1997 Fiscal Year Final Research Report Summary
WAVELENGTH CONVERSION MECHANISM IN INFRARED UP CONVERSION LASER
| Project/Area Number |
08650058
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied optics/Quantum optical engineering
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| Research Institution | TOKYO ENGINEERING UNIVERSITY |
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Principal Investigator |
MITA Yoh TOKYO ENGINEERING UNIV., PROFESSOR, 工学部, 教授 (20200040)
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| Co-Investigator(Kenkyū-buntansha) |
YAMAMOTO Hajime TOKYO ENGINEERING UNIV., PROFESSOR, 工学部, 教授 (00247298)
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| Project Period (FY) |
1996 – 1997
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| Keywords | RARE EARTH IONS / LUMINESCENCE / INFRARED UPCONVERSION / ENERGY TRANSFER / ENERGY MIGRATION / INFRARED LASER |
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| Research Abstract |
Energy transfer and migration processes between rare earth ions have been investigated in Yb^<3+> and Tm^<3+> ion-doped luminescent materials for investigating optimization procedures in designing various laser materials including infrared upconversion laser materials. Various fluoride lattices were chosen as the host materials and fluoride glass was also investigated for the purpose of comparison. It has been shown that energy transfer coefficients from Yb^<3+> to Tm^<3+> ions differ nearly one order of magnitude even in the lattices previously considered having similar luminescence characteristics. It has been also shown that the energy transfer coefficients depend upon donor concentration, particularly at lower donor concentrations. These experimental results were compared with several analytical model as well as simulation results. It has been demonstrated that these behaviors are systematically explained with the results of computer simulation carried out on random walk model. The present results seem to be useful in carrying out optimization design of various rare earth ion-doped materials. Several relating experimental results performed during the period, namely, fabrication of cascade infrared laser, exploration of new solid state light sources and photoluminescence characterization of MBE-grown ZnSe : Ge crystal layrs, are included in the report.
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