistors Using Silicon Interlayer Based Passivation Technique″" Jounal of Electronic Materials. 25. 649-656 (1996)
[Publications] B. X. Yang: "″Scanning Tunneling Microscope study of (001) InP Surface Prepared by Gas Source Molecular Beam Epitaxy″" Japanese Journal of Applied Physics. 35. 1267-1272 (1996)
[Publications] H. Fujikura: "″Photoluminescence and Cathodoluminescence Investigation of Optical Properties of InP-Based InGaAs Ridge Quantum Wires Formed by Selective Molective Beam Epitaxy″" Japanese Journal of Applied Physics. 35. 1333-1339 (1996)
[Publications] S. Kasai: "″Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers″" Japanese Journal of Applied Physics,. 35. 1340-1347 (1996)
[Publications] S. Kasai: "″Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates″" Japanese Journal of Applied Physics. 35. 6652-6658 (1996)
[Publications] S. Uno: "″0.86eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs″" Japanese Journal of Applied Physics. 35. 1258-1263 (1996)
[Publications] S. Koyanagi: "″Contactless and Nondestructive Characterization of Silicon Surfaces by Capacitance-Voltage and Photoluminescence Methods″" Japanese Journal of Applied Physics. 35. 946-953 (1996)
[Publications] K. Jinushi: "″Novel GaAs-Based Single Electron Transistors with Schottky In-Plane Gates Operating up to 20K″" Japanese Journal of Applied Physics. 35. 1132-1139 (1996)
[Publications] H. Fujikura: "″Surface Passivation of In_<0.53>Ga_<0.47>As Ridge Quantum Wires Using Silicon Interfase Control Layers″" Journal of Vacuum Science and Technology. B-14. 2888-2894 (1996)
[Publications] T. Hashizume: "″Contactless Capacitance-Voltage and Photoluminescence Characterization of Ultrathin Oxide-Silicon Interfaces Formed on Hydrogen Terminated (III) Surfaces″" J. Vac. Sic. Technol.B-14. 2872-2881 (1996)
[Publications] T. Hashizume: "″Quantum Transport in A Schottky In-Plane-Gate Controlled' GaAs/AlGaAs Quantum Well Wires″" Phisica B. 227. 42-45 (1996)
[Publications] H. Tomozawa: "″Design and Fabrication of GaAs/AlGaAs Single Electron Transistors Based on In-Plane Schottky Gate Control of 2DEG″" Phisica B. 227. 112-115 (1996)
[Publications] S. Shiobara: "″Deep Level and Conduction Mechanism in Low-Temperature GaAs Grown by Molecular Beam Epitaxy″" Japanese Journal of Applied Physics. 35. 1159-1164 (1996)
[Publications] 長谷川英機: "化合物半導体量子細線および量子ドットの製作" 光学. 25(8). 448-455 (1996)
[Publications] 長谷川英機: "化合物半導体量子構造表面のSi超薄膜界面制御層によるバッシベーション" 表面化学. 17(9). 567-574 (1996)
[Publications] 長谷川英機: "「InP系化合物半導体材料およびデバイスの新展開」" 「応用物理」. 65(2). 108-118 (1996)
[Publications] M. Araki: "Formation of InGaAs/InAlAs Quantum Wires and Dots with Extremely Smooth Facets on Mesa-Patterned (001) InP Substrates by Selective Molecular Beam Enitaxy″" Jpn. J. Appl. Phys.36(3)(印刷中). (1997)
[Publications] H. Fujikura: "″Excitation Power Dependent photoluminescence Behavior in Etched Quantum Wires Having Silicon Interlayer-Based Edge Passivation and Its Interpretation″," Jpn. J. Appl. Phys. 36(3)(印刷中). (1997)
[Publications] S. Kasai: "″Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas" Jpn. J. Appl. Phys.36(3)(印刷中). (1997)
[Publications] H. Okada: "Observation of Coulomb Blockade Type Conductance Oscvillations up to 50K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates," Jpn. J. Appl. Phys.36(3)(印刷中). (1997)
[Publications] T. Sato: "Large Schottky Barrier Heights on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process." Jpn. J. Appl. Phys.36(3)(印刷中). (1997)
[Publications] K. Ikeya: "Successful Surface passivation of Air-Exposed AlGaAs by a Silicon Interface Control Layer-Based Technique," Jpn. J. Appl. Phys.36(3)(印刷中). (1997)
[Publications] Y. Dohmae: "Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitor Having Silicon Interface Control Layer," Jpn. J. Appl. Phys.36(3)(印刷中). (1997)
[Publications] T. Yoshida: "Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si (III) Surfaces by Contactless Capacitance-Voltage and Photoluminescence Methods," Jpn. J. Appl. Phys.36(3)(印刷中). (1997)
[Publications] H. Hasegawa: "Evolution Mechanism of Nearly-Pinning Platinum/N-Type Indium Phosphide Interface with a High Schottky Barrier Height by In-Situ Electrochemical Process," J. Vac. Sci. Technol.B15(4)(印刷中). (1997)
[Publications] H. Okada: "Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurementa in GaAs and InGaAs Quantum Wires," Jpn. J. Appl. Phys.36(3)(印刷中). (1997)
[Publications] T.Kuboh: "Controlled Formation of Metal-semiconductor Interface to 2DEG Layer by In-Situ Electrochemical Process and Its Application to In-Plane Electron Waveguide Devices" Appl. Sun. Sci.36(3)(印刷中). (1997)
[Publications] K. Iizuka: "Small-Signal Response of Interface States at Passivated InGaAs Surfaces from Low Frefuenies up to Microwave Frequencies," Soild-State Electron.印刷中. (1997)
[Publications] Y. Ishikawa: "Missing-dimer structures and their kink defects on molecular beam epitaxially grown (2×4) reconstructed (001) InP and GaAs surfaces studied by ultrahigh-vacuum scanning tunneling microscopy" Jpn. J. Appl. Phys.36(3)(印刷中). (1997)
[Publications] H. Hasegawa: "Interface-controled Schottky barriers on InP and related materials" Soild-State Electronics. 印刷中. (1997)
[Publications] S. Suzuki: "Fabrication and electrical characterization of InP-based insulated gate power HEMTs using ultrathin Si intefcae control layer" Soild-State Electronics. 印刷中. (1997)
[Publications] M. Kihara: "″Effet of Mis-Orientaition of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy″," Appl. Sur. Sci.印刷中. (1997)

1996 Fiscal Year Annual Research Report

超高真空非接触・非破壊容量一電圧測定システムの開発

Principal Investigator

長谷川 英機 北海道大学, 工学部, 教授 (60001781)

Research Products

[Publications] T. Saitou: "″Determination of Built-in Electric Field Strength in InP/n^+- InP Structures Using Photoellipsometry″" Japanese Journal of Applioed Physics. 35. 1696-1700 (1996)

[Publications] B. W. Yang: "″Properties of InAs_xP_<1-x> Layer Formed by P-As Exchange Reaction on (001) InP Surface Exposed to As_4 Beam″" Journal of Electronic Materials. 25. 379-384 (1996)

[Publications] H. Fujikura: "″Fabrication of InP-Based InGaAs Ridge Quantum Wires Utilizimg Selective Moleculat Beam Epitaxial Growth on (311) A Facets″" Jounal of Electronic Materials. 25. 619-625 (1996)

[Publications] S. Suzuki: "″A Novel Insulated Gate Technology for InGaAs High Electron Mobility Transistors Using Silicon Interlayer Based Passivation Technique″" Jounal of Electronic Materials. 25. 649-656 (1996)

[Publications] B. X. Yang: "″Scanning Tunneling Microscope study of (001) InP Surface Prepared by Gas Source Molecular Beam Epitaxy″" Japanese Journal of Applied Physics. 35. 1267-1272 (1996)

[Publications] H. Fujikura: "″Photoluminescence and Cathodoluminescence Investigation of Optical Properties of InP-Based InGaAs Ridge Quantum Wires Formed by Selective Molective Beam Epitaxy″" Japanese Journal of Applied Physics. 35. 1333-1339 (1996)

[Publications] S. Kasai: "″Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers″" Japanese Journal of Applied Physics,. 35. 1340-1347 (1996)

[Publications] S. Kasai: "″Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates″" Japanese Journal of Applied Physics. 35. 6652-6658 (1996)

[Publications] S. Uno: "″0.86eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs″" Japanese Journal of Applied Physics. 35. 1258-1263 (1996)

[Publications] S. Koyanagi: "″Contactless and Nondestructive Characterization of Silicon Surfaces by Capacitance-Voltage and Photoluminescence Methods″" Japanese Journal of Applied Physics. 35. 946-953 (1996)

[Publications] K. Jinushi: "″Novel GaAs-Based Single Electron Transistors with Schottky In-Plane Gates Operating up to 20K″" Japanese Journal of Applied Physics. 35. 1132-1139 (1996)

[Publications] H. Fujikura: "″Surface Passivation of In_<0.53>Ga_<0.47>As Ridge Quantum Wires Using Silicon Interfase Control Layers″" Journal of Vacuum Science and Technology. B-14. 2888-2894 (1996)

[Publications] T. Hashizume: "″Contactless Capacitance-Voltage and Photoluminescence Characterization of Ultrathin Oxide-Silicon Interfaces Formed on Hydrogen Terminated (III) Surfaces″" J. Vac. Sic. Technol.B-14. 2872-2881 (1996)

[Publications] T. Hashizume: "″Quantum Transport in A Schottky In-Plane-Gate Controlled' GaAs/AlGaAs Quantum Well Wires″" Phisica B. 227. 42-45 (1996)

[Publications] H. Tomozawa: "″Design and Fabrication of GaAs/AlGaAs Single Electron Transistors Based on In-Plane Schottky Gate Control of 2DEG″" Phisica B. 227. 112-115 (1996)

[Publications] S. Shiobara: "″Deep Level and Conduction Mechanism in Low-Temperature GaAs Grown by Molecular Beam Epitaxy″" Japanese Journal of Applied Physics. 35. 1159-1164 (1996)

[Publications] 長谷川英機: "化合物半導体量子細線および量子ドットの製作" 光学. 25(8). 448-455 (1996)

[Publications] 長谷川英機: "化合物半導体量子構造表面のSi超薄膜界面制御層によるバッシベーション" 表面化学. 17(9). 567-574 (1996)

[Publications] 長谷川英機: "「InP系化合物半導体材料およびデバイスの新展開」" 「応用物理」. 65(2). 108-118 (1996)

[Publications] M. Araki: "Formation of InGaAs/InAlAs Quantum Wires and Dots with Extremely Smooth Facets on Mesa-Patterned (001) InP Substrates by Selective Molecular Beam Enitaxy″" Jpn. J. Appl. Phys.36(3)(印刷中). (1997)

[Publications] H. Fujikura: "″Excitation Power Dependent photoluminescence Behavior in Etched Quantum Wires Having Silicon Interlayer-Based Edge Passivation and Its Interpretation″," Jpn. J. Appl. Phys. 36(3)(印刷中). (1997)

[Publications] S. Kasai: "″Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas" Jpn. J. Appl. Phys.36(3)(印刷中). (1997)

[Publications] H. Okada: "Observation of Coulomb Blockade Type Conductance Oscvillations up to 50K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates," Jpn. J. Appl. Phys.36(3)(印刷中). (1997)

[Publications] T. Sato: "Large Schottky Barrier Heights on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process." Jpn. J. Appl. Phys.36(3)(印刷中). (1997)

[Publications] K. Ikeya: "Successful Surface passivation of Air-Exposed AlGaAs by a Silicon Interface Control Layer-Based Technique," Jpn. J. Appl. Phys.36(3)(印刷中). (1997)

[Publications] Y. Dohmae: "Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitor Having Silicon Interface Control Layer," Jpn. J. Appl. Phys.36(3)(印刷中). (1997)

[Publications] T. Yoshida: "Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si (III) Surfaces by Contactless Capacitance-Voltage and Photoluminescence Methods," Jpn. J. Appl. Phys.36(3)(印刷中). (1997)

[Publications] H. Hasegawa: "Evolution Mechanism of Nearly-Pinning Platinum/N-Type Indium Phosphide Interface with a High Schottky Barrier Height by In-Situ Electrochemical Process," J. Vac. Sci. Technol.B15(4)(印刷中). (1997)

[Publications] H. Okada: "Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurementa in GaAs and InGaAs Quantum Wires," Jpn. J. Appl. Phys.36(3)(印刷中). (1997)

[Publications] T.Kuboh: "Controlled Formation of Metal-semiconductor Interface to 2DEG Layer by In-Situ Electrochemical Process and Its Application to In-Plane Electron Waveguide Devices" Appl. Sun. Sci.36(3)(印刷中). (1997)

[Publications] K. Iizuka: "Small-Signal Response of Interface States at Passivated InGaAs Surfaces from Low Frefuenies up to Microwave Frequencies," Soild-State Electron.印刷中. (1997)

[Publications] Y. Ishikawa: "Missing-dimer structures and their kink defects on molecular beam epitaxially grown (2×4) reconstructed (001) InP and GaAs surfaces studied by ultrahigh-vacuum scanning tunneling microscopy" Jpn. J. Appl. Phys.36(3)(印刷中). (1997)

[Publications] H. Hasegawa: "Interface-controled Schottky barriers on InP and related materials" Soild-State Electronics. 印刷中. (1997)

[Publications] S. Suzuki: "Fabrication and electrical characterization of InP-based insulated gate power HEMTs using ultrathin Si intefcae control layer" Soild-State Electronics. 印刷中. (1997)

[Publications] M. Kihara: "″Effet of Mis-Orientaition of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy″," Appl. Sur. Sci.印刷中. (1997)

長谷川英機北海道大学, 工学部, 教授 (60001781)